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    SEMICONDUCTOR DEVICE
    111.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号：US20140167041A1

    公开(公告)日：2014-06-19

    申请号：US14187830

    申请日：2014-02-24

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Keitaro IMAI

    IPC: H01L29/786

    CPC classification number: H01L29/7869 ,  H01L21/84 ,  H01L27/0688 ,  H01L27/1207 ,  H01L27/1225

    Abstract: An objet of the present invention is to provide a semiconductor device with a new structure. Disclosed is a semiconductor device including a first transistor which includes a channel formation region on a substrate containing a semiconductor material, impurity regions formed with the channel formation region interposed therebetween, a first gate insulating layer over the channel formation region, a first gate electrode over the first gate insulating layer, and a first source electrode and a first drain electrode which are electrically connected to the impurity region; and a second transistor which includes a second gate electrode over the substrate containing a semiconductor material, a second gate insulating layer over the second gate electrode, an oxide semiconductor layer over the second gate insulating layer, and a second source electrode and a second drain electrode which are electrically connected to the oxide semiconductor layer.

    Abstract translation: 本发明的目的是提供一种具有新结构的半导体器件。 公开了一种半导体器件，包括：第一晶体管，其在包含半导体材料的衬底上包括沟道形成区域，形成有沟道形成区域的杂质区域，沟道形成区域上的第一栅极绝缘层， 所述第一栅极绝缘层以及与所述杂质区电连接的第一源电极和第一漏电极; 以及第二晶体管，其在包含半导体材料的衬底上方包括第二栅极电极，在第二栅极电极上方的第二栅极绝缘层，在第二栅极绝缘层上方的氧化物半导体层，以及第二源极电极和第二漏极电极 其电连接到氧化物半导体层。

    METHOD FOR DRIVING LIQUID CRYSTAL DISPLAY DEVICE
    113.
    发明申请
    METHOD FOR DRIVING LIQUID CRYSTAL DISPLAY DEVICE 审中-公开
    驱动液晶显示装置的方法

    公开(公告)号：US20140078132A1

    公开(公告)日：2014-03-20

    申请号：US14089025

    申请日：2013-11-25

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Jun KOYAMA ,  Hiroyuki MIYAKE

    IPC: G09G3/36

    CPC classification number: G09G3/3618 ,  G02F1/1345 ,  G06F3/0416 ,  G06F3/0421 ,  G06F3/044 ,  G09G3/3648 ,  G09G3/3655 ,  G09G3/3696 ,  G09G2300/0809 ,  G09G2310/04 ,  G09G2310/061 ,  G09G2310/08 ,  G09G2320/0209 ,  G09G2320/0219 ,  G09G2320/10 ,  G09G2320/103 ,  G09G2330/021 ,  G09G2340/0435 ,  G09G2340/16 ,  G09G2354/00

    Abstract: The liquid crystal display device includes a first substrate provided with a terminal portion, a switching transistor, a driver circuit portion, and a pixel circuit portion including a pixel transistor and a plurality of pixels, a second substrate provided with a common electrode electrically connected to the terminal portion through the switching transistor, and liquid crystal between a pixel electrode and the common electrode. In a period during which a still image is switched to a moving image, the following steps are sequentially performed: a first step of supplying the common potential to the common electrode; a second step of supplying a power supply voltage to the driver circuit portion; a third step of supplying a clock signal to the driver circuit portion; and a fourth step of supplying a start pulse signal to the driver circuit portion.

    Abstract translation: 液晶显示装置包括具有端子部分的第一基板，开关晶体管，驱动电路部分和包括像素晶体管和多个像素的像素电路部分，第二基板设置有电连接到 通过开关晶体管的端子部分和像素电极与公共电极之间的液晶。 在将静止图像切换为运动图像的期间中，依次执行以下步骤：将公共电位提供给公共电极的第一步骤; 向驱动电路部供给电源电压的第2工序; 向所述驱动电路部提供时钟信号的第三步骤; 以及向所述驱动器电路部分提供起始脉冲信号的第四步骤。

    SEMICONDUCTOR DEVICE
    115.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号：US20130292671A1

    公开(公告)日：2013-11-07

    申请号：US13939223

    申请日：2013-07-11

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Kiyoshi KATO

    IPC: H01L27/088

    CPC classification number: H01L27/088 ,  G11C11/404 ,  G11C11/405 ,  G11C16/02 ,  H01L27/0207 ,  H01L27/1052 ,  H01L27/115 ,  H01L27/11517 ,  H01L27/1156 ,  H01L27/1225

    Abstract: It is an object to provide a semiconductor having a novel structure. In the semiconductor device, a plurality of memory elements are connected in series and each of the plurality of memory elements includes first to third transistors thus forming a memory circuit. A source or a drain of a first transistor which includes an oxide semiconductor layer is in electrical contact with a gate of one of a second and a third transistor. The extremely low off current of a first transistor containing the oxide semiconductor layer allows storing, for long periods of time, electrical charges in the gate electrode of one of the second and the third transistor, whereby a substantially permanent memory effect can be obtained. The second and the third transistors which do not contain an oxide semiconductor layer allow high-speed operations when using the memory circuit.

    Abstract translation: 本发明的目的是提供具有新颖结构的半导体。 在半导体器件中，多个存储器元件串联连接，并且多个存储元件中的每一个包括第一至第三晶体管，从而形成存储器电路。 包括氧化物半导体层的第一晶体管的源极或漏极与第二和第三晶体管之一的栅极电接触。 含有氧化物半导体层的第一晶体管的极低的截止电流允许长时间地在第二和第三晶体管之一的栅电极中存储电荷，由此可以获得基本上永久的记忆效应。 不含氧化物半导体层的第二和第三晶体管在使用存储电路时允许高速操作。

    SPONTANEOUS LIGHT EMITTING DEVICE AND DRIVING METHOD THEREOF
    116.
    发明申请
    SPONTANEOUS LIGHT EMITTING DEVICE AND DRIVING METHOD THEREOF 审中-公开
    自发光发光装置及其驱动方法

    公开(公告)号：US20130193858A1

    公开(公告)日：2013-08-01

    申请号：US13802853

    申请日：2013-03-14

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Jun KOYAMA

    IPC: G09G3/30

    CPC classification number: G09G3/30 ,  G09G3/2022 ,  G09G3/3233 ,  G09G3/3275 ,  G09G2300/0809 ,  G09G2300/0842 ,  G09G2320/0233 ,  G09G2320/0257 ,  G09G2320/0285 ,  G09G2320/029 ,  G09G2320/043 ,  G09G2320/048 ,  G09G2360/18

    Abstract: A counter 102 counts the accumulated lighting time or the accumulated lighting time and the intensity of lighting of each pixel by a first image signal 101A and stores them in a volatile memory 103 or a nonvolatile memory 104. A correction circuit 105 corrects the first image signal based on the correction data stored previously in a correction data storage section 106 in accordance with the degree of the degradation of each spontaneous light emitting element by the use of the accumulated lighting time or the accumulated lighting time and the intensity of lighting, and produces a second mage signal 101B. By the second image signal 101B, a display unit 107 can provide a uniform screen having no variation in luminance even if the light emitting elements in a part of the pixels are degraded.

    Abstract translation: 计数器102通过第一图像信号101A对累积的点亮时间或累积的点亮时间和每个像素的点亮强度进行计数，并将其存储在易失性存储器103或非易失性存储器104中。校正电路105校正第一图像信号 根据先前存储在校正数据存储部分106中的校正数据，根据累积的点亮时间或累积的点亮时间和照明强度，根据每个自发发光元件的劣化程度， 第二法师信号101B。 通过第二图像信号101B，即使像素的一部分中的发光元件劣化，显示单元107也可以提供没有亮度变化的均匀屏幕。

    SEMICONDUCTOR DEVICE
    117.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20130119380A1

    公开(公告)日：2013-05-16

    申请号：US13733518

    申请日：2013-01-03

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Jun KOYAMA ,  Shunpei YAMAZAKI

    IPC: H01L29/786 ,  H01L31/09

    CPC classification number: H01L27/1225 ,  H01L27/102 ,  H01L27/1203 ,  H01L27/1214 ,  H01L27/14612 ,  H01L27/14616 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14643 ,  H01L29/78693 ,  H01L31/095 ,  H04N5/37457

    Abstract: A solid-state image sensor which holds a potential for a long time and includes a thin film transistor with stable electrical characteristics is provided. When the off-state current of a thin film transistor including an oxide semiconductor layer is set to 1×10−13 A or less and the thin film transistor is used as a reset transistor and a transfer transistor of the solid-state image sensor, the potential of the signal charge storage portion is kept constant, so that a dynamic range can be improved. When a silicon semiconductor which can be used for a complementary metal oxide semiconductor is used for a peripheral circuit, a high-speed semiconductor device with low power consumption can be manufactured.

    Abstract translation: 提供了一种长时间保持电位且包括具有稳定电特性的薄膜晶体管的固态图像传感器。 当包括氧化物半导体层的薄膜晶体管的截止电流设定为1×10-13A或更低，并且薄膜晶体管用作固态图像传感器的复位晶体管和传输晶体管时， 信号电荷存储部分的电位保持恒定，从而可以提高动态范围。 当将可用于互补金属氧化物半导体的硅半导体用于外围电路时，可以制造具有低功耗的高速半导体器件。

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