公开(公告)号：USRE37177E1

公开(公告)日：2001-05-15

申请号：US09260865

申请日：1999-03-01

申请人： Masakazu Ukita ,  Akira Ishibashi

发明人： Masakazu Ukita ,  Akira Ishibashi

IPC分类号： H01S532

CPC分类号： B82Y20/00 ,  H01S5/0224 ,  H01S5/024 ,  H01S5/028 ,  H01S5/0421 ,  H01S5/06209 ,  H01S5/327 ,  H01S5/34333 ,  H01S5/347

摘要： A semiconductor laser comprises: a first cladding layer of a first conduction type; an active layer stacked on the first cladding layer; and a second cladding layer of a second conduction type stacked on the active layer. The first cladding layer, the active layer and the second cladding layer are made of II-VI compound semiconductors. Pulse oscillation occurs with characteristics of a threshold current Ith(A), a threshold voltage Vth(V) of the diode composed of the first cladding layer, the active layer and the second cladding layer, a differential resistance RS(Q) of the diode after the rising, a thermal resistance Rt(K/W) and a characteristic temperature T0(K). When two amounts &agr; and &bgr; are defined by: &agr;≡(Rt/T0)Ithvth &bgr;≡(Rt/T0)RSTth2 the point (&agr;,&bgr;) exists in an area on the &agr;-&bgr; plane surrounded by the straight line &agr;=0, the straight line &bgr;=0, and the curve ((2ln t−1)/t, (1−ln t)/t2) having t as a parameter. The semiconductor laser may include a first optical waveguide layer between the first cladding layer and the active layer and include a second optical waveguide layer between the second cladding layer and the active layer, the first optical waveguide layer and the second optical waveguide layer being made of II-VI compound semiconductors. II-VI compound semiconductors making the first cladding layer and the second cladding layer may be a ZnMgSSe compound semiconductor. A semiconductor laser using II-VI compound semiconductors and having the capability of continuous oscillation at high temperatures including the room temperature is provided.

摘要翻译： 半导体激光器包括：第一导电类型的第一包层; 堆叠在所述第一包层上的有源层; 以及层叠在有源层上的第二导电类型的第二包覆层。 第一包层，有源层和第二包层由II-VI化合物半导体制成。 脉冲振荡发生在阈值电流Ith（A），由第一包层，有源层和第二包层组成的二极管的阈值电压Vth（V），二极管的差分电阻RS（Q） 上升之后，具有热阻Rt（K / W）和特征温度T0（K）。 当α和β两个定义为：α（β，β）点存在于由直线α= 0包围的α-β平面上的区域，直线β= 0，曲线（（21n t -1）/ t，（1-ln t）/ t2）。 半导体激光器可以包括在第一包层和有源层之间的第一光波导层，并且在第二包层和有源层之间包括第二光波导层，第一光波导层和第二光波导层由 II-VI化合物半导体。 制造第一包层和第二包层的II-VI化合物半导体可以是ZnMgSSe化合物半导体。 提供了使用II-VI化合物半导体并且在包括室温在内的高温下具有连续振荡能力的半导体激光器。

公开(公告)号：US06222203B1

公开(公告)日：2001-04-24

申请号：US08878418

申请日：1997-06-18

申请人： Akira Ishibashi ,  Norikazu Nakayama

发明人： Akira Ishibashi ,  Norikazu Nakayama

IPC分类号： H01L3300

CPC分类号： B82Y20/00 ,  H01L27/156 ,  H01S5/327 ,  H01S5/34333 ,  H01S5/4087 ,  H01S5/423

摘要： A selfluminous display device having distinct blue (B), green (G) and red (R) light emission sources wherein the spectra of the light emission sources each have a narrow half band width (30 nm or less) at a level regarded as precursor delta functions, which do not mutually substantially overlap. Because light sources having spectra of limited peak values and extremely narrow limited widths are used, shape changes of the spectrum in each light source are suppressed in the wavelength space and can be regarded as purely magnitude changes. Therefore, it becomes possible to correct just by changing the strength for each light emission source, color reproducibility increases and there ceases to be any change over time in the colors.

摘要翻译： 具有不同的蓝色（B），绿色（G）和红色（R）发光源的自发光显示装置，其中发光源的光谱各自具有被视为前体的水平的窄半带宽（30nm或更小） delta函数不相互重叠。 由于使用具有有限峰值和极窄限制宽度的光谱的光源，所以在每个光源中的光谱的形状变化在波长空间中被抑制，并且可以被认为是纯粹的幅度变化。 因此，可以通过改变每个发光源的强度进行校正，颜色再现性增加，并且在颜色中不再存在随时间的任何变化。

公开(公告)号：US5909459A

公开(公告)日：1999-06-01

申请号：US30862

申请日：1998-02-26

申请人： Akira Ishibashi ,  Norikazu Nakayama ,  Satoru Kijima

发明人： Akira Ishibashi ,  Norikazu Nakayama ,  Satoru Kijima

IPC分类号： H01L33/06 ,  H01L33/12 ,  H01L33/28 ,  H01L33/38 ,  H01L33/42 ,  H01S5/00 ,  H01S5/042 ,  H01S5/183 ,  H01S5/327 ,  H01S5/347 ,  H01S3/19

CPC分类号： H01L33/42 ,  B82Y20/00 ,  H01L33/14 ,  H01L33/28 ,  H01L33/38 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/183 ,  H01S5/327 ,  H01S5/347

摘要： A surface-emitting semiconductor light emitting device comprises an n-type ZnSe buffer layer, n-type ZnSSe layer, n-type ZnMgSSe cladding layer, n-type ZnSSe waveguide layer, active layer, p-type ZnSSe waveguide layer, p-type ZnMgSSe cladding layer, p-type ZnSSe layer,p-type ZnSe contact layer, p-type ZnSe/ZnTe MQW layer and p-type ZnTe contact layer, sequentially stacked on an n-type GaAs substrate. A grid-shaped p-side electrode and a Au film convering the p-side electrode are provided on the p-type ZnTe contact layer. An n-side electrode is provided on the back surface of the n-type GaAs substrate. The active layer has a single quantum well structure or a multiple quantum structure including ZnCdSe quantum well layers.

摘要翻译： 表面发射半导体发光器件包括n型ZnSe缓冲层，n型ZnSSe层，n型ZnMgSSe覆层，n型ZnSSe波导层，有源层，p型ZnSSe波导层，p型 ZnMgSSe覆层，p型ZnSSe层，p型ZnSe接触层，p型ZnSe / ZnTe MQW层和p型ZnTe接触层，依次层叠在n型GaAs衬底上。 在p型ZnTe接触层上设置有形成p侧电极的栅状p侧电极和Au膜。 在n型GaAs衬底的背面设有n侧电极。 活性层具有单量子阱结构或包含ZnCdSe量子阱层的多量子结构。

公开(公告)号：US5828086A

公开(公告)日：1998-10-27

申请号：US826108

申请日：1997-03-24

申请人： Akira Ishibashi ,  Satoshi Matsumoto ,  Masaharu Nagai ,  Satoshi Ito ,  Shigetaka Tomiya ,  Kazushi Nakano ,  Etsuo Morita

发明人： Akira Ishibashi ,  Satoshi Matsumoto ,  Masaharu Nagai ,  Satoshi Ito ,  Shigetaka Tomiya ,  Kazushi Nakano ,  Etsuo Morita

IPC分类号： H01L33/06 ,  H01L33/28 ,  H01S5/30 ,  H01S5/32 ,  H01S5/347 ,  H01L33/00

CPC分类号： H01L33/28 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/347 ,  H01S2304/02 ,  H01S5/3059 ,  H01S5/3216

摘要： A semiconductor light emitting device ccomprises a first cladding layer, an active layer and a second cladding layer which are stacked on a semiconductor substrate. At least a part of the first cladding layer and the second cladding layer has a superlattice structure comprising II-VI compound semiconductor. Another semiconductor light emitting device comprises a first cladding layer, a first guide layer, an active layer, a second guide layer and a second cladding layer which are stacked on a semiconductor substrate. At least a part of the first cladding layer, the first guide layer, the second cladding layer and the second guide layer has a superlattice structure. Still anothr semiconductor light emitting device comprises a defect decomposing layer, a defect blocking layer, a first cladding layer, an active layer, a second cladding layer which are stacked on a semiconductor substrate. The defect decomposing layer and the defect blocking layer comprise a superlattice structure.

摘要翻译： 半导体发光器件包括堆叠在半导体衬底上的第一覆层，有源层和第二覆层。 第一包层和第二包层的至少一部分具有包含II-VI化合物半导体的超晶格结构。 另一种半导体发光器件包括堆叠在半导体衬底上的第一覆层，第一引导层，有源层，第二引导层和第二覆层。 第一包覆层，第一引导层，第二覆盖层和第二引导层的至少一部分具有超晶格结构。 还有一种半导体发光器件包括堆叠在半导体衬底上的缺陷分解层，缺陷阻挡层，第一覆层，有源层，第二覆层。 缺陷分解层和缺陷阻挡层包括超晶格结构。

公开(公告)号：US5811831A

公开(公告)日：1998-09-22

申请号：US719698

申请日：1996-09-27

申请人： Akira Ishibashi

发明人： Akira Ishibashi

IPC分类号： H01L29/06 ,  H01L21/18 ,  H01L29/66 ,  H01L29/68 ,  H01L29/80 ,  H01L29/812 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/109

CPC分类号： B82Y10/00 ,  H01L29/66075 ,  H01L29/66977 ,  H01L29/802 ,  H01L29/8122

摘要： A semiconductor device exploiting a quantum interference effect is disclosed. The device comprises: a semiconductor body; n-1 (n.gtoreq.3) rods of forbidden regions extending along one direction, the forbidden regions being rotationally asymmetric around the one direction and being changeable in cross sectional area; a channel region consisting of a plurality of elemental channel regions, the forbidden regions dividing the channel region into the plurality of elemental channel regions, each of the elemental channel regions forming a closed circuit and being defined around each of the forbidden regions, the channel region being multiply connected with connectivity of n; and source and drain electrodes electrically connected to one and another ends of the channel region along the one direction.

摘要翻译： 公开了一种利用量子干涉效应的半导体器件。 该装置包括：半导体本体; n-1（n> 3 = 3）的禁带区域沿着一个方向延伸，所述禁止区域围绕所述一个方向旋转不对称，并且在横截面积上是可变的; 由多个基本信道区域组成的信道区域，禁止区域将信道区域划分为多个基本信道区域，每个元素信道区域形成闭合电路，围绕每个禁止区域被限定，信道区域 与n的连通性相乘; 以及源极和漏极，沿着该一个方向电连接到沟道区的一端和另一端。

公开(公告)号：US5665977A

公开(公告)日：1997-09-09

申请号：US691536

申请日：1996-08-02

申请人： Akira Ishibashi ,  Satoshi Matsumoto ,  Masaharu Nagai ,  Satoshi Ito ,  Shigetaka Tomiya ,  Kazushi Nakano ,  Etsuo Morita

发明人： Akira Ishibashi ,  Satoshi Matsumoto ,  Masaharu Nagai ,  Satoshi Ito ,  Shigetaka Tomiya ,  Kazushi Nakano ,  Etsuo Morita

IPC分类号： H01L33/06 ,  H01L33/28 ,  H01S5/30 ,  H01S5/32 ,  H01S5/347 ,  H01L33/00

CPC分类号： H01L33/28 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/347 ,  H01S2304/02 ,  H01S5/3059 ,  H01S5/3216

摘要： A semiconductor light emitting device comprises a first cladding layer, an active layer and a second cladding layer which are stacked on a semiconductor substrate. At least a part of the first cladding layer and the second cladding layer has a superlattice structure comprising II-VI compound semiconductor. Another semiconductor light emitting device comprises a first cladding layer, a first guide layer, an active layer, a second guide layer and a second cladding layer which are stacked on semiconductor substrate. At least a part of the first cladding layer, the first guide layer, the second cladding layer and the second guide layer has a superlattice structure. Still another semiconductor light emitting device comprises a defect decomposing layer, a defect blocking layer, first cladding layer, an active layer, a second cladding layer which are stacked on a semiconductor substrate. The defect decomposing layer and the defect blocking layer comprise a superlattice structure.

摘要翻译： 半导体发光器件包括堆叠在半导体衬底上的第一覆层，有源层和第二覆层。 第一包层和第二包层的至少一部分具有包含II-VI化合物半导体的超晶格结构。 另一半导体发光器件包括堆叠在半导体衬底上的第一覆层，第一引导层，有源层，第二引导层和第二覆层。 第一包覆层，第一引导层，第二覆盖层和第二引导层的至少一部分具有超晶格结构。 另一半导体发光器件包括堆叠在半导体衬底上的缺陷分解层，缺陷阻挡层，第一覆层，有源层，第二覆层。 缺陷分解层和缺陷阻挡层包括超晶格结构。

公开(公告)号：US5465202A

公开(公告)日：1995-11-07

申请号：US205082

申请日：1994-03-03

申请人： Satoshi Ibori ,  Hitoshi Yamashita ,  Shigeyuki Baba ,  Hiroshi Fujii ,  Takatsugu Kambara ,  Akira Ishibashi

发明人： Satoshi Ibori ,  Hitoshi Yamashita ,  Shigeyuki Baba ,  Hiroshi Fujii ,  Takatsugu Kambara ,  Akira Ishibashi

IPC分类号： H02P3/22 ,  H02H3/247 ,  H02H7/12 ,  H02P27/06 ,  H02P27/08 ,  H02M5/45

CPC分类号： H02P27/08 ,  H02H3/247 ,  H02H7/1216 ,  H02P27/047

摘要： In a variable frequency power source unit, a series circuit of a contactless semiconductor switching element and a resistor is provided in parallel to a d.c. smoothing capacitor, and a control circuit is provided for receiving a signal for turning on the switching element selectively at any time after the power source is interrupted, thereby discharging the electric charge on the d.c. smoothing capacitor.

摘要翻译： 在可变频率电源单元中，非接触式半导体开关元件和电阻器的串联电路与直流电源并联设置。 平滑电容器，并且提供控制电路，用于在电源中断之后的任何时间选择性地接收用于接通开关元件的信号，从而在直流电上放电。 平滑电容器。

公开(公告)号：US5459337A

公开(公告)日：1995-10-17

申请号：US197310

申请日：1994-02-16

申请人： Satoshi Ito ,  Futoshi Hiei ,  Akira Ishibashi ,  Atsushi Toda ,  Norikazu Nakayama

发明人： Satoshi Ito ,  Futoshi Hiei ,  Akira Ishibashi ,  Atsushi Toda ,  Norikazu Nakayama

IPC分类号： H01L27/15 ,  H01L33/28 ,  H01L33/00

CPC分类号： H01L33/28 ,  H01L27/156 ,  Y10S438/925 ,  Y10S438/944

摘要： A light emitting device and a method of fabricating the same in which a first cladding layer is formed on a substrate, then red, green and blue light emitting portions each made of II-VI semiconductor are formed in a horizontal direction with respect to a surface of the substrate on the first cladding layer, then a second cladding layer is formed on the light emitting portions, and the red, green and blue light emitting portions are electrically separated from each other so that three primary color light emitting portions of a self luminous type are formed on the same substrate through single crystal growth process by changing composition of a compound semiconductor layer.

摘要翻译： 一种发光器件及其制造方法，其中在衬底上形成第一覆层，然后在水平方向上相对于表面形成由II-VI半导体制成的红色，绿色和蓝色发光部分 在第一包层上形成基板，然后在发光部分上形成第二包覆层，将红色，绿色和蓝色发光部分彼此电分离，使得自发光的三原色发光部分 通过改变化合物半导体层的组成，通过单晶生长工艺在相同的衬底上形成类型。

公开(公告)号：US5419854A

公开(公告)日：1995-05-30

申请号：US170805

申请日：1993-12-21

申请人： Masaki Wakabayashi ,  Akira Ishibashi

发明人： Masaki Wakabayashi ,  Akira Ishibashi

IPC分类号： G02F1/15 ,  H01B1/12 ,  H01M6/18 ,  G02F1/00 ,  H01M6/16

CPC分类号： H01M6/181 ,  G02F1/1525 ,  H01B1/122

摘要： An organic solid electrolyte and an electrochromic device using the electrolyte are disclosed. The organic solid electrolyte comprises in combination a monosaccharide represented by the general formula: (CH.sub.2 O)n wherein n is an integer of 5 to 7, or a derivative thereof, as at least part of a substrate, and a salt. The electrochromic device is manufactured by interposing the organic solid electrolyte between a transparent electrode having an electrochromic substance deposited thereon and a counter electrode.

摘要翻译： 公开了一种使用电解质的有机固体电解质和电致变色装置。 有机固体电解质组合由通式（CH 2 O）n表示的单糖，其中n为5-7的整数，或其衍生物，作为底物的至少一部分和盐。 电致变色装置是通过将有机固体电解质插入其上沉积有电致变色物质的透明电极和对电极之间来制造的。

公开(公告)号：US5418374A

公开(公告)日：1995-05-23

申请号：US70204

申请日：1993-06-02

申请人： Etsuo Morita ,  Shigetaka Tomiya ,  Tadashi Yamamoto ,  Akira Ishibashi

发明人： Etsuo Morita ,  Shigetaka Tomiya ,  Tadashi Yamamoto ,  Akira Ishibashi

IPC分类号： H01L21/205 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y40/00 ,  H01L29/06 ,  H01L29/80 ,  H01S5/00 ,  H01S5/22 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01L33/00 ,  H01S3/19

CPC分类号： H01S5/32325 ,  H01S5/2232 ,  H01L33/16 ,  H01S5/2201 ,  H01S5/223 ,  H01S5/2235 ,  H01S5/3202

摘要： A ridge or groove is formed on a major surface of a semiconductor substrate which is formed on a first electrode and whose major surface having a ridge or groove is slanted to a crystal axis direction from a {001} crystal plane. A first semiconductor layer is formed on the semiconductor substrate, then a semiconductor function layer deviating from a {111} B crystal plane is formed on the first semiconductor layer, then a second semiconductor layer is formed on the semiconductor function layer and then a second electrode is formed on the second semiconductor layer. The ridge or groove extends to the crystal axis direction, and at least one of the first semiconductor layer, the semiconductor function layer and the second semiconductor layer includes phosphorus.

摘要翻译： 在第一电极上形成的半导体衬底的主表面上的脊或沟槽，其主表面具有脊或沟槽，从{001}晶面倾斜到晶体轴方向。 在半导体衬底上形成第一半导体层，然后在第一半导体层上形成偏离{111} B晶面的半导体功能层，然后在半导体功能层上形成第二半导体层，然后形成第二电极 形成在第二半导体层上。 脊或槽延伸到<110>晶轴方向，并且第一半导体层，半导体功能层和第二半导体层中的至少一个包括磷。