摘要:
A system for an engine for forecasting cyber threats and a method enabling the forecast of a low-level cyber threat and the forecast of a high-level cyber threat using the low-level cyber threat in a hierarchical structure of cyber threats are provided. The system includes a forecast information database which stores forecast information including cyber threat forecast items, a forecast schedule related to the items, forecast simulation information, forecast item hierarchical structure information, time series data on cyber threats, and sample data on cyber threats; a forecast engine core subsystem which forecasts the levels of threats for the cyber threat forecast items having a hierarchical structure using the forecast information stored in the forecast information database; and a forecast engine control interface which receives control commands for the forecast engine core subsystem from a user or external system, and delivers the received control commands to the forecast engine core subsystem.
摘要:
A manufacturing method of a photonic crystal is provided. In the method, a high-refractive-index material is conformally deposited on an exposed portion of a periodic template composed of a low-refractive-index material by an atomic layer deposition process so that a difference in refractive indices or dielectric constants between the template and adjacent air becomes greater, which makes it possible to form a three-dimensional photonic crystal having a superior photonic bandgap. Herein, the three-dimensional structure may be prepared by a layer-by-layer method.
摘要:
Provided are a system and method for predicting a cyber threat. The system and method collect various variables and synthetically predict the frequency, dangerousness, possibility, and time of the occurrence of a cyber threat including hacking, a worm/virus, a Denial of Service (DoS) attack, illegal system access, a malicious code, a social engineering attack, system/data falsification, cyber terror/war, weakness exploitation, etc., using a time-series analysis method and a Delphi method, and inform a user in advance of the prediction result, thereby enabling the user to prepare against the cyber threat.
摘要:
A layer deposition method includes: feeding a reactant with a first flow of an inert gas as a carrier gas into a reaction chamber to chemisorb the reactant on a substrate; feeding the first flow of the inert gas to purge the reaction chamber and a first reactant feed line; and feeding the second flow of the inert gas into the reaction chamber through a feed line different from the first reactant feed line.
摘要:
An apparatus and method for detecting anomalous traffic are provided. More particularly, an apparatus and method for detecting anomalous traffic based on entropy of network traffic are provided. The apparatus of detecting anomalous traffic includes: an entropy extraction module for extracting entropy from network traffic; a visualization module for generating an entropy graph based on the entropy; a graph model experience module for updating a graph model for each network attack based on the entropy graph; and an anomalous traffic detection module for detecting anomalous traffic based on the entropy graph and the graph model for each network attack and outputting the detection results to a user. In the apparatus and method, anomalous traffic is detected based on network entropy rather than simple statistics based on the amount of traffic, so that a false alarm rate of the apparatus for detecting anomalous traffic can be reduced.
摘要:
A semiconductor device and a method for forming the same. A dielectric layer is formed on a semiconductor substrate or on a lower electrode of a capacitor. Vacuum annealing is performed on the dielectric layer. Thus, impurities remaining in the dielectric layer can be effectively removed, and the dielectric layer can be densified. As a result, the electrical characteristics of the semiconductor device are improved. For example, the leakage current characteristics of the dielectric layer are improved and capacitance is increased.
摘要:
The present invention provides methods of forming metal thin films, lanthanum oxide films and high dielectric films. Compositions of metal thin films, lanthanum oxide films and high dielectric films are also provided. Further provided are semiconductor devices comprising the metal thin films, lanthanum oxide films and high dielectric films provided herein.
摘要:
An apparatus for depositing a thin film includes a reaction chamber, a reaction gas provider to supply a reaction gas and/or inert gas to the reaction chamber, an oxidant provider to supply a first oxidant and a second oxidant to the reaction chamber, and an air drain to exhaust gas from the apparatus. The oxidant provider is operable to supply the second oxidant to the reaction chamber using the first oxidant as a transfer gas.
摘要:
A method for fabricating an integrated circuit capacitor includes the steps of forming a first electrode on a microelectronic substrate, and plasma treating the first electrode with a with a plasma of a gas including nitrogen and oxygen. A dielectric film is formed on the plasma treated first electrode opposite the microelectronic substrate. A second electrode is formed on the dielectric film opposite the plasma treated first electrode.
摘要:
Disclosed are methods of forming dielectric materials using atomic layer deposition (ALD) and methods of forming dielectric layers from such materials on a semiconductor device. The ALD process utilizes a first reactant containing at least one alkoxide group that is chemisorbed onto a surface of a substrate and then reacted with an activated oxidant that contains no hydroxyl group to form a dielectric material exhibiting excellent step coverage and improved leakage current characteristics.