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151 条记录 (耗时 0.023 秒)

    Optical semiconductor device
    111.
    发明授权
    Optical semiconductor device 失效
    光半导体器件

    公开(公告)号：US6043515A

    公开(公告)日：2000-03-28

    申请号：US931523

    申请日：1997-09-16

    申请人： Yuzo Kamiguchi ,  Yuzo Hirayama ,  Masashi Sahashi

    发明人： Yuzo Kamiguchi ,  Yuzo Hirayama ,  Masashi Sahashi

    IPC分类号： G02F3/02 ,  H01S5/04 ,  H01S5/042 ,  H01S5/06 ,  H01S5/323 ,  H01L33/00 ,  H01S3/091 ,  H01S3/19

    CPC分类号： H01S5/041 ,  B82Y20/00 ,  H01S5/0425 ,  G02F3/026 ,  H01S2301/173 ,  H01S5/0607 ,  H01S5/32341 ,  H01S5/3404

    摘要： An optical semiconductor device has a structure in which a semiconductor active layer is sandwiched by a p-type semiconductor cladding layer and an n-type semiconductor cladding layer and a p-type contact layer is formed on the p-type semiconductor cladding layer side and an n-type contact layer is formed on the n-type semiconductor cladding layer side, wherein two ferromagnetic layers are formed on the n-type contact layer and two ferromagnetic layers are formed on the p-type contact layer. Magnetization directions of a pair of ferromagnetic layers vertically opposed to each other are set to be parallel to each other, and the magnetization directions of adjacent ferromagnetic layers are inverted to each other.

    摘要翻译： 光半导体器件具有这样的结构，其中半导体有源层被p型半导体包层和n型半导体包覆层夹在中间，p型接触层形成在p型半导体包层侧， 在n型半导体包层侧形成n型接触层，其中在n型接触层上形成两个铁磁层，并在p型接触层上形成两个铁磁层。 将彼此垂直相对的一对铁磁层的磁化方向设定为彼此平行，并且相邻的铁磁层的磁化方向相互反转。

    Exchange-coupling film and, magneto-resistance effect element and magnetic head using thereof
    112.
    发明授权
    Exchange-coupling film and, magneto-resistance effect element and magnetic head using thereof 失效
    交换耦合膜，磁阻效应元件和磁头

    公开(公告)号：US5976713A

    公开(公告)日：1999-11-02

    申请号：US53651

    申请日：1998-04-02

    申请人： Hiromi Fuke ,  Kazuhiro Saito ,  Shin-ichi Nakamura ,  Hitoshi Iwasaki ,  Masashi Sahashi

    发明人： Hiromi Fuke ,  Kazuhiro Saito ,  Shin-ichi Nakamura ,  Hitoshi Iwasaki ,  Masashi Sahashi

    IPC分类号： C23C14/14 ,  G11B5/39 ,  G11C11/15 ,  H01F10/08 ,  H01F10/16 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  G11B5/66

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3932 ,  G11B5/3967 ,  H01F10/3218 ,  H01F10/3268 ,  G11B2005/3996 ,  Y10S428/90 ,  Y10T428/1107

    摘要： An exchange-coupling film has an antiferromagnetic film consisting of an antiferromagnetic alloy such as an RMn alloy or an RMnFe alloy (R is at least one kind of element selected from Ir, Rh, Pt, Au, Ag, Co, Pd, Ni, Cr, Ge, Ru and Cu) and a ferromagnetic film stacked with the antiferromagnetic film. The antiferromagnetic film is oriented in its plane. Further, the antiferromagnetic film has a large grain diameter of such as 5 nm or more. The antiferromagnetic film can be obtained by forming a film with an alloy target of which oxygen content is 1% by weight or less. An exchange-coupling film using such an antiferromagnetic film has exchange-coupling force enough large at room temperature and high temperature region together with excellent corrosion resistance or heat resistance. The exchange-coupling film is provided with an electrode for energizing an electric current to the ferromagnetic film and is used as, for example, a spin valve type magneto-resistance effect element.

    摘要翻译： 交换耦合膜具有由诸如RMn合金或RMnFe合金的反铁磁合金构成的反铁磁膜（R是选自Ir，Rh，Pt，Au，Ag，Co，Pd，Ni， Cr，Ge，Ru和Cu）和与反铁磁膜堆叠的铁磁膜。 反铁磁膜在其平面内取向。 此外，反铁磁膜的粒径例如为5nm以上。 可以通过用氧含量为1重量％以下的合金靶形成膜来获得反铁磁性膜。 使用这种反铁磁膜的交换耦合膜在室温和高温区域具有足够大的交换耦合力以及优异的耐腐蚀性或耐热性。 交换耦合膜设置有用于向铁磁膜施加电流的电极，并且被用作例如自旋阀型磁阻效应元件。

    Magnetic sensor and magnetic recording-reproducing head and magnetic recording-reproducing apparatus using same
    116.
    发明授权
    Magnetic sensor and magnetic recording-reproducing head and magnetic recording-reproducing apparatus using same 失效
    磁传感器和使用磁传感器的磁记录再现头和磁记录再现装置

    公开(公告)号：US5712751A

    公开(公告)日：1998-01-27

    申请号：US791834

    申请日：1997-01-30

    申请人： Hiroaki Yoda ,  Masashi Sahashi

    发明人： Hiroaki Yoda ,  Masashi Sahashi

    IPC分类号： G01R33/09 ,  G11B5/31 ,  G11B5/39 ,  G11B5/127 ,  G11B5/147 ,  G11B5/33

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3143 ,  G11B5/3903 ,  G11B5/3906 ,  G11B5/3967 ,  G11B2005/3996

    摘要： Magnetic sensor comprises a pair of hard magnetic films magnetized inplane in directions substantially perpendicular to the direction of a signal magnetic field and substantially equal to each other, a soft magnetic film formed in the same plane as the pair of hard magnetic films and interposed between the pair of hard magnetic films and held in contact therewith or in proximity thereto, and a signal magnetic field detecting film superposed on the main surface of the soft magnetic film. A magnetic recording.reproducing head using this reproducing head comprises the reproducing head mentioned above, a pair of magnetic pole layers vertically opposed to each other through the medium of a recording gap, and a recording head possessed of a recording track width equal to or smaller than the reproducing track width of the reproducing head. The reproducing track width L.sub.1 is so set as to satisfy the relation, L.sub.2

    摘要翻译： 磁传感器包括一对在与信号磁场的方向基本垂直的方向上被磁化成平面的硬磁膜，并且基本上彼此相等，形成在与该对硬磁膜相同的平面中的软磁膜， 一对硬磁膜并保持与其接触或接近于其上的信号磁场检测膜，叠加在软磁膜的主表面上的信号磁场检测膜。 使用该再现头的磁记录重放头包括上述再现头，通过记录间隙的介质彼此垂直相对的一对磁极层，以及具有等于或小于其的记录轨道宽度的记录头 比再现头的再现轨道宽度。 再现轨道宽度L1被设定为满足L2

    Magnetic material
    118.
    发明授权
    Magnetic material 失效
    磁性材料

    公开(公告)号：US5482573A

    公开(公告)日：1996-01-09

    申请号：US961821

    申请日：1992-10-16

    申请人： Shinya Sakurada ,  Takahiro Hirai ,  Akihiko Tsutai ,  Masashi Sahashi ,  Hideo Nagai ,  Tsutomu Yamashita

    发明人： Shinya Sakurada ,  Takahiro Hirai ,  Akihiko Tsutai ,  Masashi Sahashi ,  Hideo Nagai ,  Tsutomu Yamashita

    IPC分类号： H01F1/055 ,  H01F1/058 ,  H01F1/059

    CPC分类号： H01F1/059 ,  H01F1/055 ,  H01F1/058

    摘要： A magnetic material with an improved maximum energy product useful for high performance permanent magnet, bond magnet and other applications is disclosed. The magnetic material is expressed in a general formula R1.sub.x R2.sub.y M.sub.100-x-y where R1 is at least one element selected from the rare earth elements, R2 is at least one element selected from elements having an atomic radius in a range of 0.156 to 0.174 nm, M is at least one element selected from Fe and Co and x and y are atomic percent individually defined as x.gtoreq.2, y.gtoreq.0.01 and 4.ltoreq.x+y.ltoreq.20, and M occupying 90 atomic percent or more in the principal phase of the compound.

    摘要翻译： 公开了一种具有用于高性能永磁体，粘结磁体和其他应用的改进的最大能量积的磁性材料。 磁性材料以通式R1xR2yM100-xy表示，其中R1是选自稀土元素中的至少一种元素，R2是选自原子半径在0.156至0.174nm范围内的元素中的至少一种元素，M是 选自Fe和Co中的至少一种元素和x和y分别定义为x> / = 2，y> / = 0.01和4

    Magnetic material
    119.
    发明授权
    Magnetic material 失效
    磁性材料

    公开(公告)号：US5480495A

    公开(公告)日：1996-01-02

    申请号：US86379

    申请日：1993-07-06

    申请人： Shinya Sakurada ,  Takahiro Hirai ,  Akihiko Tsutai ,  Masashi Sahashi

    发明人： Shinya Sakurada ,  Takahiro Hirai ,  Akihiko Tsutai ,  Masashi Sahashi

    IPC分类号： H01F1/055 ,  H01F1/059

    CPC分类号： H01F1/0593 ,  H01F1/055

    摘要： Disclosed is a magnetic material which suppresses formation of impurity phase of Fe, Co or Fe-Co alloy, possesses a stable ThMn.sub.12 crystal structure as the principal phase, and is excellent in magnetic properties and lower in cost. Such magnetic material is expressed in a general formula:R1.sub.x R2.sub.y Si.sub.z M.sub.u T.sub.vwhere R1is at least one element selected from Zr and Hf, R2is at least one element selected from rare earth element, M is at least one element selected from C, N and P, T is at least one element selected from Fe and Co, x+y+z+u+v=100, x, y, z, u, v are atomic percent individually defined as 0.1.ltoreq.x.ltoreq.20, 2.ltoreq.y.ltoreq.20, 0.5.ltoreq.z.ltoreq.20, 0.ltoreq.u.ltoreq.20, v.gtoreq.50, and of which principal phase possesses a ThMn.sub.12 crystal structure.

    摘要翻译： 公开了抑制Fe，Co或Fe-Co合金的杂质相的形成的磁性材料，其具有稳定的ThMn12晶体结构作为主相，磁性优异，成本低。 这种磁性材料以通式表示：R1xR2ySizMuTv其中R1为选自Zr和Hf中的至少一种元素，R2为选自稀土元素中的至少一种元素，M为选自C，N和P中的至少一种元素，T为 选自Fe和Co中的至少一种元素，x + y + z + u + v = 100，x，y，z，u，v是原子百分数，各自定义为0.1≤x≤20,2/ = y / = 50，其主相具有ThMn12晶体结构。