公开(公告)号：US07058103B2

公开(公告)日：2006-06-06

申请号：US10647107

申请日：2003-08-25

申请人： Masaya Ishida ,  Tatsuya Morioka ,  Daisuke Hanaoka ,  Mototaka Taneya ,  Shigeo Fujita ,  Yoichi Kawakami ,  Masafumi Harada ,  Takatomo Sasaki ,  Yusuke Mori

发明人： Masaya Ishida ,  Tatsuya Morioka ,  Daisuke Hanaoka ,  Mototaka Taneya ,  Shigeo Fujita ,  Yoichi Kawakami ,  Masafumi Harada ,  Takatomo Sasaki ,  Yusuke Mori

IPC分类号： H01S3/08

CPC分类号： B82Y20/00 ,  C09K11/0883 ,  C09K11/62 ,  H01L33/502 ,  H01S5/005 ,  H01S5/02284 ,  H01S5/02296 ,  H01S5/34333 ,  Y10S977/783 ,  Y10S977/815 ,  Y10S977/816

摘要： A light-emitting apparatus composed of a light source that emits primary light and a phosphor that absorbs the primary light and emits secondary light offers high brightness, low power consumption, and a long lifetime while minimizing adverse effects on the environment. The phosphor is formed of a III–V group semiconductor in the form of fine-particle crystals each having a volume of 2 800 nm3 or less. The light emitted from the fine-particle crystals depends on their volume, and therefore giving the fine-particle crystals a predetermined volume distribution makes it possible to adjust the wavelength range of the secondary light.

公开(公告)号：US20050153471A1

公开(公告)日：2005-07-14

申请号：US10999338

申请日：2004-11-29

申请人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Ryu Hirota

发明人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Ryu Hirota

IPC分类号： C30B29/38 ,  C30B11/00 ,  C30B11/12 ,  C30B19/02 ,  C30B29/40 ,  H01L21/208 ,  H01L21/00

CPC分类号： C30B29/403 ,  C30B11/00 ,  C30B11/04 ,  C30B29/406

摘要： There is provided a method of manufacturing a group-III nitride crystal in which a nitrogen plasma is brought into contact with a melt containing a group-III element and an alkali metal to grow the group-III nitride crystal. Furthermore, there is also provided a method of manufacturing a group-III nitride crystal in which the group-III nitride crystal is grown on a substrate placed in a melt containing a group-III element and an alkali metal, with a minimal distance between a surface of the melt and a surface of the substrate set to be at most 50 mm.

摘要翻译： 提供了一种制造III族氮化物晶体的方法，其中使氮等离子体与含有III族元素和碱金属的熔体接触以生长III族氮化物晶体。 此外，还提供了一种III族氮化物晶体的制造方法，其中III族氮化物晶体在放置在含有III族元素和碱金属的熔体中的基板上生长，其中 熔体的表面和基板的表面设定为至多50mm。

公开(公告)号：US06551528B1

公开(公告)日：2003-04-22

申请号：US09647137

申请日：2000-11-14

申请人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura

发明人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura

IPC分类号： G02B520

CPC分类号： G02F1/3551 ,  G02F1/37 ,  H01S3/109 ,  H01S3/1095 ,  H01S3/1611

摘要： As a wavelength conversion crystal whose double refraction index is controllable, a crystal represented by a formula (I), M1xM21−xCa4O(BL3)3, where each of M1 and M2 represents one or more types of different rare earth elements and 0

摘要翻译： 作为双重折射率可控的波长转换晶体，由式（I）表示的晶体M1xM21-xCa4O（BL3）3，其中M1和M2各自表示一种或多种不同的稀土元素，0

公开(公告)号：US08507364B2

公开(公告)日：2013-08-13

申请号：US12453743

申请日：2009-05-20

申请人： Seiji Nagai ,  Shiro Yamazaki ,  Yasuhide Yakushi ,  Takayuki Sato ,  Makoto Iwai ,  Katsuhiro Imai ,  Yusuke Mori ,  Yasuo Kitaoka

发明人： Seiji Nagai ,  Shiro Yamazaki ,  Yasuhide Yakushi ,  Takayuki Sato ,  Makoto Iwai ,  Katsuhiro Imai ,  Yusuke Mori ,  Yasuo Kitaoka

IPC分类号： H01L21/20

CPC分类号： C30B9/12 ,  C30B9/10 ,  C30B29/403

摘要： An object of the present invention is to realize, by the flux process, the production of a high-quality n-type semiconductor crystal having high concentration of electrons. The method of the invention for producing an n-type Group III nitride-based compound semiconductor by the flux process, the method including preparing a melt by melting at least a Group III element by use of a flux; supplying a nitrogen-containing gas to the melt; and growing an n-type Group III nitride-based compound semiconductor crystal on a seed crystal from the melt. In the method, carbon and germanium are dissolved in the melt, and germanium is incorporated as a donor into the semiconductor crystal, to thereby produce an n-type semiconductor crystal.The mole percentage of germanium to gallium in the melt is 0.05 mol % to 0.5 mol %, and the mole percentage of carbon to sodium is 0.1 mol % to 3.0 mol %.

公开(公告)号：US08568532B2

公开(公告)日：2013-10-29

申请号：US13315871

申请日：2011-12-09

申请人： Makoto Iwai ,  Shuhei Higashihara ,  Yusuke Mori ,  Yasuo Kitaoka ,  Naoya Miyoshi

发明人： Makoto Iwai ,  Shuhei Higashihara ,  Yusuke Mori ,  Yasuo Kitaoka ,  Naoya Miyoshi

IPC分类号： C30B19/06

CPC分类号： C30B29/403 ,  C30B9/10 ,  C30B35/002

摘要： Materials of a nitride single crystal of a metal belonging to III group and a flux are contained in a crucible, which is contained in a reaction container, the reaction container is contained in an outer container, the outer container is contained in a pressure container, and nitrogen-containing atmosphere is supplied into the outer container and melt is generated in the crucible to grow a nitride single crystal of a metal belonging to III group. The reaction container includes a main body containing the crucible and a lid. The main body includes a side wall having a fitting face and a groove opening at the fitting face and a bottom wall. The lid has an upper plate part including a contact face for the fitting face of the main body and a flange part extending from the upper plate part and surrounding an outer side of said side wall.

摘要翻译： 属于III族的金属的氮化物单晶和助熔剂的材料包含在容纳在反应容器中的坩埚中，反应容器容纳在外容器中，外容器容纳在压力容器中， 向外容器供给含氮气氛，在坩埚中产生熔融物，生长属于III族的金属的氮化物单晶。 反应容器包括容纳坩埚和盖的主体。 主体包括具有配合面的侧壁和在配合面处的槽开口和底壁。 盖具有上板部，其包括用于主体的嵌合面的接触面和从上板部延伸并围绕所述侧壁的外侧的凸缘部。

公开(公告)号：US08501141B2

公开(公告)日：2013-08-06

申请号：US12662006

申请日：2010-03-26

申请人： Takayuki Sato ,  Seiji Nagai ,  Makoto Iwai ,  Shuhei Higashihara ,  Yusuke Mori ,  Yasuo Kitaoka

发明人： Takayuki Sato ,  Seiji Nagai ,  Makoto Iwai ,  Shuhei Higashihara ,  Yusuke Mori ,  Yasuo Kitaoka

IPC分类号： C01B21/06 ,  C30B15/00 ,  C30B9/00 ,  C30B19/00 ,  C30B11/00 ,  C30B25/00 ,  C30B28/14 ,  H01L21/00 ,  H01L33/00 ,  H01L21/02 ,  H01B1/02 ,  H01B1/04

CPC分类号： C30B9/12 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02625

摘要： An object of the present invention is to effectively add Ge in the production of GaN through the Na flux method. In a crucible, a seed crystal substrate is placed such that one end of the substrate remains on the support base, whereby the seed crystal substrate remains tilted with respect to the bottom surface of the crucible, and gallium solid and germanium solid are placed in the space between the seed crystal substrate and the bottom surface of the crucible. Then, sodium solid is placed on the seed crystal substrate. Through employment of this arrangement, when a GaN crystal is grown on the seed crystal substrate through the Na flux method, germanium is dissolved in molten gallium before formation of a sodium-germanium alloy. Thus, the GaN crystal can be effectively doped with Ge.

摘要翻译： 本发明的目的是通过Na通量法有效地添加Ge生产GaN。 在坩埚中，放置晶种衬底，使得衬底的一端保留在支撑基底上，由此籽晶衬底相对于坩埚的底表面保持倾斜，并且将镓固体和锗固体放置在 晶种基板与坩埚底面之间的空间。 然后，将钠固体置于晶种衬底上。 通过使用这种布置，当GaN晶体通过Na通量法在籽晶衬底上生长时，锗在形成钠 - 锗合金之前溶解在熔融镓中。 因此，GaN晶体可以有效地掺杂Ge。

公开(公告)号：US20120137961A1

公开(公告)日：2012-06-07

申请号：US13315871

申请日：2011-12-09

申请人： Makoto Iwai ,  Shuhei Higashihara ,  Yusuke Mori ,  Yasuo Kitaoka ,  Naoya Miyoshi

发明人： Makoto Iwai ,  Shuhei Higashihara ,  Yusuke Mori ,  Yasuo Kitaoka ,  Naoya Miyoshi

IPC分类号： C30B11/06

CPC分类号： C30B29/403 ,  C30B9/10 ,  C30B35/002

摘要： Materials of a nitride single crystal of a metal belonging to III group and a flux are contained in a crucible, which is contained in a reaction container, the reaction container is contained in an outer container, the outer container is contained in a pressure container, and nitrogen-containing atmosphere is supplied into the outer container and melt is generated in the crucible to grow a nitride single crystal of a metal belonging to III group. The reaction container includes a main body containing the crucible and a lid. The main body includes a side wall having a fitting face and a groove opening at the fitting face and a bottom wall. The lid has an upper plate part including a contact face for the fitting face of the main body and a flange part extending from the upper plate part and surrounding an outer side of said side wall.

摘要翻译： 属于III族的金属的氮化物单晶和助熔剂的材料包含在容纳在反应容器中的坩埚中，反应容器容纳在外容器中，外容器容纳在压力容器中， 向外容器供给含氮气氛，在坩埚中产生熔融物，生长属于III族的金属的氮化物单晶。 反应容器包括容纳坩埚和盖的主体。 主体包括具有配合面的侧壁和在配合面处的槽开口和底壁。 盖具有上板部，其包括用于主体的嵌合面的接触面和从上板部延伸并围绕所述侧壁的外侧的凸缘部。

公开(公告)号：US20120003446A1

公开(公告)日：2012-01-05

申请号：US13164939

申请日：2011-06-21

申请人： Takashi SATOH ,  Seiji Sarayama ,  Hirokazu Iwata ,  Yusuke Mori ,  Yasuo Kitaoka

发明人： Takashi SATOH ,  Seiji Sarayama ,  Hirokazu Iwata ,  Yusuke Mori ,  Yasuo Kitaoka

IPC分类号： B32B7/02 ,  C30B19/00

CPC分类号： C30B19/02 ,  C30B9/10 ,  C30B19/08 ,  C30B19/10 ,  C30B29/403 ,  C30B29/406 ,  Y10T428/24942

摘要： A nitride crystal which encircles an outer periphery of a seed crystal, the nitride crystal in an embodiment includes: a first partial region, and a second partial region that has optical characteristics different from those of the first partial region and has optical characteristics which indicate the crystal orientation.

摘要翻译： 一种环绕晶种的外周的氮化物晶体，在一个实施方案中，氮化物晶体包括：第一部分区域和具有与第一部分区域的光学特性不同的光学特性的第二部分区域，并且具有指示 晶体取向。

公开(公告)号：US20110259261A1

公开(公告)日：2011-10-27

申请号：US13177057

申请日：2011-07-06

申请人： Makoto IWAI ,  Shuhei Higashihara ,  Yasuo Kitaoka ,  Yusuke Mori ,  Takayuki Sato ,  Seiji Nagai

发明人： Makoto IWAI ,  Shuhei Higashihara ,  Yasuo Kitaoka ,  Yusuke Mori ,  Takayuki Sato ,  Seiji Nagai

IPC分类号： C30B9/06 ,  C30B25/00

CPC分类号： C30B29/403 ,  C30B19/02 ,  C30B19/06 ,  C30B29/406 ,  C30B35/002

摘要： It is provided a method of growing a single crystal by flux process from a melt containing sodium, in that a flux is contained in a reaction vessel made of yttrium-aluminum garnet. Compared with the case that an alumina or yttria vessel is used, it can be successfully obtained a single crystal whose incorporation amounts of oxygen and silicon can be considerably reduced, residual carrier density can be lowered, and electron mobility and specific resistance can be improved.

摘要翻译： 本发明提供一种通过助熔剂从包含钠的熔体中生长单晶的方法，其特征在于，在由钇 - 铝石榴石制成的反应容器中含有助熔剂。 与使用氧化铝或氧化钇容器的情况相比，可以成功地获得能够显着降低氧和硅的掺入量的单晶，可以降低残留载流子密度，并且可以提高电子迁移率和电阻率。

公开(公告)号：US09096950B2

公开(公告)日：2015-08-04

申请号：US13164939

申请日：2011-06-21

申请人： Takashi Satoh ,  Seiji Sarayama ,  Hirokazu Iwata ,  Yusuke Mori ,  Yasuo Kitaoka

发明人： Takashi Satoh ,  Seiji Sarayama ,  Hirokazu Iwata ,  Yusuke Mori ,  Yasuo Kitaoka

IPC分类号： B32B7/02 ,  C30B29/40 ,  C30B9/10

CPC分类号： C30B19/02 ,  C30B9/10 ,  C30B19/08 ,  C30B19/10 ,  C30B29/403 ,  C30B29/406 ,  Y10T428/24942

摘要： A nitride crystal which encircles an outer periphery of a seed crystal, the nitride crystal in an embodiment includes: a first partial region, and a second partial region that has optical characteristics different from those of the first partial region and has optical characteristics which indicate the crystal orientation.

摘要翻译： 一种环绕晶种的外周的氮化物晶体，在一个实施方案中，氮化物晶体包括：第一部分区域和具有与第一部分区域的光学特性不同的光学特性的第二部分区域，并且具有指示 晶体取向。