公开(公告)号：US07095071B2

公开(公告)日：2006-08-22

申请号：US10895074

申请日：2004-07-21

申请人： Yoshiaki Fukuzumi ,  Shigeki Takahashi

发明人： Yoshiaki Fukuzumi ,  Shigeki Takahashi

IPC分类号： H01L29/76 ,  G11C11/14

CPC分类号： H01L43/08 ,  G11C11/16 ,  H01L27/228

摘要： According to an aspect of the present invention, there is disclosed a magnetic resistive element comprising a first magnetic layer whose magnetized state changes in accordance with data, a nonmagnetic layer disposed on the first magnetic layer, and a second magnetic layer which is disposed on the nonmagnetic layer and whose magnetized state is fixed, wherein the first magnetic layer has a cross shape in which a maximum length of a first direction is L1 and a maximum length of a second direction crossing the first direction at right angles is L2, and the second magnetic layer has a tetragonal shape in which the maximum length of the first direction is L3 (≦L1) and the maximum length of the second direction is L4 (

摘要翻译： 根据本发明的一个方面，公开了一种磁阻元件，其包括磁化状态根据数据变化的第一磁性层，设置在第一磁性层上的非磁性层和设置在第一磁性层上的第二磁性层 非磁性层并且其磁化状态是固定的，其中第一磁性层具有第一方向的最大长度为L 1并且与第一方向垂直的第二方向的最大长度为L 2的十字形状，以及 第二磁性层具有第一方向的最大长度为L 3（<= L 1）且第二方向的最大长度为L 4（

公开(公告)号：US07054187B2

公开(公告)日：2006-05-30

申请号：US10981508

申请日：2004-11-05

申请人： Tatsuya Kishi ,  Minoru Amano ,  Yoshiaki Saito ,  Shigeki Takahashi ,  Katsuya Nishiyama ,  Yoshiaki Asao ,  Hiroaki Yoda ,  Tomomasa Ueda ,  Yoshihisa Iwata

发明人： Tatsuya Kishi ,  Minoru Amano ,  Yoshiaki Saito ,  Shigeki Takahashi ,  Katsuya Nishiyama ,  Yoshiaki Asao ,  Hiroaki Yoda ,  Tomomasa Ueda ,  Yoshihisa Iwata

IPC分类号： G11C11/00

CPC分类号： G11C11/16

摘要： A magnetic memory includes: a magnetoresistance effect element having a magnetic recording layer; a first writing wiring extending in a first direction on or below the magnetoresistance effect element, a center of gravity of an axial cross section of the wiring being apart from a center of thickness at the center of gravity, and the center of gravity being eccentric toward the magnetoresistance effect element; and a writing circuit configured to pass a current through the first writing wiring in order to record an information in the magnetic recording layer by a magnetic field generated by the current.

公开(公告)号：US06958932B2

公开(公告)日：2005-10-25

申请号：US10199176

申请日：2002-07-22

申请人： Keiji Hosotani ,  Yoshiaki Asao ,  Yoshiaki Saito ,  Minoru Amano ,  Shigeki Takahashi ,  Tatsuya Kishi ,  Yoshihisa Iwata

发明人： Keiji Hosotani ,  Yoshiaki Asao ,  Yoshiaki Saito ,  Minoru Amano ,  Shigeki Takahashi ,  Tatsuya Kishi ,  Yoshihisa Iwata

IPC分类号： H01L27/105 ,  H01L21/768 ,  H01L21/8246 ,  H01L27/22 ,  H01L43/08 ,  G11C17/14

CPC分类号： H01L27/228 ,  B82Y10/00 ,  H01L21/76895 ,  H01L43/08

摘要： A semiconductor integrated circuit device includes a cell transistor; a bit line provided above the cell transistor; a magnetoresistive element provided above the bit line, a first end portion of the magnetoresistive element being electrically connected to the bit line; an intracell local interconnection provided above the magnetoresistive element, the intracell local interconnection coupling one of source and drain regions of the cell transistor to a second end portion of the magnetoresistive element; and a write word line provided above the intracell local interconnection, a portion between the write word line and the intracell local interconnection being filled with an insulator alone.

摘要翻译： 半导体集成电路器件包括单元晶体管; 设置在单元晶体管上方的位线; 设置在所述位线上方的磁阻元件，所述磁阻元件的第一端部电连接到所述位线; 设置在磁阻元件上方的电池内局部互连，将电池晶体管的源极和漏极区域中的一个耦合到磁阻元件的第二端部的电池内局部互连; 以及设置在电池内局部互连之上的写入字线，写入字线和单元间局部互连之间的一部分仅用绝缘体填充。

公开(公告)号：US06949779B2

公开(公告)日：2005-09-27

申请号：US10653098

申请日：2003-09-03

申请人： Tadashi Kai ,  Shigeki Takahashi ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Yoshiaki Saito

发明人： Tadashi Kai ,  Shigeki Takahashi ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Yoshiaki Saito

IPC分类号： G01R33/09 ,  G11B5/39 ,  G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  H01L29/76

CPC分类号： G11C11/15 ,  G11C11/16 ,  Y10T428/24917

摘要： There are provided a first reference layer, in which a direction of magnetization is fixed, and a storage layer including a main body, in which a length in an easy magnetization axis direction is longer than a length in a hard magnetization axis direction, and a projecting portion provided to a central portion of the main body in the hard magnetization axis direction, a direction of magnetization of the storage layer being changeable in accordance with an external magnetic field.

公开(公告)号：US20050201027A1

公开(公告)日：2005-09-15

申请号：US11079517

申请日：2005-03-15

申请人： Yoshinori Arashima ,  Hirofumi Abe ,  Shigeki Takahashi

发明人： Yoshinori Arashima ,  Hirofumi Abe ,  Shigeki Takahashi

IPC分类号： H01L27/04 ,  H01L21/822 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/78 ,  H02H9/00 ,  H03K17/08

CPC分类号： H03K17/0822 ,  H01L27/0266 ,  H01L29/0696 ,  H01L29/7816

摘要： The semiconductor output circuit of the invention has an insulated gate transistor including a first terminal, a second terminal and a gate terminal, a conductive state of the insulated gate transistor being controlled by a drive circuit connected to the gate terminal, a capacitive element and a first resistor connected in series between the second terminal and the gate terminal, and a second resistor connected between the gate terminal and the first terminal. The insulated gate transistor has a cell area formed on a semiconductor substrate, in which a plurality of unit cells each defining a unit transistor connected between the first and second terminals are laid out. The second resistor has such a resistance that all of the unit transistors defined by the unit cells are turned on uniformly when electrostatic discharge is applied to the first or second terminal.

摘要翻译： 本发明的半导体输出电路具有包括第一端子，第二端子和栅极端子的绝缘栅极晶体管，绝缘栅极晶体管的导通状态由连接到栅极端子的驱动电路，电容元件和 第一电阻器串联连接在第二端子和栅极端子之间，第二电阻器连接在栅极端子和第一端子之间。 绝缘栅极晶体管具有形成在半导体衬底上的单元区域，其中布置了连接在第一和第二端子之间的单元晶体管的多个单位单元。 第二电阻器具有这样的电阻，即当静电放电施加到第一或第二端子时，由单电池限定的所有单位晶体管均匀地导通。

公开(公告)号：US06903460B2

公开(公告)日：2005-06-07

申请号：US10689060

申请日：2003-10-21

申请人： Yutaka Fukuda ,  Hirofumi Abe ,  Yoshinori Arashima ,  Shigeki Takahashi

发明人： Yutaka Fukuda ,  Hirofumi Abe ,  Yoshinori Arashima ,  Shigeki Takahashi

IPC分类号： H01L21/3205 ,  H01L23/482 ,  H01L23/52 ,  H01L27/02 ,  H01L27/088 ,  H01L29/06 ,  H01L29/417 ,  H01L29/78 ,  H01L23/48

CPC分类号： H01L29/7816 ,  H01L23/4824 ,  H01L29/0696 ,  H01L29/41758 ,  H01L2924/0002 ,  H01L2924/00

摘要： Semiconductor equipment includes a semiconductor substrate, a plurality of transistors having a source cell and a drain cell disposed alternately on the substrate, and upper and lower layer wirings for electrically connecting the source cells and the drain cells. The lower layer wiring includes a first source wiring for connecting the neighboring source cells and a first drain wiring for connecting the neighboring drain cells. The upper layer wiring includes a second source wiring for connecting to the first source wiring and a second drain wiring for connecting to the first drain wiring. A width of the second source wiring is wider than that of the first source wiring, and a width of the second drain wiring is wider than that of the first drain wiring. The second source wiring and the second drain wiring are disposed alternately.

摘要翻译： 半导体设备包括半导体衬底，具有交替放置在衬底上的源极单元和漏极单元的多个晶体管，以及用于电连接源极单元和漏极单元的上部和下部布线。 下层布线包括用于连接相邻源极单元的第一源极布线和用于连接相邻漏极单元的第一漏极布线。 上层布线包括用于连接到第一源极布线的第二源极布线和用于连接到第一漏极布线的第二漏极布线。 第二源极布线的宽度比第一源极布线的宽度宽，并且第二漏极布线的宽度比第一漏极布线的宽度宽。 第二源极配线和第二漏极配线交替配置。

公开(公告)号：US20050078417A1

公开(公告)日：2005-04-14

申请号：US10626707

申请日：2003-07-25

申请人： Tatsuya Kishi ,  Shigeki Takahashi ,  Kentaro Nakajima ,  Minoru Amano ,  Masayuki Sagoi ,  Yoshiaki Saito

发明人： Tatsuya Kishi ,  Shigeki Takahashi ,  Kentaro Nakajima ,  Minoru Amano ,  Masayuki Sagoi ,  Yoshiaki Saito

IPC分类号： G01R33/09 ,  G11B5/39 ,  G11C11/14 ,  G11C11/15 ,  G11C11/16 ,  H01F10/16 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  H01L43/08 ,  H01L43/12

CPC分类号： H01L27/228 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/398 ,  G11B2005/3996 ,  G11C11/16 ,  H01F10/3254 ,  H01L43/08 ,  Y10S428/90 ,  Y10T29/49043 ,  Y10T29/49048 ,  Y10T29/4905 ,  Y10T29/49052 ,  Y10T428/24942 ,  Y10T428/26 ,  Y10T428/265 ,  Y10T428/32

摘要： Magnetoresistance effect devices for attaining magnetically stability and for reducing a switching magnetic field. One of the ferromagnetic layers of the magnetoresistance effect device has a plane shape in which a width of an end portions is wider than a center portion sandwiched by two end portions. The end portions are not symmetrical with respect to an easy magnetization axis or longer axis of the plane shape of ferromagnetic material layer, but are substantially rotationally symmetrical with a center of the plane shape as a pivot. The plane shape may have an S-shape where its magnetic domain is stabilized and the switching magnetic field is reduced. The manufacturing method uses two linear mask patterns intersecting with each other to form sharp corners of a ferromagnetic tunnel junction. An electron beam (EB) drawing may be used to form the S-shape plane. The magnetoresistance effect devices may be used in a magnetic memory apparatus, such as a random access memory, a personal digital assistance, a magnetic reproducing head, and a magnetic information reproducing apparatus.

摘要翻译： 用于获得磁稳定性并用于减小开关磁场的磁阻效应器件。 磁阻效应器件的铁磁层之一具有端部的宽度比夹在两个端部的中心部分宽的平面形状。 端部相对于铁磁材料层的平面形状的易磁化轴或长轴不对称，但是以平面形状的中心作为枢轴基本上是旋转对称的。 平面形状可以具有其磁畴稳定并且开关磁场减小的S形。 该制造方法使用彼此相交的两个线性掩模图案来形成铁磁隧道结的尖角。 可以使用电子束（EB）图来形成S形平面。 磁阻效应器件可以用在诸如随机存取存储器，个人数字助听器，磁再现头和磁信息再现设备之类的磁存储设备中。

公开(公告)号：US06879475B2

公开(公告)日：2005-04-12

申请号：US10233505

申请日：2002-09-04

申请人： Tatsuya Kishi ,  Yoshiaki Saito ,  Minoru Amano ,  Shigeki Takahashi ,  Katsuya Nishiyama

发明人： Tatsuya Kishi ,  Yoshiaki Saito ,  Minoru Amano ,  Shigeki Takahashi ,  Katsuya Nishiyama

IPC分类号： G01R33/09 ,  G11B5/39 ,  G11C11/16 ,  H01F10/16 ,  H01F10/30 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  H01L43/08

CPC分类号： H01L27/228 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11C11/16 ,  H01F10/3268 ,  H01L43/08

摘要： A magnetoresistive effect element of a tunnel junction type includes a magnetic multi-layered film (1), ferromagnetic film (3) and intervening insulating film (2) such that a current flows between the magnetic multi-layered film and the ferromagnetic film, tunneling through the insulating film. The magnetic multi-layered film includes a first ferromagnetic layer, second ferromagnetic layer and anti-ferromagnetic layer inserted between the first and second ferromagnetic layers.

摘要翻译： 隧道结型的磁阻效应元件包括磁性多层膜（1），铁磁膜（3）和中间绝缘膜（2），使得电流在磁性多层膜和铁磁膜之间流动，隧穿 通过绝缘膜。 磁性多层膜包括插入第一和第二铁磁层之间的第一铁磁层，第二铁磁层和反铁磁层。

公开(公告)号：US06765824B2

公开(公告)日：2004-07-20

申请号：US10391423

申请日：2003-03-19

申请人： Tatsuya Kishi ,  Yoshiaki Saito ,  Minoru Amano ,  Shigeki Takahashi ,  Katsuya Nishiyama ,  Tomomasa Ueda

发明人： Tatsuya Kishi ,  Yoshiaki Saito ,  Minoru Amano ,  Shigeki Takahashi ,  Katsuya Nishiyama ,  Tomomasa Ueda

IPC分类号： G11C1115

CPC分类号： G11C11/15 ,  G11C11/5607

摘要： There is provided a magnetoresistance element in which a shape of a free ferromagnetic layer includes a first portion with a parallelogrammic contour, and second portions that protrude from a pair of opposite corners of the first portion respectively in a main direction parallel to a pair of opposite sides of the first portion, the shape is asymmetric with respect to a line that passes through a center of the first portion and is parallel to the main direction, and an axis of easy magnetization of the free ferromagnetic layer falls within a range defined by an acute angle that a first direction makes with a second direction, the first direction being substantially parallel to the main direction and the second direction being substantially parallel to the longest line segment that joins contours of the second portions.

摘要翻译： 提供了一种磁阻元件，其中自由铁磁层的形状包括具有平行四边形轮廓的第一部分，以及第二部分，其在与主要方向平行的一对相反侧的第一部分的一对相对的角部分别突出 第一部分的侧面，该形状相对于穿过第一部分的中心并且平行于主方向的线是不对称的，并且自由铁磁性层的容易磁化的轴线落在由 第一方向与第二方向形成的锐角，第一方向基本上平行于主方向，第二方向基本上平行于连接第二部分的轮廓的最长线段。

公开(公告)号：US06730949B2

公开(公告)日：2004-05-04

申请号：US10102944

申请日：2002-03-22

申请人： Tatsuya Kishi ,  Minoru Amano ,  Yoshiaki Saito ,  Shigeki Takahashi ,  Kentaro Nakajima ,  Masayuki Sagoi

发明人： Tatsuya Kishi ,  Minoru Amano ,  Yoshiaki Saito ,  Shigeki Takahashi ,  Kentaro Nakajima ,  Masayuki Sagoi

IPC分类号： H01L2972

CPC分类号： B82Y25/00 ,  G11C11/16 ,  H01F10/3272 ,  H01L43/08

摘要： A magnetoresistance effect devices having a magnetization free layer free to rotate in an applied magnetic field. The magnetization free layer may include first and second ferromagnetic material layers with a nonmagnetic material layer disposed between the two ferromagnetic material layers. Those ferromagnetic materials are antiferromagnetically coupled with each other at a magnetic coupling field J (−3 [kOe]≦J

摘要翻译： 具有在施加的磁场中自由旋转的无磁化层的磁阻效应器件。 无磁化层可以包括第一和第二铁磁材料层，其中非磁性材料层设置在两个铁磁材料层之间。 这些铁磁材料在磁耦合场J（-3 [kOe] = J <0 [kOe]）处相互反铁磁耦合或者铁磁耦合。 或者，无磁化膜包括第一铁磁材料层，第一铁磁材料层包括具有第一磁化的中心区域和具有与第一磁化强度不同的第二磁化强度的边缘区域和第二铁磁材料层，第二铁磁材料层包括具有与第一磁化平行的第三磁化强度的中心区域 磁化和边缘区具有不同于第三磁化的第四磁化。 在另一个实施例中，在第一铁磁材料层和第一非磁性材料耦合层之间的界面处的粗糙度或第一第二铁磁材料层与第一非磁性材料耦合层之间的界面的粗糙度大于2埃。 此外，无磁化层可以由铁磁材料部分铁磁材料部分形成，或者是非磁性材料层和具有不均匀膜厚度的第一铁磁材料层。