公开(公告)号：US20080220615A1

公开(公告)日：2008-09-11

申请号：US12107889

申请日：2008-04-23

申请人： Timothy A. Brunner ,  Matthew E. Colburn ,  Elbert Huang ,  Muthumanickam Sankarapandian

发明人： Timothy A. Brunner ,  Matthew E. Colburn ,  Elbert Huang ,  Muthumanickam Sankarapandian

IPC分类号： H01L21/027

CPC分类号： H01L21/76834 ,  G03F7/0035 ,  G03F7/2022 ,  H01L21/76849 ,  Y10S430/146

摘要： A method for forming a self-aligned pattern on an existing pattern on a substrate comprising applying a coating of a solution containing a masking material in a carrier, the masking material being either photo or thermally sensitive; performing a blanket exposure of the substrate; and allowing at least a portion of the masking material to preferential develop in a fashion that is replicates the existing pattern of the substrate. The existing pattern may be comprised of a first set of regions of the substrate having a first reflectivity and a second set of regions of the substrate having a second reflectivity different from the first composition. The first set of regions may include one or more metal elements and the second set of regions may include a dielectric. Structures made in accordance with the method.

摘要翻译： 一种用于在衬底上的现有图案上形成自对准图案的方法，包括在载体中涂覆含有掩蔽材料的溶液的涂层，所述掩蔽材料是光敏的或热敏感的; 进行基板的覆盖曝光; 并且允许至少一部分掩模材料以复制衬底的现有图案的方式优先显影。 现有图案可以由具有第一反射率的第一组基底区域和第二组区域组成，该第二组区域具有不同于第一组成的第二反射率。 第一组区域可以包括一个或多个金属元件，并且第二组区域可以包括电介质。 按照该方法制造的结构。

公开(公告)号：US07407554B2

公开(公告)日：2008-08-05

申请号：US10907688

申请日：2005-04-12

申请人： Matthew E. Colburn ,  Dmitriy Shneyder ,  Shahab Siddiqui

发明人： Matthew E. Colburn ,  Dmitriy Shneyder ,  Shahab Siddiqui

IPC分类号： B08B7/04 ,  G03F7/34

CPC分类号： G03F7/168 ,  G03F7/325 ,  Y10S438/922 ,  Y10S977/733 ,  Y10S977/734

摘要： Methods of developing or removing a select region of block copolymer films using a polar supercritical solvent to dissolve a select portion are disclosed. In one embodiment, the polar supercritical solvent includes chlorodifluoromethane, which may be exposed to the block copolymer film using supercritical carbon dioxide (CO2) as a carrier or chlorodiflouromethane itself in supercritical form. The invention also includes a method of forming a nano-structure including exposing a polymeric film to a polar supercritical solvent to develop at least a portion of the polymeric film. The invention also includes a method of removing a poly(methyl methacrylate-b-styrene) (PMMA-b-S) based resist using a polar supercritical solvent.

摘要翻译： 公开了使用极性超临界溶剂显影或除去嵌段共聚物膜的选择区域以溶解选择部分的方法。 在一个实施方案中，极性超临界溶剂包括氯二氟甲烷，其可以使用超临界二氧化碳（CO 2 CO 2）作为载体或氯二氟乙烷本身以超临界形式暴露于嵌段共聚物膜。 本发明还包括形成纳米结构的方法，包括将聚合物膜暴露于极性超临界溶剂以形成至少一部分聚合物膜。 本发明还包括使用极性超临界溶剂除去聚（甲基丙烯酸甲酯-b-苯乙烯）（PMMA-b-S）基抗蚀剂的方法。

公开(公告)号：US20080171432A1

公开(公告)日：2008-07-17

申请号：US11623478

申请日：2007-01-16

申请人： Lawrence A. Clevenger ,  Matthew E. Colburn ,  Louis C. Hsu ,  Wai-Kin Li

发明人： Lawrence A. Clevenger ,  Matthew E. Colburn ,  Louis C. Hsu ,  Wai-Kin Li

IPC分类号： H01L21/4763

CPC分类号： H01L21/76808 ,  H01L21/7682

摘要： A method for manufacturing a circuit includes the step of providing a first wiring level comprising first wiring level conductors separated by a first wiring level dielectric material. A first dielectric layer with a plurality of inter connect openings and a plurality of gap openings is formed above the first wiring level. The interconnect openings and the gap openings are pinched off with a pinching dielectric material to form relatively low dielectric constant (low-k) volumes in the gap openings. Metallic conductors comprising second wiring level conductors and interconnects to the first wiring level conductors are formed at the interconnect openings while maintaining the relatively low-k volumes in the gap openings. The gap openings with the relatively low-k volumes reduce parasitic capacitance between adjacent conductor structures formed by the conductors and interconnects.

摘要翻译： 一种制造电路的方法包括提供包括由第一布线层介电材料分隔开的第一布线层导体的第一布线层的步骤。 具有多个互连开口和多个间隙开口的第一电介质层形成在第一布线层的上方。 互连开口和间隙开口用夹持电介质材料夹紧，以在间隙开口中形成相对较低的介电常数（低k）体积。 包括第二布线层导体的金属导体和与第一布线层导体的互连形成在互连开口处，同时保持间隙开口中相对低的k体积。 具有相对低k体积的间隙开口减小由导体和互连件形成的相邻导体结构之间的寄生电容。

公开(公告)号：US20080118645A1

公开(公告)日：2008-05-22

申请号：US11600140

申请日：2006-11-16

申请人： Matthew E. Colburn ,  Theodore G. van Kessel ,  Yves C. Martin ,  Dirk Pfeiffer

发明人： Matthew E. Colburn ,  Theodore G. van Kessel ,  Yves C. Martin ,  Dirk Pfeiffer

IPC分类号： B05D3/12 ,  B05C11/00

CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00

摘要： A method (and apparatus) of imprint lithography, includes imprinting, via a patterned mask, a pattern into a resist layer on a substrate, and overlaying a cladding layer over the imprinted resist layer. A portion of the cladding layer is used as a hard mask for a subsequent processing.

摘要翻译： 压印光刻的方法（和装置）包括通过图案化掩模将图案压印到衬底上的抗蚀剂层中，并在覆盖的抗蚀剂层上覆盖覆层。 包覆层的一部分用作后续处理的硬掩模。

公开(公告)号：US09058997B2

公开(公告)日：2015-06-16

申请号：US13449741

申请日：2012-04-18

申请人： Martin Burkhardt ,  Sean D. Burns ,  Matthew E. Colburn

发明人： Martin Burkhardt ,  Sean D. Burns ,  Matthew E. Colburn

IPC分类号： G03C1/76 ,  H01L21/027 ,  H01L21/033 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768

CPC分类号： H01L21/0274 ,  H01L21/0334 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76811 ,  H01L21/76816 ,  H01L2221/1021

摘要： Methods of multiple exposure in the fields of deep ultraviolet photolithography, next generation lithography, and semiconductor fabrication comprise a spin-castable methodology for enabling multiple patterning by completing a standard lithography process for the first exposure, followed by spin casting an etch selective overcoat layer, applying a second photoresist, and subsequent lithography. Utilizing the etch selectivity of each layer, provides a cost-effective, high resolution patterning technique. The invention comprises a number of double or multiple patterning techniques, some aimed at achieving resolution benefits, as well as others that achieve cost savings, or both resolution and cost savings. These techniques include, but are not limited to, pitch splitting techniques, pattern decomposition techniques, and dual damascene structures.

摘要翻译： 在深紫外光刻，下一代光刻和半导体制造领域中多次曝光的方法包括通过完成用于第一次曝光的标准光刻工艺，随后旋转铸造蚀刻选择性外涂层，实现多重图案化的可旋转铸造方法， 施加第二光刻胶和随后的光刻。 利用各层的蚀刻选择性，提供了经济有效的高分辨率图案化技术。 本发明包括一些双重或多重图案化技术，一些旨在实现分辨率优点的技术，以及其他实现成本节约或者分辨率和成本节省的技术。 这些技术包括但不限于音调分割技术，图案分解技术和双镶嵌结构。

公开(公告)号：US08721952B2

公开(公告)日：2014-05-13

申请号：US10989078

申请日：2004-11-16

申请人： Matthew E. Colburn ,  Yves C. Martin ,  Theodore G. van Kessel ,  Hematha K. Wickramasinghe

发明人： Matthew E. Colburn ,  Yves C. Martin ,  Theodore G. van Kessel ,  Hematha K. Wickramasinghe

IPC分类号： B29C59/02

CPC分类号： B29C43/021 ,  B29C43/003 ,  B29C43/3642 ,  B29C2043/025 ,  B29C2043/3647 ,  B29C2043/3649 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/0273

摘要： A method (and apparatus) for nano lithography, includes applying a pneumatic pressure to at least one of a surface of a semi-rigid mask or template and a portion of a surface of a resist-coated workpiece, and, by the applying of the pneumatic pressure, transferring a pattern from the mask to the workpiece.

摘要翻译： 一种用于纳米光刻的方法（和装置），包括向半刚性掩模或模板的表面和抗蚀剂涂覆的工件的表面的一部分中的至少一个施加气动压力，并且通过施加 气动压力，将图案从面罩转移到工件。

公开(公告)号：US08536031B2

公开(公告)日：2013-09-17

申请号：US12708877

申请日：2010-02-19

申请人： John C. Arnold ,  Kuang-Jung Chen ,  Matthew E. Colburn ,  Dario L. Goldfarb ,  Stefan Harrer ,  Steven J. Holmes ,  Pushkara Varanasi

发明人： John C. Arnold ,  Kuang-Jung Chen ,  Matthew E. Colburn ,  Dario L. Goldfarb ,  Stefan Harrer ,  Steven J. Holmes ,  Pushkara Varanasi

IPC分类号： H01L21/26 ,  H01L21/42

CPC分类号： H01L23/53295 ,  G03F7/091 ,  G03F7/38 ,  H01L21/0274 ,  H01L21/31144 ,  H01L21/76811 ,  H01L21/76813 ,  H01L2221/1021 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for fabricating a dual damascene structure includes providing a first photoresist layer coated on an underlying dielectric stack, exposing said first photoresist layer to a first predetermined pattern of light, coating a second photoresist layer onto the pre-exposed first photoresist layer, exposing said second photoresist layer to a second predetermined pattern of light, optionally post-exposure baking the multi-tiered photoresist layers and developing said photoresist layers to form a multi-tiered dual damascene structure in the photoresist layers.

公开(公告)号：US08513769B2

公开(公告)日：2013-08-20

申请号：US12765275

申请日：2010-04-22

申请人： Charles T. Black ,  Matthew E. Colburn ,  Timothy J. Dalton ,  Daniel C. Edelstein ,  Wai-Kin Li ,  Anthony K. Stamper ,  Haining S. Yang

发明人： Charles T. Black ,  Matthew E. Colburn ,  Timothy J. Dalton ,  Daniel C. Edelstein ,  Wai-Kin Li ,  Anthony K. Stamper ,  Haining S. Yang

IPC分类号： H01L23/5256 ,  H01L23/5329 ,  H01L21/7682

CPC分类号： H01L23/5256 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76816 ,  H01L23/5226 ,  H01L23/5228 ,  H01L27/101 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： Electrical fuses and resistors having a sublithographic lateral or vertical dimension are provided. A conductive structure comprising a conductor or a semiconductor is formed on a semiconductor substrate. At least one insulator layer is formed on the conductive structure. A recessed area is formed in the at least one insulator layer. Self-assembling block copolymers are applied into the recessed area and annealed to form a fist set of polymer blocks and a second set of polymer blocks. The first set of polymer blocks are etched selective to the second set and the at least one insulator layer. Features having sublithographic dimensions are formed in the at least one insulator layer and/or the conductive structure. Various semiconductor structures having sublithographic dimensions are formed including electrical fuses and resistors.

摘要翻译： 提供具有亚光刻横向或垂直尺寸的电熔丝和电阻器。 包括导体或半导体的导电结构形成在半导体衬底上。 在导电结构上形成至少一个绝缘体层。 在所述至少一个绝缘体层中形成凹陷区域。 将自组装嵌段共聚物施加到凹陷区域中并退火以形成第一组聚合物嵌段和第二组聚合物嵌段。 第一组聚合物嵌段被选择性蚀刻到第二组和至少一个绝缘体层。 具有亚光刻尺寸的特征形成在至少一个绝缘体层和/或导电结构中。 形成具有亚光刻尺寸的各种半导体结构，其包括电熔丝和电阻器。

公开(公告)号：US08358011B1

公开(公告)日：2013-01-22

申请号：US11899842

申请日：2007-09-07

申请人： Matthew E. Colburn ,  Satya V. Nitta ,  Sampath Purushothaman ,  Charles Black ,  Kathryn Guarini

发明人： Matthew E. Colburn ,  Satya V. Nitta ,  Sampath Purushothaman ,  Charles Black ,  Kathryn Guarini

IPC分类号： H01L23/48

CPC分类号： H01L23/53295 ,  H01L21/7682 ,  H01L23/5222 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for forming an interconnect structure with nanocolumnar intermetal dielectric is described involving the construction of an interconnect structure using a solid dielectric, and introducing a regular array of vertically aligned nanoscale pores through stencil formation and etching to form a hole array and subsequently pinching off the tops of the hole array with a cap dielectric. Variations of the method and means to construct a multilevel nanocolumnar interconnect structure are also described.

摘要翻译： 描述了一种形成具有纳米柱状金属间电介质的互连结构的方法，涉及使用固体电介质构造互连结构，并通过模板形成和蚀刻引入垂直排列的纳米尺度孔的规则阵列以形成孔阵列并随后夹紧 具有盖电介质的孔阵列的顶部。 还描述了构建多层纳米柱状互连结构的方法和方法的变化。

公开(公告)号：US20130009315A1

公开(公告)日：2013-01-10

申请号：US11899842

申请日：2007-09-07

申请人： Matthew E. Colburn ,  Satya V. Nitta ,  Sampath Purushothaman ,  Charles Black ,  Kathryn Guarini

发明人： Matthew E. Colburn ,  Satya V. Nitta ,  Sampath Purushothaman ,  Charles Black ,  Kathryn Guarini

IPC分类号： H01L23/522 ,  H01L21/768

CPC分类号： H01L23/53295 ,  H01L21/7682 ,  H01L23/5222 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for forming an interconnect structure with nanocolumnar intermetal dielectric is described involving the construction of an interconnect structure using a solid dielectric, and introducing a regular array of vertically aligned nanoscale pores through stencil formation and etching to form a hole array and subsequently pinching off the tops of the hole array with a cap dielectric. Variations of the method and means to construct a multilevel nanocolumnar interconnect structure are also described.

摘要翻译： 描述了一种形成具有纳米柱状金属间电介质的互连结构的方法，涉及使用固体电介质构造互连结构，并通过模板形成和蚀刻引入垂直排列的纳米尺度孔的规则阵列以形成孔阵列并随后夹紧 具有盖电介质的孔阵列的顶部。 还描述了构建多层纳米柱状互连结构的方法和方法的变化。