公开(公告)号：US07696060B2

公开(公告)日：2010-04-13

申请号：US12003408

申请日：2007-12-26

Applicant: Jiunn Chen ,  Meng-Jen Wang

Inventor： Jiunn Chen ,  Meng-Jen Wang

IPC: H01L21/76

CPC classification number: H01L21/50 ,  B81C1/00269 ,  B81C2201/0191 ,  H01L21/6835 ,  H01L23/10 ,  H01L23/544 ,  H01L2221/68359 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/16152 ,  H01L2924/16235 ,  H01L2924/00

Abstract: A recyclable stamp device and a recyclable stamp process for wafer bond are provided. The recyclable stamp device includes a substrate, a protective layer, a stack film structure and a cap. The protective layer is disposed on the substrate. An opening is positioned at the substrate and the protective layer to expose the substrate. The stack film structure includes an adhesion layer, a stress control layer and a wafer bond alignment mark layer. The adhesion layer is disposed on the protective layer and the exposed substrate. The stress control layer is disposed on the adhesion layer. The wafer bond alignment mark layer is disposed on the stress control layer. The wafer bond alignment mark layer includes an alignment mark at a side of the opening. The cap has a capping portion disposed on the wafer bond alignment mark layer corresponding to the opening.

Abstract translation: 提供了一种用于晶片接合的可循环印模装置和可循环印模工艺。 可回收印章装置包括基板，保护层，叠层膜结构和盖。 保护层设置在基板上。 开口位于衬底和保护层上以露出衬底。 叠层膜结构包括粘合层，应力控制层和晶片接合对准标记层。 粘合层设置在保护层和暴露的基底上。 应力控制层设置在粘合层上。 晶片接合对准标记层设置在应力控制层上。 晶片接合对准标记层包括在开口侧的对准标记。 盖具有设置在与开口对应的晶片接合对准标记层上的封盖部分。

公开(公告)号：US20090321008A1

公开(公告)日：2009-12-31

申请号：US12163277

申请日：2008-06-27

Applicant: Michael Foster ,  Shifang Zhou

Inventor： Michael Foster ,  Shifang Zhou

IPC: B32B37/14

CPC classification number: B81C3/001 ,  B81B2203/0392 ,  B81C1/00103 ,  B81C2201/019 ,  B81C2201/0191 ,  B81C2203/038

Abstract: System and methods offset mechanism elements during fabrication of Micro-Electro-Mechanical Systems (MEMS) devices. An exemplary embodiment applies a voltage across an offset mechanism element and a bonding layer of a MEMS device to generate an electrostatic charge between the offset mechanism element and the bonding layer, wherein the electrostatic charge draws the offset mechanism element to the bonding layer. The offset mechanism element and the bonding layer are then bonded.

Abstract translation: 微机电系统（MEMS）器件制造过程中的系统和方法偏移机制元件。 示例性实施例施加电压跨越MEMS装置的偏移机构元件和结合层，以在偏置机构元件和结合层之间产生静电荷，其中静电电荷将偏移机构元件拉到粘合层。 然后粘合偏移机构元件和粘合层。

公开(公告)号：US20090291270A1

公开(公告)日：2009-11-26

申请号：US12409938

申请日：2009-03-24

Applicant: Alexander K. Zettl ,  Jannik Christian Meyer

Inventor： Alexander K. Zettl ,  Jannik Christian Meyer

IPC: B44C1/16 ,  B32B3/10 ,  B44C1/22 ,  C23C14/30

CPC classification number: B81C99/008 ,  B01D71/021 ,  B81B2203/0127 ,  B81C2201/0191 ,  H01J37/20 ,  Y10T428/24562 ,  Y10T428/24802

Abstract: An embodiment of a method of suspending a graphene membrane across a gap in a support structure includes attaching graphene to a substrate. A pre-fabricated support structure having the gap is attached to the graphene. The graphene and the pre-fabricated support structure are then separated from the substrate which leaves the graphene membrane suspended across the gap in the pre-fabricated support structure. An embodiment of a method of depositing material includes placing a support structure having a graphene membrane suspended across a gap under vacuum. A precursor is adsorbed to a surface of the graphene membrane. A portion of the graphene membrane is exposed to a focused electron beam which deposits a material from the precursor onto the graphene membrane. An embodiment of a graphene-based structure includes a support structure having a gap, a graphene membrane suspended across the gap, and a material deposited in a pattern on the graphene membrane.

Abstract translation: 将石墨烯膜悬浮在支撑结构中的间隙上的方法的实施例包括将石墨烯附着到基底上。 具有间隙的预制支撑结构附着在石墨烯上。 然后将石墨烯和预制的支撑结构与离开石墨烯膜的基板分离，悬浮在预制的支撑结构中的间隙上。 沉积材料的方法的一个实施例包括在真空下放置具有悬浮在间隙上的石墨烯膜的支撑结构。 前体被吸附到石墨烯膜的表面上。 石墨烯膜的一部分暴露于聚焦电子束，其将材料从前体沉积到石墨烯膜上。 基于石墨烯的结构的一个实施方案包括具有间隙的支撑结构，悬浮在间隙上的石墨烯膜以及以石墨烯膜上的图案沉积的材料。

公开(公告)号：US20090269560A1

公开(公告)日：2009-10-29

申请号：US12369205

申请日：2009-02-11

Applicant: Ali Dhinojwala ,  Pulickel M. Ajayan ,  Sunny Sethi

Inventor： Ali Dhinojwala ,  Pulickel M. Ajayan ,  Sunny Sethi

IPC: C08K3/04 ,  B32B5/16 ,  B32B37/12

CPC classification number: B81C1/00206 ,  B81C1/00111 ,  B81C2201/0191 ,  B82Y30/00 ,  B82Y40/00 ,  C01B31/0226 ,  C01B32/16 ,  C09J7/00 ,  C09J2201/626 ,  Y10T156/109 ,  Y10T428/24008 ,  Y10T428/24364 ,  Y10T428/24893 ,  Y10T428/249921 ,  Y10T428/25 ,  Y10T428/26 ,  Y10T428/29 ,  Y10T428/2913 ,  Y10T428/298 ,  Y10T428/30 ,  Y10T442/2213 ,  Y10T442/2221

Abstract: The invention is directed to carbon nanostructure composite systems which may be useful for various applications, including as dry adhesives, self-cleaning applications, electronics and display technologies, or in a wide variety of other areas where organized nanostructures may be formed and integrated into a flexible substrate. The present invention provides systems and methods wherein organized nanotube structures or other nanostructures are embedded within an adhesive, with the properties and characteristics of the nanotubes or other nanostructures exploited for use in various applications. In one aspect, the invention is directed to a self-cleaning carbon nanotube composite material that includes a substrate, an adhesive coating on at least a portion of the substrate, a plurality of carbon nanostructures formed into a predetermined architecture, each of the plurality of nanostructures having a substantially predetermined width and length, and the architecture of the plurality of nanostructures defining at least one orientation for a plurality of nanostructures, and defining the approximate spacing between nanostructures and/or groups of nanostructures, the carbon nanostructures architecture being at least partially adhered to the adhesive coating on the substrate in a manner that the architecture is stabilized in the predetermined architecture, wherein the carbon nanostructures architecture renders the composite material superhydrophobic.

Abstract translation: 本发明涉及可用于各种应用的碳纳米结构复合体系，其包括作为干式粘合剂，自清洁应用，电子和显示技术，或者可以形成有组织的纳米结构并集成到 柔性基材。 本发明提供了其中有组织的纳米管结构或其他纳米结构嵌入粘合剂中的系统和方法，纳米管或其他纳米结构的性质和特性被用于各种应用中。 一方面，本发明涉及一种自清洁碳纳米管复合材料，其包括基底，至少部分基底上的粘合剂涂层，形成预定结构的多个碳纳米结构，多个 纳米结构具有基本上预定的宽度和长度，并且多个纳米结构的结构限定了多个纳米结构的至少一个取向，并且限定纳米结构和/或纳米结构组之间的近似间隔，所述碳纳米结构体系至少部分地 以基于架构在预定结构中稳定的方式粘附在基底上的粘合剂涂层，其中碳纳米结构体系结构使复合材料具有超疏水性。

公开(公告)号：US20090001499A1

公开(公告)日：2009-01-01

申请号：US11769543

申请日：2007-06-27

Applicant: Lianzhong Yu ,  Shifang Zhou

Inventor： Lianzhong Yu ,  Shifang Zhou

IPC: H01L21/30 ,  H01L27/00

CPC classification number: B81C1/0038 ,  B81C2201/0191

Abstract: Methods for producing MEMS (microelectromechanical systems) devices with a thick active layer and devices produced by the method. An example method includes heavily doping a first surface of a first silicon wafer with P-type impurities, and heavily doping a first surface of a second silicon wafer with N-type impurities. The heavily doped first surfaces are then bonded together, and a second side of the first wafer opposing the first side of the first wafer is thinned to a desired thickness, which may be greater than about 30 micrometers. The second side is then patterned and etched, and the etched surface is then heavily doped with P-type impurities. A cover is then bonded to the second side of the first wafer, and the second wafer is thinned.

Abstract translation: 用于生产具有厚活性层的MEMS（微机电系统）器件的方法和通过该方法制造的器件。 示例性方法包括用P型杂质重掺杂第一硅晶片的第一表面，并用N型杂质重掺杂第二硅晶片的第一表面。 重掺杂的第一表面然后结合在一起，并且与第一晶片的第一侧相对的第一晶片的第二侧被减薄到期望的厚度，其可以大于约30微米。 然后对第二面进行图案化和蚀刻，然后蚀刻的表面被P型杂质重掺杂。 然后将盖子粘合到第一晶片的第二侧，并且使第二晶片变薄。

公开(公告)号：US20070158787A1

公开(公告)日：2007-07-12

申请号：US10713374

申请日：2003-11-13

Applicant: Rajen Chanchani

Inventor： Rajen Chanchani

IPC: H01L29/06

CPC classification number: H01L21/6835 ,  B81C1/00238 ,  B81C3/002 ,  B81C2201/0191 ,  B81C2203/058 ,  H01L21/6836 ,  H01L21/76898 ,  H01L25/16 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68363 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/16195 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A microsystem-on-a-chip comprises a bottom wafer of normal thickness and a series of thinned wafers can be stacked on the bottom wafer, glued and electrically interconnected. The interconnection layer comprises a compliant dielectric material, an interconnect structure, and can include embedded passives. The stacked wafer technology provides a heterogeneously integrated, ultra-miniaturized, higher performing, robust and cost-effective microsystem package. The highly integrated microsystem package, comprising electronics, sensors, optics, and MEMS, can be miniaturized both in volume and footprint to the size of a bottle-cap or less.

Abstract translation: 芯片上的微系统包括正常厚度的底部晶片，并且一系列薄化的晶片可以堆叠在底部晶片上，胶合和电互连。 互连层包括柔性介电材料，互连结构，并且可以包括嵌入式无源器件。 堆叠晶圆技术提供了非均匀集成，超小型化，性能更高，性能稳定且性价比最高的微系统封装。 包括电子，传感器，光学和MEMS的高度集成的微系统封装可以在体积和封装上小型化至瓶盖尺寸或更小。

公开(公告)号：US20070122997A1

公开(公告)日：2007-05-31

申请号：US11627925

申请日：2007-01-26

Applicant: FRANCOIS HENLEY ,  Nathan Cheung

Inventor： FRANCOIS HENLEY ,  Nathan Cheung

IPC: H01L21/30 ,  H01L21/46

CPC classification number: H01L21/76254 ,  B81C1/0038 ,  B81C2201/0191 ,  H01L21/2007

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

Abstract translation: 一种用于从供体衬底（10）形成材料（12）的膜的技术。 该技术具有将能量粒子（22）通过供体衬底（10）的表面引入到表面下方的选定深度（20）的步骤，其中颗粒具有相对较高的浓度以限定施主衬底材料（12） 高于所选深度。 能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控切割作用，因此，所述切割动作提供了扩张切割前沿，从而将供体材料从剩余的 部分供体基质。

公开(公告)号：US20070122995A1

公开(公告)日：2007-05-31

申请号：US11627920

申请日：2007-01-26

Applicant: FRANCOIS HENLEY ,  Nathan Cheung

Inventor： FRANCOIS HENLEY ,  Nathan Cheung

IPC: H01L21/30 ,  H01L21/425

CPC classification number: H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

公开(公告)号：US07205211B2

公开(公告)日：2007-04-17

申请号：US10509007

申请日：2003-03-26

Applicant: Bernard Aspar ,  Marc Zussy ,  Jean-Frédéric Clerc

Inventor： Bernard Aspar ,  Marc Zussy ,  Jean-Frédéric Clerc

IPC: H01L21/78

CPC classification number: H01L21/2007 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2203/036 ,  H01L21/6835 ,  H01L21/76251 ,  H01L2221/68359 ,  Y10S438/977

Abstract: This invention relates to a method for making a thin layer starting from a wafer comprising a front face with a given relief, and a back face, comprising steps consisting of: a) obtaining a support handle with a face acting as a bonding face; b) preparing the front face of the wafer, this preparation including incomplete planarisation of the front face of the wafer, to obtain a bonding energy E0 between a first value corresponding to the minimum bonding energy compatible with the later thinning step, and a second value corresponding to the maximum bonding energy compatible with the subsequent desolidarisation operation, the bonding energy E0 being such that E0=α.E, where E is the bonding energy that would be obtained if the front face of the wafer was completely planarised, α is the ratio between the incompletely planarised area of the front face of the wafer and the area of the front face of the wafer if it were completely planarised; c) solidarising the front face of the wafer on the bonding face of the support handle, by direct bonding; d) thinning the wafer starting from its back face until the thin layer is obtained; e) transferring the thin layer onto a usage support, involving separation from the support handle.

Abstract translation: 本发明涉及一种用于制造从包括具有给定浮雕的正面的晶片开始的薄层的方法和包括以下步骤的步骤：

公开(公告)号：US07163873B2

公开(公告)日：2007-01-16

申请号：US11287379

申请日：2005-11-28

Applicant: Fabrice Letertre ,  Bruno Ghyselen ,  Olivier Rayssac

Inventor： Fabrice Letertre ,  Bruno Ghyselen ,  Olivier Rayssac

IPC: H01L21/30

CPC classification number: H01L21/187 ,  B81C1/00365 ,  B81C2201/0191 ,  C30B25/183 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02439 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02658 ,  H01L21/02664 ,  H01L21/76254

Abstract: A stress absorbing microstructure assembly including a support substrate having an accommodation layer that has plurality of motifs engraved or etched in a surface, a buffer layer and a nucleation layer. The stress absorbing microstructure assembly may also include an insulating layer between the buffer layer and the nucleation layer. This assembly can receive thick epitaxial layers thereon with concern of causing cracking of such layers.

Abstract translation: 一种应力吸收微结构组件，包括具有在表面上雕刻或蚀刻的多个图案的容纳层的支撑衬底，缓冲层和成核层。 应力吸收微结构组件还可以包括缓冲层和成核层之间的绝缘层。 该组件可以在其上接收厚的外延层，同时引起这种层的破裂。