公开(公告)号：US20130328055A1

公开(公告)日：2013-12-12

申请号：US13724007

申请日：2012-12-21

Applicant: Jumpei TAJIMA ,  Kotaro Zaima ,  Shigeya Kimura ,  Hiroshi Ono ,  Shinji Yamada ,  Satoshi Mitsugi ,  Naoharu Sugiyama ,  Shinya Nunoue

Inventor： Jumpei TAJIMA ,  Kotaro Zaima ,  Shigeya Kimura ,  Hiroshi Ono ,  Shinji Yamada ,  Satoshi Mitsugi ,  Naoharu Sugiyama ,  Shinya Nunoue

IPC: H01L33/40

CPC classification number: H01L33/40 ,  H01L33/14 ,  H01L33/22 ,  H01L33/38

Abstract: According to one embodiment, a semiconductor light emitting device includes first and second electrodes, first, second and third semiconductor layers, and a light emitting layer. The first semiconductor layer of a first conductivity type is provided on the first electrode. The light emitting layer is provided on the first semiconductor layer. The second semiconductor layer of a second conductivity type is provided on the light emitting layer. The third semiconductor layer with low impurity concentration is provided on a part of the second semiconductor layer. The second electrode includes a pad section and a narrow wire section. The pad section is provided on the third semiconductor layer. The narrow wire section extends out from the pad section and includes an extending portion extending along a plane perpendicular to a stacking direction. The narrow wire section is in contact with the second semiconductor layer.

Abstract translation: 根据一个实施例，半导体发光器件包括第一和第二电极，第一，第二和第三半导体层以及发光层。 第一导电类型的第一半导体层设置在第一电极上。 发光层设置在第一半导体层上。 第二导电类型的第二半导体层设置在发光层上。 具有低杂质浓度的第三半导体层设置在第二半导体层的一部分上。 第二电极包括焊盘部分和窄线部分。 焊盘部设置在第三半导体层上。 窄线部分从焊盘部分延伸出并且包括沿垂直于堆叠方向的平面延伸的延伸部分。 窄线部分与第二半导体层接触。

公开(公告)号：US08604496B2

公开(公告)日：2013-12-10

申请号：US13214690

申请日：2011-08-22

Applicant: Tomonari Shioda ,  Hisashi Yoshida ,  Koichi Tachibana ,  Naoharu Sugiyama ,  Shinya Nunoue

Inventor： Tomonari Shioda ,  Hisashi Yoshida ,  Koichi Tachibana ,  Naoharu Sugiyama ,  Shinya Nunoue

IPC: H01L33/00

CPC classification number: H01L33/06 ,  H01L33/32

Abstract: According to one embodiment, an optical semiconductor device includes an n-type semiconductor layer, a p-type semiconductor layer, and a functional part. The functional part is provided between the n-type semiconductor layer and the p-type semiconductor layers. The functional part includes a plurality of active layers stacked in a direction from the n-type semiconductor layer toward the p-type semiconductor layer. At least two of the active layers include a multilayer stacked body, an n-side barrier layer, a well layer and a p-side barrier layer. The multilayer stacked body includes a plurality of thick film layers and a plurality of thin film layers alternately stacked in the direction. The n-side barrier layer is provided between the multilayer stacked body and the p-type layer. The well layer is provided between the n-side barrier layer and the p-type layer. The p-side barrier layer is provided between the well layer and the p-type layer.

Abstract translation: 根据一个实施例，光学半导体器件包括n型半导体层，p型半导体层和功能部件。 功能部件设置在n型半导体层和p型半导体层之间。 功能部件包括在从n型半导体层朝向p型半导体层的方向上堆叠的多个有源层。 至少两个有源层包括多层堆叠体，n侧阻挡层，阱层和p侧势垒层。 多层堆叠体包括沿该方向交替堆叠的多个厚膜层和多个薄膜层。 n侧阻挡层设置在多层叠层体和p型层之间。 阱层设置在n侧阻挡层和p型层之间。 p侧阻挡层设置在阱层和p型层之间。

公开(公告)号：US08564006B2

公开(公告)日：2013-10-22

申请号：US13405985

申请日：2012-02-27

Applicant: Koichi Tachibana ,  Hisashi Yoshida ,  Hiroshi Ono ,  Hajime Nago ,  Yoshiyuki Harada ,  Toshiki Hikosaka ,  Maki Sugai ,  Toshiyuki Oka ,  Shinya Nunoue

Inventor： Koichi Tachibana ,  Hisashi Yoshida ,  Hiroshi Ono ,  Hajime Nago ,  Yoshiyuki Harada ,  Toshiki Hikosaka ,  Maki Sugai ,  Toshiyuki Oka ,  Shinya Nunoue

IPC: H01L33/00

CPC classification number: H01L33/20 ,  H01L29/045 ,  H01L29/2003 ,  H01L33/16 ,  H01L33/32

Abstract: According to one embodiment, a nitride semiconductor device includes a substrate and a semiconductor functional layer. The substrate is a single crystal. The semiconductor functional layer is provided on a major surface of the substrate and includes a nitride semiconductor. The substrate includes a plurality of structural bodies disposed in the major surface. Each of the plurality of structural bodies is a protrusion provided on the major surface or a recess provided on the major surface. An absolute value of an angle between a nearest direction of an arrangement of the plurality of structural bodies and a nearest direction of a crystal lattice of the substrate in a plane parallel to the major surface is not less than 1 degree and not more than 10 degrees.

Abstract translation: 根据一个实施例，氮化物半导体器件包括衬底和半导体功能层。 衬底是单晶。 半导体功能层设置在基板的主表面上并且包括氮化物半导体。 基板包括设置在主表面中的多个结构体。 多个结构体中的每一个是设置在主表面上的突起或设置在主表面上的凹部。 多个结构体的排列的最近方向与平行于主表面的平面中的基板的晶格的最近方向之间的角度的绝对值不小于1度且不大于10度 。

公开(公告)号：US08546824B2

公开(公告)日：2013-10-01

申请号：US13214608

申请日：2011-08-22

Applicant: Iwao Mitsuishi ,  Yumi Fukuda ,  Aoi Okada ,  Naotoshi Matsuda ,  Shinya Nunoue ,  Keiko Albessard ,  Masahiro Kato

Inventor： Iwao Mitsuishi ,  Yumi Fukuda ,  Aoi Okada ,  Naotoshi Matsuda ,  Shinya Nunoue ,  Keiko Albessard ,  Masahiro Kato

IPC: H01L27/15

CPC classification number: H01L25/0753 ,  C09K11/0883 ,  C09K11/7734 ,  G09F13/20 ,  H01L33/502 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light emitting device according to one embodiment includes: a board; plural first light emitting units each including a first light emitting element and a first fluorescent layer formed on the first light emitting element having a green phosphor; plural second light emitting units each including a second light emitting element and a second fluorescent layer formed on the second light emitting element having a red phosphor; the second fluorescent layers and the first fluorescent layers being separated in a non-contact manner with gas interposed there between; and plural third light emitting units each including a third light emitting element and a resin layer formed on the third light emitting element having neither a green phosphor nor the red phosphor, the third light emitting units being disposed between the first light emitting units and the second light emitting units.

Abstract translation: 根据一个实施例的发光器件包括：板; 多个第一发光单元，每个包括形成在具有绿色荧光体的第一发光元件上的第一发光元件和第一荧光层; 多个第二发光单元，每个包括形成在具有红色荧光体的第二发光元件上的第二发光元件和第二荧光层; 第二荧光层和第一荧光层以介于其间的气体以非接触方式分离; 以及多个第三发光单元，每个包括第三发光元件和形成在第三发光元件上的树脂层，其中没有绿色荧光体和红色荧光体，第三发光单元设置在第一发光单元和第二发光单元之间 发光单元。

公开(公告)号：US20130237036A1

公开(公告)日：2013-09-12

申请号：US13604183

申请日：2012-09-05

Applicant: Toshiki HIKOSAKA ,  Yoshiyuki HARADA ,  Hisashi YOSHIDA ,  Naoharu SUGIYAMA ,  Shinya NUNOUE

Inventor： Toshiki HIKOSAKA ,  Yoshiyuki HARADA ,  Hisashi YOSHIDA ,  Naoharu SUGIYAMA ,  Shinya NUNOUE

IPC: H01L21/02

CPC classification number: H01L21/02389 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/12

Abstract: According to one embodiment, a method for manufacturing a nitride semiconductor layer is disclosed. The method can include forming a first lower layer on a major surface of a substrate and forming a first upper layer on the first lower layer. The first lower layer has a first lattice spacing along a first axis parallel to the major surface. The first upper layer has a second lattice spacing along the first axis larger than the first lattice spacing. At least a part of the first upper layer has compressive strain. A ratio of a difference between the first and second lattice spacing to the first lattice spacing is not less than 0.005 and not more than 0.019. A growth rate of the first upper layer in a direction parallel to the major surface is larger than that in a direction perpendicular to the major surface.

Abstract translation: 根据一个实施例，公开了一种用于制造氮化物半导体层的方法。 该方法可以包括在基底的主表面上形成第一下层，并在第一下层上形成第一上层。 第一下层沿着平行于主表面的第一轴线具有第一格子间距。 第一上层具有沿着第一轴线的第二格子间距大于第一格子间距。 第一上层的至少一部分具有压缩应变。 第一和第二格子间隔之间的差与第一格子间隔的比率不小于0.005且不大于0.019。 第一上层在与主表面平行的方向上的生长速率大于垂直于主表面的方向的生长速率。

公开(公告)号：US20130234182A1

公开(公告)日：2013-09-12

申请号：US13601520

申请日：2012-08-31

Applicant: Hiroshi KATSUNO ,  Satoshi Mitsugi ,  Shinya Nunoue

Inventor： Hiroshi KATSUNO ,  Satoshi Mitsugi ,  Shinya Nunoue

IPC: H01L33/20 ,  H01L33/58

CPC classification number: H01L33/405 ,  H01L33/20 ,  H01L33/38 ,  H01L33/44 ,  H01L33/58

Abstract: According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting layer, a bonding pad, a narrow wire electrode and a first insulating layer. The light emitting layer is provided between the first semiconductor layer and the second semiconductor layer and is in contact with the first semiconductor layer. The narrow wire electrode includes a first portion and a second portion. The first portion is provided on a surface of the first semiconductor layer not in contact with the light emitting layer and is in ohmic contact with the first semiconductor layer. The second portion is provided on the surface and located between the first portion and the bonding pad. The narrow wire electrode is electrically connected to the bonding pad. The first insulating layer is provided between the second portion and the first semiconductor layer.

公开(公告)号：US08525203B2

公开(公告)日：2013-09-03

申请号：US12874510

申请日：2010-09-02

Applicant: Koichi Tachibana ,  Hajime Nago ,  Toshiki Hikosaka ,  Shigeya Kimura ,  Shinya Nunoue

Inventor： Koichi Tachibana ,  Hajime Nago ,  Toshiki Hikosaka ,  Shigeya Kimura ,  Shinya Nunoue

IPC: H01L33/00

CPC classification number: H01L33/145 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/32 ,  H01S5/34333

Abstract: According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a light emitting portion, a first layer, a second layer, and an intermediate layer. The semiconductor layers include nitride semiconductor. The light emitting portion is provided between the n-type semiconductor layer and the p-type semiconductor layer and includes a quantum well layer. The first layer is provided between the light emitting portion and the p-type semiconductor layer and includes AlX1Ga1-x1N having first Al composition ratio x1. The second layer is provided between the first layer and the p-type semiconductor layer and includes Alx2Ga1-x2N having second Al composition ratio x2 higher than the first Al composition ratio x1. The intermediate layer is provided between the first layer and the light emitting portion and has a thickness not smaller than 3 nanometers and not larger than 8 nanometers and includes Inz1Ga1-z1N (0≦z1

Abstract translation: 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层，发光部分，第一层，第二层和中间层。 半导体层包括氮化物半导体。 发光部分设置在n型半导体层和p型半导体层之间，并且包括量子阱层。 第一层设置在发光部和p型半导体层之间，并且包括具有第一Al组成比x1的AlX1Ga1-x1N。 第二层设置在第一层和p型半导体层之间，并且包括具有比第一Al组成比x1高的第二Al组成比x2的Al x2 Ga1-x2N。 中间层设置在第一层和发光部之间，并且具有不小于3纳米且不大于8纳米的厚度，并且包括Inz1Ga1-z1N（0 @ z1 <1）。

公开(公告)号：US20130153922A1

公开(公告)日：2013-06-20

申请号：US13689841

申请日：2012-11-30

Applicant: Toru Gotoda ,  Toshiyuki Oka ,  Shinya Nunoue ,  Kotaro Zaima

Inventor： Toru Gotoda ,  Toshiyuki Oka ,  Shinya Nunoue ,  Kotaro Zaima

IPC: H01L33/32

CPC classification number: H01L33/405 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/40 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor light emitting device has a light emitting element, a first electrode layer, a second electrode layer, a seed electrode layer and a plated layer. The light emitting element has a nitride-based III-V compound semiconductor on a substrate and a light extraction surface. The first electrode layer is provided on the light extraction surface. The second electrode layer is provided on a surface opposite to the light extraction surface. The seed electrode layer is configured to cover the entire surface of the second electrode layer. The plated layer is provided on the seed electrode layer. The light emitting element has a light emitting layer, first conductive type semiconductor layer, and second conductive type semiconductor layer, and has a forward tapered shape of a width which gradually narrows in order of the second conductive type semiconductor layer, the light emitting layer and the first conductive type semiconductor layer.

Abstract translation: 半导体发光器件具有发光元件，第一电极层，第二电极层，种子电极层和镀层。 发光元件在基板上具有基于氮化物的III-V化合物半导体和光提取表面。 第一电极层设置在光提取面上。 第二电极层设置在与光提取面相反的表面上。 种子电极层构造成覆盖第二电极层的整个表面。 电镀层设置在种子电极层上。 发光元件具有发光层，第一导电型半导体层和第二导电型半导体层，并且具有逐渐变窄的第二导电型半导体层，发光层和 第一导电型半导体层。

公开(公告)号：US08461611B2

公开(公告)日：2013-06-11

申请号：US13208658

申请日：2011-08-12

Applicant: Hiroshi Ono ,  Toshiki Hikosaka ,  Tomoko Morioka ,  Toshiyuki Oka ,  Shinya Nunoue

Inventor： Hiroshi Ono ,  Toshiki Hikosaka ,  Tomoko Morioka ,  Toshiyuki Oka ,  Shinya Nunoue

IPC: H01L33/22

CPC classification number: H01L33/22 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/06 ,  H01L33/20

Abstract: According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer and a light emitting part. The first semiconductor layer includes an n-type semiconductor layer. The second semiconductor layer includes a p-type semiconductor layer. The light emitting part is provided between the first semiconductor layer and the second semiconductor layer, and includes a plurality of barrier layers and a well layer provided between the plurality of barrier layers. The first semiconductor layer has a first irregularity and a second irregularity. The first irregularity is provided on a first major surface of the first semiconductor layer on an opposite side to the light emitting part. The second irregularity is provided on a bottom face and a top face of the first irregularity, and has a level difference smaller than a level difference between the bottom face and the top face.

Abstract translation: 根据一个实施例，半导体发光器件包括第一半导体层，第二半导体层和发光部分。 第一半导体层包括n型半导体层。 第二半导体层包括p型半导体层。 发光部分设置在第一半导体层和第二半导体层之间，并且包括多个势垒层和设置在多个势垒层之间的阱层。 第一半导体层具有第一不规则性和第二不规则性。 第一不规则性设置在第一半导体层的与发光部相反的一侧的第一主表面上。 第二不规则性设置在第一凹凸的底面和顶面上，并且具有小于底面与顶面之间的水平差的水平差。

公开(公告)号：US08452144B2

公开(公告)日：2013-05-28

申请号：US13034128

申请日：2011-02-24

Applicant: Shinji Saito ,  Yasushi Hattori ,  Rei Hashimoto ,  Shinya Nunoue

Inventor： Shinji Saito ,  Yasushi Hattori ,  Rei Hashimoto ,  Shinya Nunoue

IPC: G02B6/02

CPC classification number: H05B33/145

Abstract: A light emitter according to one embodiment has a fiber shape. And it includes a core portion containing a light emitting material, the material absorbing excitation light and emitting light having a wavelength longer than a wavelength of the excitation light. And also it includes a clad portion provided outside the core portion, the clad portion having a first region and second regions, the second regions being periodically formed in the first region, the second regions having a refractive index higher than a refractive index of a first region, the refractive index of the first region being equal to or higher than a refractive index of the core portion.

Abstract translation: 根据一个实施例的发光体具有纤维形状。 并且它包括含有发光材料的芯部分，该材料吸收激发光并发射具有比激发光的波长更长的波长的光。 并且还包括设置在芯部外侧的包层部分，所述包层部分具有第一区域和第二区域，所述第二区域周期性地形成在所述第一区域中，所述第二区域的折射率高于第一区域的折射率 第一区域的折射率等于或高于芯部分的折射率。