公开(公告)号：US20100270649A1

公开(公告)日：2010-10-28

申请号：US12812697

申请日：2009-02-16

申请人： Keiji Ishibashi ,  Hidenori Mikami ,  Naoki Matsumoto

发明人： Keiji Ishibashi ,  Hidenori Mikami ,  Naoki Matsumoto

IPC分类号： H01L29/20

CPC分类号： H01L21/02021 ,  C30B29/403 ,  C30B33/00 ,  H01L24/32 ,  H01L33/0075 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/12041 ,  H01L2924/12042 ,  Y10S438/928 ,  Y10S438/959 ,  Y10S438/977 ,  H01L2924/00014 ,  H01L2924/00

摘要： A nitride semiconductor wafer is planar-processed by grinding a bottom surface of the wafer, etching the bottom surface by, e.g., KOH for removing a bottom process-induced degradation layer, chamfering by a rubber whetstone bonded with 100 wt %-60 wt % #3000-#600 diamond granules and 0 wt %-40 wt % oxide granules, grinding and polishing a top surface of the wafer, etching the top surface for eliminating a top process-induced degradation layer and maintaining a 0.5 μm-10 μm thick edge process-induced degradation layer.

摘要翻译： 氮化物半导体晶片通过研磨晶片的底面进行平面加工，例如通过KOH去除底部工艺诱导的降解层，蚀刻底面，通过与100重量％-60重量％粘合的橡胶砂轮倒角， ＃3000-＃600金刚石颗粒和0重量％-40重量％的氧化物颗粒，研磨和抛光晶片的顶表面，蚀刻顶表面以消除顶部工艺诱导的降解层并保持0.5μm-10μm厚 边缘过程诱导的降解层。

公开(公告)号：US20100244880A1

公开(公告)日：2010-09-30

申请号：US12412364

申请日：2009-03-27

申请人： Yasuhiro Urabe ,  Naoki Matsumoto ,  Yuji Kuwana

发明人： Yasuhiro Urabe ,  Naoki Matsumoto ,  Yuji Kuwana

IPC分类号： G01R31/26 ,  H03B1/00

CPC分类号： G01R31/2889 ,  G01R31/31924

摘要： Provided is a test apparatus that tests a device under test, comprising a driver circuit that generates an output signal according to a prescribed input pattern, and supplies the output signal to the device under test; and a measuring section that measures a response signal output by the device under test to judge the acceptability of the device under test, wherein the driver circuit includes an input gate drive section that selects one of a plurality of input drive voltages supplied thereto, according to a logic value of the input pattern, and outputs the selected input drive voltage; a voltage switching section that includes a transistor and that outputs the output signal according to the drain voltage of the transistor, the transistor having a gate terminal that receives the input drive voltage output by the input gate drive section and a source terminal to which is applied a prescribed reference voltage; and an input drive voltage supplying section that generates the input drive voltages according to the reference voltage, and supplies the input drive voltages to the input gate drive section.

摘要翻译： 提供了一种测试被测设备的测试装置，包括根据规定的输入模式产生输出信号的驱动电路，并将输出信号提供给被测器件; 以及测量部，其测量由所述被测设备输出的响应信号，判断被测设备的可接受性，其中，所述驱动电路包括：输入栅极驱动部，其根据所述输入栅极驱动部选择供给的多个输入驱动电压中的一个， 输入图案的逻辑值，并输出所选择的输入驱动电压; 电压切换部，其包括晶体管，并且根据所述晶体管的漏极电压输出所述输出信号，所述晶体管具有接收由所述输入栅极驱动部输出的输入驱动电压的栅极端子和施加到所述输入栅极驱动部的源极端子 规定的参考电压; 以及输入驱动电压供给部，其根据所述基准电压生成所述输入驱动电压，并将所述输入驱动电压提供给所述输入栅极驱动部。

公开(公告)号：US07786488B2

公开(公告)日：2010-08-31

申请号：US12394477

申请日：2009-02-27

申请人： Masahiro Nakayama ,  Naoki Matsumoto ,  Koshi Tamamura ,  Masao Ikeda

发明人： Masahiro Nakayama ,  Naoki Matsumoto ,  Koshi Tamamura ,  Masao Ikeda

IPC分类号： H01L31/0312

CPC分类号： H01L21/02008 ,  B24B37/08 ,  H01L21/02024 ,  Y10S438/959

摘要： Nitride semiconductor wafers which are produced by epitaxially grown nitride films on a foreign undersubstrate in vapor phase have strong inner stress due to misfit between the nitride and the undersubstrate material. A GaN wafer which has made by piling GaN films upon a GaAs undersubstrate in vapor phase and eliminating the GaAs undersubstrate bends upward due to the inner stress owing to the misfit of lattice constants between GaN and GaAs.

摘要翻译： 由氮化物和下衬底材料之间的失配导致的，由外延生长的氮化物膜在气相中的外来下衬衬底产生的氮化物半导体晶片具有很强的内部应力。 通过在气相中在GaAs下衬底上堆叠GaN膜而消除GaAs下衬层而制成的GaN晶片由于内部应力而由于GaN和GaAs之间的晶格常数的失配而向上弯曲。

公开(公告)号：US07723142B2

公开(公告)日：2010-05-25

申请号：US12130082

申请日：2008-05-30

申请人： Naoki Matsumoto ,  Fumitaka Sato ,  Seiji Nakahata ,  Takuji Okahisa ,  Koji Uematsu

发明人： Naoki Matsumoto ,  Fumitaka Sato ,  Seiji Nakahata ,  Takuji Okahisa ,  Koji Uematsu

IPC分类号： H01L21/00 ,  H01L31/20

CPC分类号： C30B29/406 ,  C30B25/20

摘要： A method of producing a GaN crystal is directed to growing a GaN crystal on a GaN seed crystal substrate. The method includes the steps of preparing a GaN seed crystal substrate including a first dopant such that the thermal expansion coefficient of the GaN seed crystal substrate becomes greater than that of the GaN crystal, and growing the GaN crystal to a thickness of at least 1 mm on the GaN seed crystal substrate. Accordingly, there can be provided a method of producing a GaN crystal that can suppress generation of a crack and grow a thick GaN crystal, and a GaN crystal substrate.

摘要翻译： 制造GaN晶体的方法涉及在GaN晶种衬底上生长GaN晶体。 该方法包括以下步骤：制备包括第一掺杂剂的GaN晶种衬底，使得GaN晶种衬底的热膨胀系数变得大于GaN晶体的热膨胀系数，并将GaN晶体生长至至少1mm的厚度 在GaN晶种衬底上。 因此，可以提供一种能够抑制裂纹的产生和生长厚GaN的晶体的GaN晶体的制造方法以及GaN晶体基板。

公开(公告)号：US20100060325A1

公开(公告)日：2010-03-11

申请号：US12583450

申请日：2009-08-20

申请人： Naoki Matsumoto ,  Takashi Sekino

发明人： Naoki Matsumoto ,  Takashi Sekino

IPC分类号： H03K3/00

CPC分类号： H03K19/0175 ,  G01R31/31924 ,  H04L25/03343

摘要： A driver circuit includes a main driver which receives an input signal and outputs a first signal corresponding to the input signal, a sub driver which receives the input signal and outputs a non-inverted signal and an inverted signal corresponding to the input signal, a differentiating circuit including resistors and a variable capacity condenser, which outputs signals by differentiating the non-inverted signal and the inverted signal, respectively, and an addition unit which outputs a high frequency emphasized signal given by adding the output signal of the main driver and the signal given by differentiating the non-inverted signal, or a low frequency emphasized signal given by adding the output signal of the main driver and the signal given by differentiating the inverted signal.

摘要翻译： 驱动电路包括主驱动器，其接收输入信号并输出​​对应于输入信号的第一信号;子驱动器，其接收输入信号并输出​​与输入信号相对应的非反相信号和反相信号;微分 电路包括电阻器和可变容量电容器，其分别通过区分非反相信号和反相信号来输出信号;以及加法单元，其输出通过将主驱动器和信号的输出信号相加而给出的高频重点信号 通过差分非反相信号给出，或者通过将主驱动器的输出信号和由反相信号进行微分而给出的信号相加给出的低频强调信号。

公开(公告)号：US20090273060A1

公开(公告)日：2009-11-05

申请号：US12432105

申请日：2009-04-29

申请人： Keiji ISHIBASHI ,  Naoki Matsumoto ,  Masato Irikura

发明人： Keiji ISHIBASHI ,  Naoki Matsumoto ,  Masato Irikura

IPC分类号： H01L29/20 ,  H01L21/304 ,  H01L21/306 ,  H01L21/20

CPC分类号： H01L21/02013 ,  C30B29/403 ,  C30B33/00 ,  H01L21/02024 ,  H01L24/32 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/12041 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method for surface treatment of a group III nitride crystal includes the steps of lapping a surface of a group III nitride crystal using a hard abrasive grain with a Mohs hardness higher than 7, and abrasive-grain-free polishing the lapped surface of the group III nitride crystal using a polishing solution without containing abrasive grain, and the polishing solution without containing abrasive grain has a pH of not less than 1 and not more than 6, or not less than 8.5 and not more than 14. Accordingly, the method for surface treatment of a group III nitride crystal can be provided according to which hard abrasive grains remaining at the lapped crystal can be removed to reduce impurities at the crystal surface.

摘要翻译： 用于III族氮化物晶体的表面处理的方法包括以下步骤：使用莫氏硬度高于7的硬磨粒研磨III族氮化物晶体的表面，并且对该组的研磨表面进行无磨粒抛光 使用不含磨粒的研磨液的III族氮化物结晶，不含磨粒的研磨液的pH为1以上且6以下，8.5以下且14以下。因此， 可以提供III族氮化物晶体的表面处理，根据该III族氮化物晶体的表面处理可以去除在研磨晶体上残留的硬磨粒以减少晶体表面的杂质。

公开(公告)号：US07584714B2

公开(公告)日：2009-09-08

申请号：US10953791

申请日：2004-09-30

申请人： Lee Chen ,  Caiz Hong Tian ,  Naoki Matsumoto

发明人： Lee Chen ,  Caiz Hong Tian ,  Naoki Matsumoto

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01J37/32522 ,  H01J37/32192 ,  H01J37/3222

摘要： A surface wave plasma (SWP) source having an electromagnetic (EM) wave launcher configured to couple EM energy in a desired EM wave mode to a plasma by generating a surface wave on a plasma surface of the EM wave launcher adjacent the plasma. A power coupling system is coupled to the EM wave launcher, and configured to provide the EM energy to the EM wave launcher for forming the plasma. A mode scrambler coupled to the plasma surface of the EM wave launcher, and configured to reduce mode jumping between the desired EM wave mode and another EM wave mode.

摘要翻译： 一种具有电磁（EM）波发射器的表面波等离子体（SWP）源，其被配置为通过在等离子体附近的EM波发射器的等离子体表面上产生表面波来将期望的EM波模式中的EM能量耦合到等离子体。 功率耦合系统耦合到EM波发射器，并且被配置为向用于形成等离子体的EM波发射器提供EM能量。 耦合到所述EM波发射器的等离子体表面并且被配置为减少所期望的EM波模式和另一EM波模式之间的模式跳跃的模式扰频器。

公开(公告)号：US20090184312A1

公开(公告)日：2009-07-23

申请号：US12296622

申请日：2007-04-12

申请人： Masakazu Nishiyama ,  Naoki Matsumoto ,  Takanori Miyazaki ,  Takeshi Kanbara

发明人： Masakazu Nishiyama ,  Naoki Matsumoto ,  Takanori Miyazaki ,  Takeshi Kanbara

IPC分类号： H01L51/00 ,  C07C211/00

CPC分类号： C07C211/61 ,  C07C2603/40 ,  C07C2603/94 ,  C07C2603/97 ,  C09K11/06 ,  C09K2211/1007 ,  C09K2211/1011 ,  C09K2211/1014 ,  H01L51/0054 ,  H01L51/006 ,  H01L51/5012 ,  H01L51/5048 ,  H01L51/5088 ,  H05B33/14

摘要： A novel material having high hole-transporting ability and a high glass transition temperature and having long-lasting durability is obtained.A benzofluorene compound represented by formula (1) is used. (In the formula, M is a substituted or unsubstituted aryl group having 6-40 carbon atoms or a substituted or unsubstituted heteroaryl group having 5-40 carbon atoms; Ar1 to Ar4 each independently is a substituted or unsubstituted aryl group having 6-40 carbon atoms or a substituted or unsubstituted heteroaryl group having 5-40 carbon atoms, provided that at least one of Ar1 to Ar4 is a substituent represented by any of the following formulae (2) to (5); and p is an integer of 0-2.) (In the formulae, R1 to R4 each independently is a hydrogen atom, a halogen atom, a substituted or unsubstituted amino group, a linear, branched, or cyclic alkyl group, a linear, branched, or cyclic alkoxy group, a substituted or unsubstituted aryl group having 6-40 carbon atoms, or a substituted or unsubstituted aryloxy group having 6-40 carbon atoms, provided that R1 and R2 may be bonded to each other to form a ring.)

摘要翻译： 获得具有高空穴传输能力和高玻璃化转变温度并具有持久耐久性的新型材料。 使用由式（1）表示的苯并芴化合物。 （式中，M为取代或未取代的碳原子数为6〜40的芳基或取代或未取代的碳原子数为5〜40的杂芳基，Ar 1〜Ar 4各自独立地为取代或未取代的碳原子数为6〜40的芳基 原子或具有5-40个碳原子的取代或未取代的杂芳基，条件是Ar 1至Ar 4中的至少一个为由下式（2）至（5）中的任一个表示的取代基; p为0〜 （式中，R 1〜R 4各自独立地为氢原子，卤素原子，取代或未取代的氨基，直链状，支链状或环状的烷基，直链状，支链状或环状的烷氧基， 取代或未取代的具有6-40个碳原子的芳基或取代或未取代的具有6-40个碳原子的芳氧基，条件是R 1和R 2可以彼此键合形成环。

公开(公告)号：US07538582B2

公开(公告)日：2009-05-26

申请号：US11262507

申请日：2005-10-28

申请人： Naoki Matsumoto ,  Takashi Sekino ,  Toshiaki Awaji

发明人： Naoki Matsumoto ,  Takashi Sekino ,  Toshiaki Awaji

IPC分类号： H03K19/094

CPC分类号： G01R31/31928 ,  G01R31/31924

摘要： A test apparatus for testing a device under test is provided. The test apparatus includes a test signal generating section for generating a test signal to be provided to the device under test, a driver circuit for providing the test signal to the device under test and a determination section for determining whether is good or bad of the device under test based on the output signal outputted by the device under test according to the test signal. The driver circuit includes a main driver and a sub-driver for outputting drive signals according to the test signal, respectively, a differentiating circuit for outputting a differentiated signal obtained by differentiating the drive signal outputted by the sub-driver and an adding section for providing a signal having the waveform according to the test signal which is obtained by adding the differentiated signal to the drive signal outputted by the main driver to the device under test.

摘要翻译： 提供了一种用于测试被测设备的测试设备。 测试装置包括：测试信号产生部分，用于产生要提供给被测设备的测试信号;驱动器电路，用于将测试信号提供给被测器件;以及确定部分，用于确定器件的良好或坏 根据被测设备根据测试信号输出的输出信号进行测试。 驱动器电路包括主驱动器和副驱动器，用于分别根据测试信号输出驱动信号;差分电路，用于输出通过对由子驱动器输出的驱动信号进行微分而获得的微分信号;以及加法部分，用于提供 具有根据测试信号的波形的信号，该信号通过将微分信号与由主驱动器输出的驱动信号相加到被测器件而获得。

公开(公告)号：US07464702B2

公开(公告)日：2008-12-16

申请号：US11646397

申请日：2006-12-28

申请人： Naoki Matsumoto

发明人： Naoki Matsumoto

IPC分类号： B28D1/00

CPC分类号： H01L21/02027 ,  B28D5/045 ,  C09G1/02 ,  C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  H01L21/302 ,  H01L29/2003 ,  Y10T83/9292

摘要： An ingot 3 of a hexagonal III-nitride crystal is cut using a wire array 21 composed of a wire 22. On this occasion, the ingot 3 is cut in such a manner that the ingot 3 is sliced with supply of an abrasive fluid while feeding at least one of the ingot 3 and wire 22 in a direction perpendicular to an extending direction B of the wire 22. During cutting the ingot 3, the extending direction B of the wire 22 is inclined at 3° or more to the {1-100} plane of the ingot 3.

摘要翻译： 使用由线22构成的线阵列21切割六边形III族氮化物晶体的锭3.在这种情况下，锭3被切割，使得锭3在供给时供给研磨液而切片 锭3和线22中的至少一个在与线22的延伸方向B垂直的方向上。在切割锭3期间，线22的延伸方向B相对于{1- 100}平面3。