公开(公告)号：US5578901A

公开(公告)日：1996-11-26

申请号：US387539

申请日：1995-02-13

Applicant: Graciela B. Blanchet-Fincher ,  Don M. Coates ,  David J. Devlin ,  David F. Eaton ,  Aris K. Silzars ,  Steven M. Valone

Inventor： Graciela B. Blanchet-Fincher ,  Don M. Coates ,  David J. Devlin ,  David F. Eaton ,  Aris K. Silzars ,  Steven M. Valone

IPC: H01J31/12 ,  H01J1/304 ,  H01J29/04 ,  H01J1/30 ,  H01J3/02

CPC classification number: H01J1/304 ,  H01J2201/30457

Abstract: A field emission electron emitter comprising an electrode formed of at least one diamond, diamond-like carbon or glassy carbon composite fiber, said composite fiber having a non-diamond core and a diamond, diamond-like carbon or glassy carbon coating on said non-diamond core, and electronic devices employing such a field emission electron emitter.

Abstract translation: 一种场发射电子发射器，包括由至少一种金刚石，类金刚石碳或玻璃碳复合纤维形成的电极，所述复合纤维在所述非金刚石芯上具有金刚石，类金刚石碳或玻璃碳涂层， 金刚石芯和采用这种场发射电子发射体的电子器件。

公开(公告)号：US5551903A

公开(公告)日：1996-09-03

申请号：US326302

申请日：1994-10-19

Applicant: Nalin Kumar ,  Chenggang Xie

Inventor： Nalin Kumar ,  Chenggang Xie

IPC: G09G3/22 ,  H01J1/304 ,  H01J1/316 ,  H01J9/02 ,  H01J29/08 ,  H01J31/12 ,  H01J61/067 ,  H01J63/06 ,  H01J1/30

CPC classification number: H01J1/316 ,  G09G3/22 ,  H01J1/304 ,  H01J1/3042 ,  H01J29/085 ,  H01J31/127 ,  H01J61/0677 ,  H01J63/06 ,  H01J9/027 ,  H01J2201/304 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2201/319 ,  H01J2329/8625 ,  H01J2329/864 ,  Y10S977/891

Abstract: A field emission cathode is provided which includes a substrate and a conductive layer disposed adjacent the substrate. An electrically resistive pillar is disposed adjacent the conductive layer, the resistive pillar having a substantially flat surface spaced from and substantially parallel to the substrate. A layer of diamond is disposed adjacent the flat surface of the resistive pillar.

Abstract translation: 提供场发射阴极，其包括衬底和邻近衬底设置的导电层。 电阻柱设置在导电层附近，电阻柱具有与衬底间隔开并基本上平行于衬底的基本平坦的表面。 在电阻柱的平坦表面附近设置一层金刚石。

公开(公告)号：US5505649A

公开(公告)日：1996-04-09

申请号：US366086

申请日：1994-12-29

Applicant: Nam S. Park

Inventor： Nam S. Park

IPC: H01J31/10 ,  G09F9/30 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12 ,  H01L21/205 ,  H01J1/30

CPC classification number: H01J9/025 ,  H01J2201/30457 ,  H01J2329/00

Abstract: A field emission display device having thin film diamond cathodes and a method for producing the display device are disclosed. The field emission display device has an insulating layer having circular pattern apertures, and the field emission diamond cathodes formed in the apertures of the insulating layer respectively. The display device is formed by forming an insulating layer on a cathode layer, etching the insulating layer using a photoresist so as to form the apertures in the insulating layer, removing the photoresist from the insulating layer and forming a separation layer on the insulating layer, forming a plurality of thin-film diamond cathodes in the apertures and, at the same time, forming a diamond layer on the separation layer, and removing the separation layer together with the diamond layer from the insulating layer through a lift off process.

Abstract translation: 公开了一种具有薄膜金刚石阴极的场致发射显示装置及其制造方法。 场发射显示装置具有具有圆形图案孔的绝缘层，并且分别形成在绝缘层的孔中的场发射金刚石阴极。 显示装置通过在阴极层上形成绝缘层，使用光致抗蚀剂蚀刻绝缘层以在绝缘层中形成孔，从绝缘层除去光致抗蚀剂并在绝缘层上形成分离层， 在孔中形成多个薄膜金刚石阴极，并且同时在分离层上形成金刚石层，以及通过剥离工艺将金刚石层与绝缘层一起从金刚石层去除。

公开(公告)号：US5462467A

公开(公告)日：1995-10-31

申请号：US118490

申请日：1993-09-08

Applicant: John M. Macaulay ,  Peter C. Searson ,  Robert M. Duboc, Jr. ,  Christopher J. Spindt

Inventor： John M. Macaulay ,  Peter C. Searson ,  Robert M. Duboc, Jr. ,  Christopher J. Spindt

IPC: H01J1/304 ,  H01J3/02 ,  H01J9/02

CPC classification number: B82Y10/00 ,  H01J1/3042 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2201/319 ,  Y10T428/2973 ,  Y10T428/298

Abstract: A field-emission structure suitable for large-area flat-panel televisions centers around an insulating porous layer (24A) that overlies a lower conductive region (22) situated over insulating material of a supporting substrate (20). Electron-emissive filaments (30) occupy pores (28) extending through the porous layer. A conductive gate layer (34A) through which openings (36) extend at locations centered on the filaments typically overlies the porous layer. Cavities (38) are usually provided in the porous layer along its upper surface at locations likewise centered on the filaments.In fabricating the structure, the pores are preferably formed by etching charged-particle tracks. Electrochemical deposition is employed to selectively create the filaments in the pores. Self-alignment of the gate openings to the filaments is achieved with charged-particle track etching and/or further electrochemical processing.

Abstract translation: 适用于大面积平板电视的场发射结构围绕位于位于支撑衬底（20）的绝缘材料之上的下导电区域（22）的绝缘多孔层（24A）周围。 电子发射丝（30）占据延伸穿过多孔层的孔（28）。 开口（36）通过所述导电栅极层（34A）延伸穿过长丝的位置，通常覆盖在多孔层上。 通常在多孔层中沿着其上表面在同样位于细丝上的位置处设置空腔（38）。 在制造结构时，优选通过蚀刻带电粒子迹线形成孔。 使用电化学沉积来选择性地在孔中产生细丝。 通过带电粒子轨迹蚀刻和/或进一步的电化学处理实现了栅极开口对长丝的自对准。

公开(公告)号：US5399238A

公开(公告)日：1995-03-21

申请号：US232790

申请日：1994-04-22

Applicant: Nalin Kumar

Inventor： Nalin Kumar

IPC: H01J9/02 ,  H05K3/00 ,  H01J9/00

CPC classification number: H01J9/025 ,  H01J2201/30407 ,  H01J2201/30457 ,  H05K2201/2081 ,  H05K2203/0554 ,  H05K2203/107 ,  H05K3/0023 ,  H05K3/0041

Abstract: A method of making sub-micron low work function field emission tips without using photolithography. The method includes physical vapor deposition of randomly located discrete nuclei to form a discontinuous etch mask. In one embodiment an etch is applied to low work function material covered by randomly located nuclei to form emission tips in the low work function material. In another embodiment an etch is applied to base material covered by randomly located nuclei to form tips in the base material which are then coated with low work function material to form emission tips. Diamond is the preferred low work function material.

Abstract translation: 一种制造亚微米低功函数场发射尖端而不使用光刻的方法。 该方法包括随机定位的离散核的物理气相沉积以形成不连续的蚀刻掩模。 在一个实施例中，蚀刻被施加到由随机定位的核覆盖的低功函数材料，以在低功函数材料中形成发射尖端。 在另一个实施例中，蚀刻被施加到由随机定位的核覆盖的基材上，以在基材中形成尖端，然后用低功函数材料涂覆以形成发射尖端。 钻石是首选的低功能材料。

公开(公告)号：US5345141A

公开(公告)日：1994-09-06

申请号：US45407

申请日：1993-03-29

Applicant: Curtis D. Moyer ,  John Song ,  James E. Jaskie

Inventor： Curtis D. Moyer ,  John Song ,  James E. Jaskie

IPC: H01J9/02 ,  H01J1/304 ,  H01J9/14 ,  H01J9/22 ,  H01J29/04 ,  H01J29/18 ,  H01J31/12 ,  H01J1/62

CPC classification number: H01J1/3042 ,  H01J31/127 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2201/319

Abstract: A single substrate, vacuum fluorescent display including a first layer of electrically conductive material positioned on a supporting substrate and a light emitting layer including phosphor positioned on the first layer. A second layer of electrically conductive material is supported on the substrate and electrically insulated from the first layer. An electron emitting layer of low work function material is positioned on the second layer and further positioned so that emitted electrons strike the light emitting layer. Since both the electron emitting and the light emitting layers are supported on the substrate, an encapsulating window is simple and easy to construct. Integrated drivers are optionally formed in the supporting substrate.

Abstract translation: 单个基板，真空荧光显示器，其包括位于支撑基板上的第一导电材料层和包含位于第一层上的荧光体的发光层。 第二层导电材料被支撑在基底上并与第一层电绝缘。 低功函数材料的电子发射层位于第二层上，并进一步定位成使得发射的电子撞击发光层。 由于电子发射层和发光层都被支撑在基板上，所以封装窗口简单易于构造。 集成驱动器可选地形成在支撑基板中。

公开(公告)号：US5290732A

公开(公告)日：1994-03-01

申请号：US896126

申请日：1992-06-09

Applicant: Nalin Kumar ,  Chenggang Xie ,  Rama R. Goruganthu ,  Mohammed K. Ghazi

Inventor： Nalin Kumar ,  Chenggang Xie ,  Rama R. Goruganthu ,  Mohammed K. Ghazi

IPC: H01L21/60 ,  H01L23/485 ,  H05K3/00 ,  H01L21/285

CPC classification number: H01L24/13 ,  H01L24/11 ,  H01J2201/30457 ,  H01L2224/11822 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13144 ,  H01L2224/13155 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01049 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H05K2201/2081 ,  H05K2203/0554 ,  H05K2203/107 ,  H05K3/0023 ,  H05K3/0041

Abstract: Ionized metal cluster beam deposition of metal bumps on substrates such as multi-chip modules and integrated circuit chips is enhanced. The present invention discloses wet etching techniques for removing unwanted metal deposited on the substrate around bumps, and multiple sources for depositing alloyed (tin-lead) bumps with constant composition.

Abstract translation: 提高了诸如多芯片模块和集成电路芯片的衬底上的金属凸块的电离金属簇束沉积。 本发明公开了用于去除在凸起周围沉积在衬底上的不需要的金属的湿蚀刻技术，以及用于沉积具有恒定组成的合金（锡铅）凸块的多个源。

公开(公告)号：US5141460A

公开(公告)日：1992-08-25

申请号：US747563

申请日：1991-08-20

Applicant: James E. Jaskie ,  Robert C. Kane

Inventor： James E. Jaskie ,  Robert C. Kane

IPC: G01Q70/08 ,  G01Q70/10 ,  H01J1/304 ,  H01J9/02

CPC classification number: B82Y15/00 ,  H01J1/3042 ,  H01J9/025 ,  H01J2201/30457

Abstract: A field emission electron device employing an electron emitter comprised of a coating of diamond material disposed on a surface of a selectively formed conductive/semiconductive electrode and a method of forming the device including a step wherein carbon ions are implanted at a surface of a conductive/semiconductive electrode to function as nucleation sites for the diamond formation.

公开(公告)号：US3998678A

公开(公告)日：1976-12-21

申请号：US453031

申请日：1974-03-20

Applicant: Shigeo Fukase ,  Ushio Kawabe

Inventor： Shigeo Fukase ,  Ushio Kawabe

IPC: H01J9/02 ,  C23F1/04 ,  A47B88/00

CPC classification number: H01J9/025 ,  H01J2201/30457

Abstract: A method of manufacturing a thin-film field-emission electron source which is of a sandwich structure of a substrate - metallic film-insulating film - metallic film and which has at least one minute cavity and a field-emitter of, for example, a conical shape within the cavity, comprises the steps of (i) forming on a substrate a first layer of metallic film pattern for current supply, (ii) depositing a second layer film made of an electron emissive material onto the entire area of the substrate provided with the first layer, and thereafter subjecting the second layer film to a mesa etch by a photoetching process, to form a conical emitter on the first layer film, (iii) forming a third layer made of an insulating material, the third layer having a height substantially equal to the level of a tip portion of the emitter, (iv) forming a fourth layer of metallic film pattern as an accelerating electrode, and (v) etching the third layer, so as to expose the extremity of the emitter.According to the manufacturing method, a thin-film field-emission electron source can be readily produced merely by the combination between the standard evaporation techniques and etching techniques.

Abstract translation: 一种制造薄膜场致发射电子源的方法，该薄膜场致发射电子源是基片 - 金属膜绝缘膜 - 金属膜的夹层结构，并且具有至少一分钟腔体和场致发射体，例如， 包括以下步骤：（i）在基板上形成用于电流供应的第一金属膜图案层，（ii）将由电子发射材料制成的第二层膜沉积到所提供的基板的整个区域上 并且然后通过光刻工艺对第二层膜进行台面蚀刻，以在第一层膜上形成锥形发射体，（iii）形成由绝缘材料制成的第三层，第三层具有 高度基本上等于发射体的尖端部分的高度，（iv）形成作为加速电极的金属膜图案的第四层，（v）蚀刻第三层，以暴露出发射极的末端。

公开(公告)号：USB453031I5

公开(公告)日：1976-03-16

申请号：US45303174

申请日：1974-03-20

IPC: H01J9/02

CPC classification number: H01J9/025 ,  H01J2201/30457