公开(公告)号：US10269941B2

公开(公告)日：2019-04-23

申请号：US15953795

申请日：2018-04-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshinari Sasaki ,  Junichiro Sakata ,  Hiroki Ohara ,  Shunpei Yamazaki

IPC: H01L29/24 ,  H01L29/66 ,  H01L27/12 ,  H01L29/786 ,  H01L29/423

Abstract: It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another object to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device which includes a thin film transistor where a semiconductor layer having a channel formation region, a source region, and a drain region are formed using an oxide semiconductor layer, heat treatment (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor layer and reduce impurities such as moisture. Moreover, the oxide semiconductor layer subjected to the heat treatment is slowly cooled under an oxygen atmosphere.

公开(公告)号：US10141450B2

公开(公告)日：2018-11-27

申请号：US15242802

申请日：2016-08-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Akiharu Miyanaga ,  Junichiro Sakata ,  Masayuki Sakakura ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Shunpei Yamazaki

IPC: H01L29/12 ,  H01L29/786 ,  H01L27/12 ,  H01L29/45 ,  H01L29/423 ,  H01L29/49 ,  H01L27/32

Abstract: An object is to provide a thin film transistor having favorable electric characteristics and a semiconductor device including the thin film transistor as a switching element. The thin film transistor includes a gate electrode formed over an insulating surface, a gate insulating film over the gate electrode, an oxide semiconductor film which overlaps with the gate electrode over the gate insulating film and which includes a layer where the concentration of one or a plurality of metals contained in the oxide semiconductor is higher than that in other regions, a pair of metal oxide films formed over the oxide semiconductor film and in contact with the layer, and a source electrode and a drain electrode in contact with the metal oxide films. The metal oxide films are formed by oxidation of a metal contained in the source electrode and the drain electrode.

公开(公告)号：US10079307B2

公开(公告)日：2018-09-18

申请号：US14585953

申请日：2014-12-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo Akimoto ,  Junichiro Sakata ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L29/78618 ,  H01L27/1225 ,  H01L29/7869

Abstract: An object is to provide a method for manufacturing a highly reliable semiconductor device including thin film transistors which have stable electric characteristics and are formed using an oxide semiconductor. A method for manufacturing a semiconductor device includes the steps of: forming an oxide semiconductor film over a gate electrode with a gate insulating film interposed between the oxide semiconductor film and the gate electrode, over an insulating surface; forming a first conductive film including at least one of titanium, molybdenum, and tungsten, over the oxide semiconductor film; forming a second conductive film including a metal having lower electronegativity than hydrogen, over the first conductive film; forming a source electrode and a drain electrode by etching of the first conductive film and the second conductive film; and forming an insulating film in contact with the oxide semiconductor film, over the oxide semiconductor film, the source electrode, and the drain electrode.

公开(公告)号：US10002949B2

公开(公告)日：2018-06-19

申请号：US14489522

申请日：2014-09-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Suzunosuke Hiraishi ,  Kengo Akimoto ,  Junichiro Sakata

IPC: H01L21/02 ,  H01L29/66 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L29/66969 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/7869

Abstract: An object is, in a thin film transistor including an oxide semiconductor layer, to reduce contact resistance between the oxide semiconductor layer and source and drain electrode layers electrically connected to the oxide semiconductor layer. The source and drain electrode layers have a stacked-layer structure of two or more layers in which a layer in contact with the oxide semiconductor layer is formed using a metal whose work function is lower than the work function of the oxide semiconductor layer or an alloy containing such a metal. Layers other than the layer in contact with the oxide semiconductor layer of the source and drain electrode layers are formed using an element selected from Al, Cr, Cu, Ta, Ti, Mo, or W, an alloy containing any of these elements as a component, an alloy containing any of these elements in combination, or the like.

公开(公告)号：US09954007B2

公开(公告)日：2018-04-24

申请号：US15498940

申请日：2017-04-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Toshinari Sasaki ,  Junichiro Sakata ,  Masashi Tsubuku

IPC: H01L27/12 ,  H01L29/49 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/3248 ,  H01L27/3262 ,  H01L27/3265 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/45 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693

Abstract: It is an object to manufacture a highly reliable display device using a thin film transistor having favorable electric characteristics and high reliability as a switching element. In a bottom gate thin film transistor including an amorphous oxide semiconductor, an oxide conductive layer having a crystal region is formed between an oxide semiconductor layer which has been dehydrated or dehydrogenated by heat treatment and each of a source electrode layer and a drain electrode layer which are formed using a metal material. Accordingly, contact resistance between the oxide semiconductor layer and each of the source electrode layer and the drain electrode layer can be reduced; thus, a thin film transistor having favorable electric characteristics and a highly reliable display device using the thin film transistor can be provided.

公开(公告)号：US09831101B2

公开(公告)日：2017-11-28

申请号：US15149464

申请日：2016-05-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshinari Sasaki ,  Junichiro Sakata ,  Hiroki Ohara ,  Shunpei Yamazaki

IPC: H01L21/00 ,  H01L21/477 ,  H01L21/02 ,  H01L21/383 ,  H01L21/46 ,  H01L29/66 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L21/477 ,  H01L21/02565 ,  H01L21/02664 ,  H01L21/383 ,  H01L21/46 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

Abstract: An object is to manufacture a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, heat treatment (for dehydration or dehydrogenation) is performed to improve the purity of the oxide semiconductor film and reduce impurities including moisture or the like. After that, slow cooling is performed under an oxygen atmosphere. Besides impurities including moisture or the like exiting in the oxide semiconductor film, heat treatment causes reduction of impurities including moisture or the like exiting in a gate insulating layer and those in interfaces between the oxide semiconductor film and films which are provided over and below the oxide semiconductor and in contact therewith.

公开(公告)号：US09741779B2

公开(公告)日：2017-08-22

申请号：US15161363

申请日：2016-05-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroki Ohara ,  Hideaki Kuwabara

IPC: H01L29/00 ,  H01L27/00 ,  H01L27/32 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  G06F1/16 ,  H01L29/04 ,  H01L29/24 ,  H04B1/16 ,  H01L21/02

CPC classification number: H01L27/3262 ,  G06F1/163 ,  H01L21/02614 ,  H01L27/1218 ,  H01L27/1222 ,  H01L27/1225 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/7869 ,  H01L29/78696 ,  H04B1/16

Abstract: One object is to provide a semiconductor device with a structure which enables reduction in parasitic capacitance sufficiently between wirings. In a bottom-gate type thin film transistor including a stacked layer of a first layer which is a metal thin film oxidized partly or entirely and an oxide semiconductor layer, the following oxide insulating layers are formed together: an oxide insulating layer serving as a channel protective layer which is over and in contact with a part of the oxide semiconductor layer overlapping with a gate electrode layer; and an oxide insulating layer which covers a peripheral portion and a side surface of the stacked oxide semiconductor layer.

公开(公告)号：US09601601B2

公开(公告)日：2017-03-21

申请号：US14454126

申请日：2014-08-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichiro Sakata

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/66 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L29/66969 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02664 ,  H01L22/12 ,  H01L27/1225 ,  H01L29/7869

Abstract: A hydrogen barrier layer is selectively provided over an oxide semiconductor layer including hydrogen and hydrogen is selectively desorbed from a given region in the oxide semiconductor layer by conducting oxidation treatment, so that regions with different conductivities are formed in the oxide semiconductor layer. After that, a channel formation region, a source region, and a drain region can be formed with the use of the regions with different conductivities formed in the oxide semiconductor layer.

公开(公告)号：US09530806B2

公开(公告)日：2016-12-27

申请号：US14521710

申请日：2014-10-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masashi Tsubuku ,  Shuhei Yoshitomi ,  Takahiro Tsuji ,  Miyuki Hosoba ,  Junichiro Sakata ,  Hiroyuki Tomatsu ,  Masahiko Hayakawa

IPC: H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L27/1262 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02595 ,  H01L21/02631 ,  H01L21/02667 ,  H01L27/1248 ,  H01L27/127 ,  H01L29/66765 ,  H01L29/66969 ,  H01L29/7869

Abstract: It is an object to provide a manufacturing method of a structure of a thin film transistor including an oxide semiconductor film, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible. A protective insulating layer is formed to cover a thin film transistor including an oxide semiconductor layer that is dehydrated or dehydrogenated by first heat treatment, and second heat treatment at a temperature that is lower than that of the first heat treatment, in which the increase and decrease in temperature are repeated plural times, is performed, whereby a thin film transistor including an oxide semiconductor layer, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible without depending on the channel length, can be manufactured.

公开(公告)号：US09515192B2

公开(公告)日：2016-12-06

申请号：US14848492

申请日：2015-09-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Miyuki Hosoba ,  Junichiro Sakata ,  Hideaki Kuwabara

IPC: H01L27/00 ,  H01L29/00 ,  G02F1/00 ,  H01L29/786 ,  G02F1/1362 ,  H01L27/12 ,  H01L29/66 ,  H01L29/45 ,  H01L29/51 ,  G02F1/167 ,  G02F1/136 ,  H01L27/32

CPC classification number: H01L29/78606 ,  G02F1/1339 ,  G02F1/134336 ,  G02F1/1345 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F1/167 ,  G02F2001/13606 ,  G02F2201/123 ,  G09G3/344 ,  G09G3/3677 ,  G09G2300/0426 ,  G09G2310/0286 ,  G09G2310/08 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/1274 ,  H01L27/3262 ,  H01L29/45 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: An object is to provide a semiconductor device having a structure in which parasitic capacitance between wirings can be efficiently reduced. In a bottom gate thin film transistor using an oxide semiconductor layer, an oxide insulating layer used as a channel protection layer is formed above and in contact with part of the oxide semiconductor layer overlapping with a gate electrode layer, and at the same time an oxide insulating layer covering a peripheral portion (including a side surface) of the stacked oxide semiconductor layer is formed. Further, a source electrode layer and a drain electrode layer are formed in a manner such that they do not overlap with the channel protection layer. Thus, a structure in which an insulating layer over the source electrode layer and the drain electrode layer is in contact with the oxide semiconductor layer is provided.