Memory address translation
    122.
    发明授权
    Memory address translation 有权
    内存地址转换

    公开(公告)号:US08898424B2

    公开(公告)日:2014-11-25

    申请号:US13859502

    申请日:2013-04-09

    Abstract: The present disclosure includes devices, systems, and methods for memory address translation. One or more embodiments include a memory array and a controller coupled to the array. The array includes a first table having a number of records, wherein each record includes a number of entries, wherein each entry includes a physical address corresponding to a data segment stored in the array and a logical address. The controller includes a second table having a number of records, wherein each record includes a number of entries, wherein each entry includes a physical address corresponding to a record in the first table and a logical address. The controller also includes a third table having a number of records, wherein each record includes a number of entries, wherein each entry includes a physical address corresponding to a record in the second table and a logical address.

    Abstract translation: 本公开包括用于存储器地址转换的装置,系统和方法。 一个或多个实施例包括存储器阵列和耦合到阵列的控制器。 阵列包括具有多个记录的第一表,其中每个记录包括多个条目,其中每个条目包括对应于阵列中存储的数据段的物理地址和逻辑地址。 控制器包括具有多个记录的第二表,其中每个记录包括多个条目,其中每个条目包括对应于第一表中的记录的物理地址和逻辑地址。 控制器还包括具有多个记录的第三表,其中每个记录包括多个条目,其中每个条目包括对应于第二表中的记录的物理地址和逻辑地址。

    MEMORY ADDRESS TRANSLATION
    125.
    发明申请
    MEMORY ADDRESS TRANSLATION 有权
    存储地址翻译

    公开(公告)号:US20130227247A1

    公开(公告)日:2013-08-29

    申请号:US13859502

    申请日:2013-04-09

    Abstract: The present disclosure includes devices, systems, and methods for memory address translation. One or more embodiments include a memory array and a controller coupled to the array. The array includes a first table having a number of records, wherein each record includes a number of entries, wherein each entry includes a physical address corresponding to a data segment stored in the array and a logical address. The controller includes a second table having a number of records, wherein each record includes a number of entries, wherein each entry includes a physical address corresponding to a record in the first table and a logical address. The controller also includes a third table having a number of records, wherein each record includes a number of entries, wherein each entry includes a physical address corresponding to a record in the second table and a logical address.

    Abstract translation: 本公开包括用于存储器地址转换的装置,系统和方法。 一个或多个实施例包括存储器阵列和耦合到阵列的控制器。 阵列包括具有多个记录的第一表,其中每个记录包括多个条目,其中每个条目包括对应于阵列中存储的数据段的物理地址和逻辑地址。 控制器包括具有多个记录的第二表,其中每个记录包括多个条目,其中每个条目包括对应于第一表中的记录的物理地址和逻辑地址。 控制器还包括具有多个记录的第三表,其中每个记录包括多个条目,其中每个条目包括对应于第二表中的记录的物理地址和逻辑地址。

    SELECTION CIRCUITRY
    126.
    发明申请

    公开(公告)号:US20250037755A1

    公开(公告)日:2025-01-30

    申请号:US18763395

    申请日:2024-07-03

    Abstract: Methods and apparatuses related to using non-zero selection circuitry. For example, the non-zero selection circuitry can determine whether a first word received from a first group of sense amplifiers has at least one bit having a first binary value, such as a logical “1”. In response to the first word being determined to have at least one bit having the first binary value, the first word can be outputted from the non-zero selection circuitry and a second word can be prevented from being outputted (even if the second word is determined to have at least one bit having the first binary value) at least while the first word is being outputted.

    MODIFIABLE REPAIR SOLUTIONS FOR A MEMORY ARRAY

    公开(公告)号:US20210407615A1

    公开(公告)日:2021-12-30

    申请号:US16914927

    申请日:2020-06-29

    Abstract: Methods, systems, and devices for modifiable repair solutions for a memory array are described to support storing repair information for a memory array within the memory array itself. A memory device may include the memory array and an on-die microprocessor, where the microprocessor may retrieve the repair information from the memory array and write the repair information to repair circuitry used for identifying defective memory addresses. The microprocessor may support techniques for identifying additional defects and updating the repair information during operation of the memory array. For example, the microprocessor may identify additional defects based on errors associated with one or more memory cells of the memory array or based on testing performed on one or more memory cells of the memory array. In some cases, a host device may identify additional defects and may notify the microprocessor of the additional defects.

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