Cold cathode element
    102.
    发明授权
    Cold cathode element 有权
    冷阴极元件

    公开(公告)号:US06268686B1

    公开(公告)日:2001-07-31

    申请号:US09237844

    申请日:1999-01-27

    CPC classification number: H01J1/304 H01J2201/30457

    Abstract: A cold cathode element for emitting an electron on application of an electric field. The element includes a diamond carbon film having a half width Hw of a photoelectron spectrum of a C1S electron using an X-ray photoelectron spectroscopy, of 1.72 eV or more. The cold cathode element has the function of sufficiently emitting electrons even by applying a low voltage, and thus the element has high practical utility.

    Abstract translation: 用于在施加电场时发射电子的冷阴极元件。 该元件包括具有1.72eV以上的具有C1S电子的光电子光谱的半峰宽度Hw的金刚石碳膜,其使用X射线光电子能谱。 冷阴极元件具有通过施加低电压而充分发射电子的功能,因此该元件具有很高的实用性。

    Compact field emission electron gun and focus lens
    103.
    发明授权
    Compact field emission electron gun and focus lens 有权
    紧凑型场发射电子枪和聚焦透镜

    公开(公告)号:US06255768B1

    公开(公告)日:2001-07-03

    申请号:US09356851

    申请日:1999-07-19

    CPC classification number: H01J29/04 H01J3/022 H01J2201/30457

    Abstract: A source of a focused electron beam is provided for use in a cathode ray tube (CRT) or vacuum microelectronic device. A carbon-based field emission cathode, extraction gate and focus lens are formed as an integrated structure using fabrication techniques that are used to form integrated circuits. An external focus lens is used to confine the beamlets from a large number of carbon-based surfaces. A convergence cup accelerates the beam toward a drift space and finally to a screen on a CRT or other device. The source may be much more compact than present CRT electron optics apparatus.

    Abstract translation: 提供聚焦电子束的源用于阴极射线管(CRT)或真空微电子器件。 使用用于形成集成电路的制造技术,形成碳基场致发射阴极,提取栅极和聚焦透镜作为集成结构。 外部聚焦透镜用于限制来自大量碳基表面的子束。 汇聚杯将波束加速到漂移空间,最后加速到CRT或其他设备上的屏幕。 该源可能比当前的CRT电子光学装置更紧凑。

    Image-forming apparatus with correction in accordance with positional
deviations between electron-emitting devices and image-forming members
    104.
    发明授权
    Image-forming apparatus with correction in accordance with positional deviations between electron-emitting devices and image-forming members 失效
    根据电子发射器件和图像形成部件之间的位置偏差进行校正的图像形成装置

    公开(公告)号:US6121942A

    公开(公告)日:2000-09-19

    申请号:US359838

    申请日:1994-12-20

    Abstract: In an image-forming apparatus which includes, on a substrate, an electron beam source comprises plurality of electron-emitting devices, and image-forming members for forming an image upon irradiation of electron beams emitted from the electron-emitting devices, the image-forming members are stripe-shaped members, and the plurality of electron-emitting devices each comprise a negative electrode, an electron-emitting region and a positive electrode which are arranged on the substrate surface side by side in a direction vertical to the direction in which the stripe-shaped members are extending. With the present apparatus, deterioration of image quality is prevented even when the positional relationship between the electron-emitting devices such as cold cathode devices and the image-forming members such as fluorescent substances is deviated from predetermined one during assembly.

    Abstract translation: 在包括在基板上的电子束源包括多个电子发射器件和用于在从电子发射器件发射的电子束照射时形成图像的图像形成部件的图像形成装置中, 形成构件是条形构件,并且多个电子发射器件各自包括负极,电子发射区和正极,它们沿垂直于其方向的方向并排配置在衬底表面上 条状构件正在延伸。 利用本发明的装置,即使当在组装期间诸如冷阴极器件的电子发射器件和诸如荧光物质的图像形成部件之间的位置关系偏离预定的装置时,也防止了图像质量的劣化。

    Manufacturing method of a diamond emitter vacuum micro device
    105.
    发明授权
    Manufacturing method of a diamond emitter vacuum micro device 失效
    金刚石发射体真空微器件的制造方法

    公开(公告)号:US06103133A

    公开(公告)日:2000-08-15

    申请号:US42738

    申请日:1998-03-17

    CPC classification number: C23C16/27 H01J9/025 H01J2201/30457

    Abstract: The present invention intends to provide a manufacturing method of a vacuum micro device, including the steps of forming diamond nuclei on a substrate, forming emitters by etching the substrate with use of the diamond nuclei as a mask, forming an insulating layer and a gate electrode layer as a gate electrode on the emitters, such that the insulating layer and the gate electrode layer are stacked in order, and exposing the diamond nuclei by partially etching the gate electrode layer and the insulating layer.

    Abstract translation: 本发明旨在提供一种真空微型器件的制造方法,包括以下步骤:在衬底上形成金刚石核,通过使用金刚石核作为掩模蚀刻衬底来形成发射体,形成绝缘层和栅电极 层,作为发射极上的栅电极,使得绝缘层和栅电极层依次层叠,并通过部分蚀刻栅电极层和绝缘层来暴露金刚石核。

    Field emmitters of wide-bandgap materials
    106.
    发明授权
    Field emmitters of wide-bandgap materials 失效
    宽带隙材料的场发射器

    公开(公告)号:US5990604A

    公开(公告)日:1999-11-23

    申请号:US17361

    申请日:1998-02-02

    CPC classification number: H01J9/025 H01J1/3042 H01J2201/30457

    Abstract: Improved field-emission devices are based on composing the back contact to the emitter material such that electron-injection efficiency into the emitter material is enhanced. Alteration of the emitter material structure near the contact or geometric field enhancement due to contact morphology gives rise to the improved injection efficiency. The devices are able to emit electrons at high current density and lower applied potential differences and temperatures than previously achieved. Wide-bandgap emitter materials without shallow donors benefit from this approach. The emission characteristics of diamond substitutionally doped with nitrogen, having a favorable emitter/vacuum band structure but being limited by the efficiency of electron injection into it, show especial improvement in the context of the invention. The injection-enhancing contacts can be created by combining the emitter material with an appropriate metal compound and annealing or by conventional dry anisotropic etching or ion bombardment techniques.

    Abstract translation: 改进的场致发射器件基于构成与发射极材料的背接触,使得增加到发射极材料中的电子注入效率。 由接触形态引起的接触或几何场增强附近的发射极材料结构的改变提高了注入效率的提高。 器件能够以高电流密度发射电子,并且能够比以前实现的更低的施加电位差和温度。 没有浅供体的宽带隙发射体材料受益于这种方法。 替代地掺杂有氮的金刚石的发射特性具有良好的发射极/真空带结构但被电子注入的效率所限制,在本发明的上下文中显示出特别的改进。 注入增强触点可以通过将发射极材料与适当的金属化合物组合并进行退火或通过常规的干各向异性蚀刻或离子轰击技术来产生。

    Electron tube having a diamond field emitter
    107.
    发明授权
    Electron tube having a diamond field emitter 失效
    具有金刚石场发射体的电子管

    公开(公告)号:US5959400A

    公开(公告)日:1999-09-28

    申请号:US950177

    申请日:1997-10-14

    Abstract: The present invention relates to an electron tube having a configuration which can maintain its operating stability for a long period of time. The electron tube comprises, at least, a field emitter which is made of diamond or a material mainly composed of diamond and has a surface terminated with hydrogen, and a sealed envelope for accommodating the diamond field emitter. Due to the hydrogen termination, the electron affinity of the diamond field emitter is set to a negative state. Also, hydrogen is enclosed within the sealed envelope. Due to this configuration, the hydrogen-terminated state of the diamond field emitter surface is stabilized, and the electron affinity of the diamond emitter is restrained from changing for a long period of time.

    Abstract translation: 本发明涉及具有长时间保持其运行稳定性的结构的电子管。 电子管至少包括由金刚石制成的场致发射体或主要由金刚石构成并具有用氢封端的表面的材料,以及用于容纳金刚石场发射体的密封外壳。 由于氢终止,金刚石场发射体的电子亲和力被设定为负状态。 此外,氢气封闭在密封的信封内。 由于这种结构,金刚石场发射体表面的氢端基状态被稳定,并且金刚石发射体的电子亲和力被抑制长时间变化。

    Enhanced electron emitter
    108.
    发明授权
    Enhanced electron emitter 失效
    增强型电子发射体

    公开(公告)号:US5945778A

    公开(公告)日:1999-08-31

    申请号:US917123

    申请日:1997-08-25

    Inventor: James E. Jaskie

    CPC classification number: H01J1/3042 H01J2201/30457

    Abstract: An electron emitter formed with a layer of diamond-like carbon having a diamond bond structure with an electrically active defect at an emission site. The electrically active defect acts like a very thin electron emitter with a very low work function and improved current characteristics, including in improved saturation current.

    Abstract translation: 一种电子发射体,其形成有具有在发射部位具有电活性缺陷的金刚石键结构的类金刚石碳层。 电活性缺陷起着非常薄的电子发射体的作用,具有非常低的功函数和改善的电流特性,包括改进的饱和电流。

    High curvature diamond field emitter tip fabrication method
    109.
    发明授权
    High curvature diamond field emitter tip fabrication method 失效
    高曲率金刚石场发射极尖端制造方法

    公开(公告)号:US5916005A

    公开(公告)日:1999-06-29

    申请号:US791872

    申请日:1997-01-31

    CPC classification number: H01J9/025 H01J2201/30457

    Abstract: A high curvature diamond field emitter tip fabrication method includes forming on a substrate a diamond film composed of square (100) phase-oriented facets and (111) phase-oriented facets distributed thereabout and columnar diamond particles having defect density differences between the diamond formed beneath the (100) and (111) diamond growth facets, and etching the diamond film using a oxygen-containing gas plasma. Further, the method includes forming on a substrate a diamond film composed of square (100) facets and (111) facets distributed thereabout and columnar diamond particles having defect density differences between the diamond formed beneath the (100) and (111) diamond growth facets, forming a supporting film on the diamond film, removing the substrate therefrom, and etching the diamond film using an oxygen-containing gas plasma after any one of the previously described steps.

    Abstract translation: 高曲率金刚石场发射极尖端制造方法包括在基底上形成金刚石膜,该金刚石膜由正方形(100)定向面和(111)分布在其周围的相位取向面形成,并且在下面形成的金刚石之间具有缺陷密度差的柱状金刚石颗粒 (100)和(111)金刚石生长面,并使用含氧气体等离子体蚀刻金刚石膜。 此外,该方法包括在基底上形成金刚石膜,该金刚石膜由方形(100)面和分布在其周围的(111)面形成,并且在(100)和(111)金刚石生长面之下形成的金刚石之间具有缺陷密度差的柱状金刚石颗粒 在金刚石膜上形成支撑膜,从其上除去基板,并且在前述步骤中的任何一个之后使用含氧气体等离子体蚀刻金刚石膜。

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