Abstract:
The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.
Abstract:
A method of joining a cell by using a proxy coordinator. The method of joining a cell by using a proxy coordinator includes requesting a second device to operate as a proxy coordinator from a first device positioned out of a beacon frame reachable area of the cell, transmitting a time period to operate as the proxy coordinator allocated by a coordinator of the cell, informing the first device that the second device can operate as the proxy coordinator, transmitting a cell join request to the proxy coordinator from the first device through the second device, and transmitting a beacon frame including time allocation information from the coordinator to the first device through the second device.
Abstract:
A light emitting device having a plurality of light emitting cells is disclosed. The light emitting device comprises a substrate; a plurality of light emitting cells positioned on the substrate to be spaced apart from one another, each of the light emitting cells comprising a p-type lower semiconductor layer, an active layer and an n-type upper semiconductor layer; p-electrodes positioned to be spaced apart from one another between the substrate and the light emitting cells, the respective p-electrodes being electrically connected to the corresponding lower semiconductor layers, each of the p-electrodes having an extension extending toward adjacent one of the light emitting cells; n-electrodes disposed on upper surfaces of the respective light emitting cells, wherein a contact surface of each of the n-electrodes electrically contacting with each light emitting cell exists both sides of any straight line that bisects the light emitting cell across the center of the upper surface of the light emitting cell; a side insulating layer for covering sides of the light emitting cells; and wires for connecting the p-electrodes and the n-electrodes, the wires being spaced apart from the sides of the light emitting cells by the side insulating layer.
Abstract:
Provided is a high-efficiency light emitting diode (LED) that includes: a support substrate; a semiconductor stack positioned on the support substrate, the semiconductor stack including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; a first electrode positioned between the support substrate and the semiconductor stack and in ohmic contact with the semiconductor stack; a first bonding pad positioned on a portion of the first electrode that is exposed outside of the semiconductor stack; and a second electrode positioned on the semiconductor stack. Protrusions are formed on exposed surfaces of the semiconductor stack. In addition, the second electrode may be positioned between the first electrode and the support substrate and contacted with the n-type compound semiconductor layer through openings of the semiconductor stack.
Abstract:
Disclosed are enamel varnish compositions for an enamel wire and an enamel wire using the same. The present invention relates to enamel varnish compositions for an enamel wire in which a polymeric resin component is included in an organic solvent, wherein the polymeric resin component includes a first polyamideimide resin, presented in the Chemistry FIG. 1; and a second resin having polyamideimide in which a triazine ring is introduced into a major chain. The enamel wire, in which such a coating pigment composition is applied to the innermost insulated coating layer contacted with the conducting wire, shows the increased adhesivity of the insulated coating layer to the conducting wire without forming an additional bonding layer, as well as the excellent physical properties such as the wear resistance and flexibility, etc.
Abstract:
A semiconductor memory device and an operation control method thereof are provided. The method may comprise executing a control such that a precharge operating mode and an active operating mode may be successively performed in response to one pre-active command, thereby reducing the current consumption and loading of the system, and thus, enhancing system performance.
Abstract:
A PLL includes an open-loop automatic frequency calibration circuit. The open-loop automatic frequency calibration circuit includes a frequency detector, first and second sinks, a comparator and a bank selector. The frequency detector generates an up-signal and a down-signal responding to a frequency difference between a first phase difference signal having a phase difference from a reference oscillation signal and the second phase difference signal having a phase difference from a frequency division oscillation signal. The first and second sinks discharge the first and second capacitors respectively responding to the up-signal and the down-signal. The comparator compares voltages of the first and second capacitors. The bank selector selects a bank according to binary search, selects an optimum bank among two banks lastly searched, and outputs a bank selection signal. The voltage-controlled oscillation changes frequency features thereof in response to the bank selection signal.
Abstract:
There is provided a method of chemical mechanical polishing (CMP) and a method of fabricating a semiconductor device using the same. The method includes forming a layer to be polished on a semiconductor substrate including a normally polished region and a dished region, and forming a dishing (i.e., over-polishing)-preventing layer on the layer to be polished in the region where dishing may occur. Then, the layer to be polished is polished while dishing thereof is prevented using the dishing-preventing layer. Accordingly, the dishing-preventing layer is formed in the region where the dishing (i.e., over-polishing) may occur, so that the dishing is prevented from occurring in a region where pattern density is low and a pattern size is large in the process of CMP.
Abstract:
A semiconductor memory device having a mount test circuit and a mount test method thereof are provided. The test circuit for use in a semiconductor memory device including a plurality of memory blocks may include a comparison unit for comparing test data of at least two memory blocks selected from the plurality of memory blocks, deciding whether or not the test data of the selected memory blocks are identical, and outputting a pass signal or fail signal as a flag signal; and an output selection unit for selecting any one of the selected memory blocks as an output memory block, and changing the output memory block whenever the fail signal is generated from the comparison unit, thus forming it as a data output path, which may lessen error occurrence.
Abstract:
Disclosed are enamel varnish compositions for an enamel wire and an enamel wire using the same. The present invention relates to enamel varnish compositions for an enamel wire in which a polymeric resin component is included in an organic solvent, wherein the polymeric resin component includes a first polyamideimide resin, presented in the Chemistry FIG. 1; and a second resin having polyamideimide in which a triazine ring is introduced into a major chain. The enamel wire, in which such a coating pigment composition is applied to the innermost insulated coating layer contacted with the conducting wire, shows the increased adhesivity of the insulated coating layer to the conducting wire without forming an additional bonding layer, as well as the excellent physical properties such as the wear resistance and flexibility, etc.