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    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    102.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
    半导体器件及制造半导体器件的方法

    公开(公告)号：US20160181434A1

    公开(公告)日：2016-06-23

    申请号：US15056286

    申请日：2016-02-29

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Masahiro TAKAHASHI ,  Tetsunori MARUYAMA

    IPC: H01L29/786 ,  H01L29/04 ,  H01L29/423 ,  H01L29/24

    CPC classification number: H01L29/06 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0259 ,  H01L29/36 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

    Abstract: A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. An oxide semiconductor film which can have a first crystal structure by heat treatment and an oxide semiconductor film which can have a second crystal structure by heat treatment are formed so as to be stacked, and then heat treatment is performed; accordingly, crystal growth occurs with the use of an oxide semiconductor film having the second crystal structure as a seed, so that an oxide semiconductor film having the first crystal structure is formed. An oxide semiconductor film formed in this manner is used for an active layer of the transistor.

    Abstract translation: 通过向其中使用氧化物半导体膜的通道的晶体管提供稳定的电特性来制造高度可靠的半导体器件。 通过热处理可以具有第一晶体结构的氧化物半导体膜和通过热处理可以具有第二晶体结构的氧化物半导体膜被形成为堆叠，然后进行热处理; 因此，通过使用具有第二晶体结构的氧化物半导体膜作为种子发生晶体生长，从而形成具有第一晶体结构的氧化物半导体膜。 以这种方式形成的氧化物半导体膜用于晶体管的有源层。

    SEMICONDUCTOR DEVICE
    104.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20150041801A1

    公开(公告)日：2015-02-12

    申请号：US14447875

    申请日：2014-07-31

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Takuya HIROHASHI ,  Masahiro TAKAHASHI ,  Motoki NAKASHIMA ,  Ryosuke WATANABE ,  Masashi TSUBUKU

    IPC: H01L29/792 ,  H01L29/24

    CPC classification number: H01L29/792 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/66969 ,  H01L29/7869

    Abstract: A semiconductor device includes a semiconductor layer, a gate electrode overlapping with the semiconductor layer, a first gate insulating layer between the semiconductor layer and the gate electrode, and a second gate insulating layer between the first gate insulating layer and the gate electrode. The first gate insulating layer includes an oxide in which the nitrogen content is lower than or equal to 5 at. %, and the second gate insulating layer includes charge trap states.

    Abstract translation: 半导体器件包括半导体层，与半导体层重叠的栅极电极，在半导体层和栅电极之间的第一栅极绝缘层，以及位于第一栅极绝缘层和栅电极之间的第二栅极绝缘层。 第一栅极绝缘层包括其中氮含量低于或等于5at的氧化物。 ％，第二栅极绝缘层包括电荷陷阱状态。

    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    105.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
    制造半导体器件的方法

    公开(公告)号：US20140193946A1

    公开(公告)日：2014-07-10

    申请号：US14202670

    申请日：2014-03-10

    Applicant: Semiconductor Energy Laboratory Co, Ltd.

    Inventor： Shunpei YAMAZAKI ,  Takuya HIROHASHI ,  Masahiro TAKAHASHI ,  Takashi SHIMAZU

    IPC: H01L29/66

    CPC classification number: H01L29/66742 ,  H01L21/02422 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02502 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02667 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/7869

    Abstract: A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of crystallinity, whereby a large-sized display device, a high-performance semiconductor device, or the like can be put into practical use. A first multi-component oxide semiconductor layer is formed over a substrate and a single-component oxide semiconductor layer is formed thereover; then, crystal growth is carried out from a surface to an inside by performing heat treatment at 500° C. to 1000° C. inclusive, preferably 550° C. to 750° C. inclusive so that a first multi-component oxide semiconductor layer including single crystal regions and a single-component oxide semiconductor layer including single crystal regions are formed; and a second multi-component oxide semiconductor layer including single crystal regions is stacked over the single-component oxide semiconductor layer including single crystal regions.

    Abstract translation: 可以使用较大的衬底，并且可以通过形成具有高结晶度的氧化物半导体层来制造具有期望的高场敏性迁移率的晶体管，由此大尺寸显示装置，高性能半导体器件， 等可以投入实际使用。 在衬底上形成第一多组分氧化物半导体层，并在其上形成单组分氧化物半导体层; 然后通过在500℃至1000℃（包括端值）进行热处理从表面向内部进行晶体生长，优选550℃至750℃，从而使第一多组分氧化物半导体层 包括单晶区域和形成包括单晶区域的单组分氧化物半导体层; 并且包括单晶区域的第二多分量氧化物半导体层堆叠在包括单晶区域的单组分氧化物半导体层上。

    OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE
    106.
    发明申请
    OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE 有权
    氧化物半导体膜和半导体器件

    公开(公告)号：US20130214273A1

    公开(公告)日：2013-08-22

    申请号：US13832479

    申请日：2013-03-15

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Shunpei YAMAZAKI ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Hiroki OHARA ,  Tatsuya HONDA ,  Takatsugu OMATA ,  Yusuke NONAKA ,  Masahiro TAKAHASHI ,  Akiharu MIYANAGA

    IPC: H01L29/04

    CPC classification number: H01L29/78696 ,  H01L29/045 ,  H01L29/1033 ,  H01L29/247 ,  H01L29/7869 ,  H01L29/78693

    Abstract: An oxide semiconductor film which has more stable electric conductivity is provided. Further, a semiconductor device which has stable electric characteristics and high reliability is provided by using the oxide semiconductor film. An oxide semiconductor film includes a crystalline region, and the crystalline region includes a crystal in which an a-b plane is substantially parallel with a surface of the film and a c-axis is substantially perpendicular to the surface of the film; the oxide semiconductor film has stable electric conductivity and is more electrically stable with respect to irradiation with visible light, ultraviolet light, and the like. By using such an oxide semiconductor film for a transistor, a highly reliable semiconductor device having stable electric characteristics can be provided.

    Abstract translation: 提供了具有更稳定的导电性的氧化物半导体膜。 此外，通过使用氧化物半导体膜提供具有稳定的电特性和高可靠性的半导体器件。 氧化物半导体膜包括结晶区域，并且结晶区域包括其中a-b平面基本上平行于膜的表面并且c轴基本上垂直于膜的表面的晶体; 氧化物半导体膜具有稳定的导电性，并且相对于可见光，紫外线等的照射而言更加电稳定。 通过使用这种用于晶体管的氧化物半导体膜，可以提供具有稳定电特性的高可靠性半导体器件。

    SEMICONDUCTOR DEVICE AND STORAGE DEVICE
    108.
    发明申请
    SEMICONDUCTOR DEVICE AND STORAGE DEVICE 有权

    公开(公告)号：US20250040193A1

    公开(公告)日：2025-01-30

    申请号：US18716572

    申请日：2022-11-28

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Hitoshi KUNITAKE ,  Satoru SAITO ,  Masahiro TAKAHASHI ,  Naoki OKUNO ,  Masashi OOTA

    IPC: H01L29/786 ,  H01L21/324 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/792 ,  H10B12/00 ,  H10B43/20 ,  H10B80/00

    Abstract: A semiconductor device with a high on-state current is provided. A transistor included in the semiconductor device includes a first insulator; a first semiconductor layer over the first insulator; a second semiconductor layer including a channel formation region over the first semiconductor layer; a first conductor and a second conductor over the second semiconductor layer; a second insulator over the second semiconductor layer and between the first conductor and the second conductor; and a third conductor over the second insulator. In a cross-sectional view in a channel width direction of the transistor, the third conductor covers a side surface and a top surface of the second semiconductor layer. The second semiconductor layer has a higher permittivity than the first semiconductor layer. In the cross-sectional view in the channel width direction of the transistor, a length of an interface between the first semiconductor layer and the second semiconductor layer is greater than or equal to 1 nm and less than or equal to 20 nm, and a length from a bottom surface of the second semiconductor layer to a bottom surface of the third conductor in a region not overlapping with the second semiconductor layer is larger than a thickness of the second semiconductor layer.

    POSITIVE ELECTRODE ACTIVE MATERIAL PARTICLE
    109.
    发明公开
    POSITIVE ELECTRODE ACTIVE MATERIAL PARTICLE 审中-公开

    公开(公告)号：US20240266502A1

    公开(公告)日：2024-08-08

    申请号：US18442424

    申请日：2024-02-15

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Masahiro TAKAHASHI ,  Teruaki OCHIAI ,  Yohei MOMMA ,  Ayae TSURUTA

    IPC: H01M4/36 ,  H01M4/02 ,  H01M4/505 ,  H01M4/525

    CPC classification number: H01M4/364 ,  H01M4/505 ,  H01M4/525 ,  H01M2004/028

    Abstract: A positive electrode active material particle with little deterioration is provided. A power storage device with little deterioration is provided. A highly safe power storage device is provided. The positive electrode active material particle includes a first crystal grain, a second crystal grain, and a crystal grain boundary positioned between the crystal grain and the second crystal grain; the first crystal grain and the second crystal grain include lithium, a transition metal, and oxygen; the crystal grain boundary includes magnesium and oxygen; and the positive electrode active material particle includes a region where the ratio of the atomic concentration of magnesium in the crystal grain boundary to the atomic concentration of the transition metal in first crystal grain and the second crystal grain is greater than or equal to 0.010 and less than or equal to 0.50.

    FERROELECTRIC DEVICE AND SEMICONDUCTOR DEVICE
    110.
    发明公开
    FERROELECTRIC DEVICE AND SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20230380180A1

    公开(公告)日：2023-11-23

    申请号：US18030334

    申请日：2021-10-12

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Tomonori NAKAYAMA ,  Masahiro TAKAHASHI ,  Hitoshi KUNITAKE

    IPC: H10B53/30

    CPC classification number: H10B53/30

    Abstract: A ferroelectric device (100) that includes a metal nitride film (130) with favorable ferroelectricity is provided. The ferroelectric device comprises a first conductor (110), a metal nitride film over the first conductor, a second conductor (120) over the metal nitride film, a first insulator (155) over the second conductor, and a second insulator (152) over the first insulator. The first insulator includes regions in contact with the side surface of the metal nitride film and the side surface and the top surface of the second conductor; the metal nitride film has ferroelectricity; the metal nitride film contains a first element, a second element, and nitrogen; the first element is one or more elements selected from Group 13 elements; the second element is one or more elements selected from Group 2 elements to Group 6 elements and Group 13 elements other than the first element; the first conductor and the second conductor each contain nitrogen; the first insulator contains aluminum and oxygen; and the second insulator contains silicon and nitrogen.

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