公开(公告)号：US20230369341A1

公开(公告)日：2023-11-16

申请号：US18137032

申请日：2023-04-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masahiro TAKAHASHI ,  Takuya HIROHASHI ,  Masashi TSUBUKU ,  Noritaka ISHIHARA ,  Masashi OOTA

IPC: H01L27/12 ,  G02F1/1368 ,  C23C14/08 ,  H01L29/66 ,  H01L29/786 ,  H01L29/24 ,  H01L29/04 ,  G01N23/207 ,  H01L21/66 ,  H01L21/02

CPC classification number: H01L27/1225 ,  G02F1/1368 ,  C23C14/086 ,  H01L29/66969 ,  H01L29/78693 ,  H01L29/7869 ,  H01L29/24 ,  H01L29/04 ,  G01N23/207 ,  H01L22/12 ,  H01L2924/0002 ,  H01L21/0237 ,  H01L21/02631 ,  H01L21/02422 ,  H01L21/02565 ,  H01L21/02554

Abstract: A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nmφ and less than or equal to 10 nmφ.

公开(公告)号：US20230327073A1

公开(公告)日：2023-10-12

申请号：US18203085

申请日：2023-05-30

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Teruaki OCHIAI ,  Takahiro KAWAKAMI ,  Mayumi MIKAMI ,  Yohei MOMMA ,  Masahiro TAKAHASHI ,  Ayae TSURUTA

IPC: H01M4/131 ,  H01M4/1315 ,  H01M4/1391 ,  H01M4/62 ,  H01M4/13915 ,  H01M4/134 ,  H01M4/36 ,  H01M4/525 ,  H01M4/86

CPC classification number: H01M4/131 ,  H01M4/1315 ,  H01M4/1391 ,  H01M4/625 ,  H01M4/13915 ,  H01M4/134 ,  H01M4/366 ,  H01M4/525 ,  H01M4/8657 ,  H01M2004/021

Abstract: A positive electrode active material which can improve cycle characteristics of a secondary battery is provided. Two kinds of regions are provided in a superficial portion of a positive electrode active material such as lithium cobaltate which has a layered rock-salt crystal structure. The inner region is a non-stoichiometric compound containing a transition metal such as titanium, and the outer region is a compound of representative elements such as magnesium oxide. The two kinds of regions each have a rock-salt crystal structure. The inner layered rock-salt crystal structure and the two kinds of regions in the superficial portion are topotaxy; thus, a change of the crystal structure of the positive electrode active material generated by charging and discharging can be effectively suppressed. In addition, since the outer coating layer in contact with an electrolyte solution is the compound of representative elements which is chemically stable, the secondary battery having excellent cycle characteristics can be obtained.

公开(公告)号：US20230155032A1

公开(公告)日：2023-05-18

申请号：US17910372

申请日：2021-03-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Tetsuya KAKEHATA ,  Yasuhiro JINBO ,  Yuji EGI ,  Fumito ISAKA ,  Shuntaro KOCHI ,  Masahiro TAKAHASHI

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/24 ,  H01L29/66969

Abstract: A semiconductor device with a small variation in characteristics is provided. The semiconductor device includes an oxide, a first conductor and a second conductor over the oxide, a first insulator over the first conductor, a second insulator over the second conductor, a third insulator over the first insulator and the second insulator, a fourth insulator over the third insulator, a fifth insulator that is over the oxide and is located between the first conductor and the second conductor; a sixth insulator over the fifth insulator; a seventh insulator over the sixth insulator, and a third conductor over the seventh insulator. The third conductor includes a region overlapping with the oxide, the fifth insulator has a region that is in contact with each of the oxide, the first conductor, the second conductor, and the first to fourth insulators, and the sixth insulator contains hydrogen, nitrogen, oxygen, and silicon.

公开(公告)号：US20220336616A1

公开(公告)日：2022-10-20

申请号：US17852429

申请日：2022-06-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masahiro TAKAHASHI ,  Tomoki HIRAMATSU

IPC: H01L29/49 ,  H01L29/66 ,  H01L29/786 ,  H01L29/04 ,  H01L21/02

Abstract: A stack with excellent electrical characteristics and reliability is provided. The stack includes an insulator, a conductor, and a first oxide between the insulator and the conductor; the first oxide includes a first c-axis-aligned crystal region; and a c-axis of the first crystal region is substantially perpendicular to a plane of the first oxide on the insulator side. Alternatively, the stack includes an insulator, a conductor, a first oxide between the insulator and the conductor, and a second oxide facing the first oxide with the insulator therebetween; the first oxide includes a first c-axis-aligned crystal region; a c-axis of the first crystal region is substantially perpendicular to a plane of the first oxide on the insulator side; the second oxide includes a second c-axis-aligned crystal region; and a c-axis of the second crystal region is substantially perpendicular to a plane of the second oxide on the insulator side.

公开(公告)号：US20210320209A1

公开(公告)日：2021-10-14

申请号：US17272400

申请日：2019-08-29

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masahiro TAKAHASHI ,  Naoki OKUNO ,  Tomosato KANAGAWA ,  Shota MIZUKAMI

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/66

Abstract: A highly reliable semiconductor device with favorable electrical characteristics is provided. The semiconductor device includes a first insulator; a first conductor and a second conductor over the first insulator; an oxide provided between the first conductor and the second conductor; a second insulator over the first conductor, the second conductor, and the oxide; and a third conductor over the second insulator. A side surface of the first conductor includes a region in contact with one side surface of the oxide, a side surface of the second conductor includes a region in contact with the other side surface of the oxide. The level of a top surface of the first conductor, the level of a top surface of the second conductor, and the level of a top surface of the oxide arc substantially the same. The conductivity of the first conductor is higher than that of the oxide, and the conductivity of the second conductor is higher than that of the oxide.

公开(公告)号：US20210249538A1

公开(公告)日：2021-08-12

申请号：US17242410

申请日：2021-04-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masahiro TAKAHASHI ,  Kengo AKIMOTO ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L29/04 ,  C01G15/00 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/02 ,  H01L27/12 ,  H01L29/24 ,  H01L29/66

Abstract: To provide an oxide semiconductor film having stable electric conductivity and a highly reliable semiconductor device having stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film contains indium (In), gallium (Ga), and zinc (Zn) and includes a c-axis-aligned crystalline region aligned in the direction parallel to a normal vector of a surface where the oxide semiconductor film is formed. Further, the composition of the c-axis-aligned crystalline region is represented by In1+δGa1−δO3(ZnO)m (0

公开(公告)号：US20190207033A1

公开(公告)日：2019-07-04

申请号：US16295365

申请日：2019-03-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Motoki NAKASHIMA ,  Masahiro TAKAHASHI

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/417 ,  H01L29/36 ,  H01L29/06 ,  H01L29/24 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/0692 ,  H01L29/24 ,  H01L29/36 ,  H01L29/41733 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78693

Abstract: A highly reliable semiconductor device and a method for manufacturing the semiconductor device are provided. The semiconductor device is manufactured with a high yield, so that high productivity is achieved. In a semiconductor device including a transistor in which a source electrode layer and a drain electrode layer are provided over and in contact with an oxide semiconductor film, entry of impurities and formation of oxygen vacancies in an end face portion of the oxide semiconductor film are suppressed. This can prevent fluctuation in the electric characteristics of the transistor which is caused by formation of a parasitic channel in the end face portion of the oxide semiconductor film.

公开(公告)号：US20190189949A1

公开(公告)日：2019-06-20

申请号：US16283962

申请日：2019-02-25

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Satoko SHITAGAKI ,  Satoshi SEO ,  Nobuharu OHSAWA ,  Hideko INOUE ,  Masahiro TAKAHASHI ,  Kunihiko SUZUKI

IPC: H01L51/50 ,  H01L51/00 ,  H01L51/52 ,  C09K11/02 ,  C09K11/06 ,  H05B33/14

CPC classification number: H01L51/5016 ,  C09K11/025 ,  C09K11/06 ,  C09K2211/1007 ,  C09K2211/1044 ,  C09K2211/185 ,  H01L51/0052 ,  H01L51/0056 ,  H01L51/0058 ,  H01L51/006 ,  H01L51/0061 ,  H01L51/0072 ,  H01L51/0074 ,  H01L51/0085 ,  H01L51/5056 ,  H01L51/5072 ,  H01L51/5088 ,  H01L51/5092 ,  H01L51/5218 ,  H01L51/5234 ,  H01L2251/55 ,  H05B33/14

Abstract: Provided is a light-emitting element with high external quantum efficiency, or a light-emitting element with a long lifetime. The light-emitting element includes, between a pair of electrodes, a light-emitting layer including a guest material and a host material, in which an emission spectrum of the host material overlaps with an absorption spectrum of the guest material, and phosphorescence is emitted by conversion of an excitation energy of the host material into an excitation energy of the guest material. By using the overlap between the emission spectrum of the host material and the absorption spectrum of the guest material, the energy smoothly transfers from the host material to the guest material, so that the energy transfer efficiency of the light-emitting element is high. Accordingly, a light-emitting element with high external quantum efficiency can be achieved.

公开(公告)号：US20180197995A1

公开(公告)日：2018-07-12

申请号：US15911681

申请日：2018-03-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Motoki NAKASHIMA ,  Masahiro TAKAHASHI

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/423 ,  H01L29/06 ,  H01L29/417 ,  H01L29/36 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L29/0692 ,  H01L29/24 ,  H01L29/36 ,  H01L29/41733 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78693

Abstract: A highly reliable semiconductor device and a method for manufacturing the semiconductor device are provided. The semiconductor device is manufactured with a high yield, so that high productivity is achieved. In a semiconductor device including a transistor in which a source electrode layer and a drain electrode layer are provided over and in contact with an oxide semiconductor film, entry of impurities and formation of oxygen vacancies in an end face portion of the oxide semiconductor film are suppressed. This can prevent fluctuation in the electric characteristics of the transistor which is caused by formation of a parasitic channel in the end face portion of the oxide semiconductor film.

公开(公告)号：US20180175210A1

公开(公告)日：2018-06-21

申请号：US15896925

申请日：2018-02-14

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Akiharu MIYANAGA ,  Yasuharu HOSAKA ,  Toshimitsu OBONAI ,  Junichi KOEZUKA ,  Motoki NAKASHIMA ,  Masahiro TAKAHASHI ,  Shunsuke ADACHI ,  Takuya HIROHASHI

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/12 ,  H01L29/24 ,  H01L29/04 ,  H01L29/49

CPC classification number: H01L29/78606 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: In a semiconductor device using a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The semiconductor device includes a gate electrode over an insulating surface; an oxide semiconductor film overlapping with the gate electrode; a gate insulating film that is between the gate electrode and the oxide semiconductor film and in contact with the oxide semiconductor film; a protective film in contact with a surface of the oxide semiconductor film that is an opposite side of a surface in contact with the gate insulating film; and a pair of electrodes in contact with the oxide semiconductor film. The spin density of the gate insulating film or the protective film measured by electron spin resonance spectroscopy is lower than 1×1018 spins/cm3, preferably higher than or equal to 1×1017 spins/cm3 and lower than 1×1018 spins/cm3.