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254 条记录 (耗时 0.057 秒)

    Anisotropic nanotube fabric layers and films and methods of forming same
    112.
    发明授权
    Anisotropic nanotube fabric layers and films and methods of forming same 有权
    各向异性纳米管织物层和膜及其形成方法

    公开(公告)号：US08574673B2

    公开(公告)日：2013-11-05

    申请号：US12533704

    申请日：2009-07-31

    申请人： Thomas Rueckes ,  Ramesh Sivarajan ,  Rahul Sen

    发明人： Thomas Rueckes ,  Ramesh Sivarajan ,  Rahul Sen

    IPC分类号： B05D1/02 ,  B05D1/18

    CPC分类号： H01L51/0022 ,  B05D1/202 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/158 ,  H01B1/24 ,  H01L51/0048 ,  H05K3/125 ,  H05K2201/026 ,  H05K2201/0323 ,  H05K2203/105

    摘要： Methods for forming anisotropic nanotube fabrics are disclosed. In one aspect, a nanotube application solution is rendered into a nematic state prior to its application over a substrate. In another aspect, a pump and narrow nozzle assembly are employed to realize a flow induced alignment of a plurality of individual nanotube elements as they are deposited onto a substrate element. In another aspect, nanotube adhesion promoter materials are used to form a patterned nanotube application layer, providing narrow channels over which nanotube elements will self align during an application process. Specific dip coating processes which are well suited for aiding in the creation of anisotropic nanotube fabrics are also disclosed.

    摘要翻译： 公开了形成各向异性纳米管织物的方法。 在一个方面，纳米管应用溶液在其施加于基底之前呈现向列状态。 在另一方面，当泵和窄喷嘴组件被沉积到衬底元件上时，实现多个单独的纳米管元件的流动诱导对准。 在另一方面，纳米管粘附促进剂材料用于形成图案化纳米管应用层，提供窄通道，纳米管元件在施加过程中将自动对准。 还公开了非常适合于辅助制备各向异性纳米管织物的特定浸涂方法。

    Methods for passivating a carbonic nanolayer
    113.
    发明授权
    Methods for passivating a carbonic nanolayer 有权
    钝化碳纳米层的方法

    公开(公告)号：US08551806B2

    公开(公告)日：2013-10-08

    申请号：US12910714

    申请日：2010-10-22

    申请人： Thomas Rueckes ,  H. Montgomery Manning ,  Rahul Sen

    发明人： Thomas Rueckes ,  H. Montgomery Manning ,  Rahul Sen

    IPC分类号： H01L51/40 ,  H01L21/20

    CPC分类号： B82Y30/00 ,  G11C2213/16 ,  H01L27/101

    摘要： Methods for passivating a carbonic nanolayer (that is, material layers comprised of low dimensional carbon structures with delocalized electrons such as carbon nanotubes and nano-scopic graphene flecks) to prevent or otherwise limit the encroachment of another material layer are disclosed. In some embodiments, a sacrificial material is implanted within a porous carbonic nanolayer to fill in the voids within the porous carbonic nanolayer while one or more other material layers are applied over or alongside the carbonic nanolayer. Once the other material layers are in place, the sacrificial material is removed. In other embodiments, a non-sacrificial filler material (selected and deposited in such a way as to not impair the switching function of the carbonic nanolayer) is used to form a barrier layer within a carbonic nanolayer. In other embodiments, carbon structures are combined with and nanoscopic particles to limit the porosity of a carbonic nanolayer.

    摘要翻译： 公开了用于钝化碳纳米层（即，由具有诸如碳纳米管和纳米表面石墨烯斑点的离域电子的低维碳结构构成的材料层）以防止或以其它方式限制另一材料层的侵蚀的方法。 在一些实施方案中，将牺牲材料注入多孔碳纳米层​​内以填充多孔碳纳米层​​内的空隙，同时将一种或多种其它材料层涂覆在碳纳米层上或旁边。 一旦其它材料层就位，则去除牺牲材料。 在其它实施方案中，使用非牺牲填料（以不损害碳纳米层的切换功能的方式选择和沉积）在碳纳米层内形成阻挡层。 在其它实施方案中，碳结构与纳米级颗粒结合以限制碳纳米层的孔隙率。

    Method of making sensor platform using a non-horizontally oriented nanotube element
    114.
    发明授权
    Method of making sensor platform using a non-horizontally oriented nanotube element 有权
    使用非水平取向的纳米管元件制造传感器平台的方法

    公开(公告)号：US08357559B2

    公开(公告)日：2013-01-22

    申请号：US12469402

    申请日：2009-05-20

    申请人： Brent M. Segal ,  Thomas Rueckes ,  Bernhard Vogeli ,  Darren K. Brock ,  Venkatachalam C. Jaiprakash ,  Claude L. Bertin

    发明人： Brent M. Segal ,  Thomas Rueckes ,  Bernhard Vogeli ,  Darren K. Brock ,  Venkatachalam C. Jaiprakash ,  Claude L. Bertin

    IPC分类号： H01L21/00

    CPC分类号： G01N27/4146 ,  B82Y15/00 ,  G11C13/025 ,  Y10S977/902 ,  Y10S977/904 ,  Y10S977/92 ,  Y10S977/921 ,  Y10S977/922 ,  Y10S977/924 ,  Y10T29/43 ,  Y10T29/49082

    摘要： Sensor platforms and methods of making them are described. A platform having a non-horizontally oriented sensor element comprising one or more nanostructures such as nanotubes is described. Under certain embodiments, a sensor element has or is made to have an affinity for an analyte. Under certain embodiments, such a sensor element comprises one or more pristine nanotubes. Under certain embodiments, the sensor element comprises derivatized or functionalized nanotubes. Under certain embodiments, a sensor is made by providing a support structure; providing one or more nanotubes on the structure to provide material for a sensor element; and providing circuitry to electrically sense the sensor element's electrical characterization. Under certain embodiments, the sensor element comprises pre-derivatized or pre-functionalized nanotubes. Under other embodiments, sensor material is derivatized or functionalized after provision on the structure or after patterning. Under certain embodiments, a large-scale array of sensor platforms includes a plurality of sensor elements.

    摘要翻译： 介绍传感器平台及其制作方法。 描述了具有包括一个或多个纳米结构如纳米管的非水平定向的传感器元件的平台。 在某些实施方案中，传感器元件具有或被制成对分析物具有亲和性。 在某些实施例中，这种传感器元件包括一个或多个原始纳米管。 在某些实施方案中，传感器元件包括衍生的或功能化的纳米管。 在某些实施例中，通过提供支撑结构来制造传感器; 在所述结构上提供一个或多个纳米管以提供用于传感器元件的材料; 以及提供用于电感测传感器元件电特性的电路。 在某些实施方案中，传感器元件包括预衍生的或预功能化的纳米管。 在其它实施例中，传感器材料在结构上提供之后或在图案化之后被衍生化或功能化。 在某些实施例中，传感器平台的大规模阵列包括多个传感器元件。

    Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
    119.
    发明授权
    Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same 有权
    非挥发性纳米管二极管和非易失性纳米管块及使用其的系统及其制造方法

    公开(公告)号：US07782650B2

    公开(公告)日：2010-08-24

    申请号：US11835845

    申请日：2007-08-08

    申请人： Claude L. Bertin ,  Thomas Rueckes ,  X. M. Henry Huang ,  Ramesh Sivarajan ,  Eliodor G. Ghenciu ,  Steven L. Konsek ,  Mitchell Meinhold ,  Jonathan W. Ward ,  Darren K. Brock

    发明人： Claude L. Bertin ,  Thomas Rueckes ,  X. M. Henry Huang ,  Ramesh Sivarajan ,  Eliodor G. Ghenciu ,  Steven L. Konsek ,  Mitchell Meinhold ,  Jonathan W. Ward ,  Darren K. Brock

    IPC分类号： G11C11/00

    CPC分类号： H01L27/1021 ,  G11C2213/19 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/1203 ,  Y10S977/943

    摘要： Under one aspect, a memory array includes word lines; bit lines; memory cells; and a memory operation circuit. Each memory cell responds to electrical stimulus on a word line and on a bit line and includes: a two-terminal non-volatile nanotube switching device having first and second terminals, a semiconductor diode element, and a nanotube fabric article capable of multiple resistance states. The semiconductor diode and nanotube article are between and in electrical communication with the first and second terminals, which are coupled to the word line bit line respectively. The operation circuit selects cells by activating bit and/or word lines, detects a resistance state of the nanotube fabric article of a selected memory cell, and adjusts electrical stimulus applied to the cell to controllably induce a selected resistance state in the nanotube fabric article. The selected resistance state corresponds to an informational state of the memory cell.

    摘要翻译： 在一个方面，存储器阵列包括字线; 位线 记忆细胞; 和存储器操作电路。 每个存储器单元响应于字线和位线上的电刺激，并且包括：具有第一和第二端子的二端非易失性纳米管开关器件，半导体二极管元件和能够具有多个电阻状态的纳米管织物制品 。 半导体二极管和纳米管制品分别与第一和第二端子电连接，并且与第一和第二端子电连接，它们分别耦合到字线位线。 操作电路通过激活位和/或字线来选择单元，检测所选择的存储单元的纳米管织物的电阻状态，并调整施加到单元的电刺激以可控制地引起纳米管织物制品中选定的电阻状态。 选择的电阻状态对应于存储单元的信息状态。

    ISOLATED METAL PLUG PROCESS FOR USE IN FABRICATING CARBON NANOTUBE MEMORY CELLS
    120.
    发明申请
    ISOLATED METAL PLUG PROCESS FOR USE IN FABRICATING CARBON NANOTUBE MEMORY CELLS 失效
    用于制备碳纳米管存储器细胞的隔离金属压片方法

    公开(公告)号：US20100148277A1

    公开(公告)日：2010-06-17

    申请号：US12710477

    申请日：2010-02-23

    申请人： Richard J. Carter ,  Peter A. Burke ,  Verne C. Hornback ,  Thomas Rueckes ,  Claude L. Bertin

    发明人： Richard J. Carter ,  Peter A. Burke ,  Verne C. Hornback ,  Thomas Rueckes ,  Claude L. Bertin

    IPC分类号： H01L27/112

    CPC分类号： H01H1/0094 ,  Y10S977/724 ,  Y10S977/732 ,  Y10S977/943

    摘要： The present invention is directed to structures and methods of fabricating electromechanical memory cells having nanotube crossbar elements. Such memory cells include a substrate having transistor with a contact that electrically contacts with the transistor. A first support layer is formed over the substrate with an opening that defines a lower chamber above the electrical contact. A nanotube crossbar element is arranged to span the lower chamber. A second support layer is formed with an opening that defines a top chamber above the lower chamber, the top chamber including an extension region that extends beyond an edge of the lower chamber to expose a portion of the top surface of the first support layer. A roof layer covers the top of the top chamber and includes an aperture that exposes a portion of the extension region of the top chamber and includes a plug that extends into the aperture in the roof layer to seal the top and bottom chambers. The memory cell further includes an electrode that overlies the crossbar element such that electrical signals can activate the electrode to attract or repel the crossbar element to set a memory state for the transistor.

    摘要翻译： 本发明涉及制造具有纳米管横杆元件的机电存储器单元的结构和方法。 这种存储单元包括具有与晶体管电接触的接触的晶体管的衬底。 第一支撑层形成在衬底上，其开口限定了电触点上方的下腔室。 纳米管横杆元件布置成跨越下室。 第二支撑层形成有开口，所述开口限定在所述下腔室上方的顶部腔室，所述顶部腔室包括延伸超出所述下部腔室的边缘以暴露所述第一支撑层的顶部表面的一部分的延伸区域。 屋顶层覆盖顶部室的顶部，并且包括露出顶部室的延伸区域的一部分并且包括延伸到顶部层中的孔中以密封顶部和底部室的插塞的孔。 存储单元还包括覆盖在横杆元件上的电极，使得电信号可以激活电极以吸引或排斥交叉开关元件以设置晶体管的存储状态。