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    OPTICAL ELEMENTS AND INFORMATION STORAGE DEVICES INCLUDING THE SAME
    101.
    发明申请
    OPTICAL ELEMENTS AND INFORMATION STORAGE DEVICES INCLUDING THE SAME 有权
    光学元件和信息存储设备，包括它们

    公开(公告)号：US20120257484A1

    公开(公告)日：2012-10-11

    申请号：US13297713

    申请日：2011-11-16

    Applicant: Sung-chul Lee ,  Seung-hoon Han ,  In-kyeong Yoo

    Inventor： Sung-chul Lee ,  Seung-hoon Han ,  In-kyeong Yoo

    IPC: G11B13/08 ,  G02B6/00

    CPC classification number: G11C13/06 ,  G02B5/008 ,  G02F2203/10

    Abstract: An optical element and an information storage device including the same. The optical element may include an optical waveguide structure for transforming circularly polarized light into plasmon and transmitting the plasmon. The optical waveguide structure may emit a circularly polarized plasmonic field. The optical element may be used in an information storage device. For example, the information storage device may include a recording medium and a recording element for recording information on the recording medium, and the recording element may include the optical element. The information may be recorded on the recording medium by using the circularly polarized plasmonic field generated by the optical element.

    Abstract translation: 光学元件和包括该元件的信息存储装置。 光学元件可以包括用于将圆偏振光转换成等离子体并传输等离子体的光波导结构。 光波导结构可以发射圆偏振等离子体场。 光学元件可以用在信息存储装置中。 例如，信息存储装置可以包括用于在记录介质上记录信息的记录介质和记录元件，并且记录元件可以包括光学元件。 信息可以通过使用由光学元件产生的圆偏振等离子体场来记录在记录介质上。

    Resistive RAM having at least one varistor and methods of operating the same
    105.
    发明授权
    Resistive RAM having at least one varistor and methods of operating the same 有权
    具有至少一个压敏电阻的电阻RAM及其操作方法

    公开(公告)号：US07714313B2

    公开(公告)日：2010-05-11

    申请号：US11655086

    申请日：2007-01-19

    Applicant: Jung-Hyun Lee ,  Eun-Hong Lee ,  Sang-Jun Choi ,  In-Kyeong Yoo ,  Myoung-Jae Lee

    Inventor： Jung-Hyun Lee ,  Eun-Hong Lee ,  Sang-Jun Choi ,  In-Kyeong Yoo ,  Myoung-Jae Lee

    IPC: H01L47/00

    CPC classification number: G11C13/003 ,  G11C13/0007 ,  G11C2213/32 ,  G11C2213/76

    Abstract: Resistive memory devices having at least one varistor and methods of operating the same are disclosed. The resistive memory device may include at least one bottom electrode line, at least one top electrode line crossing the at least one bottom electrode line, and at least one stack structure disposed at an intersection of the at least one top electrode line and the at least one bottom electrode line including a varistor and a data storage layer.

    Abstract translation: 公开了具有至少一个压敏电阻的电阻式存储器件及其操作方法。 电阻式存储器件可以包括至少一个底部电极线，与至少一个底部电极线交叉的至少一个顶部电极线以及至少一个堆叠结构，该至少一个堆叠结构设置在至少一个顶部电极线和至少一个顶部电极线的交点处 一个底部电极线包括变阻器和数据存储层。

    Transistor, method of manufacturing transistor, and method of operating transistor
    107.
    发明申请
    Transistor, method of manufacturing transistor, and method of operating transistor 失效
    晶体管，晶体管的制造方法以及晶体管的工作方法

    公开(公告)号：US20090186444A1

    公开(公告)日：2009-07-23

    申请号：US12216742

    申请日：2008-07-10

    Applicant: Choong-Rae Cho ,  In-Kyeong Yoo ,  Myoung-Jae Lee

    Inventor： Choong-Rae Cho ,  In-Kyeong Yoo ,  Myoung-Jae Lee

    IPC: H01L21/20

    CPC classification number: H01L29/685

    Abstract: A transistor in which a physical property of its channel is changed according to an applied voltage, and methods of manufacturing and operating the same are provided. The transistor may include a first conductive layer on a substrate, a phase change layer and a second conductive layer which are sequentially stacked on the first conductive layer, a first current direction limiting unit and a second current direction limiting unit formed on the second conductive layer by being separated within a space, a third conductive layer and a fourth conductive layer formed on the first current direction limiting unit and the second current direction limiting unit, respectively, a word line connected to the third conductive layer, a bit line connected to the fourth conductive layer, and a voltage lowering unit connected to the word line.

    Abstract translation: 提供其通道的物理特性根据施加的电压而改变的晶体管，并且提供其制造和操作方法。 晶体管可以包括基板上的第一导电层，相继层叠在第一导电层上的相变层和第二导电层，形成在第二导电层上的第一电流方向限制单元和第二电流方向限制单元 通过在空间内分离，分别形成在第一电流方向限制单元和第二电流方向限制单元上的第三导电层和第四导电层，连接到第三导电层的字线，连接到第三导电层的位线 第四导电层和连接到字线的降压单元。

    Method of manufacturing high-density data storage medium
    108.
    发明授权
    Method of manufacturing high-density data storage medium 失效
    制造高密度数据存储介质的方法

    公开(公告)号：US07479212B2

    公开(公告)日：2009-01-20

    申请号：US11640229

    申请日：2006-12-18

    Applicant: Seung-bum Hong ,  In-kyeong Yoo ,  Ju-hwan Jung

    Inventor： Seung-bum Hong ,  In-kyeong Yoo ,  Ju-hwan Jung

    IPC: C25D1/00 ,  C25D11/02

    CPC classification number: B82Y10/00 ,  G11B9/08 ,  G11B9/14 ,  G11B9/1409 ,  G11B9/1472 ,  G11B9/149 ,  G11B11/08 ,  G11B13/06

    Abstract: A high-density data storage medium, a method of manufacturing the data storage medium, a high-density data storage apparatus, and methods of writing data on, and reading and erasing data from the data storage medium by using the data storage apparatus are provided. The data storage medium includes a lower electrode, an insulation layer deposited on the lower electrode, a photoelectron emission layer deposited on the insulation layer and having a plurality of protrusions from which photoelectrons are emitted due to collisions between the protrusions and photons, and a dielectric layer deposited on the photoelectron emission layer and storing the photoelectrons emitted from the photoelectron emission layer. The data storage apparatus includes a stage supporting a data storage medium, which includes a lower electrode, an insulation layer deposited on the lower electrode, a photoelectron emission layer deposited on the insulation layer and having a plurality of protrusions from which photoelectrons are emitted due to collisions between the protrusions and photons, and a dielectric layer deposited on the photoelectron emission layer and storing the photoelectrons emitted from the photoelectron emission layer, a scanner driving the stage, a probe placed over the data storage medium and including a tip forming an electric field with the data storage medium and a cantilever supporting the tip placed at its one end so as to maintain a predetermined distance between the data storage medium and the tip, a circuit unit applying a driving signal, a data write signal, and a data erase signal to the scanner and the probe and detecting a data read signal, and a light source irradiating light on the data storage medium.

    Abstract translation: 提供高密度数据存储介质，数据存储介质的制造方法，高密度数据存储装置以及通过使用数据存储装置从数据存储介质写数据和读取和擦除数据的方法 。 数据存储介质包括下电极，沉积在下电极上的绝缘层，沉积在绝缘层上的光电子发射层，并且具有多个突起，由于突起和光子之间的碰撞而从其中发射光电子;以及电介质 层沉积在光电子发射层上并存储从光电子发射层发射的光电子。 该数据存储装置包括支持数据存储介质的载台，该载台包括下电极，沉积在下电极上的绝缘层，沉积在绝缘层上的光电子发射层，并且具有多个突起，由于 突起和光子之间的碰撞，以及沉积在光电子发射层上并存储从光电子发射层发射的光电子的介电层，驱动载物台的扫描仪，放置在数据存储介质上的探针，并且包括形成电场的尖端 数据存储介质和悬臂支撑设置在其一端的尖端，以便保持数据存储介质和尖端之间的预定距离，施加驱动信号的电路单元，数据写入信号和数据擦除信号 扫描仪和探头，并检测数据读取信号，以及光源照射数据 存储介质。

    Method of manufacturing a memory device
    110.
    发明授权
    Method of manufacturing a memory device 失效
    制造存储器件的方法

    公开(公告)号：US07407856B2

    公开(公告)日：2008-08-05

    申请号：US11296510

    申请日：2005-12-08

    Applicant: In-kyeong Yoo ,  Byong-man Kim

    Inventor： In-kyeong Yoo ,  Byong-man Kim

    IPC: H01L21/336

    CPC classification number: B82Y10/00 ,  G11C2216/08 ,  H01L21/28273 ,  H01L29/42332 ,  H01L29/66825 ,  H01L29/7881

    Abstract: A method of manufacturing a memory device includes defining a field region and an active region in a substrate, forming a field oxide layer on the field region, forming an insulating layer on the active region, patterning the insulating layer to form first and second bit lines separated from and parallel to each other on the active region, forming a memory element for storing data in a nonvolatile state, wherein the memory element passes across the first and second bit lines, and forming a word line on the insulating layer and the memory element.

    Abstract translation: 一种制造存储器件的方法包括在衬底中限定场区域和有源区域，在场区域上形成场氧化物层，在有源区域上形成绝缘层，图案化绝缘层以形成第一和第二位线 形成用于将数据存储在非易失性状态的存储元件，其中存储元件穿过第一和第二位线，并在绝缘层和存储元件上形成字线 。

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