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公开(公告)号:US20240201438A1
公开(公告)日:2024-06-20
申请号:US18084921
申请日:2022-12-20
Applicant: GlobalFoundries U.S. Inc.
Inventor: Yusheng Bian
IPC: G02B6/122 , G02B6/13 , H01L31/0232 , H01L31/028 , H01L31/105 , H01L31/18
CPC classification number: G02B6/1228 , G02B6/13 , H01L31/02327 , H01L31/028 , H01L31/105 , H01L31/1808
Abstract: Structures including a photodetector and methods of forming a structure including a photodetector. The structure comprises a photodetector including a pad having a side edge and a light-absorbing layer disposed on the pad. The structure further comprises a waveguide core including a tapered section positioned adjacent to the side edge of the pad and the light-absorbing layer. The tapered section has a width dimension that decreases with decreasing distance from the side edge of the pad.
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公开(公告)号:US20240176067A1
公开(公告)日:2024-05-30
申请号:US18058967
申请日:2022-11-28
Applicant: GlobalFoundries U.S. Inc.
Inventor: Shesh Mani Pandey , Yusheng Bian , Ravi Prakash Srivastava
CPC classification number: G02B6/12004 , G02B6/1228 , G02B6/136 , H01L25/167
Abstract: Structures and methods implement an enlarged multilayer nitride waveguide. The structure may include an inter-level dielectric (ILD) layer over a substrate. A first enlarged multilayer nitride waveguide is positioned in the ILD layer in a region of the substrate. A second multilayer nitride waveguide may also be provided in the ILD layer. A lower cladding layer defines a lower surface of the nitride waveguide(s). The lower cladding layer has a lower refractive index than the nitride waveguide(s). Additional lower refractive index cladding layers can be provided on the upper surface and/or sidewalls of the nitride waveguide(s). The enlarged nitride waveguide may be implemented with other conventional silicon and nitride waveguides.
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公开(公告)号:US20240085626A1
公开(公告)日:2024-03-14
申请号:US17941055
申请日:2022-09-09
Applicant: GlobalFoundries U.S. Inc.
Inventor: Yusheng Bian
CPC classification number: G02B6/126 , G02B6/1228 , G02B6/13 , G02B2006/12061
Abstract: Structures for a polarization rotator and methods of forming a structure for a polarization rotator. The structure comprises a first waveguide core having a first section, a second section, a first terminating end, and a second terminating end opposite to the first terminating end. The first and second sections of the first waveguide core are arranged between the first terminating end and the second terminating end. The structure further comprises a second waveguide core including a first tapered section having a first overlapping arrangement with the first section of the first waveguide core and a second tapered section having a second overlapping arrangement with the second section of the first waveguide core. The first waveguide core comprises a first material, and the second waveguide core comprises a second material different from the first material.
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公开(公告)号:US11886021B2
公开(公告)日:2024-01-30
申请号:US17705911
申请日:2022-03-28
Applicant: GlobalFoundries U.S. Inc.
Inventor: Yusheng Bian
CPC classification number: G02B6/4203 , G02B6/12002 , G02B6/1228 , G02B6/13 , G02B6/305
Abstract: Photonics structures including a slotted waveguide and methods of fabricating such photonics structures. The photonics structure includes a slotted waveguide having a first waveguide core and a second waveguide core laterally positioned adjacent to the first waveguide core. The first waveguide core is separated from the second waveguide core by a slot. The photonics structure further includes a metamaterial structure having a plurality of elements separated by a plurality of gaps and a dielectric material in the plurality of gaps. The metamaterial structure and the slot of the slotted waveguide are positioned with an overlapping arrangement.
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公开(公告)号:US11880065B2
公开(公告)日:2024-01-23
申请号:US17588470
申请日:2022-01-31
Applicant: GlobalFoundries U.S. Inc.
Inventor: Yusheng Bian , Steven M. Shank , Takako Hirokawa
CPC classification number: G02B6/12007 , G02B6/13 , G02B6/29338
Abstract: Structures including an edge coupler and methods of fabricating a structure including an edge coupler. The structure includes an edge coupler having a longitudinal axis, a first ring resonator, and a second ring resonator. The first ring resonator has a first center point that is spaced from the longitudinal axis of the edge coupler by a first perpendicular distance. The second ring resonator has a second center point that is spaced from the longitudinal axis of the edge coupler by a second perpendicular distance.
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公开(公告)号:US20240004140A1
公开(公告)日:2024-01-04
申请号:US17853186
申请日:2022-06-29
Applicant: GlobalFoundries U.S. Inc.
Inventor: Yusheng Bian
CPC classification number: G02B6/1228 , G02B6/13 , G02B2006/12121
Abstract: Structures for an edge coupler and methods of fabricating a structure for an edge coupler. The structure comprises an edge coupler including a first waveguide core and a second waveguide core. The first waveguide core is positioned in a vertical direction between the second waveguide core and a substrate. The first waveguide core has a first longitudinal axis, the second waveguide core has a second longitudinal axis, and the second longitudinal axis of the second waveguide core is slanted at an angle relative to the first longitudinal axis of the first waveguide core.
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公开(公告)号:US20230393339A1
公开(公告)日:2023-12-07
申请号:US17834375
申请日:2022-06-07
Applicant: GlobalFoundries U.S. Inc.
Inventor: Bartlomiej Jan Pawlak , Michal Rakowski , Yusheng Bian
CPC classification number: G02B6/2934 , G02B6/4215
Abstract: Structures including stacked photonics chips and methods of fabricating a structure including stacked photonics chips. The structure comprises a first chip including a first waveguide core, a ring resonator adjacent to a portion of the first waveguide core, and a first dielectric layer over the first waveguide core and the ring resonator. The first dielectric layer has a first surface. The structure further comprises a second chip including a second waveguide core and a second dielectric layer over the second waveguide core. The second dielectric layer has a second surface adjacent to the first surface of the first dielectric layer, and the second waveguide core is positioned adjacent to the ring resonator.
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128.
公开(公告)号:US11837851B2
公开(公告)日:2023-12-05
申请号:US17931933
申请日:2022-09-14
Applicant: GLOBALFOUNDRIES U.S. Inc.
Inventor: Yusheng Bian , Roderick A. Augur , Michal Rakowski , Kenneth J. Giewont , Karen A. Nummy
CPC classification number: H01S5/2018 , H01S5/20 , H01S5/2231 , H01S5/2232 , H01S5/3013 , H01S5/021 , H01S5/026 , H01S5/3054 , H01S5/32333
Abstract: A laser structure, including: a dielectric matrix formed of a first material; a laser source formed within the dielectric matrix and formed of a semiconductor material; and a plurality of side confining features formed within the dielectric matrix and extending parallel to and along a length of the laser source. The plurality of side confining features are formed of the semiconductor material.
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公开(公告)号:US11835764B2
公开(公告)日:2023-12-05
申请号:US17588440
申请日:2022-01-31
Applicant: GlobalFoundries U.S. Inc.
Inventor: Shesh Mani Pandey , Yusheng Bian , Judson Holt
CPC classification number: G02B6/136 , G02B2006/12061
Abstract: Waveguide structures and methods of fabricating a waveguide structure. The structure includes a first waveguide core, a second waveguide core, and a third waveguide core adjacent to the first waveguide core and the second waveguide core. The third waveguide core is laterally separated from the first waveguide core by a first slot, and the third waveguide core is laterally separated from the second waveguide core by a second slot. The first waveguide core and the second waveguide core comprise a first material, and the third waveguide core comprises a second material that is different in composition from the first material.
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公开(公告)号:US11822122B2
公开(公告)日:2023-11-21
申请号:US17462491
申请日:2021-08-31
Applicant: GLOBALFOUNDRIES U.S. INC.
Inventor: Yusheng Bian , Ajey Poovannummoottil Jacob , Steven M. Shank
CPC classification number: G02B6/1225 , G02B1/002 , G02B1/005 , G02B6/125 , G02B2006/1213 , G02B2006/12061 , G02B2006/12147
Abstract: The present disclosure relates to semiconductor structures and, more particularly, to waveguide structures with metamaterial structures and methods of manufacture. The structure includes: at least one waveguide structure; and metamaterial structures separated from the at least one waveguide structure by an insulator material, the metamaterial structures being structured to decouple the at least one waveguide structure to simultaneously reduce insertion loss and crosstalk of the at least one waveguide structure.
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