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375 条记录 (耗时 0.032 秒)

    LIGHT EMITTING DIODE
    121.
    发明申请
    LIGHT EMITTING DIODE 有权
    发光二极管

    公开(公告)号：US20130087820A1

    公开(公告)日：2013-04-11

    申请号：US13340661

    申请日：2011-12-29

    申请人： ZHEN-DONG ZHU ,  QUN-QING LI ,  SHOU-SHAN FAN

    发明人： ZHEN-DONG ZHU ,  QUN-QING LI ,  SHOU-SHAN FAN

    IPC分类号： H01L33/22

    CPC分类号： H01L33/22 ,  H01L33/382 ,  H01L33/405

    摘要： A light emitting diode is provided. The light emitting diode includes a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode and a second electrode. The active layer is sandwiched between the first semiconductor layer and the second semiconductor layer, and a surface of the second semiconductor layer which is away from the active layer is a light extraction surface of the LED. The first electrode is electrically connected with the first semiconductor layer. The second electrode electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are formed on the light extraction surface of LED, the number of the three-dimensional nano-structures are aligned side by side, and a cross section of each three-dimensional nano-structure is M-shaped.

    摘要翻译： 提供发光二极管。 发光二极管包括第一半导体层，有源层，第二半导体层，第一电极和第二电极。 有源层夹在第一半导体层和第二半导体层之间，并且远离有源层的第二半导体层的表面是LED的光提取表面。 第一电极与第一半导体层电连接。 第二电极与第二半导体层电连接。 在LED的光提取面上形成多个三维纳米结构，三维纳米结构的数量并排排列，每个三维纳米结构的截面为M- 成形。

    LIGHT EMITTING DIODE
    122.
    发明申请
    LIGHT EMITTING DIODE 有权
    发光二极管

    公开(公告)号：US20130087819A1

    公开(公告)日：2013-04-11

    申请号：US13340643

    申请日：2011-12-29

    申请人： ZHEN-DONG ZHU ,  QUN-QING LI ,  SHOU-SHAN FAN

    发明人： ZHEN-DONG ZHU ,  QUN-QING LI ,  SHOU-SHAN FAN

    IPC分类号： H01L33/60 ,  H01L33/36

    CPC分类号： H01L33/22 ,  H01L33/38 ,  H01L33/405

    摘要： A light emitting diode is provided. The light emitting diode includes a first semiconductor layer, an active layer and a second semiconductor layer. The active layer is sandwiched between the first semiconductor layer and the second semiconductor layer, and a surface of the second semiconductor layer which is away from the active layer is a light emitting surface. A first electrode is electrically connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are formed on the light emitting surface. The number of the three-dimensional nano-structure are aligned side by side, and a cross-section of thee three-dimensional nano-structure is M-shaped.

    摘要翻译： 提供发光二极管。 发光二极管包括第一半导体层，有源层和第二半导体层。 有源层夹在第一半导体层和第二半导体层之间，并且远离有源层的第二半导体层的表面是发光表面。 第一电极与第一半导体层电连接。 第二电极与第二半导体层电连接。 在发光面上形成多个三维纳米结构。 三维纳米结构的数量并排排列，三维纳米结构的截面为M形。

    METHOD FOR MAKING LIGHT EMITTING DIODE
    125.
    发明申请
    METHOD FOR MAKING LIGHT EMITTING DIODE 有权
    制造发光二极管的方法

    公开(公告)号：US20120276672A1

    公开(公告)日：2012-11-01

    申请号：US13288234

    申请日：2011-11-03

    申请人： YANG WEI ,  SHOU-SHAN FAN

    发明人： YANG WEI ,  SHOU-SHAN FAN

    IPC分类号： H01L33/06 ,  H01L33/20 ,  B82Y40/00

    CPC分类号： H01L33/007 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02642 ,  H01L21/02647 ,  H01L33/12 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method for making a light emitting diode comprises the following steps. First, a substrate having an epitaxial growth surface is provided. Second, a carbon nanotube layer is located on the epitaxial growth surface. Third, a first semiconductor layer, an active layer, and a second semiconductor layer is grown on the epitaxial growth surface. Fourth, a portion of the second semiconductor layer and the active layer is etched to expose a portion of the first semiconductor layer. Fifth, a first electrode is electrically connected to the first semiconductor layer, and a second electrode electrically is connected to the second semiconductor layer.

    摘要翻译： 制造发光二极管的方法包括以下步骤。 首先，提供具有外延生长面的基板。 第二，碳纳米管层位于外延生长表面上。 第三，在外延生长表面上生长第一半导体层，有源层和第二半导体层。 第四，蚀刻第二半导体层和有源层的一部分以暴露第一半导体层的一部分。 第五，第一电极电连接到第一半导体层，第二电极电连接到第二半导体层。

    METHOD FOR MAKING LIGHT EMITTING DIODE
    126.
    发明申请
    METHOD FOR MAKING LIGHT EMITTING DIODE 有权
    制造发光二极管的方法

    公开(公告)号：US20120276671A1

    公开(公告)日：2012-11-01

    申请号：US13288192

    申请日：2011-11-03

    申请人： YANG WEI ,  SHOU-SHAN FAN

    发明人： YANG WEI ,  SHOU-SHAN FAN

    IPC分类号： H01L33/06 ,  B82Y40/00

    CPC分类号： H01L51/50 ,  B82Y20/00 ,  B82Y30/00 ,  H01L21/0237 ,  H01L21/02444 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/005 ,  H01L33/007 ,  H01L33/02 ,  H01L33/14 ,  H01L33/20 ,  H01L33/22 ,  H01L33/40 ,  H01L2933/0016

    摘要： A method of making a LED includes following steps. A substrate with an epitaxial growth surface is provided. A carbon nanotube layer is placed on the epitaxial growth surface. A semiconductor epitaxial layer is grown on the epitaxial growth surface, and the semiconductor epitaxial layer includes an N-type semiconductor layer, an active layer, a P-type semiconductor layer. The semiconductor epitaxial layer is etched to expose part of the carbon nanotube layer. A first electrode is formed on a surface of the semiconductor epitaxial layer which is away from the substrate. A second electrode is formed to electrically connect with the part of the carbon nanotube layer which is exposed.

    摘要翻译： 制造LED的方法包括以下步骤。 提供了具有外延生长表面的衬底。 将碳纳米管层置于外延生长表面上。 在外延生长面上生长半导体外延层，半导体外延层包括N型半导体层，有源层，P型半导体层。 蚀刻半导体外延层以暴露部分碳纳米管层。 第一电极形成在远离衬底的半导体外延层的表面上。 第二电极形成为与暴露的碳纳米管层的部分电连接。

    LIGHT EMITTING DIODE
    127.
    发明申请
    LIGHT EMITTING DIODE 有权
    发光二极管

    公开(公告)号：US20120273754A1

    公开(公告)日：2012-11-01

    申请号：US13288187

    申请日：2011-11-03

    申请人： YANG WEI ,  SHOU-SHAN FAN

    发明人： YANG WEI ,  SHOU-SHAN FAN

    IPC分类号： H01L33/06 ,  B82Y20/00

    CPC分类号： H01L33/10 ,  B82Y99/00 ,  H01L33/20 ,  H01L33/382 ,  H01L33/40

    摘要： A light emitting diode includes a second electrode, a first semiconductor layer, an active layer, a second semiconductor layer, a reflector, and a first electrode. The second electrode, the first semiconductor layer, the active layer, the second semiconductor layer, and the reflector are stacked on the first electrode in that order. The first semiconductor layer defines a plurality of grooves on a surface contacting the second electrode. The plurality of grooves form a patterned surface used as the light extraction surface. A carbon nanotube layer is located on the patterned surface and embedded into the grooves.

    摘要翻译： 发光二极管包括第二电极，第一半导体层，有源层，第二半导体层，反射器和第一电极。 第二电极，第一半导体层，有源层，第二半导体层和反射器依次层叠在第一电极上。 第一半导体层在与第二电极接触的表面上限定多个凹槽。 多个槽形成用作光提取表面的图案化表面。 碳纳米管层位于图案化表面上并嵌入凹槽中。

    THERMOACOUSTIC DEVICE
    129.
    发明申请
    THERMOACOUSTIC DEVICE 有权
    热电器件

    公开(公告)号：US20120250904A1

    公开(公告)日：2012-10-04

    申请号：US13337231

    申请日：2011-12-26

    申请人： KAI-LI JIANG ,  XIAO-YANG LIN ,  LIN XIAO ,  SHOU-SHAN FAN

    发明人： KAI-LI JIANG ,  XIAO-YANG LIN ,  LIN XIAO ,  SHOU-SHAN FAN

    IPC分类号： H04R23/00

    CPC分类号： H04R23/002 ,  B82Y30/00 ,  Y10S977/733 ,  Y10S977/742 ,  Y10S977/932

    摘要： A thermoacoustic device includes a substrate, at least two sound wave generators and at least two signal input devices. The substrate has at least two surfaces. Each of the at least two sound wave generators is located on each of the at least two surfaces. At least one of the at least two sound wave generator includes a carbon film. The carbon film includes at least one carbon nanotube layer and at least one graphene layer stacked with each other. The at least two signal input devices are configured to input signals to the at least two sound wave generator in a one by one manner.

    摘要翻译： 热声装置包括基板，至少两个声波发生器和至少两个信号输入装置。 衬底具有至少两个表面。 所述至少两个声波发生器中的每一个位于所述至少两个表面中的每一个上。 至少两个声波发生器中的至少一个包括碳膜。 碳膜包括至少一个碳纳米管层和彼此堆叠的至少一个石墨烯层。 所述至少两个信号输入装置被配置为以一个一个方式向至少两个声波发生器输入信号。

    ELASTIC DEVICE USING CARBON NANOTUBE FILM
    130.
    发明申请
    ELASTIC DEVICE USING CARBON NANOTUBE FILM 有权
    使用碳纳米管膜的弹性装置

    公开(公告)号：US20120202050A1

    公开(公告)日：2012-08-09

    申请号：US13450737

    申请日：2012-04-19

    申请人： KAI-LI JIANG ,  CHEN FENG ,  LIN XIAO ,  ZHUO CHEN ,  LIANG LIU ,  SHOU-SHAN FAN ,  QUN-QING LI ,  LI QIAN ,  KAI LIU ,  YANG WEI

    发明人： KAI-LI JIANG ,  CHEN FENG ,  LIN XIAO ,  ZHUO CHEN ,  LIANG LIU ,  SHOU-SHAN FAN ,  QUN-QING LI ,  LI QIAN ,  KAI LIU ,  YANG WEI

    IPC分类号： B32B9/00 ,  B82Y30/00

    CPC分类号： G06F3/045 ,  B82Y30/00 ,  Y10T428/26 ,  Y10T428/30

    摘要： An elastic device includes a first elastic supporter; a second elastic supporter and a carbon nanotube film. The second elastic supporter is spaced from the first elastic supporter. The carbon nanotube film has a first side fixed on the first elastic supporter and a second side opposite to the first side and fixed on the second elastic supporter. The carbon nanotube film includes a plurality of first carbon nanotubes orientated primarily along a first direction and a plurality of second carbon nanotubes having orientations different from the first direction. At least one portion of each of the second carbon nanotubes contacts with at least two adjacent first carbon nanotubes. The carbon nanotube film is capable of elastic deformation along a second direction that is substantially perpendicular to the first direction.

    摘要翻译： 弹性装置包括第一弹性支撑件; 第二弹性支撑体和碳纳米管膜。 第二弹性支撑件与第一弹性支撑件间隔开。 碳纳米管膜具有固定在第一弹性支撑体上的第一侧和与第一侧相反的第二侧并且固定在第二弹性支撑体上。 碳纳米管膜包括主要沿着第一方向取向的多个第一碳纳米管和具有与第一方向不同的取向的多个第二碳纳米管。 每个第二碳纳米管的至少一部分与至少两个相邻的第一碳纳米管接触。 碳纳米管膜能够沿着与第一方向基本垂直的第二方向弹性变形。