公开(公告)号：US20180174851A1

公开(公告)日：2018-06-21

申请号：US15890465

申请日：2018-02-07

Applicant: THE TRUSTEES OF THE UNIVERSITY OF PENNSYLVANIA

Inventor： Robert W. Carpick ,  Frank Streller ,  Rahul Agarwal ,  Filippo Mangolini

IPC: H01L21/285 ,  C01B33/06 ,  H01L29/45 ,  B81C1/00 ,  B81B3/00 ,  H01L29/84

CPC classification number: H01L21/28518 ,  B81B3/0086 ,  B81B2201/01 ,  B81B2203/04 ,  B81C1/00698 ,  B81C2201/0181 ,  C01B33/06 ,  H01L29/456 ,  H01L29/84

Abstract: The disclosed subject matter provides thin films including a metal silicide and methods for forming such films. The disclosed subject matter can provide techniques for tailoring the electronic structure of metal thin films to produce desirable properties. In example embodiments, the metal silicide can comprise a platinum silicide, such as for example, PtSi, Pt2Si, or Pt3Si. For example, the disclosed subject matter provides methods which include identifying a desired phase of a metal silicide, providing a substrate, depositing at least two film layers on the substrate which include a first layer including amorphous silicon and a second layer including metal contacting the first layer, and annealing the two film layers to form a metal silicide. Methods can be at least one of a source-limited method and a kinetically-limited method. The film layers can be deposited on the substrate using techniques known in the art including, for example, sputter depositing.

公开(公告)号：US20180072568A1

公开(公告)日：2018-03-15

申请号：US15807715

申请日：2017-11-09

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Anthony K. Stamper ,  John G. Twombly

IPC: B81C1/00 ,  H01H59/00 ,  H01L41/113 ,  H01H57/00 ,  G06F17/50 ,  B81B3/00 ,  H01H1/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes patterning a wiring layer to form at least one fixed plate and forming a sacrificial material on the wiring layer. The method further includes forming an insulator layer of one or more films over the at least one fixed plate and exposed portions of an underlying substrate to prevent formation of a reaction product between the wiring layer and a sacrificial material. The method further includes forming at least one MEMS beam that is moveable over the at least one fixed plate. The method further includes venting or stripping of the sacrificial material to form at least a first cavity.

公开(公告)号：US20180072567A1

公开(公告)日：2018-03-15

申请号：US15802801

申请日：2017-11-03

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Christopher V. JAHNES ,  Anthony K. STAMPER

IPC: B81C1/00 ,  H01H59/00 ,  H01L41/113 ,  H01H57/00 ,  G06F17/50 ,  B81B3/00 ,  H01H1/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

公开(公告)号：US20180057357A1

公开(公告)日：2018-03-01

申请号：US15790515

申请日：2017-10-23

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Russell T. HERRIN ,  Jeffrey C. MALING ,  Anthony K. STAMPER

IPC: B81C1/00 ,  H01H59/00 ,  H01L41/113 ,  H01H57/00 ,  G06F17/50 ,  B81B3/00 ,  H01H1/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a beam structure and an electrode on an insulator layer, remote from the beam structure. The method further includes forming at least one sacrificial layer over the beam structure, and remote from the electrode. The method further includes forming a lid structure over the at least one sacrificial layer and the electrode. The method further includes providing simultaneously a vent hole through the lid structure to expose the sacrificial layer and to form a partial via over the electrode. The method further includes venting the sacrificial layer to form a cavity. The method further includes sealing the vent hole with material. The method further includes forming a final via in the lid structure to the electrode, through the partial via.

公开(公告)号：US09890039B2

公开(公告)日：2018-02-13

申请号：US15212896

申请日：2016-07-18

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Russell T. Herrin ,  Jeffrey C. Maling ,  Anthony K. Stamper

IPC: H05K3/00 ,  B81C1/00 ,  H01L41/113 ,  H01H57/00 ,  B81B3/00 ,  G06F17/50 ,  H01H1/00 ,  H01H59/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a beam structure and an electrode on an insulator layer, remote from the beam structure. The method further includes forming at least one sacrificial layer over the beam structure, and remote from the electrode. The method further includes forming a lid structure over the at least one sacrificial layer and the electrode. The method further includes providing simultaneously a vent hole through the lid structure to expose the sacrificial layer and to form a partial via over the electrode. The method further includes venting the sacrificial layer to form a cavity. The method further includes sealing the vent hole with material. The method further includes forming a final via in the lid structure to the electrode, through the partial via.

公开(公告)号：US20180009658A1

公开(公告)日：2018-01-11

申请号：US15698682

申请日：2017-09-08

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Christopher V. JAHNES ,  Anthony K. STAMPER

IPC: B81C1/00 ,  H01L41/113 ,  H01H1/00 ,  G06F17/50 ,  B81B3/00 ,  H01H59/00 ,  H01H57/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

公开(公告)号：US09828243B2

公开(公告)日：2017-11-28

申请号：US14963844

申请日：2015-12-09

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Christopher V. Jahnes ,  Anthony K. Stamper

IPC: H01P1/10 ,  B81B3/00 ,  B81C1/00 ,  H01L41/113 ,  H01H57/00 ,  G06F17/50 ,  H01H1/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

公开(公告)号：US20170247246A1

公开(公告)日：2017-08-31

申请号：US15506068

申请日：2015-06-23

Applicant: Robert Bosch GmbH

Inventor： Christoph Schelling ,  Benedikt Stein ,  Michael Stumber

IPC: B81B3/00

CPC classification number: B81B3/0086 ,  B81B2201/01 ,  B81B2201/0228 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0136 ,  B81C1/00801

Abstract: A layer material which is particularly suitable for the realization of self-supporting structural elements having an electrode in the layer structure of a MEMS component. The self-supporting structural element is at least partially made up of a silicon carbonitride (Si1-x-yCxNy)-based layer.

公开(公告)号：US20170134008A1

公开(公告)日：2017-05-11

申请号：US15212094

申请日：2016-07-15

Applicant: Wispry, Inc.

Inventor： Arthur S. Morris, III

IPC: H03J5/02 ,  H01L49/02 ,  H01L27/06 ,  H01L23/522 ,  B81B7/00 ,  B81C1/00

CPC classification number: H03J5/0209 ,  B81B7/008 ,  B81B2201/01 ,  B81B2207/053 ,  B81C1/00238 ,  B81C2203/0785 ,  H01L23/5223 ,  H01L27/0688 ,  H01L28/40 ,  H01L28/60 ,  H01L2924/0002 ,  H03J2200/10 ,  Y10T29/49105 ,  H01L2924/00

Abstract: The present subject matter relates to systems and methods for arranging and controlling programmable combinations of tuning elements in which more than one form of switching technology is combined in a single array. Specifically, such an array can include one or more first switchable elements including a first switching technology (e.g., one or more solid-state-controlled devices) and one or more second switchable elements including a second switching technology that is different than the first switching technology (e.g., one or more micro-electro-mechanical capacitors). The one or more first switchable elements and the one or more second switchable elements can be configured, however, to deliver a combined variable reactance.

公开(公告)号：US09643839B2

公开(公告)日：2017-05-09

申请号：US14827520

申请日：2015-08-17

Applicant: International Business Machines Corporation

Inventor： Urs T. Duerig ,  Armin W. Knoll ,  Elad Koren ,  Emanuel Loertscher

IPC: H01H51/22 ,  B81B7/00 ,  H01H1/00 ,  B81B3/00 ,  H01L41/09

CPC classification number: H01H59/0009 ,  B81B3/0021 ,  B81B7/008 ,  B81B2201/01 ,  B81B2203/04 ,  H01H1/0036 ,  H01H1/0094 ,  H01H55/00 ,  H01H57/00 ,  H01H61/01 ,  H01H2001/0052 ,  H01H2001/0078 ,  H01H2057/006 ,  H01H2061/006 ,  H01L41/0478 ,  H01L41/09

Abstract: An electromechanical switching device includes a first electrode, comprising layers of a first 2D layered material, which layers exhibit a first surface; a second electrode, comprising layers of a second 2D layered material, which layers exhibit a second surface opposite the first surface; and an actuation mechanism; wherein each of the first and second 2D layered materials has an anisotropic electrical conductivity, which is lower transversely to its layers than in-plane with the layers; the first electrode includes two distinct areas alongside the first surface, which areas differ in at least one structural, electrical and/or magnetic property; and at least one of the first and second electrodes is actuatable by the actuation mechanism, such that actuation thereof for modification of an electrical conductance transverse to each of the first surface and the second surface to enable current modulation between the first electrode and the second electrode.