利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

776 条记录 (耗时 0.08 秒)

    Trick action type clock
    101.
    发明授权
    Trick action type clock 有权
    伎俩行动型时钟

    公开(公告)号：US06229768B1

    公开(公告)日：2001-05-08

    申请号：US09238414

    申请日：1999-01-28

    申请人： Hiroyuki Nakazawa ,  Hiroshi Ito

    发明人： Hiroyuki Nakazawa ,  Hiroshi Ito

    IPC分类号： G04B1900

    CPC分类号： G04B19/065 ,  G04B45/0007

    摘要： A trick action type clock, wherein a dial plate which is arranged in front of ornaments is made of left and right side dial plates mating along a line passing through a center of rotation of the hands. A planetary gear mechanism actuates the left and right side dial plates so as to make them rotate and revolve around the center of rotation of the hands to produce an opening and closing motion. Therefore, the dial plate made of the two mating parts performs an opening and closing motion which produces a strong impression due to the surprising dynamic change.

    摘要翻译： 一种特技动作式时钟，其中布置在装饰品前面的表盘由沿着通过手的旋转中心的线配合的左右侧拨盘形成。 行星齿轮机构致动左右侧拨盘，使其围绕手的旋转中心旋转并旋转以产生打开和关闭运动。 因此，由两个配合部件制成的表盘由于令人惊奇的动态变化而进行打开和关闭运动，产生强烈的印象。

    Read/write device
    104.
    发明授权
    Read/write device 失效
    读/写设备

    公开(公告)号：US06169644A

    公开(公告)日：2001-01-02

    申请号：US09312706

    申请日：1999-05-17

    申请人： Hiroshi Ito ,  Satoru Akutsu ,  Yusuke Yamaoka ,  Nobuaki Miyake ,  Masakatsu Sato

    发明人： Hiroshi Ito ,  Satoru Akutsu ,  Yusuke Yamaoka ,  Nobuaki Miyake ,  Masakatsu Sato

    IPC分类号： G11B555

    CPC分类号： H02K3/18 ,  G11B21/083 ,  H02K1/146 ,  H02K5/225 ,  H02K5/26 ,  H02K7/06 ,  H02K15/095 ,  H02K37/14

    摘要： There is described a read/write device which enables realization of miniaturization, a reduction in weight, improvement in the accuracy of step feed, and reliability. The read/write device includes heads, a carriage, a stepper motor for moving the carriage stepwise, and a medium drive motor for spinning a recording medium. The stepper motor further includes a rotor, a first stator which is formed from multilayer magnetic material and is fixedly positioned so as to surround the rotor, a second stator formed in substantially the same way as the first stator, and a holder for housing the first and second stators.

    摘要翻译： 描述了一种能够实现小型化，减轻重量，提高步进进给精度和可靠性的读/写装置。 读/写装置包括头部，滑架，用于逐步移动滑架的步进电机，以及用于旋转记录介质的介质驱动电机。 步进电动机还包括转子，第一定子由多层磁性材料形成并且被固定地定位成围绕转子，以与第一定子基本相同的方式形成的第二定子和用于容纳第一定子的保持器 和第二个定子。

    Method for making MIS transistor
    105.
    发明授权
    Method for making MIS transistor 失效
    制造MIS晶体管的方法

    公开(公告)号：US6162710A

    公开(公告)日：2000-12-19

    申请号：US92649

    申请日：1998-06-09

    申请人： Hiroshi Ito ,  Tadahiko Horiuchi

    发明人： Hiroshi Ito ,  Tadahiko Horiuchi

    IPC分类号： H01L21/265 ,  H01L21/336 ,  H01L29/08 ,  H01L29/78

    CPC分类号： H01L21/26506 ,  H01L29/0847 ,  H01L29/66575 ,  H01L29/6659 ,  H01L29/7833

    摘要： Disclosed is a method for making a MIS transistor that a gate electrode and gate insulating film are formed on a semiconductor substrate with a channel region formed implanting an impurity of one conductivity type thereinto, which has the steps of: implanting hydrogen ions through said gate electrode and gate insulating film into said channel region under said gate electrode; ion-implanting an impurity of a conductivity type reverse to said one conductivity type self-aligned to said gate electrode to form a source/drain region; and conducting thermal treatment in an inert atmosphere or nitrogen atmosphere.

    摘要翻译： 公开了一种用于制造MIS晶体管的方法，其中栅极电极和栅极绝缘膜形成在半导体衬底上，其中形成有一种导电类型的杂质的沟道区域，其具有以下步骤：将氢离子注入所述栅电极 和栅极绝缘膜进入所述栅电极下面的所述沟道区; 离子注入与所述栅电极自对准的所述一种导电类型相反的导电类型的杂质以形成源极/漏极区; 并在惰性气氛或氮气气氛中进行热处理。

    Optical branching devices
    107.
    发明授权
    Optical branching devices 失效
    光分路器

    公开(公告)号：US6081639A

    公开(公告)日：2000-06-27

    申请号：US907618

    申请日：1997-08-08

    申请人： Manabu Kagami ,  Kazuo Hasegawa ,  Hiroshi Ito

    发明人： Manabu Kagami ,  Kazuo Hasegawa ,  Hiroshi Ito

    IPC分类号： G02B6/122 ,  G02B6/12 ,  G02B6/125 ,  G02B6/26

    CPC分类号： G02B6/125 ,  G02B2006/12119 ,  G02B2006/12195

    摘要： An optical branching device includes a main waveguide and a branching waveguide. A portion of the main waveguide is bent and the branching waveguide is placed close to the bent part of the main waveguide. The branching waveguide has a taper structure such that a width of the branching waveguide is gradually decreased in a propagation direction of light. A central axis of the branching waveguide is tilted from a line extended from a straight part of the main waveguide toward the direction X, or the bending direction of the main waveguide. An input end of the branching waveguide has a normal vector tilted from the central axis of the branching waveguide toward the direction Y, an opposite direction of the bending direction of the main waveguide. With above-mentioned structures, light radiated from the bent part of the main waveguide can be launched into the input end of the branching waveguide and transmitted through the branching waveguide efficiently.

    摘要翻译： 光分路装置包括主波导和分支波导。 主波导的一部分被弯曲，并且分支波导放置成靠近主波导的弯曲部分。 分支波导具有锥形结构，使得分支波导的宽度在光的传播方向上逐渐减小。 分支波导的中心轴线从主波导的直线部分向X方向或主波导的弯曲方向倾斜。 分支波导的输入端具有从分支波导的中心轴朝向Y方向倾斜的法线向量，与主波导的弯曲方向相反。 利用上述结构，从主波导的弯曲部辐射的光可以发射到分支波导的输入端并有效地透过分支波导。

    Electron emission device and display using the same
    109.
    发明授权
    Electron emission device and display using the same 失效
    电子发射装置和显示器使用相同

    公开(公告)号：US6023125A

    公开(公告)日：2000-02-08

    申请号：US36747

    申请日：1998-03-09

    申请人： Takamasa Yoshikawa ,  Kiyohide Ogasawara ,  Hiroshi Ito

    发明人： Takamasa Yoshikawa ,  Kiyohide Ogasawara ,  Hiroshi Ito

    IPC分类号： H01J1/312 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12 ,  H01L33/00 ,  H01J1/30

    CPC分类号： B82Y10/00 ,  H01J1/312 ,  H01J2329/00

    摘要： An electron emission device exhibits a high electron emission efficiency. The device comprises an electron supply layer of metal or semiconductor, an insulator layer formed on the electron supply layer, and a thin-film metal electrode formed on the insulator layer. The electron emission device emits electrons when an electric field is applied between the electron supply layer and the thin-film metal electrode. The insulator layer is a dielectric layer having a thickness of 50 nanometers or more, and formed by a vacuum evaporation process with a layer forming rate of 0.5 to 100 nanometers/minute.

    摘要翻译： 电子发射装置表现出高电子发射效率。 该装置包括金属或半导体的电子供应层，形成在电子供应层上的绝缘体层和形成在绝缘体层上的薄膜金属电极。 当在电子供给层和薄膜金属电极之间施加电场时，电子发射装置发射电子。 绝缘体层是厚度为50纳米以上的电介质层，通过真空蒸镀法形成，层数为0.5〜100纳米/分钟。