公开(公告)号：US20080085477A1

公开(公告)日：2008-04-10

申请号：US11977833

申请日：2007-10-26

Applicant: Steven Verhaverbeke ,  J. Truman ,  Christopher Lane ,  Sasson Somekh

Inventor： Steven Verhaverbeke ,  J. Truman ,  Christopher Lane ,  Sasson Somekh

IPC: G03F1/10

CPC classification number: H01L21/67207 ,  G03F7/16 ,  H01L21/67115 ,  H01L21/67161 ,  H01L21/67173 ,  H01L21/67184 ,  H01L21/6719 ,  Y10S414/135 ,  Y10S414/141 ,  Y10S438/905

Abstract: A method of a single wafer wet/dry cleaning apparatus comprising: a transfer chamber having a wafer handler contained therein; a first single wafer wet cleaning chamber directly coupled to the transfer chamber; and a first single wafer ashing chamber directly coupled to the transfer chamber.

Abstract translation: 一种单晶片湿式/干式清洗设备的方法，包括：一个传送室，其中包含一个晶片处理器; 直接耦合到传送室的第一单晶片湿清洁室; 以及直接耦合到传送室的第一单个晶片灰化室。

公开(公告)号：US20080050679A1

公开(公告)日：2008-02-28

申请号：US11678034

申请日：2007-02-22

Applicant: Mohsen Salek ,  Tetsuya Ishikawa ,  Christoper Beaudry ,  Steven Verhaverbeke ,  Helen Armer ,  Harald Herchen ,  Leon Volfovsky

Inventor： Mohsen Salek ,  Tetsuya Ishikawa ,  Christoper Beaudry ,  Steven Verhaverbeke ,  Helen Armer ,  Harald Herchen ,  Leon Volfovsky

IPC: G03C5/29 ,  G03B27/58

CPC classification number: G03B27/58 ,  G03F7/70341

Abstract: A method of processing a substrate includes forming a coating layer over a front surface of the substrate and exposing the coating layer in an immersion scanner. The coating layer may include a photoresist layer. The method also includes performing one or more immersion processes on the substrate after exposure. As an example, the one or more immersion processes include an immersion post-exposure bake process.

Abstract translation: 一种处理衬底的方法包括在衬底的前表面上形成涂层，并在浸没式扫描仪中曝光该涂层。 涂层可以包括光致抗蚀剂层。 该方法还包括在曝光之后在衬底上执行一个或多个浸渍处理。 作为示例，一个或多个浸渍处理包括浸渍曝光后烘烤处理。

公开(公告)号：US20080032906A1

公开(公告)日：2008-02-07

申请号：US11873261

申请日：2007-10-16

Applicant: Steven Verhaverbeke

Inventor： Steven Verhaverbeke

IPC: C11D7/32

CPC classification number: H01L21/02052 ,  C11D1/66 ,  C11D1/72 ,  C11D3/044 ,  C11D3/33 ,  C11D11/0047 ,  C11D11/007

Abstract: Embodiments of the current invention describe ammonia hydroxide treatments for surfaces. In one embodiment, a method and a cleaning solution including ammonium hydroxide (NH4OH), water (H2O), a chelating agent, and a surfactant for cleaning silicon germanium substrates are described. The cleaning solution does not include hydrogen peroxide (H2O2) because hydrogen peroxide etches germanium. In another embodiment, a method of terminating oxidized surfaces on semiconductor substrates with terminating groups that promote the bonding of the oxidized surface to another surface with a surface treatment containing ammonium hydroxide (NH4OH) is described. The oxidized surface is immediately bonded to a second substrate after evaporation of the surface treatment.

Abstract translation: 本发明的实施方案描述了表面的氨氢氧化物处理。 在一个实施方案中，包括氢氧化铵（NH 4 OH），水（H 2 O 2 O），螯合剂和用于清洁硅的表面活性剂的方法和清洗溶液 描述锗基底。 由于过氧化氢蚀刻锗，清洗溶液不包括过氧化氢（H 2 O 2 O 2）。 在另一个实施方案中，描述了通过含有氢氧化铵（NH 4 OH）的表面处理促进氧化表面与另一表面结合的端基的半导体衬底上的氧化表面的方法。 蒸发表面处理后，氧化表面立即与第二基板结合。

公开(公告)号：US20070181165A1

公开(公告)日：2007-08-09

申请号：US11347516

申请日：2006-02-03

Applicant: Steven Verhaverbeke

Inventor： Steven Verhaverbeke

IPC: C23G5/00 ,  C23G1/00

CPC classification number: C23G5/032 ,  G03F7/422 ,  G03F7/423 ,  Y10S134/902

Abstract: Described herein is a method of removing an organic-containing material from an exposed surface of a large substrate (at least 0.25 m2). The substrate may comprise an electronic device. The exposed surface is treated with a stripping solution comprising ozone (O3) in a solvent, where the solvent comprises acetic anhydride. The stripping solvent used to form the stripping solution may comprise a mixture of acetic anhydride with a co-solvent selected from the group consisting of a carbonate containing 2-4 carbon atoms, ethylene glycol diacetate, and combinations thereof. In some instances, the stripping solution may contain only acetic anhydride and ozone, where the ozone concentration is typically about 300 ppm or greater.

Abstract translation: 本文描述了从大基材的暴露表面去除含有机物的材料（至少0.25μm2以上）的方法。 衬底可以包括电子器件。 暴露的表面在溶剂中用包含臭氧（O 3 N 3）的汽提溶液处理，其中溶剂包括乙酸酐。 用于形成汽提溶液的汽提溶剂可以包括乙酸酐与选自含2-4个碳原子的碳酸酯，乙二醇二乙酸酯及其组合的共溶剂的混合物。 在一些情况下，汽提溶液可以仅含有乙酸酐和臭氧，其中臭氧浓度通常为约300ppm或更高。

公开(公告)号：US07235479B2

公开(公告)日：2007-06-26

申请号：US10927572

申请日：2004-08-26

Applicant: Steven Verhaverbeke

Inventor： Steven Verhaverbeke

IPC: H01L21/4763 ,  G03C5/00

CPC classification number: H01L21/31133 ,  G03F7/427 ,  H01L21/76808

Abstract: A method of fabricating a semiconductor device. The method comprises creating a via in a dielectric layer that is formed on a substrate, filling the via, and optionally, the surface of the dielectric layer with a sacrificial material, patterning a first photoresist layer on the sacrificial material to define a trench for the semiconductor device, removing the first photoresist layer without affecting the sacrificial material, repatterning a second photoresist layer on the sacrificial material to define the trench for the semiconductor device, forming the trench, and removing the second photoresist layer and the sacrificial material completely after the trench is formed.

Abstract translation: 一种制造半导体器件的方法。 该方法包括在形成在衬底上的电介质层中形成通孔，用牺牲材料填充通孔和任选地介电层的表面，在牺牲材料上图案化第一光致抗蚀剂层以限定用于 半导体器件，去除第一光致抗蚀剂层而不影响牺牲材料，重新绘图牺牲材料上的第二光致抗蚀剂层以限定用于半导体器件的沟槽，形成沟槽，以及在沟槽之后完全去除第二光致抗蚀剂层和牺牲材料 形成了。

公开(公告)号：US20070138908A1

公开(公告)日：2007-06-21

申请号：US11703893

申请日：2007-02-07

Applicant: Roman Gouk ,  Steven Verhaverbeke

Inventor： Roman Gouk ,  Steven Verhaverbeke

IPC: H01L41/00

CPC classification number: H01L21/67057 ,  B06B1/0207 ,  B08B3/12 ,  H01L21/6704 ,  H01L21/67051 ,  H03H7/40

Abstract: A method and apparatus for matching impedance magnitude and impedance phase for an acoustic-wave transducer load and an RF power source. The acoustic-wave transducer load has a load impedance magnitude and phase. The RF power source has a source impedance magnitude and phase. In one embodiment of the invention, a transformer matches the source and load impedance magnitudes. A capacitor, connected in series with the transformer, matches the source impedance phase to the load impedance phase.

公开(公告)号：US07190103B2

公开(公告)日：2007-03-13

申请号：US11034475

申请日：2005-01-12

Applicant: Roman Gouk ,  Steven Verhaverbeke

Inventor： Roman Gouk ,  Steven Verhaverbeke

IPC: H01L41/09

CPC classification number: H01L21/67057 ,  B06B1/0207 ,  B08B3/12 ,  H01L21/6704 ,  H01L21/67051 ,  H03H7/40

Abstract: A method and apparatus for matching impedance magnitude and impedance phase for an acoustic-wave transducer load and an RF power source. The acoustic-wave transducer load has a load impedance magnitude and phase. The RF power source has a source impedance magnitude and phase. In one embodiment of the invention, a transformer matches the source and load impedance magnitudes. A capacitor, connected in series with the transformer, matches the source impedance phase to the load impedance phase.

Abstract translation: 一种用于匹配声波传感器负载和RF电源的阻抗幅度和阻抗相位的方法和装置。 声波传感器负载具有负载阻抗幅值和相位。 RF电源具有源阻抗幅值和相位。 在本发明的一个实施例中，变压器匹配源极和负载阻抗幅度。 与变压器串联连接的电容器将源阻抗相位与负载阻抗相位相匹配。

公开(公告)号：US20060270242A1

公开(公告)日：2006-11-30

申请号：US11497025

申请日：2006-07-31

Applicant: Steven Verhaverbeke ,  Kelly Truman

Inventor： Steven Verhaverbeke ,  Kelly Truman

IPC: H01L21/302 ,  B08B6/00 ,  C25F1/00 ,  H01L21/461

CPC classification number: H01L21/02052 ,  B08B3/08 ,  C11D1/29 ,  C11D1/72 ,  C11D3/044 ,  C11D3/32 ,  C11D3/33 ,  C11D3/3947 ,  C11D7/06 ,  C11D7/265 ,  C11D11/0047 ,  C23G5/00 ,  H01L21/67051 ,  Y10S261/07

Abstract: The present invention is a novel cleaning method and a solution for use in a single wafer cleaning process. According to the present invention the cleaning solution comprises ammonium hydroxide (NH4OH), hydrogen peroxide (H2O2), water (H2O) and a chelating agent. In an embodiment of the present invention the cleaning solution also contains a surfactant. And still yet another embodiment of the present invention the cleaning solution also comprises a dissolved gas such as H2. In a particular embodiment of the present invention, this solution is used by spraying or dispensing it on a spinning wafer.

公开(公告)号：US20060264050A1

公开(公告)日：2006-11-23

申请号：US11496887

申请日：2006-07-31

Applicant: Steven Verhaverbeke ,  J. Truman ,  Rick Endo ,  Alexander Ko

Inventor： Steven Verhaverbeke ,  J. Truman ,  Rick Endo ,  Alexander Ko

IPC: C23G1/00 ,  B08B3/00 ,  H01L21/302

CPC classification number: B01F15/0454 ,  Y10T137/87652

Abstract: A method of and apparatus for mixing chemicals in a single wafer process. According to the present invention a chemical is fed into a valve system having a tube of a known volume. The chemical is fed into the valve system to fill the tube with a chemical to generate a measured amount of the chemical. The measured amount of chemical is then used in a single wafer process.

公开(公告)号：US20060260661A1

公开(公告)日：2006-11-23

申请号：US11497410

申请日：2006-07-31

Applicant: Steven Verhaverbeke ,  J. Truman ,  Alexander Ko ,  Rick Endo

Inventor： Steven Verhaverbeke ,  J. Truman ,  Alexander Ko ,  Rick Endo

IPC: B08B3/00 ,  B08B3/12

CPC classification number: H01L21/67051 ,  B08B3/02 ,  B08B3/12 ,  B08B2203/0288 ,  H01L21/02041 ,  Y10S134/902

Abstract: An apparatus for wet processing individual wafers comprising; a means for holding the wafer; a means for providing acoustic energy to a non-device side of the wafer; and a means for flowing a fluid onto a device side of the wafer.