公开(公告)号：US07683289B2

公开(公告)日：2010-03-23

申请号：US11303729

申请日：2005-12-16

申请人： Rajinder Dhindsa ,  Felix Kozakevich ,  Lumin Li ,  Dave Trussell

发明人： Rajinder Dhindsa ,  Felix Kozakevich ,  Lumin Li ,  Dave Trussell

IPC分类号： B23K10/00 ,  C23C16/00 ,  H01L21/306

CPC分类号： H01J37/32082 ,  H01J37/32174

摘要： A number of RF power transmission paths are defined to extend from an RF power source through a matching network, through a transmit electrode, through a plasma to a number of return electrodes. A number of tuning elements are respectively disposed within the number of RF power transmission paths. Each tuning element is defined to adjust an amount of RF power to be transmitted through the RF power transmission path within which the tuning element is disposed. A plasma density within a vicinity of a particular RF power transmission path is directly proportional to the amount of RF power transmitted through the particular RF power transmission path. Therefore, adjustment of RF power transmitted through the RF power transmission paths, as afforded by the tuning element, enables control of a plasma density profile across a substrate.

摘要翻译： 多个RF功率传输路径被定义为从RF电源通过匹配网络，通过发射电极，等离子体延伸到多个返回电极。 多个调谐元件分别设置在RF功率传输路径的数量内。 每个调谐元件被定义为调整要通过设置调谐元件的RF功率传输路径传输的RF功率的量。 特定RF功率传输路径附近的等离子体密度与通过特定RF功率传输路径传输的RF功率的量成正比。 因此，由调谐元件提供的通过RF功率传输路径传输的RF功率的调整能够控制跨越衬底的等离子体密度分布。

公开(公告)号：US20100000683A1

公开(公告)日：2010-01-07

申请号：US12216525

申请日：2008-07-07

申请人： Babak Kadkhodayan ,  Rajinder Dhindsa ,  Anthony de la Llera ,  Michael C. Kellogg

发明人： Babak Kadkhodayan ,  Rajinder Dhindsa ,  Anthony de la Llera ,  Michael C. Kellogg

IPC分类号： H01L21/3065 ,  H01L21/306

CPC分类号： H01J37/3244 ,  H01J37/32449

摘要： A showerhead electrode includes inner and outer steps at an outer periphery thereof, the outer step cooperating with a clamp ring which mechanically attaches the electrode to a backing plate.

摘要翻译： 淋浴头电极在其外周边包括内台阶和外台阶，外台阶与夹板环配合，该夹环将电极机械地附接到背板。

公开(公告)号：US20090305509A1

公开(公告)日：2009-12-10

申请号：US12155739

申请日：2008-06-09

申请人： Tom Stevenson ,  Rajinder Dhindsa

发明人： Tom Stevenson ,  Rajinder Dhindsa

IPC分类号： H01L21/3065 ,  C23C16/44 ,  H01L21/30

CPC分类号： H01L21/3065 ,  C23C16/45565 ,  C23C16/52 ,  H01J37/32091 ,  H01J37/32532 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32605 ,  H01L21/67069

摘要： Showerhead electrode assemblies are disclosed, which include a showerhead electrode adapted to be mounted in an interior of a vacuum chamber; an optional backing plate attached to the showerhead electrode; a thermal control plate attached to the backing plate or to the showerhead electrode at multiple contact regions across the backing plate; and at least one interface member separating the backing plate and the thermal control plate, or the thermal control plate and showerhead electrode, at the contact regions, the interface member having a thermally and electrically conductive gasket portion and a particle mitigating seal portion. Methods of processing semiconductor substrates using the showerhead electrode assemblies are also disclosed.

摘要翻译： 公开了一种喷头电极组件，其包括适于安装在真空室内部的喷头电极; 连接到喷头电极的可选背板; 热控制板，其在跨过所述背板的多个接触区域附接到所述背板或所述喷头电极; 以及至少一个界面构件，其在所述接触区域处分离所述背板和所述热控制板或所述热控制板和喷头电极，所述界面构件具有导热和导电的垫圈部分和颗粒减轻密封部分。 还公开了使用喷头电极组件处理半导体衬底的方法。

公开(公告)号：US20090174983A1

公开(公告)日：2009-07-09

申请号：US12405906

申请日：2009-03-17

申请人： Rajinder Dhindsa ,  Eric Lenz ,  Lumin Li ,  Felix Kozakevich

发明人： Rajinder Dhindsa ,  Eric Lenz ,  Lumin Li ,  Felix Kozakevich

IPC分类号： H01L21/683

CPC分类号： H01L21/6833 ,  H02N13/00

摘要： An electrostatic chuck assembly having a dielectric material and/or having a cavity with varying thickness, profile and/or shape is disclosed. The electrostatic chuck assembly includes a conductive support and an electrostatic chuck ceramic layer. A dielectric layer or insert is located between the conductive support and an electrostatic chuck ceramic layer. A cavity is located in a seating surface of the electrostatic chuck ceramic layer. An embedded pole pattern can be optionally incorporated in the electrostatic chuck assembly. Methods of manufacturing the electrostatic chuck assembly are disclosed as are methods to improve the uniformity of a flux field above a workpiece during a plasma processing process.

摘要翻译： 公开了具有介电材料和/或具有变化的厚度，型材和/或形状的空腔的静电卡盘组件。 静电卡盘组件包括导电支架和静电卡盘陶瓷层。 电介质层或插入件位于导电支架和静电卡盘陶瓷层之间。 空腔位于静电卡盘陶瓷层的座面上。 可以可选地将嵌入式极图案并入静电卡盘组件中。 公开了制造静电卡盘组件的方法，是在等离子体处理过程中改进工件上方的磁通场的均匀性的方法。

公开(公告)号：US07455748B2

公开(公告)日：2008-11-25

申请号：US10600191

申请日：2003-06-20

申请人： Douglas L. Keil ,  Lumin Li ,  Eric A. Hudson ,  Reza Sadjadi ,  Eric H. Lenz ,  Rajinder Dhindsa ,  Ji Soo Kim

发明人： Douglas L. Keil ,  Lumin Li ,  Eric A. Hudson ,  Reza Sadjadi ,  Eric H. Lenz ,  Rajinder Dhindsa ,  Ji Soo Kim

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00

CPC分类号： H01J37/3266 ,  H01J37/32431 ,  H01J37/32623

摘要： A plasma processing apparatus for processing a substrate is provided. A plasma processing chamber with chamber walls is provided. A substrate support is provided within the chamber walls. At least one confinement ring is provided, where the confinement ring and the substrate support define a plasma volume. A magnetic source for generating a magnetic field for magnetically enhancing physical confinement provided by the at least one confinement ring is provided.

摘要翻译： 提供了一种用于处理衬底的等离子体处理装置。 提供具有室壁的等离子体处理室。 在室壁内提供衬底支撑件。 提供至少一个限制环，其中限制环和衬底支撑件限定等离子体体积。 提供了一种用于产生用于磁力增强由至少一个限制环提供的物理限制的磁场的磁源。

公开(公告)号：US20080160776A1

公开(公告)日：2008-07-03

申请号：US11618583

申请日：2006-12-29

申请人： Rajinder Dhindsa ,  Hudson Eric ,  Alexei Marakhtanov

发明人： Rajinder Dhindsa ,  Hudson Eric ,  Alexei Marakhtanov

IPC分类号： H01L21/461

CPC分类号： H01J37/32165 ,  H01J37/32091

摘要： A method and apparatus for processing a substrate in a capacitively-coupled plasma processing system having a plasma processing chamber and at least an upper electrode and a lower electrode. The substrate is disposed on the lower electrode during plasma processing. The method includes providing at least a first RF signal, which has a first RF frequency, to the lower electrode. The first RF signal couples with a plasma in the plasma processing chamber, thereby inducing an induced RF signal on the upper electrode. The method also includes providing a second RF signal to the upper electrode. The second RF signal also has the first RF frequency. A phase of the second RF signal is offset from a phase of the first RF signal by a value that is less than 10%. The method further includes processing the substrate while the second RF signal is provided to the upper electrode.

摘要翻译： 一种用于在具有等离子体处理室和至少上电极和下电极的电容耦合等离子体处理系统中处理衬底的方法和装置。 在等离子体处理期间，衬底设置在下电极上。 该方法包括向下电极提供至少具有第一RF频率的第一RF信号。 第一RF信号与等离子体处理室中的等离子体耦合，从而在上电极上感应感应RF信号。 该方法还包括向上电极提供第二RF信号。 第二RF信号也具有第一RF频率。 第二RF信号的相位偏离第一RF信号的相位小于10％的值。 该方法还包括在将第二RF信号提供给上电极的同时处理衬底。

公开(公告)号：US20080006205A1

公开(公告)日：2008-01-10

申请号：US11456545

申请日：2006-07-10

申请人： Douglas Keil ,  Lumin Li ,  Reza Sadjadi ,  Eric Hudson ,  Eric Lenz ,  Rajinder Dhindsa

发明人： Douglas Keil ,  Lumin Li ,  Reza Sadjadi ,  Eric Hudson ,  Eric Lenz ,  Rajinder Dhindsa

IPC分类号： C23F1/00 ,  C23C16/00

CPC分类号： H01J37/32183 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32532

摘要： An apparatus is provided for semiconductor wafer plasma processing. The apparatus includes a chamber having a lower electrode and an upper electrode disposed therein. The lower electrode is defined to transmit a radiofrequency current through the chamber to generate a plasma within the chamber. The upper electrode is disposed above the lower electrode and is electrically isolated from the chamber. A voltage source is connected to the upper electrode. The voltage source is defined to control an electric potential of the upper electrode relative to the chamber. The electric potential of the upper electrode as controlled by the voltage source is capable of influencing an electric potential of the plasma to be generated between the lower and upper electrodes.

摘要翻译： 提供了一种用于半导体晶片等离子体处理的装置。 该装置包括具有下电极和设置在其中的上电极的腔室。 下电极被定义为传输射频电流通过腔室以在腔室内产生等离子体。 上电极设置在下电极的上方，并与腔电隔离。 电压源连接到上电极。 电压源被定义为控制上电极相对于腔室的电位。 由电压源控制的上电极的电位能够影响在下电极和上电极之间产生的等离子体的电位。

公开(公告)号：US07276135B2

公开(公告)日：2007-10-02

申请号：US10855707

申请日：2004-05-28

申请人： Rajinder Dhindsa ,  Felix Kozakevich ,  Dave Trussell

发明人： Rajinder Dhindsa ,  Felix Kozakevich ,  Dave Trussell

IPC分类号： C23F1/00

CPC分类号： H01J37/32174 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32935 ,  H01J37/3299

摘要： A plasma processor chamber includes a bottom electrode and a top electrode assembly having a center electrode surrounded by a grounded electrode. RF excited plasma between the electrodes induces a DC bias on them. A measure of the bottom electrode DC bias controls the capacitance of a first series resonant circuit connected between the center electrode and ground. A measure of the center electrode DC bias controls the capacitance of a second series resonant circuit connected between the bottom electrode and ground.

摘要翻译： 等离子体处理器室包括底电极和顶电极组件，其具有被接地电极包围的中心电极。 电极之间的RF激发等离子体在其上引起DC偏压。 底部电极直流偏置的测量控制连接在中心电极和地之间的第一串联谐振电路的电容。 中心电极直流偏压的测量控制连接在底电极和地之间的第二串联谐振电路的电容。

公开(公告)号：US20070186855A1

公开(公告)日：2007-08-16

申请号：US11355458

申请日：2006-02-15

申请人： Rajinder Dhindsa

发明人： Rajinder Dhindsa

IPC分类号： B08B6/00 ,  C23F1/00 ,  C23C16/00

CPC分类号： H01J37/321 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32642 ,  H01J37/32862

摘要： Broadly speaking, the embodiments of the present invention provide an improved chamber cleaning mechanism, apparatus and method. The present invention can also be used to provide additional knobs to tune the etch processes. In one embodiment, a plasma processing chamber configured to generate a plasma includes a bottom electrode assembly with an inner bottom electrode and an outer bottom electrode disposed outside of the inner bottom electrode, wherein the inner bottom electrode is configured to receive a substrate. The plasma processing chamber also includes a top electrode assembly with a top electrode, wherein the top capacitive electrode is disposed directly above the inner and outer bottom electrodes.

摘要翻译： 广义而言，本发明的实施例提供了一种改进的室清洁机构，装置和方法。 本发明还可以用于提供附加的旋钮来调整蚀刻工艺。 在一个实施例中，构造成产生等离子体的等离子体处理室包括底部电极组件，其具有设置在内部底部电极外部的内部底部电极和外部底部电极，其中内部底部电极构造成接收衬底。 等离子体处理室还包括具有顶部电极的顶部电极组件，其中顶部电容电极直接设置在内部和外部底部电极的上方。

公开(公告)号：US20060043067A1

公开(公告)日：2006-03-02

申请号：US10925923

申请日：2004-08-26

申请人： Babak Kadkhodayan ,  Rajinder Dhindsa ,  Yuehong Fu

发明人： Babak Kadkhodayan ,  Rajinder Dhindsa ,  Yuehong Fu

IPC分类号： H01L21/306 ,  B44C1/22

CPC分类号： C04B35/505 ,  C04B2235/725 ,  C04B2235/728 ,  C04B2235/77 ,  C04B2235/9692 ,  H01J37/32642 ,  H01J2237/0206 ,  Y10T29/4973

摘要： A yttria insulator ring for use in a plasma processing apparatus is provided to minimize arcing between the apparatus and a ground extension, while also increasing a mean time between cleanings (MTBC). The yttria insulator ring may be located between a ground extension and a plasma generation zone, or gap, of the chamber of the apparatus, as well as between an edge ring and the ground extension. Compared to a quartz ring, the yttria insulator ring can also provide improved semiconductor substrate uniformity because of improved RF coupling as a result of decreased reactivity and increased dielectric constant.