摘要:
A platinum-platinum silicide modified silicon composite tip apex, and a method for forming the aforesaid tip apex are disclosed, where a metallic precursor solution and a silicon probe are reacted to form a local platinum nano-structure, which could be precisely controlled with local selectivity, and a local platinum silicide layer is formed between the platinum nano-structure and the silicon probe with an atmospheric microwave annealing (a-MWA) process conducted as well, largely enhancing the conductivity of the tip and spatial resolution of the field detection in field sensitive scanning probe microscopy. In addition to exemption from a stray-field effect and thus having better image quality, the platinum silicide-containing probe could more efficiently enhance the interfacial electron transfer efficiency as compared to the probe tip having only a platinum nano-structure, so that the probe could be applicable to a controlled conductive probe having high spatial resolution.
摘要:
A measuring method for an optical element for obtaining a plurality of measurement errors of the optical element is disclosed, which comprises steps of irradiating a laser ray to an overall portion of the optical element, wherein the optical element is supported as one of a horizontal state and a vertical state; rotating continuously the optical element with 360 degrees to reflect the laser ray to obtain a reflected light wavefront picture from the reflected laser ray; analyzing the reflected light wavefront picture to obtain a plurality of aberration characteristics information, respectively, each being one of a sine and a cosine wave functions of a wavefront error for each of the plurality of specified rotation angles; analyzing a plurality of interference factors each for the plurality of measurement errors on each of the plurality of aberration characteristics information, respectively; calculating and extracting a plurality of classified aberration characteristics information for each of the plurality of specified rotation angles of the optical element from each of the plurality of aberration characteristics information according to the plurality of measurement errors, respectively; and analyzing each of the plurality of classified aberration characteristics information to obtain an error amount corresponding to each of the plurality of measurement errors, respectively.
摘要:
A spread spectrum clock generator for generating a spread spectrum clock signal is provided. The spread spectrum clock generator includes a phase-locked loop system and a random walk modulator. The random walk modulator generates a modulating signal according to a random walk model. Then, the phase-locked loop system generates a clock signal with spread spectrum in response to the modulating signal. A method for generating the spread spectrum clock signal using the spread spectrum clock generator is also provided.
摘要:
The present invention relates to a method of virtual machine migration, which uses the protocol of the software defined networking technology. When a virtual machine is migrated across domains, the local controller will be notified rapidly for submitting the information of the virtual machine to the switch in advance. Thereby, without modifying the network configuration, the migrated virtual machine can provide service continuously; the optimal routing is achieved and thus improving the problem of triangle routing effectively.
摘要:
A semiconductor structure is provided. The semiconductor structure includes a substrate, at least a first N-type germanium (Ge) structure and at least a first P-type Ge structure. The first N-type Ge structure is formed on the substrate and has two end parts and at least a first central part bonded between the two end parts thereof. The first central part is floated over the substrate, and a side surface of the first central part is a {111} Ge crystallographic surface. The first P-type Ge structure is formed on the substrate and has two end parts and at least a second central part bonded between the two end parts thereof. The side surface of the second central part is a {110} Ge crystallographic surface.
摘要:
The invention discloses a method for fabricating power-generating module with solar cell. The method includes the steps of providing a flexible substrate; forming a solar cell unit on the flexible substrate by using a high density plasma at a temperature lower than about 150° C.; and forming a circuit unit on the flexible substrate; wherein the solar cell unit is coupled to the circuit unit, so as to provide the power needed for the operation of the circuit unit.
摘要:
A bridge structure for use in a semiconductor device includes a semiconductor substrate and a semiconductor structure layer. The semiconductor structure layer is formed on a surface of the semiconductor substrate and a lattice difference is formed between the semiconductor structure layer and the semiconductor substrate. The semiconductor structure layer includes at least a first block, at least a second block and at least a third block, wherein the first block and the third block are bonded on the surface of the semiconductor substrate, the second block is floated over the semiconductor substrate and connected with the first block and the third block.
摘要:
The present invention discloses a semiconductor chip probe for measuring conducted electromagnetic emission (EME) of a bare die and a conducted EME measurement apparatus with the semiconductor chip probe. The semiconductor chip probe comprises a substrate, a dielectric layer, an impedance unit, a measuring unit and a connection unit. The measurement apparatus comprises a semiconductor chip probe, a high frequency probe, a signal cable and a test receiver. The integrated passive component network designed and embedded inside the semiconductor chip probe forms the 1Ω or 150Ω impedance network. And the semiconductor chip probe is able to directly couple the EME conducted current or voltage from the test pin of the flipped chip under test to the test receiver for measurement.
摘要:
A germanium (Ge) structure includes a substrate, a Ge layer and at least a Ge spatial structure. The Ge layer is formed on the substrate, and a surface of the Ge layer is a Ge {110} lattice plane. The Ge spatial structure is formed in the Ge layer and includes a top surface and a sidewall surface, wherein the top surface is a Ge {110} lattice plane and the sidewall surface is perpendicular to the top surface. An axis is formed at a junction of the sidewall surface and the top surface, and an extensive direction of the axis is parallel to a Ge [112] lattice vector on the surface of the Ge layer, therefore the sidewall surface is a Ge {111} lattice plane. Because Ge {111} surface channels have very high electron mobility, this Ge spatial structure may be applied for fabricating high-performance Ge semiconductor devices.
摘要:
The present invention discloses a dual-vortical-flow hybrid rocket engine, including a main body and a nozzle communicating with an end of the main body. The main body includes a plurality of disk-like combustion chambers arranged longitudinally, and a central combustion chamber formed along the axial portion and communicating the disk-like combustion chambers. Each of the disk-like combustion chambers is provided with a plurality of oxidizer injection nozzles at its inner circumference surface. Inside the disk-like combustion chambers, the oxidizer is injected in nearly the tangent directions of the circumference, and the injection directions are opposite for the neighboring disk-like combustion chambers, which creates vortical flows with opposite rotating directions so as to increase the total residence time of the combustion reactions of the oxidizer and the solid-state fuel in the disk-like combustion chambers of the present invention.