公开(公告)号：US20090274852A1

公开(公告)日：2009-11-05

申请号：US12496652

申请日：2009-07-02

申请人： Neng-Kuo Chen ,  Teng-Chun Tsai ,  Chien-Chung Huang

发明人： Neng-Kuo Chen ,  Teng-Chun Tsai ,  Chien-Chung Huang

IPC分类号： B05D1/00

CPC分类号： H01L21/31633 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/823807 ,  H01L23/3192 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7843 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for fabricating strained silicon transistors is disclosed. First, a semiconductor substrate is provided, in which the semiconductor substrate includes a gate, at least a spacer, and a source/drain region formed thereon. Next, a precursor, silane, and ammonia are injected, in which the precursor is reacted with silane and ammonia to form a high compressive stress film on the surface of the gate, the spacer, and the source/drain region. Preferably, the high compressive stress film can be utilized in the fabrication of a poly stressor, a contact etch stop layer, and dual contact etch stop layers.

摘要翻译： 公开了制造应变硅晶体管的方法。 首先，提供半导体衬底，其中半导体衬底包括栅极，至少一个间隔物和形成在其上的源极/漏极区域。 接下来，注入前体，硅烷和氨，其中前体与硅烷和氨反应，以在栅极，间隔物和源极/漏极区的表面上形成高压缩应力膜。 优选地，高压缩应力膜可以用于制造多应力器，接触蚀刻停止层和双接触蚀刻停止层。

公开(公告)号：US07566668B2

公开(公告)日：2009-07-28

申请号：US11963999

申请日：2007-12-24

申请人： Neng-Kuo Chen ,  Teng-Chun Tsai ,  Chien-Chung Huang

发明人： Neng-Kuo Chen ,  Teng-Chun Tsai ,  Chien-Chung Huang

IPC分类号： H01L21/469 ,  H01L21/338

CPC分类号： H01L21/76837 ,  H01L21/76801

摘要： A method of forming a contact is provided. A substrate having at least two metal oxide semiconductor devices is provided and a gap is formed between the two devices. A first stress layer is formed over the substrate to cover the metal-oxide semiconductor devices and the substrate. The first stress layer is formed by first forming a first stress material layer over the substrate to cover the metal-oxide semiconductor devices and to fill the gap, the stress material inside the gap. An etching back process is then performed to remove a portion of the stress material layer inside the gap. A second stress layer and a dielectric layer are sequentially formed on the first stress layer. A portion of the second stress layer is removed to form a contact opening. A first conductive layer is filled into the contact opening to form a contact.

摘要翻译： 提供了形成接触的方法。 提供具有至少两个金属氧化物半导体器件的衬底，并且在两个器件之间形成间隙。 在衬底上形成第一应力层以覆盖金属氧化物半导体器件和衬底。 第一应力层通过首先在衬底上形成第一应力材料层以覆盖金属氧化物半导体器件并填充间隙内的应力材料而形成。 然后执行回蚀处理以去除间隙内部的应力材料层的一部分。 第一应力层和电介质层依次形成在第一应力层上。 去除第二应力层的一部分以形成接触开口。 将第一导电层填充到接触开口中以形成接触。

公开(公告)号：US20090157455A1

公开(公告)日：2009-06-18

申请号：US12181037

申请日：2008-07-28

申请人： Wen-Chang Kuo ,  Tien-Der Chiang ,  Chien-Chung Huang ,  Chun-Yi Chen

发明人： Wen-Chang Kuo ,  Tien-Der Chiang ,  Chien-Chung Huang ,  Chun-Yi Chen

IPC分类号： G06Q10/00 ,  G06F17/30

CPC分类号： G06Q10/06311 ,  G06Q10/06 ,  G06Q10/063 ,  G06Q10/06393

摘要： A method and system of providing instructions in addressing an equipment problem are provided. An indication of an equipment problem is checked against a solution database to identify at least one suggested solution to the equipment problem. A suggested solution from the at least one suggested solution is provided. An actual fix solution implemented in association with the equipment problem is recorded.

摘要翻译： 提供了一种提供解决设备问题的指令的方法和系统。 根据解决方案数据库检查设备问题的指示，以识别设备问题的至少一个建议的解决方案。 提供了至少一个建议的解决方案的建议解决方案。 记录与设备问题相关的实际修复解决方案。

公开(公告)号：US20090068854A1

公开(公告)日：2009-03-12

申请号：US11853475

申请日：2007-09-11

申请人： Neng-Kuo Chen ,  Chao-Ching Hsieh ,  Chien-Chung Huang

发明人： Neng-Kuo Chen ,  Chao-Ching Hsieh ,  Chien-Chung Huang

IPC分类号： H01L21/31

CPC分类号： H01L21/3185 ,  H01L21/76832 ,  H01L21/76837 ,  H01L21/823412 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/7843

摘要： A method for fabricating a silicon nitride gap-filling layer is provided. A pre-multi-step formation process is performed to form a stacked layer constituting as a dense film on a substrate. Then, a post-single step deposition process is conducted to form a cap layer constituting as a sparse film on the stacked layer, wherein the cap layer has a thickness of at least 10% of the total film thickness.

摘要翻译： 提供了一种制造氮化硅间隙填充层的方法。 进行预多级形成处理，以在基板上形成构成致密膜的层叠层。 然后，进行单一步骤沉积处理，以在层叠层上形成构成稀薄膜的覆盖层，其中盖层的厚度为总膜厚度的至少10％。

公开(公告)号：US07494878B2

公开(公告)日：2009-02-24

申请号：US11552532

申请日：2006-10-25

申请人： Kun-Hsien Lee ,  Cheng-Tung Huang ,  Wen-Han Hung ,  Shyh-Fann Ting ,  Li-Shian Jeng ,  Tzyy-Ming Cheng ,  Neng-Kuo Chen ,  Shao-Ta Hsu ,  Teng-Chun Tsai ,  Chien-Chung Huang

发明人： Kun-Hsien Lee ,  Cheng-Tung Huang ,  Wen-Han Hung ,  Shyh-Fann Ting ,  Li-Shian Jeng ,  Tzyy-Ming Cheng ,  Neng-Kuo Chen ,  Shao-Ta Hsu ,  Teng-Chun Tsai ,  Chien-Chung Huang

IPC分类号： H01L21/8234

CPC分类号： H01L21/823807 ,  H01L21/823835 ,  H01L21/82385 ,  H01L21/823864 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/7843

摘要： A method of manufacturing a MOS transistor device. First, a semiconductor substrate having a gate structure is prepared. The gate structure has two sidewalls and a liner on the sidewalls. Subsequently, a stressed cap layer is formed on the semiconductor substrate, and covers the gate structure and the liner. Next, an activating process is performed. Furthermore, the stressed cap layer is etched to be a salicide block. Afterward, a salicide process is performed to form a silicide layer on the regions that are not covered by the stressed cap layer.

摘要翻译： 一种制造MOS晶体管器件的方法。 首先，准备具有栅极结构的半导体基板。 栅极结构在侧壁上具有两个侧壁和衬垫。 随后，在半导体衬底上形成应力覆盖层，并覆盖栅极结构和衬垫。 接下来，执行激活处理。 此外，将应力覆盖层蚀刻成为自对准硅化物块。 之后，进行自对准处理以在未被应力覆盖层覆盖的区域上形成硅化物层。

公开(公告)号：US07485515B2

公开(公告)日：2009-02-03

申请号：US11308641

申请日：2006-04-17

申请人： Neng-Kuo Chen ,  Teng-Chun Tsai ,  Chien-Chung Huang

发明人： Neng-Kuo Chen ,  Teng-Chun Tsai ,  Chien-Chung Huang

IPC分类号： H01L21/337

CPC分类号： H01L21/0217 ,  H01L21/0214 ,  H01L21/02167 ,  H01L21/02271 ,  H01L21/3145 ,  H01L21/3185 ,  H01L21/823807 ,  H01L29/7843 ,  H01L29/7845

摘要： A method of forming compressive nitride film is provided. The method includes performing a chemical vapor deposition (CVD) process to form a nitride film on a substrate, and the method is characterized by adding a certain gas, selected from among Ar, N2, Kr, Xe, and mixtures thereof. Due to the addition of the foregoing certain gas, it can increase the compressive stress, thereby increasing PMOS drive current gain.

摘要翻译： 提供一种形成压缩氮化物膜的方法。 该方法包括进行化学气相沉积（CVD）工艺以在衬底上形成氮化物膜，该方法的特征在于加入选自Ar，N2，Kr，Xe及其混合物中的某些气体。 由于加入上述某些气体，可以增加压缩应力，从而增加PMOS驱动电流增益。

公开(公告)号：US20080237748A1

公开(公告)日：2008-10-02

申请号：US12123452

申请日：2008-05-19

申请人： Neng-Kuo Chen ,  Teng-Chun Tsai ,  Chien-Chung Huang

发明人： Neng-Kuo Chen ,  Teng-Chun Tsai ,  Chien-Chung Huang

IPC分类号： H01L29/00

CPC分类号： H01L21/31633 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/823807 ,  H01L23/3192 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7843 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for fabricating strained silicon transistors is disclosed. First, a semiconductor substrate is provided, in which the semiconductor substrate includes a gate, at least a spacer, and a source/drain region formed thereon. Next, a precursor, silane, and ammonia are injected, in which the precursor is reacted with silane and ammonia to form a high compressive stress film on the surface of the gate, the spacer, and the source/drain region. Preferably, the high compressive stress film can be utilized in the fabrication of a poly stressor, a contact etch stop layer, and dual contact etch stop layers.

公开(公告)号：US20080224232A1

公开(公告)日：2008-09-18

申请号：US11687185

申请日：2007-03-16

申请人： Chao-Ching Hsieh ,  Yu-Lan Chang ,  Chien-Chung Huang ,  Tzung-Yu Hung ,  Chun-Chieh Chang ,  Yi-Wei Chen

发明人： Chao-Ching Hsieh ,  Yu-Lan Chang ,  Chien-Chung Huang ,  Tzung-Yu Hung ,  Chun-Chieh Chang ,  Yi-Wei Chen

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L21/28097 ,  H01L21/32105 ,  H01L21/3211 ,  H01L29/66507 ,  H01L29/66545

摘要： A silicidation process for a MOS transistor and a resulting transistor structure are described. The MOS transistor includes a silicon substrate, a gate dielectric layer, a silicon gate, a cap layer on the silicon gate, a spacer on the sidewalls of the silicon gate and the cap layer, and S/D regions in the substrate beside the silicon gate. The process includes forming a metal silicide layer on the S/D regions, utilizing plasma of a reactive gas to react a surface layer of the metal silicide layer into a passivation layer, removing the cap layer and then reacting the silicon gate into a fully silicided gate.

摘要翻译： 描述了用于MOS晶体管和所得晶体管结构的硅化工艺。 MOS晶体管包括硅衬底，栅极电介质层，硅栅极，硅栅极上的覆盖层，硅栅极和帽层的侧壁上的间隔物，以及位于硅的旁边的衬底中的S / D区域 门。 该方法包括在S / D区上形成金属硅化物层，利用反应气体的等离子体将金属硅化物层的表面层反应成钝化层，去除覆盖层，然后使硅栅极反应成完全硅化物 门。

公开(公告)号：US20080188088A1

公开(公告)日：2008-08-07

申请号：US11672307

申请日：2007-02-07

申请人： Mei-Ling Chen ,  Kuo-Chih Lai ,  Su-Jen Sung ,  Chien-Chung Huang ,  Yu-Tsung Lai

发明人： Mei-Ling Chen ,  Kuo-Chih Lai ,  Su-Jen Sung ,  Chien-Chung Huang ,  Yu-Tsung Lai

IPC分类号： H01L21/31

CPC分类号： H01L21/31695 ,  H01L21/02164 ,  H01L21/02203 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/7682 ,  H01L21/76835 ,  Y10T428/24992

摘要： A method of forming a porous low-k layer is described. A CVD process is conducted to a substrate, wherein a framework precursor and a porogen precursor are supplied. In an end period of the supply of the framework precursor, the value of at least one deposition parameter negatively correlated with the density of the product of the CVD process is decreased.

摘要翻译： 描述形成多孔低k层的方法。 对基材进行CVD工艺，其中提供骨架前体和致孔剂前体。 在框架前体的供给的结束期间，减少与CVD工艺的产物的密度负相关的至少一个沉积参数的值。

公开(公告)号：US07397124B2

公开(公告)日：2008-07-08

申请号：US11155729

申请日：2005-06-16

申请人： Shao-Chung Hu ,  Yu-Ru Yang ,  Chien-Chung Huang

发明人： Shao-Chung Hu ,  Yu-Ru Yang ,  Chien-Chung Huang

IPC分类号： H01L23/48

CPC分类号： H01L21/76886 ,  H01L21/76805 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76867

摘要： A process of metal interconnects and a structure of metal interconnect produced therefrom are provided. An opening is formed in a dielectric layer. A metal layer is formed over the dielectric layer filling the opening. A film layer is formed on the metal layer and the dielectric layer. The film layer is reacted with the metal layer during a thermal process, and a protective layer is formed on the surface of the metal layer. The portion of the film layer not reacted with the metal layer is removed to avoid short between the metal layers. The protective layer can protect the surface of the metal layer from being oxidized and thus the stability and the reliability of the semiconductor device can be effectively promoted.

摘要翻译： 提供金属互连的工艺和由其制造的金属互连结构。 在电介质层中形成开口。 在填充开口的电介质层上形成金属层。 在金属层和电介质层上形成膜层。 在热处理期间，膜层与金属层反应，在金属层的表面形成保护层。 除去与金属层不反应的膜层的部分，以避免金属层之间的短路。 保护层可以保护金属层的表面免受氧化，从而可以有效地促进半导体器件的稳定性和可靠性。