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    Ultra high throughput wafer vacuum processing system
    3.
    发明授权
    Ultra high throughput wafer vacuum processing system 失效
    超高产量晶圆真空处理系统

    公开(公告)号：US5855681A

    公开(公告)日：1999-01-05

    申请号：US751485

    申请日：1996-11-18

    申请人： Dan Maydan ,  Sasson Somekh ,  Ashok Sinha ,  Kevin Fairbairn ,  Christopher Lane ,  Kelly Colborne ,  Hari K. Ponnekanti ,  W. N.(Nick) Taylor

    发明人： Dan Maydan ,  Sasson Somekh ,  Ashok Sinha ,  Kevin Fairbairn ,  Christopher Lane ,  Kelly Colborne ,  Hari K. Ponnekanti ,  W. N.(Nick) Taylor

    IPC分类号： H01L21/00 ,  H01L21/205 ,  H01L21/677 ,  H01L21/687 ,  C23C16/00 ,  C23F1/02

    CPC分类号： H01L21/67167 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67742 ,  H01L21/68707 ,  H01L21/68785

    摘要： The present invention generally provides a cassette-to-cassette vacuum processing system which concurrently processes multiple wafers and combines the advantages of single wafer process chambers and multiple wafer handling for high quality wafer processing, high wafer throughput and reduced footprint. In accordance with one aspect of the invention, the system is preferably a staged vacuum system which generally includes a loadlock chamber for introducing wafers into the system and which also provides wafer cooling following processing, a transfer chamber for housing a wafer handler, and one or more processing chambers each having two or more processing regions which are isolatable from each other and preferably share a common gas supply and a common exhaust pump. The processing regions also preferably include separate gas distribution assemblies and RF power sources to provide a uniform plasma density over a wafer surface in each processing region. The processing chambers are configured to allow multiple, isolated processes to be performed concurrently in at least two processing regions so that at least two wafers can be processed simultaneously in a chamber with a high degree of process control provided by shared gas sources, shared exhaust systems, separate gas distribution assemblies, separate RF power sources, and separate temperature control systems.

    摘要翻译： 本发明通常提供一种盒式到盒式真空处理系统，其同时处理多个晶片，并且结合了单晶片处理室和多个晶片处理的优点，用于高质量晶片处理，高晶圆吞吐量和减小的占地面积。 根据本发明的一个方面，该系统优选地是分级真空系统，其通常包括用于将晶片引入系统中并且还提供后续处理的晶片冷却的负载锁定室，用于容纳晶片处理器的传送室，以及一个或 更多的处理室具有可彼此隔离的两个或更多个处理区域，并且优选地共享公共气体供应源和公共排气泵。 处理区域还优选地包括单独的气体分配组件和RF功率源，以在每个处理区域中在晶片表面上提供均匀的等离子体密度。 处理室被配置为允许在至少两个处理区域中同时执行多个隔离过程，使得可以在室内同时处理至少两个晶片，具有由共用气源提供的高程度的过程控制，共用排气系统 ，独立的气体分配组件，独立的射频电源和独立的温度控制系统。

    Method and apparatus for electro-chemical processing
    5.
    发明授权
    Method and apparatus for electro-chemical processing 失效
    电化学处理方法和装置

    公开(公告)号：US06896776B2

    公开(公告)日：2005-05-24

    申请号：US09739139

    申请日：2000-12-18

    申请人： Wei-Yung Hsu ,  Liang-Yuh Chen ,  Ratson Morad ,  Daniel A. Carl ,  Sasson Somekh

    发明人： Wei-Yung Hsu ,  Liang-Yuh Chen ,  Ratson Morad ,  Daniel A. Carl ,  Sasson Somekh

    IPC分类号： B24B37/00 ,  B24B37/04 ,  C25D5/00 ,  C25D5/22 ,  C25D7/12 ,  H01L21/288 ,  H01L21/304 ,  H01L21/321 ,  H01L21/768 ,  C25D1/00 ,  C25D17/00

    CPC分类号： C25D7/123 ,  C25D5/06 ,  C25D5/22 ,  C25D17/001 ,  C25D17/008 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/3212 ,  H01L21/7684 ,  H01L21/76877

    摘要： A method and apparatus is provided for depositing and planarizing a material layer on a substrate. In one embodiment, an apparatus is provided which includes a partial enclosure, a permeable disc, a diffuser plate and optionally an anode. A substrate carrier is positionable above the partial enclosure and is adapted to move a substrate into and out of contact or close proximity with the permeable disc. The partial enclosure and the substrate carrier are rotatable to provide relative motion between a substrate and the permeable disc. In another aspect, a method is provided in which a substrate is positioned in a partial enclosure having an electrolyte therein at a fist distance from a permeable disc. A current is optionally applied to the surface of the substrate and a first thickness is deposited on the substrate. Next, the substrate is positioned closer to the permeable disc and a second thickness is deposited on the substrate. During the deposition, the partial enclosure and the substrate are rotated relative one another.

    摘要翻译： 提供了一种用于沉积和平坦化衬底上的材料层的方法和装置。 在一个实施例中，提供了一种装置，其包括部分外壳，可渗透盘，漫射板和任选的阳极。 衬底载体可定位在部分外壳上方，并且适于将衬底移动到与可渗透盘接触或接近的位置。 部分外壳和基板载体可旋转以提供基板和可渗透盘之间的相对运动。 在另一方面，提供了一种方法，其中将基板定位在其中具有电解质的部分封闭件中，其中离开可渗透盘的第一距离。 任选地将电流施加到衬底的表面，并且在衬底上沉积第一厚度。 接下来，将基板定位成更靠近可渗透盘，并且在基板上沉积第二厚度。 在沉积期间，部分封闭物和基底相对彼此旋转。

    Web lift system for chemical mechanical planarization
    6.
    发明授权
    Web lift system for chemical mechanical planarization 失效
    用于化学机械平面化的Web提升系统

    公开(公告)号：US06561884B1

    公开(公告)日：2003-05-13

    申请号：US09651657

    申请日：2000-08-29

    申请人： John M. White ,  Phillip R. Sommer ,  Sasson Somekh

    发明人： John M. White ,  Phillip R. Sommer ,  Sasson Somekh

    IPC分类号： B24B700

    CPC分类号： B24B37/16 ,  B24B21/004 ,  B24B21/008 ,  B24B21/20

    摘要： Generally, a method and system for lifting a web of polishing material is provided. In one embodiment, the system includes a platen that has a first lift member disposed adjacent to a first side and a second lift member disposed adjacent to a second side. The platen is adapted to support the web of polishing media that is disposed between the first and the second lift members. A method includes supporting a web of polishing media on a platen between a first lift member and a second lift member and moving at least the first lift member or the second lift member to an extended position relative the platen that places the web in a spaced-apart relation with the platen.

    摘要翻译： 通常，提供了用于提升抛光材料的网的方法和系统。 在一个实施例中，系统包括具有邻近第一侧设置的第一提升构件和邻近第二侧设置的第二提升构件的压板。 压板适于支撑布置在第一和第二升降构件之间的抛光介质的腹板。 一种方法包括在第一提升构件和第二提升构件之间的台板上支撑抛光介质的腹板，并且将至少第一提升构件或第二提升构件移动到相对于台板的延伸位置， 与压板分开关系。

    Etch stop layer for dual damascene process
    8.
    发明授权
    Etch stop layer for dual damascene process 失效
    用于双镶嵌工艺的蚀刻停止层

    公开(公告)号：US06291334B1

    公开(公告)日：2001-09-18

    申请号：US08995029

    申请日：1997-12-19

    申请人： Sasson Somekh

    发明人： Sasson Somekh

    IPC分类号： H01L21708

    CPC分类号： H01L21/76835 ,  H01L21/7681 ,  H01L21/76829

    摘要： The present invention provides a carbon based etch stop, such as a diamond like amorphous carbon, having a low dielectric constant and a method of forming a dual damascene structure. The low k etch stop is preferably deposited between two dielectric layers and patterned to define the underlying interlevel contacts/vias. The second or upper dielectric layer is formed over the etch stop and patterned to define the intralevel interconnects. The entire dual damascene structure is then etched in a single selective etch process which first etches the patterned interconnects, then etches the contact/vias past the patterned etch stop. The etch stop has a low dielectric constant relative to a conventional SiN etch stop, which minimizes the capacitive coupling between adjacent interconnect lines. The dual damascene structure is then filled with a suitable conductive material such as aluminum or copper and planarized using chemical mechanical polishing.

    摘要翻译： 本发明提供具有低介电常数的碳基蚀刻停止物，例如类金刚石无定形碳，以及形成双镶嵌结构的方法。 低k蚀刻停止件优选沉积在两个电介质层之间并被图案化以限定下面的层间接触/通路。 第二或上电介质层形成在蚀刻停止点上并被图案化以限定内部互连。 然后在单个选择性蚀刻工艺中蚀刻整个双镶嵌结构，其首先蚀刻图案化的互连，然后蚀刻通过图案化蚀刻停止点的接触/通孔。 蚀刻停止件相对于传统的SiN蚀刻停止层具有低的介电常数，其使相邻互连线之间的电容耦合最小化。 然后用合适的导电材料如铝或铜填充双镶嵌结构，并使用化学机械抛光进行平面化。

    Magnetic field-enhanced plasma etch reactor
    10.
    发明授权
    Magnetic field-enhanced plasma etch reactor 失效
    磁场增强等离子体蚀刻反应器

    公开(公告)号：US5215619A

    公开(公告)日：1993-06-01

    申请号：US760848

    申请日：1991-09-17

    申请人： David Cheng ,  Dan Maydan ,  Sasson Somekh ,  Kenneth R. Stalder ,  Dana L. Andrews ,  Mei Chang ,  John M. White ,  Jerry Y. K. Wong ,  Vladimir J. Zeitlin ,  David N. Wang

    发明人： David Cheng ,  Dan Maydan ,  Sasson Somekh ,  Kenneth R. Stalder ,  Dana L. Andrews ,  Mei Chang ,  John M. White ,  Jerry Y. K. Wong ,  Vladimir J. Zeitlin ,  David N. Wang

    IPC分类号： H01J37/32 ,  H01L21/00

    CPC分类号： H01L21/67069 ,  H01J37/32477 ,  H01J37/32623 ,  H01J37/32743 ,  H01J37/32862

    摘要： A magnetic field enhanced single wafer plasma etch reactor is disclosed. The features of the reactor include an electrically-controlled stepped magnetic field for providing high rate uniform etching at high pressures; temperature controlled reactor surfaces including heated anode surfaces (walls and gas manifold) and a cooled wafer supporting cathode; and a unitary wafer exchange mechanism comprising wafer lift pins which extend through the pedestal and a wafer clamp ring. The lift pins and clamp ring are moved vertically by a one-axis lift mechanism to accept the wafer from a cooperating external robot blade, clamp the wafer to the pedestal and return the wafer to the blade. The electrode cooling combines water cooling for the body of the electrode and a thermal conductivity-enhancing gas parallel-bowed interface between the wafer and electrode for keeping the wafer surface cooled despite the high power densities applied to the electrode. A gas feed-through device applies the cooling gas to the RF powered electrode without breakdown of the gas. Protective coatings/layers of materials such as quartz are provided for surfaces such as the clamp ring and gas manifold. The combination of these features provides a wide pressure regime, high etch rate, high throughput single wafer etcher which provides uniformity, directionality and selectivity at high gas pressures, operates cleanly and incorporates in-situ self-cleaning capability.

    摘要翻译： 公开了一种磁场增强型单晶片等离子体蚀刻反应器。 反应器的特征包括用于在高压下提供高速均匀蚀刻的电控步进磁场; 温度控制的反应器表面包括加热的阳极表面（壁和气体歧管）和冷却的晶片支撑阴极; 以及包括延伸穿过基座的晶片提升销和晶片夹紧环的整体晶片交换机构。 提升销和夹紧环通过单轴提升机构垂直移动，以从协作的外部机器人刀片接收晶片，将晶片夹紧到基座并将晶片返回到刀片。 电极冷却结合了用于电极体的水冷却和晶片和电极之间的热导率增强气体平行弓形界面，用于保持晶片表面冷却，尽管施加到电极的高功率密度。 气体馈通装置将冷却气体施加到RF供电的电极，而不会破坏气体。 为诸如夹紧环和气体歧管的表面提供保护涂层/诸如石英的材料层。 这些特征的组合提供了广泛的压力方案，高蚀刻速率，高通量单晶硅蚀刻器，其在高气体压力下提供均匀性，方向性和选择性，干净地操作并且并入现场自清洁能力。