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    SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREOF, CAMERA, AND ELECTRONIC DEVICE
    102.
    发明申请
    SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREOF, CAMERA, AND ELECTRONIC DEVICE 有权
    固态成像装置，其制造方法，相机和电子装置

    公开(公告)号：US20150041871A1

    公开(公告)日：2015-02-12

    申请号：US14492335

    申请日：2014-09-22

    Applicant: Sony Corporation

    Inventor： Yorito Sakano ,  Takashi Abe ,  Keiji Mabuchi ,  Ryoji Suzuki ,  Hiroyuki Mori ,  Yoshiharu Kudoh ,  Fumihiko Koga ,  Takeshi Yanagita ,  Kazunobu Ota

    IPC: H01L27/146

    CPC classification number: H04N5/361 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14689 ,  H04N5/2176 ,  H04N5/374 ,  H04N5/37457 ,  H04N5/378

    Abstract: A solid-state imaging device is provided, which includes a photodiode having a first conductivity type semiconductor area that is dividedly formed for each pixel; a first conductivity type transfer gate electrode formed on the semiconductor substrate via a gate insulating layer in an area neighboring the photodiode, and transmitting signal charges generated and accumulated in the photodiode; a signal reading unit reading a voltage which corresponds to the signal charge or the signal charge; and an inversion layer induction electrode formed on the semiconductor substrate via the gate insulating layer in an area covering a portion or the whole of the photodiode, and composed of a conductor or a semiconductor having a work function. An inversion layer is induced, which is formed by accumulating a second conductivity type carrier on a surface of the inversion layer induction electrode side of the semiconductor area through the inversion layer induction electrode.

    Abstract translation: 提供了一种固态成像装置，其包括：光电二极管，其具有为每个像素分割形成的第一导电类型半导体区域; 在与所述光电二极管相邻的区域经由栅极绝缘层在所述半导体衬底上形成的第一导电型转移栅电极，以及发射并累积在所述光电二极管中的信号电荷; 读取对应于信号电荷或信号电荷的电压的信号读取单元; 以及反射层感应电极，其在覆盖所述光电二极管的一部分或全部的区域中，经由所述栅极绝缘层在所述半导体衬底上形成，并且由具有功函数的导体或半导体构成。 通过反转层感应电极在半导体区域的反型层感应电极侧的表面上积累第二导电型载体而形成反转层。

    Solid-state image pickup device and signal processing method therefor
    103.
    发明授权
    Solid-state image pickup device and signal processing method therefor 有权
    固态摄像装置及其信号处理方法

    公开(公告)号：US08896738B2

    公开(公告)日：2014-11-25

    申请号：US14054207

    申请日：2013-10-15

    Applicant: Sony Corporation

    Inventor： Hiroki Sato ,  Keiji Mabuchi ,  Nobuo Nakamura ,  Tetsuya Iizuka

    IPC: H04N5/228 ,  H04N3/12 ,  H04N9/083 ,  H04N3/14 ,  H04N5/335 ,  H04N9/04 ,  H03M1/12

    CPC classification number: H04N5/335

    Abstract: The device includes an pixel array part having a plurality of unit pixels, a CDS (correlated double sampling) circuit, and an A/D converter. A pixel signal read from a pixel array part via a signal line is subjected to CDS processing (noise elimination processing) in the CDS circuit, and then this pixel signal is inputted into the A/D converter which performs A/D conversion on the pixel signal. The A/D converter includes a ΔΣ modulator and a digital filter to perform highly accurate A/D conversion. The invention can also be applied to a construction in which an A/D converter is provided at the front stage of the CDS circuit.

    Abstract translation: 该装置包括具有多个单位像素的像素阵列部分，CDS（相关双采样）电路和A / D转换器。 经由信号线从像素阵列部分读取的像素信号在CDS电路中进行CDS处理（噪声消除处理），然后将该像素信号输入到对像素进行A / D转换的A / D转换器 信号。 A / D转换器包括＆Dgr＆amp; 调制器和数字滤波器，以执行高精度的A / D转换。 本发明也可以应用于在CDS电路的前级设置A / D转换器的结构。

    SOLID STATE IMAGING DEVICE AND CAMERA SYSTEM
    106.
    发明申请
    SOLID STATE IMAGING DEVICE AND CAMERA SYSTEM 审中-公开
    固态成像装置和摄像机系统

    公开(公告)号：US20140022428A1

    公开(公告)日：2014-01-23

    申请号：US14035667

    申请日：2013-09-24

    Applicant: Sony Corporation

    Inventor： Tetsuo Nomoto ,  Eiji Makino ,  Keiji Mabuchi

    IPC: H01L27/146 ,  H04N5/217

    CPC classification number: H01L27/14643 ,  H01L27/14612 ,  H01L27/14638 ,  H04N3/155 ,  H04N5/2173 ,  H04N5/335 ,  H04N5/357 ,  H04N5/3658 ,  H04N5/374 ,  H04N5/3765 ,  H04N5/378

    Abstract: An MOS type solid state imaging device in which unit pixels 10 each having a photodiode 11, a transfer transistor 12 for transferring the signal of the photodiode 11 to a floating node N11, an amplifier transistor 13 for outputting the signal of the floating node N11 to a vertical signal line 22, and a reset transistor 14 for resetting the floating node N11 are arrayed in a matrix and in which a gate voltage of the reset transistor 14 is controlled by three values of a power source potential (for example 3V), a ground potential (0V), and a negative power source potential (for example −1V).

    Abstract translation: 一种MOS型固态成像装置，其中具有光电二极管11的单位像素10，用于将光电二极管11的信号传送到浮动节点N11的转移晶体管12，用于将浮动节点N11的信号输出到 垂直信号线22和用于复位浮动节点N11的复位晶体管14被排列成矩阵，并且其中复位晶体管14的栅极电压由电源电位（例如3V）的三个值控制， 接地电位（0V）和负电源电位（例如-1V）。

    SOLID-STATE IMAGE CAPTURING DEVICE, METHOD OF DRIVING SOLID-STATE IMAGE CAPTURING DEVICE, AND IMAGE CAPTURING APPARATUS
    107.
    发明申请
    SOLID-STATE IMAGE CAPTURING DEVICE, METHOD OF DRIVING SOLID-STATE IMAGE CAPTURING DEVICE, AND IMAGE CAPTURING APPARATUS 有权
    固态图像捕获装置，驱动固态图像捕获装置的方法和图像捕获装置

    公开(公告)号：US20130342728A1

    公开(公告)日：2013-12-26

    申请号：US14011402

    申请日：2013-08-27

    Applicant: Sony Corporation

    Inventor： Keiji Mabuchi ,  Takeshi Yanagita ,  Yortio Sakano

    IPC: H04N5/235

    CPC classification number: H04N5/2353 ,  H01L27/14656 ,  H04N5/3591

    Abstract: A solid-state image capturing device includes: a pixel array unit including plural pixels each converting light selectively incident through a mechanical shutter into charges to be stored in a storage portion and having an overflow path through which charges exceeding a saturation charge amount are discharged; and a driving unit starting an exposure by simultaneously resetting all pixels of the pixel array unit, maintaining the overflow path in an opened state during the exposure period, and closing the overflow path during a period while signals are read from the pixels after ending the exposure by closing the mechanical shutter.

    Abstract translation: 固态图像捕获装置包括：像素阵列单元，包括多个像素，每个像素将通过机械遮光器有选择地入射的光转换成要存储在存储部分中的电荷，并且具有溢出路径，电荷超过饱和电荷量的电荷被放电; 以及驱动单元，通过同时复位像素阵列单元的所有像素来开始曝光，在曝光周期期间将溢出路径保持在打开状态，并且在结束曝光之后从像素读取信号期间关闭溢出路径 通过关闭机械快门。

    AMPLIFYING CIRCUIT AND MANUFACTURING METHOD, SOLID-STATE IMAGING ELEMENT, AND ELECTRONIC DEVICE
    109.
    发明申请
    AMPLIFYING CIRCUIT AND MANUFACTURING METHOD, SOLID-STATE IMAGING ELEMENT, AND ELECTRONIC DEVICE 审中-公开
    放大电路和制造方法，固态成像元件和电子器件

    公开(公告)号：US20130140442A1

    公开(公告)日：2013-06-06

    申请号：US13671167

    申请日：2012-11-07

    Applicant: Sony Corporation

    Inventor： Takeshi Yanagita ,  Keiji Mabuchi ,  Toru Shirakata ,  Takashi Abe ,  Takafumi Morikawa

    IPC: H01L31/08 ,  H05K13/00 ,  H03F3/16

    CPC classification number: H01L31/08 ,  H01L27/14614 ,  H03F3/082 ,  H03F3/16 ,  H05K13/00 ,  Y10T29/49147

    Abstract: Disclosed herein is a solid-state imaging element including: a photoelectric conversion section configured to generate a charge according to received light; and a plurality of active elements configured to perform predetermined operation on the charge generated in the photoelectric conversion section, wherein a part of a gate electrode possessed by one of the active elements has a projection part buried in a substrate in which the photoelectric conversion section is formed. Thus, it is possible to suppress the occurrence of noise, and provide excellent image quality with a smaller area.

    Abstract translation: 本文公开了一种固态成像元件，包括：光电转换部，被配置为根据接收的光产生电荷; 以及多个有源元件，被配置为对所述光电转换部中产生的电荷执行预定的操作，其中，所述有源元件中的一个具有的栅电极的一部分具有掩埋在所述光电转换部为 形成。 因此，可以抑制噪声的发生，并且以较小的面积提供优异的图像质量。

    Solid-state imaging device, production method of the same, and imaging apparatus
    110.
    发明授权
    Solid-state imaging device, production method of the same, and imaging apparatus 有权

    公开(公告)号：US10685996B2

    公开(公告)日：2020-06-16

    申请号：US16398854

    申请日：2019-04-30

    Applicant: Sony Corporation

    Inventor： Keiji Mabuchi

    IPC: H04N3/14 ,  H04N5/335 ,  H01L27/146 ,  H04N5/369 ,  H04N5/3745 ,  H04N5/357 ,  H04N9/04 ,  H04N5/378 ,  H01L31/0352

    Abstract: A solid-state imaging device in which a pixel circuit formed on the first surface side of a semiconductor substrate is shared by a plurality of light reception regions and second surface side of the semiconductor substrate is the light incident side of the light reception regions. The second surface side regions of the light reception regions are arranged at approximately even intervals and the first surface side regions of the light reception regions e are arranged at uneven intervals. Respective second surface side regions and first surface side regions are joined in the semiconductor substrate so that the light reception regions extend from the second surface side to the first surface side of the semiconductor substrate.

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