公开(公告)号：US07050118B2

公开(公告)日：2006-05-23

申请号：US09964578

申请日：2001-09-28

申请人： Shigeyuki Okada ,  Kouichi Yamada ,  Mamoru Mukuno

发明人： Shigeyuki Okada ,  Kouichi Yamada ,  Mamoru Mukuno

IPC分类号： H04N5/50

CPC分类号： H04N21/4383 ,  H04N5/4401 ,  H04N21/4263 ,  H04N21/433 ,  H04N21/4382 ,  H04N21/44016 ,  H04N21/44209 ,  H04N21/4435

摘要： The digital broadcast receiving apparatus according to the present invention includes a tuning unit for outputting normal image data for performing a normal reproduction operation corresponding to a user selected channel, a memory unit for outputting background image data for performing a background reproduction operation when the normal reproduction operation cannot be performed, a data selector for receiving the normal image data and the background image data and outputting one of the normal image data and the background image data, and an MPEG video decode unit for decoding image data output by the data selector to generate an image signal. The tuning unit successively receives the respective channel selected in the background independently of the user selection, and stores the background image data corresponding to the respective channels in the memory unit.

公开(公告)号：US20050058003A1

公开(公告)日：2005-03-17

申请号：US10937335

申请日：2004-09-10

申请人： Kouichi Yamada

发明人： Kouichi Yamada

IPC分类号： G11C8/00 ,  G11C8/16 ,  G11C11/412

CPC分类号： G11C8/16 ,  G11C11/412

摘要： A semiconductor memory device capable of improving the operating speed while suppressing size increase is provided. This semiconductor device comprises a plurality of word lines and a plurality of bit lines arranged to intersect with each other, a single-port SRAM cell, connected to the bit lines and the word lines, having a single port for inputting/outputting data, a first row decoder and a second row decoder connected to the word lines for selecting a row address and a first column decoder and a second column decoder connected to the bit lines for selecting a column address, while each word line is divided into a plurality of local word lines.

摘要翻译： 提供了能够在抑制大小增加的同时提高运转速度的半导体存储装置。 该半导体器件包括多个字线和多个位线，彼此相交，连接到位线和字线的单端口SRAM单元具有用于输入/输出数据的单个端口， 第一行解码器和连接到用于选择行地址的字线的第二行解码器和连接到用于选择列地址的位线的第一列解码器和第二列解码器，而每个字线被分成多个局部 字线。

公开(公告)号：US6097059A

公开(公告)日：2000-08-01

申请号：US997515

申请日：1997-12-23

申请人： Kouichi Yamada

发明人： Kouichi Yamada

IPC分类号： G11C11/56 ,  G11C16/04 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/423 ,  H01L29/788

CPC分类号： H01L27/11521 ,  G11C11/5621 ,  G11C11/5628 ,  G11C16/0458 ,  G11C16/0475 ,  G11C16/0491 ,  H01L27/115 ,  H01L29/42324 ,  H01L29/7887 ,  G11C2211/5612

摘要： A memory cell including source-drain regions, a channel region, floating gate electrodes, and a control gate electrode. The floating gate electrodes are placed next to each other over the channel region on a gate insulating layer. The control gate electrode is located over the floating gate electrodes on an insulating layer and an insulating layer, both layers being formed by a LOCOS method. Protuberances are formed on the upper corners of the floating gate electrodes by the insulating layer. A central portion of the control gate electrode is laid over the channel region on insulating layers, to form a selecting gate. A selecting transistor comprises this selecting gate between both the source-drain regions.

摘要翻译： 存储单元包括源 - 漏区，沟道区，浮置栅电极和控制栅电极。 浮栅电极在栅极绝缘层上的沟道区上彼此相邻放置。 控制栅电极位于绝缘层和绝缘层上的浮栅上，两层均通过LOCOS法形成。 通过绝缘层在浮栅电极的上角形成突起。 控制栅电极的中心部分覆盖在绝缘层上的沟道区上，形成选择栅极。 选择晶体管包括在这两个源极 - 漏极区域之间的该选择栅极。

公开(公告)号：US5986939A

公开(公告)日：1999-11-16

申请号：US219861

申请日：1998-12-23

申请人： Kouichi Yamada

发明人： Kouichi Yamada

IPC分类号： G11C11/56 ,  G11C16/04 ,  G11C16/34 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/105 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

CPC分类号： G11C16/34 ,  G11C11/5621 ,  G11C16/0483 ,  H01L29/7887 ,  G11C16/24 ,  G11C7/18

摘要： There is disclosed a non-volatile semiconductor memory in which writing and erasing are easily controlled. When electrons are supplied to a floating gate while a memory cell is in a writing condition, a channel is off. Therefore, there is little capacitive coupling between a control gate, a source and a drain. Even when the electric potential of a word line is raised to vary the electric potential of the source and the drain, the electric potential of the control gate hardly varies. Moreover, when electrons are extracted from the floating gate while the memory cell is in an erasing condition, the channel is on. Therefore, a capacitive coupling is generated between the control gate and the source and the drain. When the electric potential of the word line is raised to vary the electric potential of the source and the drain, the electric potential of the control gate varies accordingly. Since the data value is determined by the variation in the electric potential of the control gate, a complicated control heretofore necessary for preventing excess erasing is unnecessary.

摘要翻译： 公开了一种易于控制写入和擦除的非易失性半导体存储器。 当存储单元处于写入状态时，当电子被提供给浮动栅极时，通道关闭。 因此，控制栅极，源极和漏极之间几乎没有电容耦合。 即使当字线的电位升高以改变源极和漏极的电位时，控制栅极的电位也几乎不变。 此外，当存储单元处于擦除状态时，当从浮置栅极提取电子时，通道导通。 因此，在控制栅极与源极和漏极之间产生电容耦合。 当字线的电位升高以改变源极和漏极的电位时，控制栅的电位相应地变化。 由于数据值由控制栅极的电位的变化决定，所以不需要为防止多余的擦除而需要的复杂的控制。

公开(公告)号：US5431954A

公开(公告)日：1995-07-11

申请号：US293052

申请日：1994-08-19

申请人： Shinji Inazawa ,  Kouichi Yamada

发明人： Shinji Inazawa ,  Kouichi Yamada

IPC分类号： C08K5/55 ,  C08G77/60 ,  C08G79/08 ,  C08L83/04 ,  C08L83/16 ,  C09D183/00 ,  C09D183/16 ,  H01B3/46 ,  H01B7/02 ,  H01B7/29 ,  H01B13/16 ,  B05D5/12

CPC分类号： H01B3/46 ,  C08G77/60 ,  C08G79/08 ,  C09D183/16 ,  Y10T428/2933 ,  Y10T428/296 ,  Y10T428/2962 ,  Y10T428/2973

摘要： Disclosed herein are a heat resistant insulated wire which is not decomposed but maintains insulativity under a high temperature with excellent adhesion of a coating film, and a method of preparing the same. The heat resistant insulated wire includes a base material consisting of an electrical conductor, and an insulating layer provided on its surface. The insulating layer is obtained by heating a second polymer, in which main chains expressed in a chemical formula --[Si(R.sub.1).sub.2 --N(R.sub.2)].sub.n -- are cross-linked with each other by chloroborazine through side chains containing trialkylsilyl radicals at a temperature of at least about 300.degree. C. and not more than 500.degree. C.

摘要翻译： 本发明公开了一种耐热绝缘电线及其制备方法，其不分解，但在高温下具有优异的涂膜密合性而具有绝缘性。 耐热绝缘线包括由电导体构成的基体材料和在其表面上设置的绝缘层。 通过加热第二聚合物获得绝缘层，其中以化学式 - [Si（R 1）2 -N（R 2）] n-表示的主链通过氯硼嗪通过含有三烷基甲硅烷基的侧链彼此交联 在至少约300℃至不超过500℃的温度下进行。

公开(公告)号：US5372886A

公开(公告)日：1994-12-13

申请号：US23077

申请日：1993-02-26

申请人： Shinji Inazawa ,  Kouichi Yamada ,  Kazuo Sawada

发明人： Shinji Inazawa ,  Kouichi Yamada ,  Kazuo Sawada

IPC分类号： H01B3/10 ,  H01B7/29 ,  H01B13/06 ,  B32B9/00 ,  B32B18/00 ,  H01B7/00

CPC分类号： H01B7/292 ,  H01B13/065 ,  H01B3/105 ,  Y10T428/294 ,  Y10T428/2942 ,  Y10T428/2944 ,  Y10T428/2949 ,  Y10T428/2958 ,  Y10T428/2978

摘要： An insulated wire is suitable for use as a distribution wire, a wire for winding a coil or the like, which is used in a high-vacuum environment or in a high-temperature environment such as a high vacuum apparatus or a high temperature service apparatus. The insulated wire has a base material (1) forming a substrate, a chromium oxide CrO.sub.3-x containing intermediate layer (2) on the substrate, and an oxide insulating layer (3) on the intermediate layer. The base material (1) is an electrical conductor. The chromium oxide containing layer (2) is so formed that the ratio of oxygen to chromium O/Cr is not less than 0.5 but less than 1.5 to avoid the formation of chromic oxide Cr.sub.2 O.sub.3 which reduces the adhesive bonding strength. The oxide insulating layer (3) is formed by applying a precursor solution of a metallic oxide onto the chromium oxide containing layer (2) by a sol-gel method or an organic acid salt pyrolytic method. This insulated wire exhibits a high heat resistance and insulation ability as well as excellent flexibility, and does not provide any gas adsorption source when the wire is used in a vacuum device.

摘要翻译： 绝缘线适用于高真空环境或高温环境例如高真空设备或高温维修设备中使用的配线，用于卷绕线圈等的线 。 绝缘线具有形成基板的基材（1），在基板上含有CrO 3-x的中间层（2），中间层上具有氧化物绝缘层（3）。 基材（1）是电导体。 含氧化铬含有层（2）的形成使得氧与铬O / Cr的比例不小于0.5但小于1.5，以避免氧化铬Cr2O3的形成，这降低了粘合强度。 氧化物绝缘层（3）通过溶胶 - 凝胶法或有机酸盐热解法将金属氧化物的前体溶液涂覆到含氧化铬的层（2）上而形成。 该绝缘线具有高的耐热性和绝缘性以及优异的柔韧性，并且当线用于真空装置时不提供任何气体吸附源。

公开(公告)号：US5368935A

公开(公告)日：1994-11-29

申请号：US195611

申请日：1994-02-14

申请人： Shinji Inazawa ,  Kouichi Yamada

发明人： Shinji Inazawa ,  Kouichi Yamada

IPC分类号： C08K5/55 ,  C08G77/60 ,  C08G79/08 ,  C08L83/04 ,  C08L83/16 ,  C09D183/00 ,  C09D183/16 ,  H01B3/46 ,  H01B7/02 ,  H01B7/29 ,  H01B13/16 ,  D02G3/00

CPC分类号： H01B3/46 ,  C08G77/60 ,  C08G79/08 ,  C09D183/16 ,  Y10T428/2933 ,  Y10T428/296 ,  Y10T428/2962 ,  Y10T428/2973

摘要： Disclosed herein are a heat resistant insulated wire which is not decomposed but maintains insulativity under a high temperature with excellent adhesion of a coating film, and a method of preparing the same. The heat resistant insulated wire includes a base material consisting of an electrical conductor, and an insulating layer provided on its surface. The insulating layer is obtained by heating a second polymer, in which main chains expressed in a chemical formula--[Si(R.sub.1).sub.2 --N(R.sub.2)].sub.n --are cross-linked with each other by chloroborazine through side chains containing trialkylsilyl radicals at a temperature of at least about 300.degree. C. and not more than 500.degree. C.

摘要翻译： 本发明公开了一种耐热绝缘电线及其制备方法，其不分解，但在高温下具有优异的涂膜密合性而具有绝缘性。 耐热绝缘线包括由电导体构成的基体材料和在其表面上设置的绝缘层。 通过加热第二聚合物获得绝缘层，其中以化学式表示的主链 - [Si（R 1）2 -N（R 2）] n - 通过氯硼嗪通过含有三烷基甲硅烷基的侧链彼此交联 在至少约300℃至不超过500℃的温度下进行。

公开(公告)号：US5296260A

公开(公告)日：1994-03-22

申请号：US743429

申请日：1991-08-22

申请人： Kazuo Sawada ,  Shinji Inazawa ,  Kouichi Yamada

发明人： Kazuo Sawada ,  Shinji Inazawa ,  Kouichi Yamada

IPC分类号： C04B41/45 ,  C23C18/12 ,  H01B3/10 ,  H01B7/29 ,  H01B13/06 ,  B05N5/12

CPC分类号： H01B13/065 ,  C04B41/4554 ,  C23C18/1204 ,  C23C18/1225 ,  H01B3/105 ,  H01B7/292

摘要： A solution of a ceramics precursor prepared from at last one or two types of metal alkoxides or metal acylates is applied onto a ceramics film having irregularity on its surface, which is formed on a conductor surface, to fill up irregular portions of the surface. This ceramics precursor solution is at least partially changed to a ceramics state by heating. The surface is smoothed by such application of the ceramics precursor solution, and general disadvantages of weakness against rubbing and inferiority in workability can be improved. Further, it is possible to improve an outgassing property.

摘要翻译： PCT No.PCT / JP90 / 01701 Sec。 371日期1991年8月22日 102（e）1991年8月22日PCT 1990年12月26日PCT PCT。 公开号WO91 / 10239 日期：1991年7月11日。将由最后一种或两种类型的金属醇盐或金属酰化物制备的陶瓷前体溶液施加到形成在导体表面上的表面上具有不规则性的陶瓷膜上，以填满 表面的不规则部分。 该陶瓷前体溶液通过加热至少部分地变为陶瓷状态。 通过这样的陶瓷前体溶液的涂布使表面变平滑，可以提高摩擦力弱，作业性劣化的一般缺点。 此外，可以提高除气性。

公开(公告)号：US5091609A

公开(公告)日：1992-02-25

申请号：US598629

申请日：1990-10-12

申请人： Kazuo Sawada ,  Shinji Inazawa ,  Kouichi Yamada

发明人： Kazuo Sawada ,  Shinji Inazawa ,  Kouichi Yamada

IPC分类号： C23C18/12 ,  C25D11/18 ,  H01B3/10 ,  H01B7/29

CPC分类号： H01B7/292 ,  C23C18/1216 ,  C23C18/1254 ,  C23C18/1262 ,  C25D11/18 ,  H01B3/105 ,  Y10T428/2949

摘要： An insulated electrical wire is suitable for use as a distribution wire, a wire for winding coils, and for other electrical purposes. The wire can be used in a high-vacuum environment or in a high-temperature environment. This insulated electrical wire has a conductor core made of a base material (1), an anodic oxide layer (2), and an oxide insulating layer (3). The base material (1) forms a conductor core and has a surface cover of either an aluminum layer or an aluminum alloy layer at least on its outer surface. The anodic oxide layer (2) is formed on the surface layer. The oxide insulating layer (3) is formed on the anodic oxide layer by a sol-gel method or an organic acid salt pyrolytic method. This insulated electrical wire has a good heat resistance and a good insulating strength as well as excellent flexibility, and does not provide any gas adsorption source.

摘要翻译： PCT No.PCT / JP90 / 00177 Sec。 371 1990年10月12日第 102（e）日期1990年10月12日PCT 1990年2月13日提交PCT公布。 出版物WO90 / 09670 日期1990年8月23日。绝缘电线适用于配线，绕线线和其他电气用途。 电线可用于高真空环境或高温环境中。 该绝缘电线具有由基材（1），阳极氧化层（2）和氧化物绝缘层（3）构成的导体芯。 基材（1）形成导体芯，并且至少在其外表面上具有铝层或铝合金层的表面覆盖层。 阳极氧化层（2）形成在表面层上。 氧化物绝缘层（3）通过溶胶 - 凝胶法或有机酸盐热解法形成在阳极氧化层上。 这种绝缘电线具有良好的耐热性和良好的绝缘强度以及优异的柔韧性，并且不提供任何气体吸附源。

公开(公告)号：US4784982A

公开(公告)日：1988-11-15

申请号：US160706

申请日：1988-02-26

申请人： Kouichi Usui ,  Masahide Ogawa ,  Osamu Okumura ,  Teiji Sato ,  Kouichi Yamada ,  Masanori Tanaka ,  Noriyuki Takahashi

发明人： Kouichi Usui ,  Masahide Ogawa ,  Osamu Okumura ,  Teiji Sato ,  Kouichi Yamada ,  Masanori Tanaka ,  Noriyuki Takahashi

IPC分类号： C01B33/20 ,  B01J20/10 ,  B01J20/16 ,  B01J20/32 ,  C01B33/26 ,  B01J20/04 ,  B01J20/08

CPC分类号： C01B33/26 ,  B01J20/16 ,  B01J20/3204 ,  B01J20/3236

摘要： Disclosed is a composite body comprising amorphous and porous silica or silica-alumina and a layer of an aluminum-containing phylosilicate formed on surfaces of primary particles of the silica or silica-alumina. This composite phylosilicate is obtained by reacting a water-soluble silicate, a water-soluble zinc salt or magnesium salt and a water-soluble aluminum salt or aluminate in an aqueous medium containing a sol or gel of silica or silica-alumina. This composite phylosilicate has a large specific surface area and a large pore volume and has both the properties of a solid acid and the properties of a solid base.

摘要翻译： 公开了一种复合体，其包含无定形和多孔二氧化硅或二氧化硅 - 氧化铝和在二氧化硅或二氧化硅 - 氧化铝的一次颗粒表面上形成的含铝硅酸盐硅酸盐层。 该复合硅酸硅酸盐通过使水溶性硅酸盐，水溶性锌盐或镁盐与水溶性铝盐或铝酸盐在含有二氧化硅或二氧化硅 - 氧化铝的溶胶或凝胶的水性介质中反应而获得。 该复合硅酸硅酸盐具有大的比表面积和较大的孔体积，并具有固体酸的性质和固体碱的性质。