Abstract:
A method for manufacturing a multilayer ceramic substrate includes a firing step wherein low-temperature-sinterable ceramic material contained in green base layers and inorganic material contained in green constraining layers chemically react each other, whereby a reaction layer is formed along an interface between the green base layer and the green constraining layer. The reaction layer acts to enhance a bonding force between the green base layer and the green constraining layer.
Abstract:
There is disclosed a composition for a ceramic substrate comprising a mixture of: powdered borosilicate-based glass comprising about 5% to 17.5% by weight of B2O3, about 28% to 44% by weight of SiO2, 0% to about 20% by weight of Al2O3, and about 36% to 50% by weight of MO (where MO is at least one selected from the group consisting of CaO, MgO, and BaO), and a powdered ceramic; in which the amount of the powdered borosilicate-based glass is about 40% to 49% by weight based on the total amount of the composition for a ceramic substrate, and the amount of the powdered ceramic is about 60% to 51% by weight based on the total amount of the composition for a ceramic substrate.
Abstract translation:公开了一种用于陶瓷基材的组合物,其包含以下混合物:粉末状硼硅酸盐玻璃,其包含约5%至17.5%重量的B 2 O 3,约28%至44%重量的SiO 2,0重量%至约20重量% 的Al 2 O 3和约36〜50重量%的MO(其中MO是选自CaO,MgO和BaO中的至少一种)和陶瓷粉末; 其中基于陶瓷基材的组合物的总量,硼硅酸玻璃粉末的量为约40重量%至49重量%,并且粉末状陶瓷的量为约60重量%至51重量% 关于陶瓷基材的组合物的总量。
Abstract:
A medical puncturing device for a so-called indwelling needle, includes: an indwelling needle composed of an indwelling outer needle element of a soft synthetic resin capillary tube and a puncturing inner needle element of a metallic capillary tube fitted through the outer needle element; and an outer sleeve for incorporating the indwelling needle. The indwelling needle has a projected part on the periphery at the rear end thereof while the outer sleeve has a guide slot cut along the axial direction on the peripheral surface thereof. The projected part is fitted through the guide slot and can move forward and backward so as to project and retract the indwelling needle with respect to the front side of the outer sleeve. The device further has locking arrangements in the front and rear ends of the guide slot so as to keep the indwelling needle at the projected and retracted positions.
Abstract:
Provided is a crystalline glass composition for use in a circuit board that can be sintered at a temperature of 1100° C. and is endowed with favorable characteristics such as a relative dielectric constant of as low as ½ and a thermal expansion coefficient of as high as 12 ppm/° C. as an electrical insulating insulator for use in a circuit board. The crystalline glass composition contains SiO2, MgO and CaO, the composition ratio of SiO2, MgO and CaO in % by weight falling within an area surrounded by the lines connecting the points A (25, 45, 30), B (25, 0, 75), C (44, 0, 56), D (44, 22, 34), E (40, 19, 41) and F (29, 40, 31) in a ternary phase diagram wherein at least one melwinite, monticellite or calcium silicate crystalline phase is deposited by heat-treating the composition. A ceramic powder having a thermal expansion coefficient of about 6.0 ppm/C or more is sometimes added in the powder comprising the glass composition.
Abstract:
There is provided a piezoelectric ceramic having a small mechanical factor of merit Qm and excellent heat-resisting properties, e.g., a piezoelectric ceramic for filter elements which is compatible with surface mounting and a method of manufacturing the same in a large amount and in a stable manner. There is provided a piezoelectric ceramic which is a composite oxide of at least lead, zirconium and titanium, wherein an oxide of manganese exists in a grain boundary layer in a density higher than that in a crystal grain of the piezoelectric ceramic and a glass phase exists in the grain boundary layer. It is manufactured by depositing a manganese compound and a glass material on the surface of a piezoelectric ceramic comprising a composite oxide of at least lead, zirconium and titanium and by performing thermal processing thereafter to diffuse the deposited substance in a grain boundary portion of the piezoelectric ceramic.
Abstract:
Disclosed herein is a magnetostatic wave device that employs a single-crystal thin film of the formula Y.sub.3-x M.sub.x Fe.sub.5-y N.sub.Y O.sub.12 (where M denotes at least one member selected from La, Bi, Lu, and Gd, N denotes at least one member selected from Al, In, and Sc, and x and y are defined as 0
Abstract:
Piezoelectric ceramics whose mechanical quality factor Qm is small and which has an excellent heat resistance, e.g. piezoelectric ceramics for filtering elements whose group delay time characteristic is flat, phase distortion is small and which can be accommodated to surface mounting, and a method for stably producing it are provided. Manganese oxide and lead oxide are caused to coexist in high concentration in grain boundary parts of the piezoelectric ceramics containing composite oxides of at least lead, zirconium and titanium as compared to intra-crystal grains of the piezoelectric ceramics. It is manufactured by treating the piezoelectric ceramics by heat after adhering manganese and lead compounds on the surface thereof to diffuse the oxides in the grain boundary parts of the piezoelectric ceramics.
Abstract:
The present invention provides a lead niobate piezoelectric ceramic composition useful for a piezoelectric ceramic element employable at a high temperature, such as a piezoelectric ceramic sensor, which is burned in air and which has a Curie temperature of over 400.degree. C. The piezoelectric ceramic composition contains as a main component a ceramic composition having a tungsten bronze type crystal structure and represented by the formula (Pb.sub.1-(a+b+c) A1.sub.2a A2.sub.b A3.sub.2c/3).sub.x (Nb.sub.1-(d+e+f+g) B1.sub.5d/3 B2.sub.5e/4 B3.sub.f B4.sub.5g/6).sub.y O.sub.3y-.delta. wherein A1 indicates a monovalent metallic element, A2 indicates a divalent metallic element, A3 and B1 each indicate a trivalent metallic element, B2 indicates a tetravalent metallic element, B3 indicates a pentavalent metallic element, B4 indicates a hexavalent metallic element, .delta. indicates a defect amount, and a, b, c, d, e, f, g, x and y satisfy the following relations: each of a through g.gtoreq.0, 0.015
Abstract translation:本发明提供了一种用于可在高温下使用的压电陶瓷元件的铌酸铅压电陶瓷组合物,例如在空气中燃烧并且具有超过400℃的居里温度的压电陶瓷传感器。压电陶瓷组合物 以(Pb1-(a + b + c)A12aA2bA32c / 3)x(Nb1-(d + e + f + g))B15d / 3B25e为代表的具有钨青铜型晶体结构的陶瓷组合物 / 4B3fB45g / 6)yO3y-delta其中A1表示一价金属元素,A2表示二价金属元素,A3和B1各自表示三价金属元素,B2表示四价金属元素,B3表示五价金属元素,B4表示 六价金属元素,δ表示缺陷量,a,b,c,d,e,f,g,x和y满足以下关系:a〜g> / = 0,0.015
Abstract:
Engine control system for an engine equipped with a variable valve timing mechanism for altering intake valve duration delivers the amount of fuel required every engine cycle through leading and trailing injection, the duration times of which are complementarily altered according to changes in intake valve duration.
Abstract:
A memory cell structure with the reduced number of bit line contacts, contributing to high integration and high reliability of a DRAM is provided. Each of memory cells (M1, M2, M3, M4) of the DRAM includes a field effect transistor and a capacitor (I, II, III, IV) connected thereto. The field effect transistor constituting each of the memory cells has a combination of two gates: a transfer gate (A) of a low Vth and a sub-transfer gate (a) of a high Vth, a transfer gate (B) of a high Vth and a sub-transfer gate (b) of a low Vth, a transfer gate (C) of a high Vth and a sub-transfer gate (c) of a low Vth, and a transfer gate (D) of a low Vth and a sub-transfer gate (d) of a high Vth. The four memory cells share a bit line contact.