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    Resonator for thermo optic device
    91.
    发明授权
    Resonator for thermo optic device 有权
    热光器件谐振器

    公开(公告)号：US09042697B2

    公开(公告)日：2015-05-26

    申请号：US13483542

    申请日：2012-05-30

    Applicant: Gurtej Singh Sandhu ,  Guy T. Blalock ,  Howard E. Rhodes

    Inventor： Gurtej Singh Sandhu ,  Guy T. Blalock ,  Howard E. Rhodes

    IPC: G02B6/10 ,  G02B6/26 ,  G02B6/42 ,  G02B6/132 ,  G02B6/12 ,  G02B6/136 ,  G02F1/01

    CPC classification number: G02B6/132 ,  G02B6/12004 ,  G02B6/12007 ,  G02B6/136 ,  G02F1/011 ,  G02F1/0147 ,  G02F2203/15

    Abstract: A resonator for thermo optic devices is formed in the same process steps as a waveguide and is formed in a depression of a lower cladding while the waveguide is formed on a surface of the lower cladding. Since upper surfaces of the resonator and waveguide are substantially coplanar, the aspect ratio, as between the waveguide and resonator in an area where the waveguide and resonator front one another, decreases thereby increasing the bandwidth of the resonator. The depression is formed by photomasking and etching the lower cladding before forming the resonator and waveguide. Pluralities of resonators are also taught that are formed in a plurality of depressions of the lower cladding. To decrease resonator bandwidth, waveguide(s) are formed in the depression(s) of the lower cladding while the resonator is formed on the surface. Thermo optic devices formed with these resonators are also taught.

    Abstract translation: 用于热光器件的谐振器以与波导相同的工艺步骤形成，并且形成在下包层的凹陷中，同时波导形成在下包层的表面上。 由于谐振器和波导的上表面基本上是共面的，因此在波导和谐振器彼此前向的区域中的波导和谐振器之间的纵横比减小，从而增加了谐振器的带宽。 在形成谐振器和波导之前，通过光掩模和蚀刻下部包层形成凹陷。 还教导了形成在下部包层的多个凹部中的多个谐振器。 为了减小谐振器带宽，当在表面上形成谐振器时，在下包层的凹陷中形成波导。 还教导了用这些谐振器形成的热光器件。

    PROCESS FOR MAKING HIGH MULTIPLEX ARRAYS
    94.
    发明申请
    PROCESS FOR MAKING HIGH MULTIPLEX ARRAYS 审中-公开
    制作高多重阵列的过程

    公开(公告)号：US20150053641A1

    公开(公告)日：2015-02-26

    申请号：US14470803

    申请日：2014-08-27

    Applicant: Pacific Biosciences of California, Inc.

    Inventor： Denis Zaccarin ,  Stephen Turner ,  Pezhman Monadgemi ,  Ravi Saxena

    IPC: G02B6/12 ,  G02B6/132 ,  G02B6/136 ,  C23C16/50 ,  B05D1/00

    CPC classification number: G01N21/6452 ,  B05D1/005 ,  C23C16/50 ,  G01N21/253 ,  G02B6/12002 ,  G02B6/131 ,  G02B6/132 ,  G02B6/136 ,  G02B2006/12035 ,  G02B2006/12061 ,  G02B2006/12104 ,  G02B2006/12164 ,  G02B2006/12197

    Abstract: Processes for making high multiplex arrays for use in analyzing discrete reactions at ultra high multiplex with reduced optical noise, and increased system flexibility. The high multiplex arrays include substrates having integrated optical components that increase multiplex capability by one or more of increasing density of reaction regions, improving transmission of light to or collection of light from discrete reactions regions. Integrated optical components include reflective optical elements which re-direct illumination light and light emitted from the discrete regions to more efficiently collect emitted light. Particularly preferred applications include single molecule reaction analysis, such as polymerase mediated template dependent nucleic acid synthesis and sequence determination.

    Abstract translation: 用于制造高复用阵列的方法，用于分析具有降低光噪声的超高复用度下的离散反应，并提高系统灵活性。 高多路复用阵列包括具有集成的光学部件的衬底，其通过一个或多个增加的反应区域的密度增加多重能力，改善光从离散反射区域发射或收集光。 集成光学部件包括反射光学元件，其重新引导照明光和从离散区域发射的光以更有效地收集发射的光。 特别优选的应用包括单分子反应分析，例如聚合酶介导的模板依赖性核酸合成和序列测定。

    Cantilever couplers for intra-chip coupling to photonic integrated circuits
    97.
    发明授权
    Cantilever couplers for intra-chip coupling to photonic integrated circuits 有权
    用于片内耦合到光子集成电路的悬臂耦合器

    公开(公告)号：US08442368B1

    公开(公告)日：2013-05-14

    申请号：US12692346

    申请日：2010-01-22

    Applicant: Ronald M. Reano ,  Peng Sun

    Inventor： Ronald M. Reano ,  Peng Sun

    IPC: G02B6/26

    CPC classification number: G02B6/136 ,  G02B6/132

    Abstract: Development of Integrated Optical Circuits depends greatly on progress in coupling light to and between chip devices. Exemplary disclosed embodiments provide a system and method of fabricating couplers for optical chips that may allow for access to devices on the entire chip surface. Cantilever couplers comprising optical waveguides are deflected out-of-plane creating access to remote portions of devices. An exemplary system and method may provide waveguides with tunable angles of deflection creating greater flexibility in optical coupling options.

    Abstract translation: 集成光电路的发展在很大程度上取决于将光耦合到芯片器件之间和之间的进展。 示例性的公开的实施例提供了制造用于光学芯片的耦合器的系统和方法，其可以允许访问整个芯片表面上的器件。 包括光波导的悬臂耦合器偏离平面，从而产生对设备的远端部分的访问。 示例性的系统和方法可以为波导提供可调节的偏转角，从而在光耦合选项中产生更大的灵活性。

    Method of manufacturing semiconductor device having optical devices
    98.
    发明授权
    Method of manufacturing semiconductor device having optical devices 有权
    具有光学器件的半导体器件的制造方法

    公开(公告)号：US08394705B2

    公开(公告)日：2013-03-12

    申请号：US12783216

    申请日：2010-05-19

    Applicant: In Gyoo Kim ,  Dae Seo Park ,  Jun Taek Hong ,  Gyungock Kim

    Inventor： In Gyoo Kim ,  Dae Seo Park ,  Jun Taek Hong ,  Gyungock Kim

    IPC: H01L21/76

    CPC classification number: G02B6/136 ,  G02B6/132 ,  G02F1/2257 ,  G02F2001/212 ,  G02F2203/15 ,  H01L27/1203

    Abstract: Provided is a method of manufacturing a semiconductor device. According to the method, a first buried oxide layer is formed in the semiconductor substrate in a first region, such that a first semiconductor layer is defined on the first buried oxide layer. An active portion is defined by forming a trench in the semiconductor substrate in a second region. A capping semiconductor pattern is formed on a top surface and an upper portion of a sidewall of the active portion. An oxide layer is formed by oxidizing the capping semiconductor pattern and an exposed lower portion of the sidewall of the active portion, such that the oxide layer surrounds a non-oxidized portion of the active portion. The non-oxidized portion of the active portion is a core and one end of the core is connected to a first optical device formed at the first semiconductor.

    Abstract translation: 提供一种制造半导体器件的方法。 根据该方法，在第一区域中的半导体衬底中形成第一掩埋氧化物层，使得第一半导体层被限定在第一掩埋氧化物层上。 通过在第二区域中在半导体衬底中形成沟槽来限定有源部分。 在有源部分的侧壁的顶表面和上部形成封盖半导体图案。 通过氧化覆盖半导体图案和有源部分的侧壁的暴露下部来形成氧化物层，使得氧化物层包围有源部分的未氧化部分。 有源部分的未氧化部分是芯，并且芯的一端连接到形成在第一半导体处的第一光学器件。

    Method of fabricating a planar substrate having optical waveguides
    100.
    发明授权
    Method of fabricating a planar substrate having optical waveguides 有权
    制造具有光波导的平面基板的方法

    公开(公告)号：US08218933B2

    公开(公告)日：2012-07-10

    申请号：US12311142

    申请日：2007-09-18

    Applicant: Faisal Rafiq Mahamd Adikan ,  Andrew Simon Webb ,  Corin Barry Edmund Gawith ,  Peter George Robin Smith ,  David Neil Payne ,  Jayanta Kumar Sahu

    Inventor： Faisal Rafiq Mahamd Adikan ,  Andrew Simon Webb ,  Corin Barry Edmund Gawith ,  Peter George Robin Smith ,  David Neil Payne ,  Jayanta Kumar Sahu

    IPC: G02B6/10 ,  G02B6/04

    CPC classification number: G02B6/132 ,  C03B19/1469 ,  C03B2201/34 ,  G02B6/12007

    Abstract: A method of producing a planar substrate having waveguide channels, which method comprises: (i) providing a tube (6) of a substrate material; (ii) depositing silica layers (110) on the inside of the tube (6), the silica layers (110) being doped with a photosensitive material; (iii) drawing the tube (6) so that the cross-sectional size of the tube (109) is reduced; (iv) before or after the reducing of the cross-sectional size of the tube (6), causing the tube (6) to collapse into a flat shape by applying a low pressure to the tube, whereby the deposited silica layers together form a photosensitive silica layer (111); (v) cutting to required lengths the tube (6) which has been collapsed and reduced in cross-sectional size; and (vi) using laser writing to define waveguide channels in the cut lengths of the tube (6) and thereby to produce the planar substrate having the waveguide channels.

    Abstract translation: 一种制造具有波导通道的平面基板的方法，该方法包括：（i）提供基板材料的管（6）; （ii）在所述管（6）的内部沉积二氧化硅层（110），所述二氧化硅层（110）掺杂感光材料; （iii）拉伸管（6），使得管（109）的横截面尺寸减小; （iv）在减小管（6）的横截面尺寸之前或之后，通过对管施加低压使管（6）塌陷成平坦形状，由此沉积的二氧化硅层一起形成 光敏二氧化硅层（111）; （v）切割所需的长度，其已经被折叠并且具有横截面尺寸减小的管（6）; 和（vi）使用激光写入来限定管（6）的切割长度中的波导通道，从而产生具有波导通道的平面基板。

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