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91.发明授权公开(公告)号：US10529589B2
公开(公告)日：2020-01-07
申请号：US15995173
申请日：2018-06-01
发明人： Erdinc Karakas , Li Wang , Andrew Nolan , Christopher Talone , Shyam Sridhar , Alok Ranjan , Hiroto Ohtake
IPC分类号： H01L21/3213 , H01L21/311 , H01L21/3065 , H01L21/033 , H01L21/027
摘要： A method of etching is described. The method providing a substrate having a first material composed of silicon-containing organic material and a second material that is different from the first material, forming a chemical mixture by plasma-excitation of a process gas containing SF6 and an optional inert gas, controlling a processing pressure at or above 100 mtorr, and exposing the first material on the substrate to the chemical mixture to selectively etch the first material relative to the second material.
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公开(公告)号：US20200006081A1
公开(公告)日：2020-01-02
申请号：US16406644
申请日：2019-05-08
发明人： Sonam D. Sherpa , Alok Ranjan
IPC分类号： H01L21/311 , C09K13/00
摘要： An isotropic plasma etch process for etching silicon oxide is provided. In an embodiment, a first step, a modification step, includes the use of a fluorocarbon based plasma. This modification step provides for the formation of an interface layer and the deposition of a fluorocarbon film on the surface of the silicon oxide. Then, a second step, a removal step includes the use of an oxygen (O2) based plasma. This removal step removes the fluorocarbon film and the interface layer. To promote isotropic etching, the plasma process is performed with little or no low frequency bias power applied to the system. Thus, ion attraction to the substrate is minimized by providing no low frequency power. Further, relatively high pressures are maintained so as to further promote isotropic behavior.
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公开(公告)号：US20190318916A1
公开(公告)日：2019-10-17
申请号：US16377522
申请日：2019-04-08
发明人： Yusuke Yoshida , Sergey Voronin , Alok Ranjan , David J. Coumou , Scott E. White
IPC分类号： H01J37/32
摘要： Plasma ion energy distribution for ions having different masses is controlled by controlling the relationship between a base RF frequency and a harmonic RF frequency. By the controlling the RF power frequencies, characteristics of the plasma process may be changed based on ion mass. The ions that dominate etching may be selectively based upon whether an ion is lighter or heavier than other ions. Similarly, atomic layer etch processes may be controlled such that the process may be switched between a layer modification step and a layer etch step though adjustment of the RF frequencies. Such switching is capable of being performed within the same gas phase of the plasma process. The control of the RF power includes controlling the phase difference and/or amplitude ratios between a base RF frequency and a harmonic frequency based upon the detection of one or more electrical characteristics within the plasma apparatus.
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公开(公告)号：US20190318913A1
公开(公告)日：2019-10-17
申请号：US16377501
申请日：2019-04-08
发明人： Yusuke Yoshida , Sergey Voronin , Alok Ranjan , David J. Coumou , Scott E. White
摘要： Multiple harmonic frequency components are used for plasma excitation in a plasma process. Relative amplitude and/or phase shift between the different frequency components is controlled so as to provide desired ion energy plasma properties. The relative amplitude and/or phase shift may be controlled without direct and/or manual ion energy measurements. Rather, the ion energy within the plasma may be dynamically controlled by monitoring one or more electrical characteristics within the plasma apparatus, such as for example, impedance levels, electrical signals in the radio frequency (RF) generator, electrical signals in a the matching networks, and electrical signals in other circuits of the plasma processing apparatus. The monitoring and control of the ion energy may be accomplished dynamically during the plasma process so as to maintain a desired ion energy distribution.
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公开(公告)号：US10446407B2
公开(公告)日：2019-10-15
申请号：US15874703
申请日：2018-01-18
发明人： Sonam D. Sherpa , Alok Ranjan
IPC分类号： H01L21/311 , H01L21/67 , H01J37/32
摘要： Embodiments of the invention describe substrate processing methods using non-polymerizing chemistry to preferentially etch silicon nitride relative to other materials found in semiconductor manufacturing. According to one embodiment, a processing method includes providing in a plasma processing chamber a substrate containing a first material containing silicon nitride and a second material that is different from the first material, forming a plasma-excited process gas containing SF6, and exposing the substrate to the plasma-excited process gas to preferentially etch the first material relative to the second material. In one example, the process gas can contain or consist of SF6 and Ar. In another example, the second material is selected from the group consisting of Si and SiO2.
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公开(公告)号：US10290506B2
公开(公告)日：2019-05-14
申请号：US15431049
申请日：2017-02-13
发明人： Alok Ranjan , Akiteru Ko
IPC分类号： H01L21/3065 , H01L21/311 , H01L21/28 , H01L29/51 , H01L21/67 , H01L21/683 , H01J37/32
摘要： A method of patterning a gate stack on a substrate is described. The method includes preparing a gate stack on a substrate, wherein the gate stack includes a high-k layer and a gate layer formed on the high-k layer. The method further includes transferring a pattern formed in the gate layer to the high-k layer using a pulsed bias plasma etching process, and selecting a process condition for the pulsed bias plasma etching process to achieve a silicon recess formed in the substrate having a depth less than 2 nanometer (nm).
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公开(公告)号：US20190096694A1
公开(公告)日：2019-03-28
申请号：US16200122
申请日：2018-11-26
发明人： Mingmei Wang , Alok Ranjan , Peter L.G. Ventzek
IPC分类号： H01L21/3213 , H01L21/311 , H01J37/32 , H01L21/3065
摘要： A plasma processing system and methods for high precision etching of microelectronic substrates. The system may include a combination of microwave and radio frequency (RF) power sources that may generate plasma conditions to remove monolayer(s). The system may generation a first plasma to form a thin adsorption layer on the surface of the microelectronic substrate. The adsorbed layer may be removed when the system transition to a second plasma. The differences between the first and second plasma may be include the ion energy proximate to the substrate. For example, the first plasma may have an ion energy of less than 20 eV and the second plasma may have an ion energy greater than 20 eV.
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公开(公告)号：US20180294168A1
公开(公告)日：2018-10-11
申请号：US15949745
申请日：2018-04-10
IPC分类号： H01L21/3213
摘要： Methods for anisotropic dry etching of titanium-containing films used in semiconductor manufacturing have been disclosed in various embodiments. According to one embodiment, the method includes providing a substrate having a titanium-containing film thereon, and etching the titanium-containing film by a) exposing the substrate to a chlorine-containing gas to form a chlorinated layer on the substrate, b) exposing the substrate to a plasma-excited inert gas to remove the chlorinated layer, and c) repeating the exposing steps at least once.
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99.发明申请公开(公告)号：US20180277386A1
公开(公告)日：2018-09-27
申请号：US15904157
申请日：2018-02-23
发明人： Sonam D. Sherpa , Alok Ranjan
IPC分类号： H01L21/311 , H01L21/033
CPC分类号： H01L21/3065 , H01L21/0337 , H01L21/0338 , H01L21/3086 , H01L21/311 , H01L21/31116 , H01L21/31144 , H01L21/3213 , H01L21/32137
摘要： A method of preparing a self-aligned block (SAB) structure is described. The method includes providing a substrate having raised features defined by a first material containing silicon nitride and a second material containing silicon oxide formed on side walls of the first material, and a third material containing an organic material covering some of the raised features and exposing some raised features according to a block pattern formed in the third material. The method further includes forming a first chemical mixture by plasma-excitation of a first process gas containing H and optionally a noble gas, and exposing the first material on the substrate to the first chemical mixture. Thereafter, the method includes forming a second chemical mixture by plasma-excitation of a second process gas containing N, F, O, and optionally a noble element, and exposing the first material on the substrate to the second plasma-excited process gas to selectively etch the first material relative to the second and third material.
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公开(公告)号：US20180025916A1
公开(公告)日：2018-01-25
申请号：US15658149
申请日：2017-07-24
发明人： Alok Ranjan , Peter Ventzek
IPC分类号： H01L21/311
摘要： A method of etching is described. The method includes treating at least a portion of a surface exposed on a substrate with an adsorption-promoting agent to alter a functionality of the exposed surface and cause subsequent adsorption of a carbon-containing precursor, and thereafter, adsorbing the organic precursor to the functionalized surface to form a carbon-containing film. Then, at least a portion of the surface of the carbon-containing film is exposed to an ion flux to remove the adsorbed carbon-containing film and at least a portion of the material of the underlying substrate.
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