Tip structure of platinum-platinum silicide-silicon composite field sensor probe and method for forming MSTA strucutre on the probe
    111.
    发明授权
    Tip structure of platinum-platinum silicide-silicon composite field sensor probe and method for forming MSTA strucutre on the probe 有权
    铂铂硅化硅 - 硅复合材料场传感器探头的尖端结构和探针上形成MSTA结构的方法

    公开(公告)号:US09255944B1

    公开(公告)日:2016-02-09

    申请号:US14665121

    申请日:2015-03-23

    IPC分类号: G01Q70/14 G01Q70/18

    CPC分类号: G01Q70/18 G01Q70/14

    摘要: A platinum-platinum silicide modified silicon composite tip apex, and a method for forming the aforesaid tip apex are disclosed, where a metallic precursor solution and a silicon probe are reacted to form a local platinum nano-structure, which could be precisely controlled with local selectivity, and a local platinum silicide layer is formed between the platinum nano-structure and the silicon probe with an atmospheric microwave annealing (a-MWA) process conducted as well, largely enhancing the conductivity of the tip and spatial resolution of the field detection in field sensitive scanning probe microscopy. In addition to exemption from a stray-field effect and thus having better image quality, the platinum silicide-containing probe could more efficiently enhance the interfacial electron transfer efficiency as compared to the probe tip having only a platinum nano-structure, so that the probe could be applicable to a controlled conductive probe having high spatial resolution.

    摘要翻译: 公开了一种铂 - 铂硅化物改性硅复合顶尖,以及形成上述顶尖的方法,其中使金属前体溶液和硅探针反应形成局部铂纳米结构,其可以用局部 选择性,并且在铂纳米结构和硅探针之间形成局部铂硅化物层,同时进行大气微波退火(a-MWA)工艺,大大提高了尖端的导电性和场检测的空间分辨率 场敏感扫描探针显微镜。 与仅具有铂纳米结构的探针头相比,除了免除杂散场效应并且因此具有更好的图像质量之外,与仅具有铂纳米结构的探针头相比,含铂硅化物探针可以更有效地提高界面电子转移效率,使得探针 可以适用于具有高空间分辨率的受控导电探针。

    MEASURING TEHNOLOGY FOR OPTICAL ELEMENT FOR OBTAINING MEASUREMENT ERROR OPTICAL ELEMENT
    112.
    发明申请
    MEASURING TEHNOLOGY FOR OPTICAL ELEMENT FOR OBTAINING MEASUREMENT ERROR OPTICAL ELEMENT 审中-公开
    用于获取测量误差光学元件的光学元件的测量技术

    公开(公告)号:US20160003706A1

    公开(公告)日:2016-01-07

    申请号:US14322912

    申请日:2014-07-03

    IPC分类号: G01M11/02 G01M11/00

    CPC分类号: G01M11/0271 G01M11/005

    摘要: A measuring method for an optical element for obtaining a plurality of measurement errors of the optical element is disclosed, which comprises steps of irradiating a laser ray to an overall portion of the optical element, wherein the optical element is supported as one of a horizontal state and a vertical state; rotating continuously the optical element with 360 degrees to reflect the laser ray to obtain a reflected light wavefront picture from the reflected laser ray; analyzing the reflected light wavefront picture to obtain a plurality of aberration characteristics information, respectively, each being one of a sine and a cosine wave functions of a wavefront error for each of the plurality of specified rotation angles; analyzing a plurality of interference factors each for the plurality of measurement errors on each of the plurality of aberration characteristics information, respectively; calculating and extracting a plurality of classified aberration characteristics information for each of the plurality of specified rotation angles of the optical element from each of the plurality of aberration characteristics information according to the plurality of measurement errors, respectively; and analyzing each of the plurality of classified aberration characteristics information to obtain an error amount corresponding to each of the plurality of measurement errors, respectively.

    摘要翻译: 公开了一种用于获得光学元件的多个测量误差的光学元件的测量方法,其包括以下步骤:将光线照射到光学元件的整个部分,其中光学元件被支撑为水平状态之一 和垂直状态; 以360度连续旋转光学元件以反射激光,从反射的激光射线获得反射光波前图像; 分析反射光波前图像以获得多个像差特性信息,每个像差特性信息分别是多个指定旋转角度中的每一个的波前误差的正弦波和余弦波函数之一; 分别在多个像差特性信息中的每一个上分析针对多个测量误差的多个干扰因子; 根据多个测量误差,分别从多个像差特性信息中的每一个分别计算和提取用于光学元件的多个指定旋转角度中的每一个的多个分类像差特性信息; 以及分析所述多个分类的像差特性信息中的每一个以分别获得与所述多个测量误差中的每一个对应的误差量。

    Spread spectrum clock generator and method for generating spread spectrum clock signal
    113.
    发明授权
    Spread spectrum clock generator and method for generating spread spectrum clock signal 有权
    扩频时钟发生器和产生扩频时钟信号的方法

    公开(公告)号:US09191128B2

    公开(公告)日:2015-11-17

    申请号:US14108769

    申请日:2013-12-17

    摘要: A spread spectrum clock generator for generating a spread spectrum clock signal is provided. The spread spectrum clock generator includes a phase-locked loop system and a random walk modulator. The random walk modulator generates a modulating signal according to a random walk model. Then, the phase-locked loop system generates a clock signal with spread spectrum in response to the modulating signal. A method for generating the spread spectrum clock signal using the spread spectrum clock generator is also provided.

    摘要翻译: 提供了一种用于产生扩频时钟信号的扩频时钟发生器。 扩频时钟发生器包括锁相环系统和随机游走调制器。 随机游走调制器根据随机游走模型产生调制信号。 然后,锁相环系统响应于调制信号产生具有扩展频谱的时钟信号。 还提供了一种使用扩频时钟发生器产生扩频时钟信号的方法。

    METHOD OF VIRTUAL MACHINE MIGRATION USING SOFTWARE DEFINED NETWORKING
    114.
    发明申请
    METHOD OF VIRTUAL MACHINE MIGRATION USING SOFTWARE DEFINED NETWORKING 审中-公开
    使用软件定义的虚拟机移动方法

    公开(公告)号:US20150309818A1

    公开(公告)日:2015-10-29

    申请号:US14333764

    申请日:2014-07-17

    IPC分类号: G06F9/455

    摘要: The present invention relates to a method of virtual machine migration, which uses the protocol of the software defined networking technology. When a virtual machine is migrated across domains, the local controller will be notified rapidly for submitting the information of the virtual machine to the switch in advance. Thereby, without modifying the network configuration, the migrated virtual machine can provide service continuously; the optimal routing is achieved and thus improving the problem of triangle routing effectively.

    摘要翻译: 本发明涉及一种使用软件定义的网络技术协议的虚拟机迁移方法。 当虚拟机跨域迁移时,将快速通知本地控制器,提前将虚拟机的信息提交给交换机。 因此,在不修改网络配置的情况下,迁移的虚拟机可以连续提供服务; 实现最优路由,从而有效改善三角路由问题。

    Semiconductor structure
    115.
    发明授权
    Semiconductor structure 有权
    半导体结构

    公开(公告)号:US09105481B2

    公开(公告)日:2015-08-11

    申请号:US14010713

    申请日:2013-08-27

    摘要: A semiconductor structure is provided. The semiconductor structure includes a substrate, at least a first N-type germanium (Ge) structure and at least a first P-type Ge structure. The first N-type Ge structure is formed on the substrate and has two end parts and at least a first central part bonded between the two end parts thereof. The first central part is floated over the substrate, and a side surface of the first central part is a {111} Ge crystallographic surface. The first P-type Ge structure is formed on the substrate and has two end parts and at least a second central part bonded between the two end parts thereof. The side surface of the second central part is a {110} Ge crystallographic surface.

    摘要翻译: 提供半导体结构。 半导体结构包括至少第一N型锗(Ge)结构和至少第一P型Ge结构的衬底。 第一N型Ge结构形成在基板上,并且具有两个端部和至少一个结合在其两个端部之间的第一中心部分。 第一中心部分浮在基板上,第一中心部分的侧表面是{111} Ge晶体表面。 第一P型Ge结构形成在基板上,并且具有两个端部和至少两个结合在其两个端部之间的第二中心部分。 第二中心部分的侧表面是{110} Ge晶体表面。

    Method for fabricating power-generating module with solar cell
    116.
    发明授权
    Method for fabricating power-generating module with solar cell 有权
    用太阳能电池制造发电模块的方法

    公开(公告)号:US09040333B2

    公开(公告)日:2015-05-26

    申请号:US14075472

    申请日:2013-11-08

    IPC分类号: H01L31/062 H01L27/142

    摘要: The invention discloses a method for fabricating power-generating module with solar cell. The method includes the steps of providing a flexible substrate; forming a solar cell unit on the flexible substrate by using a high density plasma at a temperature lower than about 150° C.; and forming a circuit unit on the flexible substrate; wherein the solar cell unit is coupled to the circuit unit, so as to provide the power needed for the operation of the circuit unit.

    摘要翻译: 本发明公开了一种用于制造具有太阳能电池的发电模块的方法。 该方法包括提供柔性基板的步骤; 通过使用低于约150℃的高密度等离子体在柔性基板上形成太阳能电池单元; 以及在所述柔性基板上形成电路单元; 其中所述太阳能电池单元耦合到所述电路单元,以便提供所述电路单元的操作所需的功率。

    Bridge structure
    117.
    发明授权
    Bridge structure 有权
    桥梁结构

    公开(公告)号:US08975674B2

    公开(公告)日:2015-03-10

    申请号:US13672971

    申请日:2012-11-09

    摘要: A bridge structure for use in a semiconductor device includes a semiconductor substrate and a semiconductor structure layer. The semiconductor structure layer is formed on a surface of the semiconductor substrate and a lattice difference is formed between the semiconductor structure layer and the semiconductor substrate. The semiconductor structure layer includes at least a first block, at least a second block and at least a third block, wherein the first block and the third block are bonded on the surface of the semiconductor substrate, the second block is floated over the semiconductor substrate and connected with the first block and the third block.

    摘要翻译: 用于半导体器件的桥结构包括半导体衬底和半导体结构层。 半导体结构层形成在半导体衬底的表面上,并且在半导体结构层和半导体衬底之间形成晶格差。 半导体结构层至少包括第一块,至少第二块和至少第三块,其中第一块和第三块结合在半导体衬底的表面上,第二块浮在半导体衬底上 并与第一块和第三块连接。

    Semiconductor chip probe and the conducted EME measurement apparatus with the semiconductor chip probe
    118.
    发明授权
    Semiconductor chip probe and the conducted EME measurement apparatus with the semiconductor chip probe 有权
    半导体芯片探针和带有半导体芯片探针的导电EME测量装置

    公开(公告)号:US08963569B2

    公开(公告)日:2015-02-24

    申请号:US13921973

    申请日:2013-06-19

    IPC分类号: G01R31/00 G01R1/067

    摘要: The present invention discloses a semiconductor chip probe for measuring conducted electromagnetic emission (EME) of a bare die and a conducted EME measurement apparatus with the semiconductor chip probe. The semiconductor chip probe comprises a substrate, a dielectric layer, an impedance unit, a measuring unit and a connection unit. The measurement apparatus comprises a semiconductor chip probe, a high frequency probe, a signal cable and a test receiver. The integrated passive component network designed and embedded inside the semiconductor chip probe forms the 1Ω or 150Ω impedance network. And the semiconductor chip probe is able to directly couple the EME conducted current or voltage from the test pin of the flipped chip under test to the test receiver for measurement.

    摘要翻译: 本发明公开了一种用于测量裸片的传导电磁发射(EME)和带有半导体芯片探针的传导式EME测量装置的半导体芯片探针。 半导体芯片探针包括衬底,电介质层,阻抗单元,测量单元和连接单元。 测量装置包括半导体芯片探针,高频探针,信号电缆和测试接收器。 半导体芯片探针内部设计和嵌入的集成无源元件网络形成1&OHgr; 或150&OHgr; 阻抗网络。 并且半导体芯片探针能够将EME传导电流或电压从测试的被翻转芯片的测试引脚耦合到测试接收器进行测量。

    GERMANIUM STRUCTURE, GERMANIUM FIN FIELD EFFECT TRANSISTOR STRUCTURE AND GERMANIUM COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TRANSISTOR STRUCTURE
    119.
    发明申请
    GERMANIUM STRUCTURE, GERMANIUM FIN FIELD EFFECT TRANSISTOR STRUCTURE AND GERMANIUM COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TRANSISTOR STRUCTURE 审中-公开
    锗结构,锗元素场效应晶体结构和锗复合金属氧化物半导体晶体管结构

    公开(公告)号:US20140374834A1

    公开(公告)日:2014-12-25

    申请号:US13922354

    申请日:2013-06-20

    IPC分类号: H01L27/092

    摘要: A germanium (Ge) structure includes a substrate, a Ge layer and at least a Ge spatial structure. The Ge layer is formed on the substrate, and a surface of the Ge layer is a Ge {110} lattice plane. The Ge spatial structure is formed in the Ge layer and includes a top surface and a sidewall surface, wherein the top surface is a Ge {110} lattice plane and the sidewall surface is perpendicular to the top surface. An axis is formed at a junction of the sidewall surface and the top surface, and an extensive direction of the axis is parallel to a Ge [112] lattice vector on the surface of the Ge layer, therefore the sidewall surface is a Ge {111} lattice plane. Because Ge {111} surface channels have very high electron mobility, this Ge spatial structure may be applied for fabricating high-performance Ge semiconductor devices.

    摘要翻译: 锗(Ge)结构包括基底,Ge层和至少Ge空间结构。 Ge层形成在基板上,Ge层的表面是Ge {110}晶格面。 Ge空间结构形成在Ge层中并且包括顶表面和侧壁表面,其中顶表面是Ge {110}晶格平面,并且侧壁表面垂直于顶表面。 在侧壁表面和顶表面的接合处形成轴线,并且轴的宽大方向平行于Ge层表面上的Ge [112]晶格矢量,因此侧壁表面是Ge {111 }晶格面。 由于Ge {111}表面通道具有非常高的电子迁移率,所以该Ge空间结构可用于制造高性能Ge半导体器件。

    Dual-Vortical-Flow Hybrid Rocket Engine
    120.
    发明申请
    Dual-Vortical-Flow Hybrid Rocket Engine 有权
    双涡流混合火箭发动机

    公开(公告)号:US20140352276A1

    公开(公告)日:2014-12-04

    申请号:US14070881

    申请日:2013-11-04

    IPC分类号: F02K9/00

    摘要: The present invention discloses a dual-vortical-flow hybrid rocket engine, including a main body and a nozzle communicating with an end of the main body. The main body includes a plurality of disk-like combustion chambers arranged longitudinally, and a central combustion chamber formed along the axial portion and communicating the disk-like combustion chambers. Each of the disk-like combustion chambers is provided with a plurality of oxidizer injection nozzles at its inner circumference surface. Inside the disk-like combustion chambers, the oxidizer is injected in nearly the tangent directions of the circumference, and the injection directions are opposite for the neighboring disk-like combustion chambers, which creates vortical flows with opposite rotating directions so as to increase the total residence time of the combustion reactions of the oxidizer and the solid-state fuel in the disk-like combustion chambers of the present invention.

    摘要翻译: 本发明公开了一种双涡旋混合火箭发动机,其包括主体和与主体的端部连通的喷嘴。 主体包括纵向布置的多个盘形燃烧室和沿轴向部分形成并连通圆盘状燃烧室的中心燃烧室。 每个盘状燃烧室在其内圆周表面上设置有多个氧化剂注入喷嘴。 在盘状燃烧室内部,氧化剂沿着圆周的切线方向喷射,并且相邻的盘状燃烧室的喷射方向相反,这形成相反旋转方向的涡旋流,从而增加总量 本发明的盘状燃烧室中的氧化剂和固体燃料的燃烧反应的停留时间。