公开(公告)号：US20050043437A1

公开(公告)日：2005-02-24

申请号：US10918733

申请日：2004-08-16

申请人： Shinya Watanabe

发明人： Shinya Watanabe

IPC分类号： C09D11/10 ,  C03C17/00 ,  C09D5/00

CPC分类号： C09D11/101

摘要： A pigment dispersion including photopolymerizable compounds and pigments as well as an actinic radiation curable type ink jet composition including photopolymerizable compounds, photopolymerization initiators, and pigments are provided. The hydrophilicity δm of the surface of pigments incorporated therein is at most 22.

摘要翻译： 提供了包含光聚合性化合物和颜料的颜料分散体以及包含光聚合性化合物，光聚合引发剂和颜料的光化射线固化型喷墨组合物。 其中掺入的颜料表面的亲水性达到至多22。

公开(公告)号：US06791193B2

公开(公告)日：2004-09-14

申请号：US10382020

申请日：2003-03-05

申请人： Shinya Watanabe ,  Isao Ozawa

发明人： Shinya Watanabe ,  Isao Ozawa

IPC分类号： H01L2348

CPC分类号： H01L23/49827 ,  H01L23/49833 ,  H01L23/49838 ,  H01L25/105 ,  H01L2224/32225 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/15173 ,  H01L2924/15311

摘要： A chip mounting substrate comprising: a mounting base defined by a first surface and a second surface opposite to the first surface; a plurality of first lands disposed on the first surface, being classified into first and second groups of the first lands; and a plurality of second lands disposed on the second surface so as to face to the first lands, being classified into first and second groups of the second lands.

摘要翻译： 一种芯片安装基板，包括：由第一表面和与第一表面相对的第二表面限定的安装基座; 设置在所述第一表面上的多个第一平台，分为第一和第二组第一平台; 以及设置在所述第二表面上以面对所述第一平台的多个第二平台，被分为第一和第二组第二平台。

公开(公告)号：US06707133B2

公开(公告)日：2004-03-16

申请号：US10067320

申请日：2002-02-07

申请人： Shinya Watanabe ,  Hiroyuki Katou

发明人： Shinya Watanabe ,  Hiroyuki Katou

IPC分类号： H01L23544

CPC分类号： G02B6/125 ,  G02B6/12007 ,  G02B6/12021 ,  G02B6/12026 ,  G02B6/12033 ,  G02B6/13 ,  G02B6/29353 ,  G02B6/30

摘要： On a wafer, patterns of arrayed waveguide gratings are formed. Each arrayed waveguide grating has an arcuate shape obtained by arranging two curved-line portions convexed in the same direction at a predetermined spacing and connecting respective end portions thereof with two mutually parallel straight lines. These arrayed waveguide gratings are cut out along straight cutting paths and curved cutting paths in which two arcuate portions of the same shape are arranged side by side in a lateral direction. Thus, a larger number of chips can be produced as compared with a case where each array waveguide grating is cut out in a rectangular shape. Ultrasonic machining techniques or sandblast machining techniques are suitable for the cutting operation.

摘要翻译： 在晶片上形成阵列波导光栅的图形。 每个阵列波导光栅具有通过将两个相同方向上凸起的曲线部分以预定间隔布置并将其各自端部与两个相互平行的直线连接而获得的弓形形状。 这些阵列波导光栅沿着直线切割路径和弯曲切割路径切割，其中相同形状的两个弓形部分沿横向并排布置。 因此，与每个阵列波导光栅切割成矩形的情况相比，可以产生更多的芯片。 超声波加工技术或喷砂加工技术适用于切割操作。

公开(公告)号：US06653573B2

公开(公告)日：2003-11-25

申请号：US09825418

申请日：2001-04-03

申请人： Yoshio Awakura ,  Shinya Watanabe ,  Satoshi Shiratori ,  Hiroshi Ono

发明人： Yoshio Awakura ,  Shinya Watanabe ,  Satoshi Shiratori ,  Hiroshi Ono

IPC分类号： H05K103

CPC分类号： H05K3/244 ,  H05K1/0233

摘要： In order to provide a wiring board comprising a magnetic material effective in suppressing spurious radiation in semiconductor devices and electronic circuits and the like that operate at high speeds, a wiring board (15) comprises an insulative base material (17), conductor patterns (19a to 19f) formed thereon, and magnetic thin films (21a to 21f) formed on the conductor patterns (19a to 19f). The magnetic thin film is configured of a magnetic loss material represented by M—X—Y, where M is at least one of Fe, Co, and Ni, X is at least one element other than M or Y, and Y is at least one of F, N, and O, the maximum value &mgr;″max of the loss factor &mgr;″ that is an imaginary component in the complex permeability characteristic of the magnetic loss material exists within a frequency range of 100 MHz to 10 GHz, and a relative bandwidth bwr is not greater than 200% or not smaller than 150% where the relative bandwidth bwr is obtained by extracting a frequency bandwidth between two frequencies at which the value of &mgr;″ is 50% of the maximum &mgr;″max and normalizing the frequency bandwidth at the center frequency thereof.

摘要翻译： 为了提供一种包括有效抑制在高速运转的半导体装置和电子电路等中的杂散辐射的磁性材料的布线板，布线板（15）包括绝缘基材（17），导体图案（19a） 至19f）和形成在导体图案（19a至19f）上的磁性薄膜（21a至21f）。 磁性薄膜由MXY表示的磁损耗材料构成，其中M为Fe，Co和Ni中的至少一种，X为除M或Y以外的至少一种元素，Y为F， N和O中，作为磁损耗材料的复磁导率特性的虚分量的损耗因子μ“的最大值mu''max存在于100MHz〜10GHz的频率范围内，相对带宽 bwr不大于200％或不小于150％，其中通过提取两个频率之间的频率带宽获得相对带宽bwr，其中mu“的值是最大mu''max的50％，并且使频率正规化 带宽在其中心频率。

公开(公告)号：US6139952A

公开(公告)日：2000-10-31

申请号：US381128

申请日：1999-09-16

申请人： Koji Furuya ,  Shinya Watanabe ,  Shinichi Kawai ,  Kenji Suzuki

发明人： Koji Furuya ,  Shinya Watanabe ,  Shinichi Kawai ,  Kenji Suzuki

IPC分类号： B29C55/12 ,  B29C71/02 ,  C08J5/18 ,  H01H13/702 ,  B32B5/16 ,  C08G63/02 ,  H01H1/10

CPC分类号： C08J5/18 ,  B29C55/12 ,  B29C71/02 ,  H01H13/702 ,  B29C2791/001 ,  B29K2067/00 ,  C08J2367/02 ,  H01H2209/002 ,  Y10T428/24628 ,  Y10T428/26 ,  Y10T428/269 ,  Y10T428/27

摘要： A biaxially oriented polyester film for a membrane switch, which is made from a polyester containing at least 80 mol % of ethylene-2,6-naphthalene dicarboxylate recurring units and which has an endothermic peak with an endothermic energy of at least 0.4 mJ/mg at a temperature of 110 to 160.degree. C.This film is produced by subjecting a biaxially oriented polyester film produced from the above polyester in accordance with a method known per se to the following steps in the order named:(1) the step of heating the film under no strain at a temperature of 150 to 180.degree. C. for 1 to 5 hours; and(2) the step of heating the film in an unrolled or rolled state at a temperature of 80 to 122.degree. C. for 5 to 200 hours.

摘要翻译： PCT No.PCT / JP98 / 05242 Sec。 371 1999年9月16日第 102（e）1999年9月16日PCT 1998年11月20日PCT PCT。 公开号WO99 /​​ 37466 日期1999年7月29日一种用于膜开关的双轴取向聚酯膜，其由含有至少80mol％的乙烯-2,6-萘二甲酸酯重复单元的聚酯制成，并且具有吸热峰的吸热峰为 在110〜160℃的温度下，至少0.4mJ / mg。该薄膜通过按照本身已知的方法按下列步骤按下列步骤将上述聚酯制得的双轴取向聚酯薄膜进行制备：（1 ）在150〜180℃的温度下在无应变下加热膜1〜5小时的步骤; 和（2）在80〜122℃的温度下在未卷曲或卷曲状态下加热膜5〜200小时的工序。

公开(公告)号：US6124043A

公开(公告)日：2000-09-26

申请号：US331848

申请日：1999-06-28

申请人： Ryoji Tsukamoto ,  Seiji Ito ,  Mitsuru Teramoto ,  Shinya Watanabe ,  Koji Furuya ,  Shinichi Kawai ,  Kenji Suzuki

发明人： Ryoji Tsukamoto ,  Seiji Ito ,  Mitsuru Teramoto ,  Shinya Watanabe ,  Koji Furuya ,  Shinichi Kawai ,  Kenji Suzuki

IPC分类号： B29C55/12 ,  C08J5/18 ,  G03C1/795 ,  G11B5/73 ,  B32B27/06 ,  G03C1/76 ,  C08G63/18

CPC分类号： C08J5/18 ,  B29C55/12 ,  G03C1/7954 ,  G11B5/73 ,  B29K2067/00 ,  C08J2367/02 ,  Y10S428/90 ,  Y10S428/902

摘要： A biaxially oriented film (1) which is substantially formed from a polyethylene naphthalate copolymer comprising ethylene-2,6-naphthalate units in an amount of 90 to 99.9 mol % based on the total of all recurring units and an isophthalic acid component or a decalin-2,6-dicarboxylic acid component in an amount of 0.1 to 10 mol % based on the total of all dicarboxylic acid components and which has (2) Young's modulus of 500 kg/mm.sup.2 or more in each of a longitudinal direction and a transverse direction, (3) a plane orientation coefficient of 0.230 to 0.275 and (4) a density of 1.350 g/cm.sup.3 or more.

摘要翻译： PCT No.PCT / JP98 / 04871 Sec。 371日期1999年6月28日第 102（e）1999年6月28日PCT PCT 1998年10月28日PCT公布。 出版物WO99 /​​ 21912 PCT 日期1999年5月6日一种双轴取向膜（1），其基本上由聚萘二甲酸乙二醇酯共聚物形成，该聚萘二甲酸乙二醇酯共聚物包含基于所有重复单元总数为90-99.9摩尔％的乙烯 - 2,6-萘二甲酸酯单元和间苯二甲酸 组分或十氢化萘-2,6-二羧酸组分，其量相对于所有二羧酸组分的总量为0.1至10mol％，并且其具有（2）每个纵向中的杨氏模量为500kg / mm 2或更大 方向和横向，（3）平面取向系数为0.230〜0.275，（4）密度为1.350g / cm3以上。

公开(公告)号：US6097052A

公开(公告)日：2000-08-01

申请号：US882300

申请日：1997-06-25

申请人： Yoshinori Tanaka ,  Mitsuya Kinoshita ,  Shinya Watanabe ,  Tatsuo Kasaoka ,  Moriaki Akazawa ,  Toshiaki Ogawa

发明人： Yoshinori Tanaka ,  Mitsuya Kinoshita ,  Shinya Watanabe ,  Tatsuo Kasaoka ,  Moriaki Akazawa ,  Toshiaki Ogawa

IPC分类号： H01L21/28 ,  H01L21/02 ,  H01L21/283 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/768 ,  H01L21/8242 ,  H01L23/522 ,  H01L27/10 ,  H01L27/108

CPC分类号： H01L27/1085 ,  H01L21/76802 ,  H01L23/5226 ,  H01L27/10852 ,  H01L28/82 ,  H01L28/86 ,  H01L28/90 ,  H01L2924/0002

摘要： A contact hole having an opening diameter smaller than the minimum dimension that can be formed by photolithographic technique is formed. Using an interlayer insulating film 8 formed on a semiconductor substrate as an etching mask, etching is carried out halfway to form an opening 8a. The etching mask is removed, and a TEOS film 10 is formed on the interlayer oxide film 8. The whole surface is then etched anisotropically to form a contact hole 11.

公开(公告)号：US6033952A

公开(公告)日：2000-03-07

申请号：US307567

申请日：1999-05-10

申请人： Shunji Yasumura ,  Shinya Watanabe

发明人： Shunji Yasumura ,  Shinya Watanabe

IPC分类号： H01L21/02 ,  H01L21/8242

CPC分类号： H01L27/10852 ,  H01L28/82

摘要： A semiconductor device manufacturing method which involves a fewer number of manufacturing processes and which eliminates the use of expensive high precision stepper and half-tone mask, or the like, by employing a simplified process flow, in which method an identical mask is reused to ensure registration margin without involving a high-resolution process. A contact hole requires solely a minimum diameter of 0.30 .mu.m or thereabouts, thereby resulting in and added margin for the minimum diameter and eliminating a process for reducing a hole diameter. Even if the hole diameter has a deviation of about 0.05 .mu.m, contact can be established with a silicon substrate, thereby eliminating a necessity for an expensive, high precision stepper which has been required for ensuring a registration margin. A damaged layer, which would otherwise cause an increase in the resistance of the storage node direct contact, is eliminated simultaneously with etching of a thick polysilicon film, thus eliminating a chemical dry etching (CDE) process which has conventionally been used for removing a damaged layer.

摘要翻译： 一种半导体器件制造方法，其采用较少数量的制造工艺，并且通过采用简化的工艺流程来消除昂贵的高精度步进器和半色调掩模等的使用，其中相同的掩模被重复使用以确保 注册保证金不涉及高分辨率的过程。 接触孔仅需要0.30μm左右的最小直径，从而导致并增加最小直径的余量，并消除减小孔直径的工艺。 即使孔径具有约0.05μm的偏差，也可以与硅衬底建立接触，从而不需要为确保配准余量而需要的昂贵的高精度步进器。 否则会导致存储节点直接接触的电阻增加的损坏层与蚀刻厚多晶硅膜同时消除，从而消除了传统上用于去除损坏的化学干蚀刻（CDE）工艺 层。

公开(公告)号：US5302538A

公开(公告)日：1994-04-12

申请号：US65327

申请日：1993-05-21

申请人： Eiichi Ishikawa ,  Takayuki Saito ,  Shinya Watanabe

发明人： Eiichi Ishikawa ,  Takayuki Saito ,  Shinya Watanabe

IPC分类号： G03F7/09 ,  H01L21/027 ,  H01L21/033 ,  H01L21/28 ,  H01L21/306 ,  H01L21/336 ,  H01L21/8242 ,  H01L29/423 ,  H01L29/43 ,  H01L29/49 ,  H01L29/78

CPC分类号： H01L27/10852 ,  G03F7/091 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/28061 ,  H01L21/28123 ,  Y10S438/95 ,  Y10S438/952

摘要： When exposure light reaches a silicon oxide film, this light is multiply reflected in the silicon oxide film to spread or narrow a photoresist layer. A tungsten silicide film prevents the exposure light from reaching the silicon oxide film. This silicon oxide film is employed as a mask to selectively remove a polycrystalline silicon film and a tungsten silicide film by etching for forming a gate electrode, while the tungsten silicide film is simultaneously removed by this etching.

摘要翻译： 当曝光光到达氧化硅膜时，该光被多次反射在氧化硅膜中以使光致抗蚀剂层扩散或变窄。 硅化钨膜防止曝光光到达氧化硅膜。 该氧化硅膜用作掩模，通过蚀刻形成栅电极来选择性去除多晶硅膜和硅化钨膜，同时通过该蚀刻同时去除硅化钨膜。

公开(公告)号：US5234796A

公开(公告)日：1993-08-10

申请号：US727110

申请日：1991-07-09

申请人： Kazuhiro Shimura ,  Masafumi Uehara ,  Akira Nogami ,  Shinya Watanabe

发明人： Kazuhiro Shimura ,  Masafumi Uehara ,  Akira Nogami ,  Shinya Watanabe

IPC分类号： G03F7/00 ,  G03F7/32

CPC分类号： G03F7/322

摘要： A developing solution of an imagewise exposed, presensitized offset printing plate is disclosed. The developing solution has a pH of at least 12.5, and contains a low content of a silicate in an amount of up to 1.0 wt % as SiO.sub.2, a surfactant in an amount of 0.01 to 10 wt %, an aromatic carboxylic acid in an amount of 0.1 to 10 wt %, and an amine compound represented by the following general formula (I) in an amount of 0.1 to 10 wt %:R.sub.1 --N(R.sub.2)--J--OH (I)wherein R.sub.1 and R.sub.2 are each independently a hydrogen atom, a group --C.sub.2 H.sub.4 OH or a group --C.sub.3 H.sub.6 OH; and J is a group --C.sub.2 H.sub.4 -- or --C.sub.3 H.sub.6 --.