公开(公告)号：US07122393B2

公开(公告)日：2006-10-17

申请号：US10939425

申请日：2004-09-14

申请人： Shigeo Osaka

发明人： Shigeo Osaka

IPC分类号： H01L21/00

CPC分类号： H01S5/028 ,  H01L33/44 ,  H01S5/0282

摘要： An optical semiconductor device includes a laminated layer structure, an intermediate film formed on an end surface of the laminated layer structure, and a passivation film formed on the intermediate film. The passivation film has a quantity of ion projection than that of the intermediate film.

公开(公告)号：US06998679B2

公开(公告)日：2006-02-14

申请号：US10348779

申请日：2003-01-23

申请人： Kazutaka Inoue ,  Hitoshi Haematsu

发明人： Kazutaka Inoue ,  Hitoshi Haematsu

IPC分类号： H01L29/812

CPC分类号： H01L29/402 ,  H01L29/41725 ,  H01L29/66863 ,  H01L29/812

摘要： A semiconductor device includes a gate electrode on a semiconductor substrate, a source electrode and a drain electrode that are provided on the semiconductor substrate, the gate electrode being interposed between the source electrode and the drain electrode, an insulating layer covering the gate electrode, and a source wall that extends from the source electrode and passes over the gate electrode, an end surface of the source wall being interposed between the gate electrode and the drain electrode and being located in a position lower than a top surface of the gate electrode.

公开(公告)号：US20050245089A1

公开(公告)日：2005-11-03

申请号：US11155474

申请日：2005-06-20

申请人： Takayuki Watanabe ,  Tsutomu Michitsuta ,  Taro Hasegawa ,  Takuya Fujii

发明人： Takayuki Watanabe ,  Tsutomu Michitsuta ,  Taro Hasegawa ,  Takuya Fujii

IPC分类号： H01S5/042 ,  H01L21/306 ,  H01S5/20 ,  H01S5/227 ,  H01L21/302

CPC分类号： H01L21/30617 ,  H01S5/2081 ,  H01S5/2275 ,  H01S5/3235

摘要： A process of manufacturing a semiconductor device includes the steps of forming a stacked structure of a first III-V compound semiconductor layer containing In and having a composition different from InP and a second III-V compound semiconductor layer containing In. The second III-V compound semiconductor layer is formed over the first III-V compound semiconductor layer and growing an InP layer at regions adjacent the stacked structure to form a stepped structure of InP. The process further includes the step of wet-etching the stepped structure and the second III-V compound semiconductor layer using an etchant containing hydrochloric acid and acetic acid to remove at least the second III-V compound semiconductor layer.

公开(公告)号：US06949811B2

公开(公告)日：2005-09-27

申请号：US10396461

申请日：2003-03-26

申请人： Naoyuki Miyazawa

发明人： Naoyuki Miyazawa

IPC分类号： H01G4/40 ,  H01L21/822 ,  H01L27/04 ,  H01L27/08 ,  H03B5/12 ,  H01L29/00

CPC分类号： H01L27/0805

摘要： A device includes a transistor, and two interdigital capacitors. The transistor is located on an imaginary extension line aligned with a common electrode of the two interdigital capacitors.

摘要翻译： 器件包括晶体管和两个交指电容器。 晶体管位于与两个指数间电容器的公共电极对准的虚拟延伸线上。

公开(公告)号：US06924918B2

公开(公告)日：2005-08-02

申请号：US10660746

申请日：2003-09-12

申请人： Fumio Otake ,  Haruhisa Soda

发明人： Fumio Otake ,  Haruhisa Soda

IPC分类号： G02F1/025 ,  G02B6/12 ,  G02F1/015 ,  G02F1/225 ,  G02F1/03

CPC分类号： G02F1/2257 ,  G02B2006/12142

摘要： An optical modulator includes a p- or n-type semiconductor layer that is provided at an upper part of an optical waveguide path, and modulating electrodes that are provided at intervals on the semiconductor layer in an extension area of the optical waveguide path. The semiconductor layer has first regions located immediately under the modulating electrodes, and second regions located between the first regions. The second regions have separators that electrically separate the first regions from one another.

摘要翻译： 光调制器包括设置在光波导路径的上部的p型或n型半导体层，以及在光波导路径的扩展区域中在半导体层上间隔设置的调制电极。 半导体层具有位于调制电极正下方的第一区域和位于第一区域之间的第二区域。 第二区域具有将第一区域彼此电分离的隔板。

公开(公告)号：US06882667B2

公开(公告)日：2005-04-19

申请号：US10349035

申请日：2003-01-23

申请人： Shinya Suzuki ,  Hiromitsu Kawamura

发明人： Shinya Suzuki ,  Hiromitsu Kawamura

IPC分类号： G02F1/015 ,  H01S5/026 ,  H01S5/042 ,  H01S5/0683 ,  H01S3/04 ,  H01S5/00

CPC分类号： H01S5/042 ,  H01S5/0265 ,  H01S5/0683

摘要： An optical semiconductor device includes an element in which a laser diode and an optical modulator are integrated, and a circuit that sets a common node of the laser diode and the optical modulator at a reference potential different from a ground potential and drives the laser diode and the optical modulator in opposite directions with respect to the reference potential.

摘要翻译： 光学半导体器件包括其中集成有激光二极管和光调制器的元件，以及将激光二极管和光调制器的公共节点设置在不同于地电位的参考电位并驱动激光二极管的电路， 光调制器相对于参考电位相反。

公开(公告)号：US06876683B2

公开(公告)日：2005-04-05

申请号：US10119211

申请日：2002-04-10

申请人： Tohru Watanabe ,  Toshio Higashi ,  Manabu Komiyama ,  Takashi Yamane

发明人： Tohru Watanabe ,  Toshio Higashi ,  Manabu Komiyama ,  Takashi Yamane

IPC分类号： H01S5/022 ,  H01S5/024 ,  H01S5/042 ,  H01S3/04

CPC分类号： H01S5/02284 ,  H01S5/02208 ,  H01S5/0222 ,  H01S5/02224 ,  H01S5/0425 ,  H01S5/0683

摘要： A package for hermetically sealing a semiconductor laser which outputs light having a wavelength of 1.1 μm or more is filled with a gas containing an oxidizing gas such as oxygen or ozone. The oxidizing gas in the package oxidizes hydrogen in the package to prevent hydrogen embrittlement of electrodes that applies stress on electrodes and to suppress variation in the emission wavelength which would otherwise result from the application of stress.

摘要翻译： 用于密封输出波长为1.1μm或更大的光的半导体激光器的封装件装有含氧或臭氧等氧化性气体的气体。 封装中的氧化气体氧化封装中的氢气，以防止在电极上施加应力的电极的氢脆化，并抑制由于施加应力而导致的发射波长的变化。

公开(公告)号：US20040056250A1

公开(公告)日：2004-03-25

申请号：US10665204

申请日：2003-09-22

申请人： FUJITSU QUANTUM DEVICES LIMITED

发明人： Gang Wang ,  Yoshihiro Yoneda

IPC分类号： H01L029/04 ,  H01L031/036 ,  H01L031/0376 ,  H01L031/20

CPC分类号： H01L31/105 ,  H01L31/1844 ,  Y02E10/544

摘要： A semiconductor light-receiving device includes: a semi-insulating substrate; a semiconductor layer of a first conduction type that is formed on the semi-insulating substrate; a buffer layer of the first conduction type that is formed on the semi-insulating substrate and has a lower impurity concentration than the semiconductor layer of the first conduction type; a light absorption layer that is formed on the buffer layer and generates carriers in accordance with incident light; a semiconductor layer of a second conduction type that is formed on the light absorption layer; and a semiconductor intermediate layer that is interposed between the buffer layer and the light absorption layer, and has a forbidden bandwidth within a range lying between the forbidden bandwidth of the buffer layer and the forbidden bandwidth of the light absorption layer.

摘要翻译： 半导体光接收装置包括：半绝缘基板; 形成在半绝缘基板上的第一导电型半导体层; 所述第一导电类型的缓冲层形成在所述半绝缘基板上并且具有比所述第一导电类型的半导体层更低的杂质浓度; 形成在缓冲层上并根据入射光产生载流子的光吸收层; 形成在所述光吸收层上的第二导电类型的半导体层; 以及介于缓冲层和光吸收层之间的半导体中间层，并且在缓冲层的禁止带宽和光吸收层的禁止带宽之间的范围内具有禁止带宽。

公开(公告)号：US20030234924A1

公开(公告)日：2003-12-25

申请号：US10463806

申请日：2003-06-18

申请人： FUJITSU QUANTUM DEVICES LIMITED

发明人： Haruyoshi Ono

IPC分类号： G01J001/42

CPC分类号： G01J1/42 ,  G01J9/00

摘要： An optical device measuring apparatus includes a photodetector receiving light emitted from an optical device, and an introduction portion for introducing the emitted light transmitted through the photodetector to an optical fiber.

摘要翻译： 光学装置测量装置包括接收从光学装置发射的光的光电检测器和用于将透过光电检测器的发射光引入光纤的引入部分。

公开(公告)号：US20030207554A1

公开(公告)日：2003-11-06

申请号：US10456493

申请日：2003-06-09

申请人： FUJITSU LIMITED ,  FUJITSU QUANTUM DEVICES LIMITED

发明人： Kozo Makiyama ,  Katsumi Ogiri

IPC分类号： H01L021/3205 ,  H01L021/4763 ,  H01L021/28 ,  H01L021/44

CPC分类号： H01L29/66462 ,  H01L21/28114 ,  H01L21/28587 ,  H01L29/42316 ,  H01L29/42376

摘要： A method for making a semiconductor device includes forming a resist pattern having a multi-layered structure by performing a plurality of development steps, the resist pattern including a first opening corresponding to a fine gate section of a gate electrode and a second opening placed on the first opening, the second opening corresponding to an over-gate section which is wider than the fine gate section and having a cross section protruding like an overhang, wherein every angle of the second opening at the tip of the over-gate section is more than 90 degrees; and forming the gate electrode provided with the fine gate section and the over-gate section by depositing electrode materials on the resist pattern.