公开(公告)号：US09299941B2

公开(公告)日：2016-03-29

申请号：US13348246

申请日：2012-01-11

Applicant: Ji Youl Lee ,  Jong-Won Chung ,  Jeong-il Park ,  Byung-Wook Yoo ,  Yong-Wan Jin ,  Sang-Yoon Lee

Inventor： Ji Youl Lee ,  Jong-Won Chung ,  Jeong-il Park ,  Byung-Wook Yoo ,  Yong-Wan Jin ,  Sang-Yoon Lee

IPC: H01L51/30 ,  H01L51/10 ,  H01L51/05

CPC classification number: H01L51/105 ,  H01L51/0525 ,  H01L51/0545

Abstract: An organic semiconductor device includes an organic semiconductor, an electrode electrically connected to the organic semiconductor, and a self-assembled monolayer positioned between the organic semiconductor and the electrode, the self-assembled monolayer including a monomer having an anchor group at one end and an ionic functional group at another end.

Abstract translation: 有机半导体器件包括有机半导体，电连接到有机半导体的电极和位于有机半导体和电极之间的自组装单层，该自组装单层包括在一端具有锚定基团的单体和 离子官能团。

公开(公告)号：US09245779B2

公开(公告)日：2016-01-26

申请号：US13565943

申请日：2012-08-03

Applicant: Myung-kwan Ryu ,  Jong-baek Seon ,  Sang-yoon Lee

Inventor： Myung-kwan Ryu ,  Jong-baek Seon ,  Sang-yoon Lee

IPC: B05D3/02 ,  H01L21/67

CPC classification number: H01L21/6715 ,  H01L21/67098 ,  Y10T428/24942 ,  Y10T428/265

Abstract: A method of preparing a thin film includes coating a thin film-forming composition on a substrate, and heat-treating the coated thin film-forming composition under a pressure less than 760 Torr. The thin film includes a compact layer having a thickness in a range of greater than 50 Å to about 20,000 Å and a refractive index in a range of about 1.85 to about 2.0.

Abstract translation: 制备薄膜的方法包括在基材上涂覆薄膜形成组合物，并在低于760托的压力下对涂覆的薄膜形成组合物进行热处理。 该薄膜包括厚度在大于大至大约20,000范围内的折射率在约1.85至约2.0范围内的致密层。

公开(公告)号：US08946789B2

公开(公告)日：2015-02-03

申请号：US13295620

申请日：2011-11-14

Applicant: Sun-kook Kim ,  Woong Choi ,  Sang-yoon Lee

Inventor： Sun-kook Kim ,  Woong Choi ,  Sang-yoon Lee

IPC: H01L29/76 ,  H01L29/06 ,  H01L29/10 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/775 ,  H01L29/786 ,  H01L51/00 ,  H01L51/05 ,  H01L51/42

CPC classification number: H01L29/0673 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/1029 ,  H01L29/1033 ,  H01L29/775 ,  H01L29/78648 ,  H01L29/78696 ,  H01L51/0048 ,  H01L51/0554 ,  H01L51/0558 ,  H01L51/0562 ,  H01L51/0579 ,  H01L51/424 ,  Y02E10/549 ,  Y02P70/521

Abstract: An example embodiment relates to a transistor including a channel layer. A channel layer of the transistor may include a plurality of unit layers spaced apart from each other in a vertical direction. Each of the unit layers may include a plurality of unit channels spaced apart from each other in a horizontal direction. The unit channels in each unit layer may form a stripe pattern. Each of the unit channels may include a plurality of nanostructures. Each nanostructure may have a nanotube or nanowire structure, for example a carbon nanotube (CNT).

Abstract translation: 示例性实施例涉及包括沟道层的晶体管。 晶体管的沟道层可以包括在垂直方向上彼此间隔开的多个单位层。 每个单元层可以包括在水平方向上彼此间隔开的多个单位通道。 每个单元层中的单位通道可以形成条纹图案。 每个单位通道可以包括多个纳米结构。 每个纳米结构可以具有纳米管或纳米线结构，例如碳纳米管（CNT）。

公开(公告)号：US20140093997A1

公开(公告)日：2014-04-03

申请号：US13633640

申请日：2012-10-02

Applicant: Jong Won CHUNG ,  Bon Won KOO ,  Zhenan BAO ,  Gaurav GIRI ,  Sang-yoon LEE ,  Yong-wan JIN

Inventor： Jong Won CHUNG ,  Bon Won KOO ,  Zhenan BAO ,  Gaurav GIRI ,  Sang-yoon LEE ,  Yong-wan JIN

IPC: H01L51/40

CPC classification number: H01L51/0014 ,  H01L21/02282 ,  H01L51/0003 ,  H01L51/0007 ,  H01L51/0012 ,  H01L51/0028

Abstract: A method of manufacturing an organic semiconductor thin film includes coating an organic semiconductor solution on a substrate, and shearing the organic semiconductor solution in a direction that results in a shearing stress being applied to the organic semiconductor solution to form the organic semiconductor thin film, wherein a speed of the shearing is controlled such that an intermolecular distance of the organic semiconductor solution is adjusted.

公开(公告)号：US08476636B2

公开(公告)日：2013-07-02

申请号：US12314212

申请日：2008-12-05

Applicant: Myung-kwan Ryu ,  Kyung-bae Park ,  Sang-yoon Lee ,  Jang-yeon Kwon ,  Byung-wook Yoo ,  Tae-sang Kim ,  Kyung-seok Son ,  Ji-sim Jung

Inventor： Myung-kwan Ryu ,  Kyung-bae Park ,  Sang-yoon Lee ,  Jang-yeon Kwon ,  Byung-wook Yoo ,  Tae-sang Kim ,  Kyung-seok Son ,  Ji-sim Jung

IPC: H01L29/76 ,  H01L31/036 ,  H01L31/112 ,  H01L27/01 ,  H01L27/12

CPC classification number: H01L29/78624 ,  H01L29/66765

Abstract: Provided may be a Poly-Si thin film transistor (TFT) and a method of manufacturing the same. The Poly-Si TFT may include a first Poly-Si layer on an active layer formed of Poly-Si and doped with a low concentration; and a second Poly-Si layer on the first Poly-Si layer and doped with the same concentration as the first Poly-Si layer or with a higher concentration than the first Poly-Si layer, wherein lightly doped drain (LDD) regions capable of reducing leakage current may be formed in inner end portions of the first Poly-Si layer.

Abstract translation: 提供可以是多晶硅薄膜晶体管（TFT）及其制造方法。 多晶硅TFT可以包括由多晶硅形成并掺杂低浓度的有源层上的第一多晶硅层; 和在第一多晶硅层上掺杂与第一多晶硅层相同的浓度或具有比第一多晶硅层更高的浓度的第二多晶硅层，其中能够 可以在第一多晶硅层的内端部形成减少漏电流。

公开(公告)号：US08426055B2

公开(公告)日：2013-04-23

申请号：US12408274

申请日：2009-03-20

Applicant: Dukhyun Choi ,  Sang Yoon Lee ,  Jaeyoung Choi ,  Hansu Kim ,  Sangwoo Kim

Inventor： Dukhyun Choi ,  Sang Yoon Lee ,  Jaeyoung Choi ,  Hansu Kim ,  Sangwoo Kim

IPC: H01M6/42

CPC classification number: H01M10/0445 ,  H01M6/42 ,  H01M2010/0495 ,  Y10T29/43 ,  Y10T29/49108 ,  Y10T29/49115

Abstract: An apparatus for storing energy may include: a plurality of nanowire cells electrically connected to each other; and a storage for storing electrical energy generated from the nanowire cells. Each of the plurality of nanowire cells may include: first and second electrodes disposed at an interval; and a nanowire, which is disposed between the first and the second electrodes and made of a piezoelectric material. The plurality of nanowire cells may be electrically connected, so that voltage or current may be increased. Therefore, wireless recharging of the storage connected to the nanowire cells with electrical energy may be enabled.

Abstract translation: 用于存储能量的装置可以包括：彼此电连接的多个纳米线单元; 以及用于存储从纳米线单元产生的电能的存储器。 多个纳米线单元中的每一个可以包括：以间隔设置的第一和第二电极; 和纳米线，其设置在第一和第二电极之间并由压电材料制成。 多个纳米线电池可以电连接，从而可以增加电压或电流。 因此，可以实现利用电能连接到纳米线单元的存储器的无线再充电。

公开(公告)号：US08394668B2

公开(公告)日：2013-03-12

申请号：US13064466

申请日：2011-03-28

Applicant: Jong-Baek Seon ,  Myung-Kwan Ryu ,  Kyung-Bae Park ,  Sang-Yoon Lee ,  Bon-Won Koo

Inventor： Jong-Baek Seon ,  Myung-Kwan Ryu ,  Kyung-Bae Park ,  Sang-Yoon Lee ,  Bon-Won Koo

IPC: H01L21/00

CPC classification number: H01L29/12 ,  H01L31/1884 ,  Y02E10/50 ,  Y10T428/24975

Abstract: Oxide thin film, electronic devices including the oxide thin film and methods of manufacturing the oxide thin film, the methods including (A) applying an oxide precursor solution comprising at least one of zinc (Zn), indium (In) and tin (Sn) on a substrate, (B) heat-treating the oxide precursor solution to form an oxide layer, and (C) repeating the steps (A) and (B) to form a plurality of the oxide layers.

公开(公告)号：US08383467B2

公开(公告)日：2013-02-26

申请号：US13564082

申请日：2012-08-01

Applicant: Byung-wook Yoo ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

Inventor： Byung-wook Yoo ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

IPC: H01L21/00 ,  H01L21/84

CPC classification number: H01L29/78696 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L29/66765

Abstract: A thin film transistor (TFT) and a method of manufacturing the same are provided, the TFT including a gate insulating layer on a gate. A channel may be formed on a portion of the gate insulating layer corresponding to the gate. A metal material may be formed on a surface of the channel. The metal material crystallizes the channel. A source and a drain may contact side surfaces of the channel.

Abstract translation: 提供薄膜晶体管（TFT）及其制造方法，TFT在栅极上包括栅极绝缘层。 可以在对应于栅极的栅极绝缘层的一部分上形成沟道。 可以在通道的表面上形成金属材料。 金属材料使通道结晶。 源极和漏极可以接触通道的侧表面。

公开(公告)号：US08373161B2

公开(公告)日：2013-02-12

申请号：US13346119

申请日：2012-01-09

Applicant: Do Hwan Kim ,  Hyun Sik Moon ,  Byung Wook Yoo ,  Sang Yoon Lee ,  Bang Lin Lee ,  Jeong Il Park ,  Eun Jeong Jeong

Inventor： Do Hwan Kim ,  Hyun Sik Moon ,  Byung Wook Yoo ,  Sang Yoon Lee ,  Bang Lin Lee ,  Jeong Il Park ,  Eun Jeong Jeong

IPC: H01L35/24 ,  H01L51/00

CPC classification number: H01L51/0533

Abstract: Disclosed herein are a method for fabricating an organic thin film transistor, including treating the surfaces of a gate insulating layer and source/drain electrodes with a self-assembled monolayer (SAM)-forming compound through a one-pot reaction, and an organic thin film transistor fabricated by the method. According to example embodiments, the surface-treatment of the gate insulating layer and the source/drain electrodes may be performed in a single vessel through a single process.

Abstract translation: 本文公开了一种用于制造有机薄膜晶体管的方法，包括通过一锅反应用自组装单层（SAM）形成化合物处理栅极绝缘层和源极/漏极的表面，以及有机薄膜 通过该方法制造的薄膜晶体管。 根据示例实施例，栅极绝缘层和源极/漏极的表面处理可以通过单个工艺在单个容器中进行。

公开(公告)号：US08367771B2

公开(公告)日：2013-02-05

申请号：US12379146

申请日：2009-02-13

Applicant: Jung Han Shin ,  Jae Jun Lee ,  Chang Ju Kim ,  Sang Yoon Lee

Inventor： Jung Han Shin ,  Jae Jun Lee ,  Chang Ju Kim ,  Sang Yoon Lee

IPC: C07F7/08

CPC classification number: C08G77/58 ,  C08L83/14 ,  H01L51/052 ,  H01L51/0525 ,  C08L2666/02

Abstract: A composition for producing an organic insulator is provided which comprises an organic-inorganic hybrid material (as defined). The hybrid material shows high solubility in organic solvents and monomers, and superior adhesion to substrates. In addition, the hybrid material displays a high dielectric constant and a high degree of crosslinking. Based on these advantages, the composition comprising the organic-inorganic hybrid material can be utilized during the fabrication of various electronic devices by a wet process. A method for producing the organic insulator while utilizing the composition also is provided, as well as the resulting organic insulator, and an organic thin film transistor which incorporates the resulting insulating layer.