中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

331 records (took 0.037 seconds)

    SEMICONDUCTOR DEVICE
    112.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20150123716A1

    公开(公告)日：2015-05-07

    申请号：US14594256

    申请日：2015-01-12

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Atsushi Umezaki

    IPC: H03K17/687 ,  G09G3/36 ,  G09G3/32

    CPC classification number: H01L27/1255 ,  G09G3/14 ,  G09G3/32 ,  G09G3/36 ,  G09G2300/0426 ,  G09G2310/0286 ,  G09G2330/021 ,  G11C19/00 ,  H01L29/7869 ,  H03B1/00 ,  H03K3/00 ,  H03K17/6871

    Abstract: Provided is a semiconductor device exemplified by an inverter circuit and a shift register circuit, which is characterized by a reduced number of transistors. The semiconductor device includes a first transistor, a second transistor, and a capacitor. One of a source and a drain of the first transistor is electrically connected to a first wiring, and the other thereof is electrically connected to a second wiring. One of a source and a drain of the second transistor is electrically connected to the first wiring, a gate of the second transistor is electrically connected to a gate of the first transistor, and the other of the source and the drain of the second transistor is electrically connected to one electrode of the capacitor, while the other electrode of the capacitor is electrically connected to a third wiring. The first and second transistors have the same conductivity type.

    Abstract translation: 提供一种半导体器件，其特征在于晶体管数量减少的逆变器电路和移位寄存器电路。 半导体器件包括第一晶体管，第二晶体管和电容器。 第一晶体管的源极和漏极之一电连接到第一布线，另一个电连接到第二布线。 第二晶体管的源极和漏极之一电连接到第一布线，第二晶体管的栅极电连接到第一晶体管的栅极，第二晶体管的源极和漏极的另一个是 电连接到电容器的一个电极，而电容器的另一个电极电连接到第三布线。 第一和第二晶体管具有相同的导电类型。

    Display device including at least six transistors
    113.
    发明授权
    Display device including at least six transistors 有权

    公开(公告)号：US08994028B2

    公开(公告)日：2015-03-31

    申请号：US14072878

    申请日：2013-11-06

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Atsushi Umezaki

    IPC: G09G3/36 ,  H01L27/105 ,  G11C19/28 ,  H01L27/12 ,  G02F1/1362 ,  H01L27/13 ,  H01L29/423 ,  H01L29/786

    Abstract: By applying an AC pulse to a gate of a transistor which easily deteriorates, a shift in threshold voltage of the transistor is suppressed. However, in a case where amorphous silicon is used for a semiconductor layer of a transistor, the occurrence of a shift in threshold voltage naturally becomes a problem for a transistor which constitutes a part of circuit that generates an AC pulse. A shift in threshold voltage of a transistor which easily deteriorates and a shift in threshold voltage of a turned-on transistor are suppressed by signal input to a gate electrode of the transistor which easily deteriorates through the turned-on transistor. In other words, a structure for applying an AC pulse to a gate electrode of a transistor which easily deteriorates through a transistor to a gate electrode of which a high potential (VDD) is applied, is included.

    Display device including at least six transistors
    114.
    发明授权
    Display device including at least six transistors 有权

    公开(公告)号：US08952388B2

    公开(公告)日：2015-02-10

    申请号：US14072878

    申请日：2013-11-06

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Atsushi Umezaki

    IPC: G09G3/36 ,  H01L27/105 ,  G11C19/28 ,  H01L27/12 ,  G02F1/1362 ,  H01L27/13 ,  H01L29/423 ,  H01L29/786

    Abstract: By applying an AC pulse to a gate of a transistor which easily deteriorates, a shift in threshold voltage of the transistor is suppressed. However, in a case where amorphous silicon is used for a semiconductor layer of a transistor, the occurrence of a shift in threshold voltage naturally becomes a problem for a transistor which constitutes a part of circuit that generates an AC pulse. A shift in threshold voltage of a transistor which easily deteriorates and a shift in threshold voltage of a turned-on transistor are suppressed by signal input to a gate electrode of the transistor which easily deteriorates through the turned-on transistor. In other words, a structure for applying an AC pulse to a gate electrode of a transistor which easily deteriorates through a transistor to a gate electrode of which a high potential (VDD) is applied, is included.

    Liquid crystal display device and electronic device
    116.
    发明授权
    Liquid crystal display device and electronic device 有权

    公开(公告)号：US08860462B2

    公开(公告)日：2014-10-14

    申请号：US13675066

    申请日：2012-11-13

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Atsushi Umezaki

    IPC: H03K19/0175

    Abstract: To provide a circuit used for a shift register or the like. The basic configuration includes first to fourth transistors and four wirings. The power supply potential VDD is supplied to the first wiring and the power supply potential VSS is supplied to the second wiring. A binary digital signal is supplied to each of the third wiring and the fourth wiring. An H level of the digital signal is equal to the power supply potential VDD, and an L level of the digital signal is equal to the power supply potential VSS. There are four combinations of the potentials of the third wiring and the fourth wiring. Each of the first transistor to the fourth transistor can be turned off by any combination of the potentials. That is, since there is no transistor that is constantly on, deterioration of the characteristics of the transistors can be suppressed.

    SEMICONDUCTOR DEVICE
    118.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20140247070A1

    公开(公告)日：2014-09-04

    申请号：US14250623

    申请日：2014-04-11

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Atsushi Umezaki

    IPC: H03K17/081

    CPC classification number: H01L27/1255 ,  G02F1/1368 ,  G02F1/167 ,  G09G3/20 ,  G09G3/3225 ,  G09G3/344 ,  G09G3/3648 ,  G09G3/3688 ,  G09G2300/0426 ,  G09G2300/0819 ,  G09G2300/0876 ,  G09G2310/0286 ,  G09G2320/043 ,  G09G2330/021 ,  G11C19/184 ,  G11C19/28 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/3244 ,  H01L29/7869 ,  H03K3/356 ,  H03K17/08104 ,  H03K19/018521

    Abstract: Provided is a semiconductor device which can operate stably even in the case where a transistor thereof is a depletion transistor. The semiconductor device includes a first transistor for supplying a first potential to a first wiring, a second transistor for supplying a second potential to the first wiring, a third transistor for supplying a third potential at which the first transistor is turned on to a gate of the first transistor and stopping supplying the third potential, a fourth transistor for supplying the second potential to the gate of the first transistor, and a first circuit for generating a second signal obtained by offsetting a first signal. The second signal is input to a gate of the fourth transistor. The potential of a low level of the second signal is lower than the second potential.

    Abstract translation: 提供了即使在其晶体管是耗尽晶体管的情况下也能够稳定地工作的半导体器件。 半导体器件包括用于向第一布线提供第一电位的第一晶体管，向第一布线提供第二电位的第二晶体管，提供第一晶体管导通的第三电位的第三晶体管， 第一晶体管并且停止提供第三电位，用于将第二电位提供给第一晶体管的栅极的第四晶体管和用于产生通过抵消第一信号而获得的第二信号的第一电路。 第二信号被输入到第四晶体管的栅极。 低电平的第二信号的电位低于第二电位。

    SEMICONDUCTOR DEVICE AND ELECTRONIC APPLIANCE
    120.
    发明申请
    SEMICONDUCTOR DEVICE AND ELECTRONIC APPLIANCE 有权
    半导体器件和电子器件

    公开(公告)号：US20140117351A1

    公开(公告)日：2014-05-01

    申请号：US14147647

    申请日：2014-01-06

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Jun Koyama ,  Atsushi Umezaki

    IPC: H01L27/12

    CPC classification number: G09G3/3677 ,  G09G2310/0251 ,  G09G2310/0286 ,  G09G2310/0289 ,  G09G2330/021 ,  G11C19/00 ,  H01L27/0207 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/7869 ,  H03K17/687 ,  H03K19/0013 ,  H03K19/018557 ,  H03K19/018571

    Abstract: The amplitude voltage of a signal input to a level shifter can be increased and then output by the level shifter circuit. Specifically, the amplitude voltage of the signal input to the level shifter can be increased to be output. This decreases the amplitude voltage of a circuit (a shift register circuit, a decoder circuit, or the like) which outputs the signal input to the level shifter. Consequently, power consumption of the circuit can be reduced. Alternatively, a voltage applied to a transistor included in the circuit can be reduced. This can suppress degradation of the transistor or damage to the transistor.

    Abstract translation: 可以增加输入到电平移位器的信号的幅度电压，然后由电平移位器电路输出。 具体地，可以增加输入到电平移位器的信号的幅度电压以输出。 这降低了将输入到电平移位器的信号输出的电路（移位寄存器电路，解码器电路等）的振幅电压。 因此，可以降低电路的功耗。 或者，可以减小施加到电路中包括的晶体管的电压。 这可以抑制晶体管的劣化或对晶体管的损坏。

Patent Agency Ranking