Abstract:
Stitched die packaging techniques and structures are described in which reconstituted chips are formed using wafer reconstitution and die-stitching techniques. In an embodiment, a chip including a reconstituted chip-level back endo of the line (BEOL) build-up structure to connect a die set embedded in an inorganic gap fill material.
Abstract:
In some embodiments, a system may include an integrated circuit. The integrated circuit may include a substrate including a first surface, a second surface substantially opposite of the first surface, and a first set of electrical conductors coupled to the first surface. The first set of electrical conductors may function to electrically connect the integrated circuit to a circuit board. The integrated circuit may include a semiconductor die coupled to the second surface of the substrate using a second set of electrical conductors. The integrated circuit may include a passive device dimensioned to be integrated with the integrated circuit. The passive device may be positioned between the second surface and at least one of the first set of electrical conductors. The die may be electrically connected to a second side of the passive device. A first side of the passive device may be available to be electrically connected to a second device.
Abstract:
Packages including an embedded die with through silicon vias (TSVs) are described. In an embodiment, a first level die including TSVs is embedded between a first redistribution layer (RDL) and a second RDL, and a second level die is mounted on a top side of the first redistribution layer. In an embodiment, the first level die is an active die, less than 50 μm thick.
Abstract:
In some embodiments, a semiconductor device package on package assembly may include a first package, a second package, and a third package. The first package may include a first surface, a second surface, a first die, and a first set of electrical conductors. The first set of electrical conductors may be configured to electrically connect the package on package assembly. The second package may include a third surface and a fourth surface, and a local memory module. The third surface may be coupled to the second surface. The first package may be electrically coupled to the second package. The third package may include a fifth surface and a sixth surface, and a main memory module. The fifth surface may be coupled to the fourth surface. The third package may be electrically coupled to the first package and/or the second package.
Abstract:
Packages and methods of formation are described. In an embodiment, a package includes a redistribution layer (RDL) formed directly on a top die, and a bottom die mounted on a back surface of the RDL.
Abstract:
A semiconductor device package includes a logic die coupled to a memory die in a side-by-side configuration on a redistribution layer (e.g., the logic die and the memory die are substantially adjacent). A silicon bridge may be used to interconnect the logic die and the memory die. The silicon bridge may be positioned between the die and the redistribution layer. The silicon bridge and the redistribution layer may be coupled to the lower (active) surfaces of the logic die and the memory die. The package may be formed using a wafer level process that forms a plurality of packages simultaneously.