公开(公告)号：US5216511A

公开(公告)日：1993-06-01

申请号：US705669

申请日：1991-05-24

申请人： Nobuhiro Tani

发明人： Nobuhiro Tani

IPC分类号： H04N5/16 ,  H04N5/21 ,  H04N5/225 ,  H04N5/235 ,  H04N5/335 ,  H04N5/341 ,  H04N5/351 ,  H04N5/353 ,  H04N5/359 ,  H04N5/361 ,  H04N5/369 ,  H04N5/3728 ,  H04N5/376 ,  H04N5/378

CPC分类号： H04N5/361 ,  H04N5/3728

摘要： A control device includes a control mechanism for eliminating an effect of dark current generated in a CCD which may be, for example, provided in a still video system operated in a frame mode. The control mechanism controls the imaging device in such a manner that, after an aperture is closed, the imaging device outputs an image signal from a first field and an image signal from a second field, and then outputs data from a third field corresponding to a dark current component. The control mechanism thereafter subtracts the data of the third field from the image signal of the second field. The data obtained by this subtraction is outputted together with the image signal of the first field, as a one frame image signal.

摘要翻译： 控制装置包括用于消除在CCD中产生的暗电流的影响的控制机构，其可以例如设置在以帧模式操作的静止视频系统中。 控制机构以这样一种方式控制成像装置，使得在孔关闭之后，成像装置输出来自第一场的图像信号和来自第二场的图像信号，然后从对应于第一场的第三场输出数据 暗电流分量。 控制机构此后从第二场的图像信号中减去第三场的数据。 通过该减法获得的数据与第一场的图像信号一起作为一帧图像信号输出。

公开(公告)号：US5202907A

公开(公告)日：1993-04-13

申请号：US892930

申请日：1992-06-03

申请人： Kazuya Yonemoto

发明人： Kazuya Yonemoto

IPC分类号： H01L21/339 ,  H01L27/148 ,  H01L29/762 ,  H01L29/768 ,  H04N5/335 ,  H04N5/369 ,  H04N5/3728

CPC分类号： H01L29/76816 ,  H01L27/14831

摘要： There is provided a solid-state image sensor which can optimize the I-V characteristics of MOS transistors on drive side and load side, and which can improve the sensitivity by maximizing the small-signal AC gain of a source follower amplifier. According to one embodiment of the invention, a CCD solid-state image sensor has a floating diffusion type charge detecting amplifier composed of at least one drive side MOS transistor and at least one load side MOS transistor. In a substrate of one conductivity type, there are formed two wells of the opposite conductivity type independently. The drive side MOS transistor is formed in the first well which is deeper from the top surface of the semiconductor substrate. The load side MOS transistor is formed in the shallower second well. It is possible to further improve the AC gain by depleting or neutralizing the first well for the drive MOS transistor, and at the same time neutralizing the second well for the load MOS transistor.

公开(公告)号：US5177614A

公开(公告)日：1993-01-05

申请号：US651970

申请日：1991-02-07

申请人： Yoshiki Kawaoka ,  Kazuya Oda ,  Masahiro Konishi

发明人： Yoshiki Kawaoka ,  Kazuya Oda ,  Masahiro Konishi

IPC分类号： F02B75/02 ,  H04N1/21 ,  H04N5/372 ,  H04N5/3728 ,  H04N5/376

CPC分类号： H04N1/2137 ,  H04N1/2112 ,  H04N3/1537 ,  F02B2075/025 ,  H04N2101/00

摘要： A high definition camera for photographing still pictures using a high resolution charge-coupled solid-state imaging device. The charge-coupled solid-state imaging device includes a plurality of photoelectric conversion elements arranged in rows and columns in matrix form, each element corresponding to a pixel and the rows being divided into four fields, a plurality of vertical charge transfer paths formed between each column of the photoelectric conversion elements and a horizontal charge transfer path connected to a terminal portion of each of the vertical charge transfer paths. Pixel signals generated at photoelectric conversion elements corresponding to one of four fields are transferred to transfer elements in a field shift period corresponding to the one field. Thereafter, the pixel signals are transferred toward the horizontal charge transfer path in accordance with drive signals and are then horizontally transferred by the horizontal charge transfer path at every row to read and store the pixel signals for the one field in a memory.

公开(公告)号：US5157501A

公开(公告)日：1992-10-20

申请号：US437389

申请日：1989-11-16

申请人： Young B. No ,  Dae K. Kim

发明人： Young B. No ,  Dae K. Kim

IPC分类号： G01D21/00 ,  H01J9/42 ,  H04N5/335 ,  H04N5/341 ,  H04N5/359 ,  H04N5/3728 ,  H04N17/00

CPC分类号： H04N5/3591 ,  H04N17/002

摘要： A blooming measuring method for solid state image pick-up device and an apparatus thereof are disclosed, the method being constituted such that a spot beam having a certain area is irradiated to the light receiving zone of the solid state image pick-up device; the number of high level signal charges are counted from among the signal charges which are outputted from the solid state image pick-up device, and which are corresponding to one picture; and the counted value is compared with the area of the above mentioned spot beam. The apparatus of the present invention comprises: a light ray supplying means for supplying a spot beam; a driving signal generating means for driving the solid state image pick-up device; a signal detecting means for detecting only the signal charges; and a counting means for counting only the high level signals. According to the present invention, the variations of the characteristics can be excluded, and the measured results are outputted in a quantitative form, thereby making it possible to understand the characteristics exactly and precisely.

摘要翻译： 公开了一种用于固态摄像装置的开花测量方法及其装置，该方法被构造成使得具有一定面积的点光束照射到固态摄像装置的光接收区域; 从固态摄像装置输出的信号电荷中，对应于一个图像对高电平信号电荷的数量进行计数; 将计数值与上述点光束的面积进行比较。 本发明的装置包括：提供点光束的光线提供装置; 用于驱动固态图像拾取装置的驱动信号产生装置; 信号检测装置，用于仅检测信号电荷; 以及仅对高电平信号进行计数的计数装置。 根据本发明，可以排除特性的变化，并且以定量的形式输出测量结果，从而可以准确且准确地了解特征。

公开(公告)号：US5121214A

公开(公告)日：1992-06-09

申请号：US545732

申请日：1990-06-29

申请人： Bojan T. Turko ,  George J. Yates

发明人： Bojan T. Turko ,  George J. Yates

IPC分类号： H04N5/359 ,  H04N5/372 ,  H04N5/3728

CPC分类号： H04N5/3595 ,  H04N5/3728

摘要： An electronic method for eliminating artifacts in a video camera (10) employing a charge coupled device (CCD) (12) as an image sensor. The method comprises the step of initializing the camera (10) prior to normal read out and includes a first dump cycle period (76) for transferring radiation generated charge into the horizontal register (28) while the decaying image on the phosphor (39) being imaged is being integrated in the photosites, and a second dump cycle period (78), occurring after the phosphor (39) image has decayed, for rapidly dumping unwanted smear charge which has been generated in the vertical registers (32). Image charge is then transferred from the photosites (36) and (38) to the vertical registers (32) and read out in conventional fashion. The inventive method allows the video camera (10) to be used in environments having high ionizing radiation content, and to capture images of events of very short duration and occurring either within or outside the normal visual wavelength spectrum. Resultant images are free from ghost, smear and smear phenomena caused by insufficient opacity of the registers (28) and (32), and are also free from random damage caused by ionization charges which exceed the charge limit capacity of the photosites (36) and (37).

摘要翻译： 一种用于消除使用电荷耦合器件（CCD）（12）作为图像传感器的摄像机（10）中的假象的电子方法。 该方法包括在正常读出之前初始化相机（10）的步骤，并且包括用于将辐射产生的电荷传送到水平寄存器（28）中的第一转储周期周期（76），同时磷光体（39）上的衰减图像为 成像的光束被集成在光斑中，以及在荧光体（39）图像衰减之后发生的用于快速倾倒在垂直寄存器（32）中产生的不想要的拖尾电荷的第二转储周期（78）。 然后，图像电荷从光电（36）和（38）转移到垂直寄存器（32），并以常规方式读出。 本发明的方法允许摄像机（10）在具有高电离辐射含量的环境中使用，并且捕获具有非常短持续时间的事件的图像，并且发生在正常视觉波长光谱内或外。 所得到的图像没有由寄存器（28）和（32）的不透明度不足引起的鬼影，涂片和涂片现象，并且也不受电离费用引起的随机损害，电离电荷超过了太阳能电池的充电限制能力（36）和 （37）。

公开(公告)号：US5060038A

公开(公告)日：1991-10-22

申请号：US442461

申请日：1989-11-30

申请人： Masafumi Kimata ,  Naoki Yutani ,  Masahiko Denda

发明人： Masafumi Kimata ,  Naoki Yutani ,  Masahiko Denda

IPC分类号： H04N5/30 ,  H01L27/14 ,  H01L27/146 ,  H01L27/148 ,  H01L29/423 ,  H04N5/335 ,  H04N5/341 ,  H04N5/357 ,  H04N5/3728

CPC分类号： H01L29/42396 ,  H01L27/14831

摘要： An image sensor using a charge sweep device as a vertical transfer device (3) and comprising a plurality of pixels (10) each of which is formed of a single photo-electro transforming element (1) and a single transfer gate (4) for transferring a signal charge from the photo-electro transforming element into the charge sweep device (3), wherein the width of the transfer gate (4) is equal to or larger than that of the photo-electro transforming element in the direction of charge transfer in the charge sweep device (3).

摘要翻译： 一种使用电荷扫描装置作为垂直传送装置（3）并且包括多个像素（10）的图像传感器，每个像素由单个光电转换元件（1）和单个传输门（4）形成，用于 将光电转换元件的信号电荷转移到电荷扫描装置（3）中，其中传输栅极（4）的宽度等于或大于光电转换元件在电荷转移方向的宽度 在充电扫描装置（3）中。

公开(公告)号：US5057926A

公开(公告)日：1991-10-15

申请号：US534236

申请日：1990-06-07

申请人： Tohru Watanabe

发明人： Tohru Watanabe

IPC分类号： H01L27/148 ,  H04N5/353 ,  H04N5/3728

CPC分类号： H01L27/14887 ,  H04N3/1556

摘要： A method of driving a solid-state imaging device for discharging optical charge stored in a channel area of a solid-state imaging device so as to adjust exposure. In a solid-state imaging device having a horizontal-type overflow drain structure in which an overflow drain is formed at a channel stop for dividing a channel area, optical charge stored in the channel area is transferred in an opposite direction to a reading direction during a vertical scanning period and a potential barrier between the channel area and the overflow drain is extinguished during the period of transfer of optical charge, thereby discharging the charge. The optical charge stored again in the channel area is transferred in the reading direction within a blanking period during the vertical scanning period. In driving a device having a vertical-type overflow drain structure in which a channel area is formed by being divided in a diffusion area formed on a semiconductor substrate, optical charge stored in the channel area is transferred in an opposite direction to a reading direction during a vertical scanning period and a potential barrier between the channel area and the semiconductor substrate is extinguished during the period of transfer of the optical charge, thereby discharging the optical charge. The optical charge stored again in the channel area is transferred in the reading direction within a blanking period during the vertical scanning period. Exposure of the solid-state imaging device is adjusted by means of a discharge timing.

公开(公告)号：US4996600A

公开(公告)日：1991-02-26

申请号：US363085

申请日：1989-06-08

申请人： Yasuaki Nishida ,  Yoshiki Iino ,  Hiroshi Ohtake ,  Masahide Abe ,  Shigeo Yoshikawa ,  Yukio Endo ,  Yoshiyuki Matsunaga ,  Nozomu Harada

发明人： Yasuaki Nishida ,  Yoshiki Iino ,  Hiroshi Ohtake ,  Masahide Abe ,  Shigeo Yoshikawa ,  Yukio Endo ,  Yoshiyuki Matsunaga ,  Nozomu Harada

IPC分类号： H01L27/148 ,  H04N5/335 ,  H04N5/341 ,  H04N5/347 ,  H04N5/355 ,  H04N5/357 ,  H04N5/3722 ,  H04N5/3725 ,  H04N5/3728 ,  H04N5/374

CPC分类号： H04N3/1575 ,  H04N3/1537

摘要： A solid state image sensing device comprises a great number of light receiving elements arrayed in rows and columns, a plurality of vertical CCD registers respectively coupled to columns of the light receiving elements for vertically transferring signal charges sensed by the light receiving elements, a horizontal CCD register for horizontally transferring the signal charges transferred from the vertical CCD register, an adder section for adding together signal charges obtained from a predetermined number of light receiving elements arrayed in columns and rows to form one added signal charge and for obtaining a plurality of added signal charges for all the light receiving elements in each of fields, and a field switcher for introducing signal charges obtained from an array of light receiving elements with at least one element shifted from the previous field to the adder section in each field.

公开(公告)号：US4992877A

公开(公告)日：1991-02-12

申请号：US322402

申请日：1989-03-13

申请人： Tsutomu Takayama

发明人： Tsutomu Takayama

IPC分类号： H04N5/16 ,  H04N5/208 ,  H04N5/335 ,  H04N5/341 ,  H04N5/351 ,  H04N5/361 ,  H04N5/365 ,  H04N5/369 ,  H04N5/3728 ,  H04N5/376 ,  H04N5/378

CPC分类号： H04N5/361 ,  Y10S348/91

摘要： There is provided an image pickup apparatus having an image pickup element for dividing a photoelectrically converted video signal of one frame into first and second fields and for sequentially reading the fields out, wherein the apparatus has a suppression circuit to suppress the signal of a predetermined band in the video signal from the image pickup element by different magnitudes for the first and second fields.

摘要翻译： 提供了一种具有用于将一帧的光电转换的视频信号分成第一和第二场并用于顺序地读出场的图像拾取元件的图像拾取装置，其中该装置具有抑制预定频带的信号的抑制电路 在来自图像拾取元件的视频信号中，对于第一和第二场，具有不同的幅度。

公开(公告)号：US4935794A

公开(公告)日：1990-06-19

申请号：US894712

申请日：1986-08-08

申请人： Shigehiro Miyatake

发明人： Shigehiro Miyatake

IPC分类号： H01L27/148 ,  H04N5/335 ,  H04N5/341 ,  H04N5/359 ,  H04N5/365 ,  H04N5/367 ,  H04N5/369 ,  H04N5/3728

CPC分类号： H01L27/14831

摘要： An interline transfer CCD image sensor includes a plurality of PN junction photosensor elements disposed in a matrix fashion. A plurality of columns of shift register are associated with the matrix aligned PN junction photosensor elements. Each CCD shift register includes a plurality of register elements, each of which includes a buried channel connected to a corresponding PN junction photosensor element via a transfer gate as a potential barrier. A register electrode formed on the buried channel is extended toward the corresponding PN junction photosensor element to cover the transfer gate as the potential barrier. Drive signals are applied to the register electrodes to control the charge transfer operation from the PN junction photosensor to the buried channel in addition to controlling the shift operation in the shift register, thereby eliminating the need for channel stoppers for isolating the photosensor elements.

摘要翻译： 行间传送CCD图像传感器包括以矩阵方式设置的多个PN结光传感器元件。 多个移位寄存器列与矩阵对​​准的PN结光电传感器元件相关联。 每个CCD移位寄存器包括多个寄存器元件，每个寄存器元件包括经由传输门作为势垒连接到相应的PN结光电传感器元件的掩埋沟道。 形成在掩埋沟道上的对准电极朝向相应的PN结光电传感器元件延伸以覆盖传输门作为势垒。 除了控制移位寄存器中的移位操作之外，还将驱动信号施加到寄存器电极以控制从PN结光电传感器到掩埋通道的电荷转移操作，由此不需要用于隔离光电传感元件的通道阻挡器。