公开(公告)号：US11171258B2

公开(公告)日：2021-11-09

申请号：US16493438

申请日：2018-05-03

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Christian Leirer ,  Isabel Otto

IPC: H01L33/38 ,  H01L33/40 ,  H01L33/44

Abstract: A method for manufacturing a radiation-emitting semiconductor device and radiation-emitting semiconductor device are disclosed. In an embodiment a method includes providing a radiation-emitting semiconductor chip having a first main surface including a radiation exit surface of the semiconductor chip, applying a metallic seed layer to a second main surface of the semiconductor chip opposite to the first main surface, galvanically depositing a first metallic layer on the seed layer for forming a first electrical contact point and a second electrical contact point, galvanically depositing a second metallic layer on the first metallic layer for forming the first electrical contact point and the second electrical contact point, wherein a material of the first metallic layer and a material of the second metallic layer are different, and applying a casting compound between the contact points.

公开(公告)号：US11158991B2

公开(公告)日：2021-10-26

申请号：US16495193

申请日：2018-05-09

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Wolfgang Neumann ,  Jörn Kampmeier

IPC: H01S5/022 ,  H01L33/48 ,  H01S5/02216 ,  H01S5/02257

Abstract: A cover for an optoelectronic component includes a body of a first material, the body includes a lower side and, starting from the lower side, a recess for the optoelectronic component, the body includes a side surface adjacent to the lower side, the recess is continued as far as the side surface, a plate of a second material is arranged on the side surface, the second material being transparent for a radiation wavelength of the optoelectronic component, and the body and the plate are connected.

公开(公告)号：US11158771B2

公开(公告)日：2021-10-26

申请号：US16485412

申请日：2018-03-01

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Markus Pindl ,  Simon Jerebic

IPC: H01L33/52 ,  H01L33/00 ,  H01L33/50 ,  H01L33/60 ,  H01L33/62

Abstract: A method for producing optoelectronic semiconductor components is disclosed. In an embodiment a method includes A) applying radiation-emitting semiconductor chips to an intermediate carrier, wherein the semiconductor chips are volume emitters configured to emit radiation at light exit main sides and on chip side surfaces; B) applying a clear potting permeable to the radiation directly onto the chip side surfaces so that the chip side surfaces are predominantly or completely covered by the clear potting and a thickness of the clear potting in each case decreases monotonically in a direction away from the main light exit sides; C) producing a reflection element so that the reflection element and the clear potting touch on an outer side of the clear potting opposite the chip side surfaces; and D) detaching the semiconductor chips from the intermediate carrier and attaching the semiconductor chips to a component carrier so that the light exit main sides of the semiconductor chips face away from the component carrier.

公开(公告)号：US20210305470A1

公开(公告)日：2021-09-30

申请号：US17344495

申请日：2021-06-10

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Benjamin Daniel Mangum ,  David O'Brien ,  Britta Göötz

IPC: H01L33/50 ,  C09K11/08 ,  G02F1/13357 ,  G09F9/33 ,  H01L27/15 ,  H01L33/52 ,  H05B33/14

Abstract: A light emitting device is disclosed. In an embodiment a light-emitting device includes a pixel comprising at least three sub-pixels, wherein the at least three sub-pixel include a first sub-pixel including a first conversion element, wherein the first conversion element includes a green phosphor, a second sub-pixel including a second conversion element, wherein the second conversion element includes a red phosphor and a third sub-pixel free of a conversion element, wherein the third sub-pixel is configured to emit blue primary radiation, wherein each sub-pixels has an edge length of at most 100 μm, and wherein the pixel is a linear chain of sub-pixels and a plurality of pixels is arranged in a two dimensional ordered pattern so that a first sub-pixel is never adjacent to a third sub-pixel in a vertical direction and in a horizontal direction of the ordered pattern.

公开(公告)号：US11121300B2

公开(公告)日：2021-09-14

申请号：US16615909

申请日：2017-08-11

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Chui Wai Chong ,  Teng Hai Chuah ,  Seong Tak Koay ,  Adelene Ng

IPC: H01L33/62 ,  H01L33/32 ,  H01L33/44 ,  H01L33/56

Abstract: A method of producing optoelectronic semiconductor devices includes in the stated order: A) providing a semiconductor layer sequence on a transparent wafer, the semiconductor layer sequence including an active layer; B) applying electrical contact pads on a mounting face of the semiconductor layer sequence; C) coating the semiconductor layer sequence at the mounting face and/or on the electrical contact pads with a protective layer; D) dicing the semiconductor layer sequence and the wafer to form semiconductor chips with side faces; E) forming a casting body all around the semiconductor chips directly on the side faces, the protective layer having anti-wetting properties towards a material of the casting body; and F) dicing the casting body to the optoelectronic semiconductor devices, wherein the protective layer remains on the mounting face and/or on the electrical contact pads in the finished optoelectronic semiconductor devices.

公开(公告)号：US11114574B2

公开(公告)日：2021-09-07

申请号：US16624969

申请日：2018-06-13

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Daniel Dietze ,  Tim Boescke ,  Wolfgang Zinkl

IPC: H01L31/0216 ,  A61B5/024 ,  H01L27/146 ,  H01L27/144 ,  G02B5/22 ,  G02B5/28

Abstract: A semiconductor sensor includes a detector chip that detects green light and an interference filter that optically precedes the detector chip and is permeable to green light and impermeable and reflective to red light and near-infrared radiation. A color filter optically precedes the interference filter. The color filter has a transparency of at least 60% for green light and has an absorbing effect for red light and near-infrared radiation. The semiconductor sensor appears gray or black in the region of the interference filter independently of the angle.

公开(公告)号：US11111385B2

公开(公告)日：2021-09-07

申请号：US16323412

申请日：2017-08-04

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Hansjörg Schöll ,  Stephan Blaszczak

IPC: H01L33/56 ,  C08L83/04 ,  C08G77/04

Abstract: A silicone composition includes a multiphase mixture of a low-refractive silicone having a refractive index n25D589 less than 1.45 and a high-refractive silicone having a refractive index n25D589 greater than 1.50, wherein a proportion of high-refractive silicone is 0.1 to 5.0 mass percent in relation to a total mass of high-refractive and low-refractive silicone, and the high-refractive silicone forms inclusions within the low-refractive silicone.

公开(公告)号：US11107953B2

公开(公告)日：2021-08-31

申请号：US16607781

申请日：2018-05-16

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Attila Molnar

IPC: H01L33/38 ,  H01L33/62

Abstract: An optoelectronic semiconductor chip includes a semiconductor layer sequence having an active region arranged between first and second semiconductor layers; a first contact and a second contact for external electrical contacting of the semiconductor chip; first and second terminal layer regions, via which the first and second contacts electrically conductively connect to the first and second semiconductor layers; and a first insulation layer and a second insulation layer; wherein the first terminal layer region and the second terminal layer region are each arranged in some areas between the first insulation layer and the second insulation layer in a vertical direction perpendicular to a main extension plane of the active region; the first terminal layer region and the second terminal layer region are arranged side by side without overlapping; and the first terminal layer region extends in places up to a side surface of the semiconductor chip.

公开(公告)号：US11094845B2

公开(公告)日：2021-08-17

申请号：US16489835

申请日：2018-03-15

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Massimo Drago ,  Alexander Frey ,  Joachim Hertkorn

IPC: H01L33/22 ,  H01L33/00 ,  H01L33/12 ,  H01L33/32

Abstract: A method of producing light-emitting diode chips includes A) and C)-F) in order: A) providing a growth substrate, C) producing a structural layer, the structural layer including Alx1Ga1-x1-y1Iny1N, where-in y1≥0.5, and a plurality of structural elements with a mean height of at least 50 nm so that a side of the structural layer facing away from the growth substrate is rough, D) producing a cover layer on the structural layer, the cover layer forming the structural layer true to shape and including Alx2Ga1-x2-y2Iny2N, wherein x2≥0.6, E) producing a planarization layer on the cover layer, a side of the finished planarization layer is flat and the planarization layer includes Alx3Ga1-x3-y3Iny3N, wherein x3+y3≤0.2, and F) growing a functional layer sequence that generates radiation on the planarization layer.

公开(公告)号：US11081520B2

公开(公告)日：2021-08-03

申请号：US16310778

申请日：2017-07-03

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Christoph Rupprich ,  Andreas Rudolph ,  Hubert Halbritter

IPC: H01L33/00 ,  H01L27/15 ,  H01L33/24 ,  H01L33/30 ,  H01L33/62

Abstract: A luminescence diode and a method for producing a luminescence diode are disclosed. In an embodiment a luminescence diode includes a carrier substrate, a first semiconductor layer sequence including a first active layer suitable for emitting radiation having a first dominant wavelength λdom1 and a second semiconductor layer sequence including a second active layer suitable for emitting radiation having a second dominant wavelength λdom2, wherein the first semiconductor layer sequence and the second semiconductor layer sequence are arranged side by side on the carrier substrate, and wherein the first dominant wavelength λdom1 of the first active layer and the second dominant wavelength λdom2 of the second active layer are different from each other.