公开(公告)号：US20210317049A1

公开(公告)日：2021-10-14

申请号：US17357713

申请日：2021-06-24

Applicant: Applied Materials, Inc.

Inventor： Jennifer Y. Sun ,  Ren-Guan Duan ,  Biraja P. Kanungo ,  Dmitry Lubomirsky

IPC: C04B41/87 ,  C04B41/00 ,  C04B41/80 ,  C04B41/89 ,  C04B41/52 ,  C04B41/50

Abstract: A heat treated ceramic article includes a ceramic substrate and a ceramic coating on the ceramic substrate. The ceramic coating is a non-sintered ceramic coating that has a different composition than the ceramic substrate. The heat treated ceramic article further includes a transition layer between the ceramic substrate and the ceramic coating, the transition layer comprising first elements from the ceramic coating that have reacted with second elements from the ceramic substrate, wherein the transition layer has a thickness of about 0.1 microns to about 5 microns.

公开(公告)号：US11130142B2

公开(公告)日：2021-09-28

申请号：US16846000

申请日：2020-04-10

Applicant: APPLIED MATERIALS, INC.

Inventor： Dmitry Lubomirsky ,  Vladimir Knyazik ,  Hamid Noorbakhsh ,  Jason Della Rosa ,  Zheng John Ye ,  Jennifer Y. Sun ,  Sumanth Banda

IPC: C23C16/40 ,  B05B1/00 ,  C23C16/455 ,  H01J37/32 ,  B05B1/18

Abstract: Embodiments of showerheads having a detachable gas distribution plate are provided herein. In some embodiments, a showerhead for use in a substrate processing chamber includes a body having a first side and an opposing second side; a gas distribution plate disposed proximate the second side of the body; and a clamp disposed about a peripheral edge of the gas distribution plate to removably couple the gas distribution plate to the body, wherein the body is electrically coupled to the gas distribution plate through the clamp.

公开(公告)号：US11024486B2

公开(公告)日：2021-06-01

申请号：US15581396

申请日：2017-04-28

Applicant: Applied Materials, Inc.

Inventor： Dmitry Lubomirsky ,  Xinglong Chen ,  Shankar Venkataraman

IPC: H01J37/32 ,  C23C16/455 ,  H01L21/67 ,  H01L21/3213 ,  C23C16/54 ,  C23C16/505

Abstract: An exemplary system may include a chamber configured to contain a semiconductor substrate in a processing region of the chamber. The system may include a first remote plasma unit fluidly coupled with a first access of the chamber and configured to deliver a first precursor into the chamber through the first access. The system may still further include a second remote plasma unit fluidly coupled with a second access of the chamber and configured to deliver a second precursor into the chamber through the second access. The first and second access may be fluidly coupled with a mixing region of the chamber that is separate from and fluidly coupled with the processing region of the chamber. The mixing region may be configured to allow the first and second precursors to interact with each other externally from the processing region of the chamber.

公开(公告)号：US20210134618A1

公开(公告)日：2021-05-06

申请号：US17145194

申请日：2021-01-08

Applicant: Applied Materials, Inc.

Inventor： Dmitry Lubomirsky ,  Srinivas Nemani ,  Ellie Yieh ,  Sergey G. Belostotskiy

IPC: H01L21/67 ,  H01L21/3065 ,  H01J37/32 ,  C23C16/02 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/683

Abstract: Methods and process chambers for etching of low-k and other dielectric films are described. For example, a method includes modifying portions of the low-k dielectric layer with a plasma process. The modified portions of the low-k dielectric layer are etched selectively over a mask layer and unmodified portions of the low-k dielectric layer. Etch chambers having multiple chamber regions for alternately generating distinct plasmas are described. In embodiments, a first charge coupled plasma source is provided to generate an ion flux to a workpiece in one operational mode, while a secondary plasma source is provided to provide reactive species flux without significant ion flux to the workpiece in another operational mode. A controller operates to cycle the operational modes repeatedly over time to remove a desired cumulative amount of the dielectric material.

公开(公告)号：US10920320B2

公开(公告)日：2021-02-16

申请号：US15625454

申请日：2017-06-16

Applicant: Applied Materials, Inc.

Inventor： Junghoon Kim ,  Soonam Park ,  Tae Seung Cho ,  Dmitry Lubomirsky ,  Nikolai Kalnin

IPC: C23C16/513 ,  B81C99/00 ,  H01L21/66 ,  H01L21/3065 ,  C23C16/505 ,  H01L21/311 ,  H01J37/32

Abstract: Methods of monitoring a plasma while processing a semiconductor substrate are described. In embodiments, the methods include determining the difference in power between the power delivered from the plasma power supply and the power received by the plasma in a substrate processing chamber. The power received may be determined using a V/I sensor positioned after the matching circuit. The power reflected or the power lost is the difference between the delivered power and the received power. The process may be terminated by removing the delivered power if the reflected power is above a setpoint. The VRF may further be fourier transformed into frequency space and compared to the stored fourier transform of a healthy plasma process. Missing frequencies from the VRF fourier transform may independently or further indicate an out-of-tune plasma process and the process may be terminated.

公开(公告)号：US10903052B2

公开(公告)日：2021-01-26

申请号：US16537048

申请日：2019-08-09

Applicant: Applied Materials, Inc.

Inventor： Satoru Kobayashi ,  Hideo Sugai ,  Nikolai Kalnin ,  Soonam Park ,  Toan Tran ,  Dmitry Lubomirsky

IPC: H01J37/32 ,  H01L21/67

Abstract: Exemplary systems according to embodiments of the present technology include a housing that defines a process chamber and a waveguide cavity. A first conductive plate is disposed within the housing. The system also includes a second conductive plate positioned within the housing and at least partially defining the waveguide cavity. The second conductive plate is vertically translatable within the housing to adjust a distance between the first conductive plate and the second conductive plate to affect modes of electromagnetic radiation propagating within the waveguide cavity. The systems also include one or more electronics sets that are configured to transmit the electromagnetic radiation into the waveguide cavity to produce plasma from at least one process gas delivered within the process chamber.

公开(公告)号：US10829855B2

公开(公告)日：2020-11-10

申请号：US15492938

申请日：2017-04-20

Applicant: Applied Materials, Inc.

Inventor： Anh N. Nguyen ,  Dmitry Lubomirsky ,  Mehmet Tugrul Samir

IPC: C23C16/455

Abstract: Embodiments disclosed herein generally relate to a gas distribution assembly for providing improved uniform distribution of processing gases into a semiconductor processing chamber. The gas distribution assembly includes a gas distribution plate, a blocker plate, and a dual zone showerhead. The gas distribution assembly provides for independent center to edge flow zonality, independent two precursor delivery, two precursor mixing via a mixing manifold, and recursive mass flow distribution in the gas distribution plate.

公开(公告)号：US10707061B2

公开(公告)日：2020-07-07

申请号：US15581425

申请日：2017-04-28

Applicant: Applied Materials, Inc.

Inventor： Soonam Park ,  Yufei Zhu ,  Edwin C. Suarez ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Jiayin Huang

IPC: H01J37/32 ,  H01L21/66 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/67 ,  C23C16/455 ,  C23C16/50 ,  C23C16/505 ,  C23C16/52

Abstract: A method of conditioning internal surfaces of a plasma source includes flowing first source gases into a plasma generation cavity of the plasma source that is enclosed at least in part by the internal surfaces. Upon transmitting power into the plasma generation cavity, the first source gases ignite to form a first plasma, producing first plasma products, portions of which adhere to the internal surfaces. The method further includes flowing the first plasma products out of the plasma generation cavity toward a process chamber where a workpiece is processed by the first plasma products, flowing second source gases into the plasma generation cavity. Upon transmitting power into the plasma generation cavity, the second source gases ignite to form a second plasma, producing second plasma products that at least partially remove the portions of the first plasma products from the internal surfaces.

公开(公告)号：US10573496B2

公开(公告)日：2020-02-25

申请号：US14565046

申请日：2014-12-09

Applicant: Applied Materials, Inc.

Inventor： Dmitry Lubomirsky

IPC: H01J37/32 ,  H05H1/46

Abstract: An apparatus for supplying plasma products includes a plasma generation block that defines a toroidal plasma cavity therein. The plasma cavity is substantially symmetric about a toroidal axis, and the toroidal axis defines a first and second axial side of the plasma generation block. A magnetic element at least partially surrounds the plasma generation block at one azimuthal location with respect to the toroidal axis, such that a magnetic flux within the magnetic element induces a corresponding electric field into the plasma cavity to generate a plasma from one or more source gases, the plasma forming plasma products. The plasma generation block supplies the plasma products through a plurality of output apertures defined by the plasma generation block on the first axial side.

公开(公告)号：US20200058516A1

公开(公告)日：2020-02-20

申请号：US16665834

申请日：2019-10-28

Applicant: Applied Materials, Inc.

Inventor： Soonam Park ,  Yufei Zhu ,  Edwin C. Suarez ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Jiayin Huang

IPC: H01L21/3213 ,  H01J37/32 ,  C23C16/52 ,  C23C16/455 ,  C23C16/452 ,  C23C16/44 ,  H01L21/66 ,  H01L21/67 ,  H01L21/311 ,  H01L21/3065 ,  C23C16/50 ,  G01J3/02 ,  G01J3/443

Abstract: In an embodiment, a plasma source includes a first electrode, configured for transfer of one or more plasma source gases through first perforations therein; an insulator, disposed in contact with the first electrode about a periphery of the first electrode; and a second electrode, disposed with a periphery of the second electrode against the insulator such that the first and second electrodes and the insulator define a plasma generation cavity. The second electrode is configured for movement of plasma products from the plasma generation cavity therethrough toward a process chamber. A power supply provides electrical power across the first and second electrodes to ignite a plasma with the one or more plasma source gases in the plasma generation cavity to produce the plasma products. One of the first electrode, the second electrode and the insulator includes a port that provides an optical signal from the plasma.