公开(公告)号：US20190074361A1

公开(公告)日：2019-03-07

申请号：US16180580

申请日：2018-11-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kengo AKIMOTO ,  Daisuke KAWAE

IPC: H01L29/417 ,  H01L51/10 ,  H01L51/05 ,  H01L29/786 ,  H01L27/12 ,  H01L29/49 ,  H01L21/02

Abstract: A structure by which electric-field concentration which might occur between a source electrode and a drain electrode in a bottom-gate thin film transistor is relaxed and deterioration of the switching characteristics is suppressed, and a manufacturing method thereof. A bottom-gate thin film transistor in which an oxide semiconductor layer is provided over a source and drain electrodes is manufactured, and angle θ1 of the side surface of the source electrode which is in contact with the oxide semiconductor layer and angle θ2 of the side surface of the drain electrode which is in contact with the oxide semiconductor layer are each set to be greater than or equal to 20° and less than 90°, so that the distance from the top edge to the bottom edge in the side surface of each electrode is increased.

公开(公告)号：US20180226510A1

公开(公告)日：2018-08-09

申请号：US15942957

申请日：2018-04-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Ryosuke WATANABE ,  Junichiro SAKATA ,  Kengo AKIMOTO ,  Akiharu MIYANAGA ,  Takuya HIROHASHI ,  Hideyuki KISHIDA

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/04

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/04 ,  H01L29/045 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696

Abstract: To provide a transistor having a favorable electric characteristics and high reliability and a display device including the transistor. The transistor is a bottom-gate transistor formed using an oxide semiconductor for a channel region. An oxide semiconductor layer subjected to dehydration or dehydrogenation through heat treatment is used as an active layer. The active layer includes a first region of a superficial portion microcrystallized and a second region of the rest portion. By using the oxide semiconductor layer having such a structure, a change to an n-type, which is attributed to entry of moisture to the superficial portion or elimination of oxygen from the superficial portion, and generation of a parasitic channel can be suppressed. In addition, contact resistance between the oxide semiconductor layer and source and drain electrodes can be reduced.

公开(公告)号：US20180226434A1

公开(公告)日：2018-08-09

申请号：US15939918

申请日：2018-03-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kengo AKIMOTO ,  Atsushi UMEZAKI

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/24 ,  H01L29/423

Abstract: A pixel portion and a driver circuit driving the pixel portion are formed over the same substrate. At least a part of the driver circuit is formed using an inverted staggered thin film transistor in which an oxide semiconductor layer is used and a channel protective layer is provided over the oxide semiconductor layer serving as a channel formation region which is overlapped with the gate electrode. The driver circuit as well as the pixel portion is provided over the same substrate to reduce manufacturing costs.

公开(公告)号：US20180203547A1

公开(公告)日：2018-07-19

申请号：US15922238

申请日：2018-03-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo AKIMOTO ,  Hironobu TAKAHASHI ,  Yuki OKAMOTO ,  Isamu SHIGEMORI

IPC: G06F3/044 ,  G09G3/36 ,  G09G3/3233

CPC classification number: G06F3/044 ,  G06F3/0418 ,  G06F2203/04102 ,  G06F2203/04103 ,  G09G3/3233 ,  G09G3/3648 ,  G09G2320/029 ,  G09G2330/12 ,  G09G2380/02 ,  H01L27/3225 ,  H01L27/323 ,  H01L27/3262 ,  H01L2251/5338

Abstract: A flexible display device with high viewability is provided. The display device includes a first substrate, a second substrate, a first element layer, and a second element layer. The first element layer is positioned between the first substrate and the second substrate. The second element layer is positioned between the first substrate and the second substrate. The first element layer and the second element layer overlap with each other in a region. The first substrate and the second substrate have flexibility. The first element layer includes a display element and a first circuit. The display element is electrically connected to the first circuit. The second element layer includes a sensor element. The sensor element has a function of sensing distortion.

公开(公告)号：US20180203312A1

公开(公告)日：2018-07-19

申请号：US15915663

申请日：2018-03-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kengo AKIMOTO ,  Shigeki KOMORI ,  Hideki UOCHI ,  Tomoya FUTAMURA ,  Takahiro KASAHARA

IPC: G02F1/1362 ,  H01L27/12 ,  H01L33/00 ,  H01L27/02

CPC classification number: G02F1/136204 ,  H01L27/0248 ,  H01L27/1225 ,  H01L27/124 ,  H01L33/0041 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In order to take advantage of the properties of a display device including an oxide semiconductor, a protective circuit and the like having appropriate structures and a small occupied area are necessary. The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first oxide semiconductor layer over the gate insulating film; a channel protective layer covering a region which overlaps with a channel formation region of the first oxide semiconductor layer; and a first wiring layer and a second wiring layer each of which is formed by stacking a conductive layer and a second oxide semiconductor layer and over the first oxide semiconductor layer. The gate electrode is connected to a scan line or a signal line, the first wiring layer or the second wiring layer is directly connected to the gate electrode.

公开(公告)号：US20170285425A1

公开(公告)日：2017-10-05

申请号：US15623838

申请日：2017-06-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kengo AKIMOTO ,  Shigeki KOMORI ,  Hideki UOCHI ,  Tomoya FUTAMURA ,  Takahiro KASAHARA

IPC: G02F1/1362 ,  H01L33/00 ,  H01L27/02 ,  H01L27/12

CPC classification number: G02F1/136204 ,  H01L27/0248 ,  H01L27/1225 ,  H01L27/124 ,  H01L33/0041 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In order to take advantage of the properties of a display device including an oxide semiconductor, a protective circuit and the like having appropriate structures and a small occupied area are necessary. The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first oxide semiconductor layer over the gate insulating film; a channel protective layer covering a region which overlaps with a channel formation region of the first oxide semiconductor layer; and a first wiring layer and a second wiring layer each of which is formed by stacking a conductive layer and a second oxide semiconductor layer and over the first oxide semiconductor layer. The gate electrode is connected to a scan line or a signal line, the first wiring layer or the second wiring layer is directly connected to the gate electrode.

公开(公告)号：US20170077444A1

公开(公告)日：2017-03-16

申请号：US15344036

申请日：2016-11-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Koichiro TANAKA ,  Masaaki HIROKI ,  Hisao IKEDA ,  Kengo AKIMOTO

IPC: H01L51/52

CPC classification number: H01L51/5246 ,  H01L51/50 ,  H01L51/5212 ,  H01L51/5237 ,  H01L51/524 ,  H01L51/525 ,  H01L51/5253 ,  H01L51/5256 ,  H01L51/5259 ,  H01L51/5275 ,  H01L2251/50 ,  H01L2251/53 ,  H01L2251/5307 ,  H01L2251/5323 ,  H01L2251/5338 ,  H01L2251/5361

Abstract: A highly reliable light-emitting device which includes an organic EL element and is lightweight is provided. The light-emitting device includes a first organic resin layer; a first glass layer over the first organic resin layer; a light-emitting element over the first glass layer; a second glass layer over the light-emitting element; and a second organic resin layer over the second glass layer. The first organic resin layer and the first glass layer each have a property of transmitting visible light. The thickness of the first glass layer and the thickness of the second glass layer are independently greater than or equal to 25 μm and less than or equal to 100 μm. The light-emitting element includes a first electrode having a property of transmitting visible light, a layer containing a light-emitting organic compound, and a second electrode stacked in this order from the first glass layer side.

Abstract translation: 提供了包括有机EL元件并且重量轻的高度可靠的发光装置。 发光装置包括第一有机树脂层; 第一有机树脂层上的第一玻璃层; 在第一玻璃层上的发光元件; 在所述发光元件上方的第二玻璃层; 和在第二玻璃层上的第二有机树脂层。 第一有机树脂层和第一玻璃层各具有透射可见光的性质。 第一玻璃层的厚度和第二玻璃层的厚度独立地大于或等于25μm且小于或等于100μm。 发光元件包括具有透射可见光的特性的第一电极，含有发光有机化合物的层和从第一玻璃层侧依次层叠的第二电极。

公开(公告)号：US20170033228A1

公开(公告)日：2017-02-02

申请号：US15229363

申请日：2016-08-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hidekazu MIYAIRI ,  Kengo AKIMOTO ,  Kojiro SHIRAISHI

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/016 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/15 ,  H01L27/3225 ,  H01L27/3241 ,  H01L27/3248 ,  H01L27/3258 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66742 ,  H01L29/786 ,  H01L29/78618

Abstract: In an active matrix display device, electric characteristics of thin film transistors included in a circuit are important, and performance of the display device depends on the electric characteristics. Thus, by using an oxide semiconductor film including In, Ga, and Zn for an inverted staggered thin film transistor, variation in electric characteristics of the thin film transistor can be reduced. Three layers of a gate insulating film, an oxide semiconductor layer and a channel protective layer are successively formed by a sputtering method without being exposed to air. Further, in the oxide semiconductor layer, the thickness of a region overlapping with the channel protective film is larger than that of a region in contact with a conductive film.

Abstract translation: 在有源矩阵显示装置中，包括在电路中的薄膜晶体管的电特性是重要的，显示装置的性能取决于电特性。 因此，通过使用包括In，Ga和Zn的氧化物半导体膜用于反向交错薄膜晶体管，可以减小薄膜晶体管的电特性的变化。 通过溅射法连续地形成三层栅极绝缘膜，氧化物半导体层和沟道保护层，而不暴露于空气。 此外，在氧化物半导体层中，与沟道保护膜重叠的区域的厚度大于与导电膜接触的区域的厚度。

公开(公告)号：US20170032728A1

公开(公告)日：2017-02-02

申请号：US15218135

申请日：2016-07-25

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yukinori SHIMA ,  Kengo AKIMOTO ,  Yuki OKAMOTO

IPC: G09G3/20 ,  G06F3/041 ,  G02F1/1368 ,  G06F3/042 ,  H01L27/32 ,  H01L29/786

CPC classification number: G06F3/0412 ,  G02F1/13318 ,  G06F3/042 ,  G09G3/3233 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2310/0262 ,  G09G2320/045 ,  G09G2320/0626 ,  G09G2360/144 ,  G09G2380/02 ,  H01L27/1225 ,  H01L27/3244 ,  H01L29/7869

Abstract: A display device having high visibility regardless of illuminance of external light is provided. A display device with reduced power consumption is provided. The display device includes a first light-receiving circuit including a first light-receiving element; and a pixel circuit including a display element. The first light-receiving circuit and the pixel circuit are formed over the same substrate. The gray level of the display element is changed according to a change in the amount of light to which the first light-receiving element is exposed. In particular, the gray level of the display element is decreased with a decrease in the amount of light exposure.

Abstract translation: 提供了一种具有高可见度的显示装置，而不管外部光的照度如何。 提供了具有降低功耗的显示装置。 该显示装置包括：第一光接收电路，包括第一光接收元件; 以及包括显示元件的像素电路。 第一光接收电路和像素电路形成在相同的基板上。 显示元件的灰度级根据第一受光元件曝光的光量的变化而变化。 特别地，随着曝光量的减少，显示元件的灰度级降低。

公开(公告)号：US20160372608A1

公开(公告)日：2016-12-22

申请号：US15254529

申请日：2016-09-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hidekazu MIYAIRI ,  Kengo AKIMOTO ,  Yasuo NAKAMURA

IPC: H01L29/786 ,  H01L29/49

CPC classification number: H01L29/78696 ,  H01L21/02323 ,  H01L21/02565 ,  H01L21/32139 ,  H01L21/465 ,  H01L21/467 ,  H01L21/4763 ,  H01L21/47635 ,  H01L27/1225 ,  H01L29/0692 ,  H01L29/1033 ,  H01L29/24 ,  H01L29/263 ,  H01L29/42364 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/495 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78633 ,  H01L29/7869 ,  H01L29/78693

Abstract: To provide a method by which a semiconductor device including a thin film transistor with excellent electric characteristics and high reliability is manufactured with a small number of steps. After a channel protective layer is formed over an oxide semiconductor film containing In, Ga, and Zn, a film having n-type conductivity and a conductive film are formed, and a resist mask is formed over the conductive film. The conductive film, the film having n-type conductivity, and the oxide semiconductor film containing In, Ga, and Zn are etched using the channel protective layer and gate insulating films as etching stoppers with the resist mask, so that source and drain electrode layers, a buffer layer, and a semiconductor layer are formed.