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公开(公告)号：US11165981B2
公开(公告)日：2021-11-02
申请号：US16918970
申请日：2020-07-01
Applicant: IMEC vzw
Inventor： Linkun Wu
Abstract: A circuit for correlated double sampling is disclosed. In one aspect, the circuit comprises a reset switch connected with an input node, and with a first node of a first capacitor; a sampling switch connected with the input node, and with a first node of a second capacitor; a second node of the first/second capacitor is adapted to be connected with a first/second reference node, of which at least one using a reference switch; a first switch connected between the second node of the first capacitor and the first node of the second capacitor; a second switch connected between the first node of the first capacitor and the second node of the second capacitor.
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公开(公告)号：US11164981B2
公开(公告)日：2021-11-02
申请号：US16786554
申请日：2020-02-10
Applicant: IMEC VZW , Katholieke Universiteit Leuven, KU LEUVEN R&D
Inventor： Jinyoun Cho , Maria Jesus Recaman Payo , Maarten Debucquoy , Jef Poortmans
IPC: H01L31/0224 , H01L31/028 , H01L31/18
Abstract: A method includes depositing a first layer including amorphous silicon on a surface of a substrate; depositing a second layer including metal on the first layer; and performing an annealing process at a temperature within a range of 70° C. to 200° C., thereby inducing a silicidation reaction between the first layer and the second layer and forming a third layer comprising a metal silicide in electrical contact with the substrate, resulting in a remaining part of the first layer being between the substrate and the third layer.
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公开(公告)号：US11163229B2
公开(公告)日：2021-11-02
申请号：US16674582
申请日：2019-11-05
Applicant: IMEC VZW , Katholieke Universiteit Leuven, KU LEUVEN R&D
Inventor： Marina Mariano Juste , Marina Timmermans , Ivan Pollentier , Cedric Huyghebaert , Emily Gallagher
Abstract: A method for protecting a photomask comprises: (i) providing the photomask, (ii) providing a border, (iii) depositing at least two electrical contacts on the border, (iv) mounting a film comprising carbon nanotubes on the border such that the film comprises a free-standing part, wherein after the mounting and depositing steps, the electrical contacts are in contact with the film, (v) inducing a current through the free-standing part of the film by biasing at least one pair of the electrical contacts, and (vi) mounting the border on at least one side of the photomask with the free-standing part of the film above the photomask.
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公开(公告)号：US20210336002A1
公开(公告)日：2021-10-28
申请号：US17240694
申请日：2021-04-26
Applicant: IMEC VZW
Inventor： Roger Loo , Geert Eneman , Clement Porret
IPC: H01L29/06 , H01L29/167 , H01L29/78
Abstract: A semiconductor structure including a semiconductor substrate having a top surface, one or more group IV semiconductor monocrystalline nanostructures, each having a first and a second extremity defining an axis parallel to the top surface of the semiconductor substrate and separated therefrom by a non-zero distance, each nanostructure having a source structure epitaxially grown on the first extremity and a drain structure epitaxially grown on the second extremity. The epitaxial source and drain structures are made of a group IV semiconductor doped with one or more of Sb and Bi, and optionally one or more of As and P, thereby creating tensile strain in the group IV semiconductor monocrystalline nanostructure.
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公开(公告)号：US20210335664A1
公开(公告)日：2021-10-28
申请号：US17237699
申请日：2021-04-22
Applicant: IMEC VZW
Inventor： Victor M. Blanco , Frederic Lazzarino
IPC: H01L21/768 , H01L21/48 , H01L21/033
Abstract: A method that provides patterning of an underlying layer to form a first set of trenches and a second set of trenches in the underlying layer is based on a combination of two litho-etch (LE) patterning processes supplemented with a spacer-assisted (SA) technique. The method uses one or more first upper blocks formed by a tone-inversion approach, an upper memorization layer allowing first memorizing upper trenches, and then second upper blocks, and a lower memorization layer allowing first memorizing first lower trenches and one or more first lower blocks, and then second lower trenches and one or more second lower blocks.
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Patent Agency Ranking
公开(公告)号：US11156776B2
公开(公告)日：2021-10-26
申请号：US16938188
申请日：2020-07-24
Applicant: IMEC VZW
Inventor： Jan Genoe , Robert Gehlhaar
IPC: G02B6/26 , G02B6/122 , G02B6/12 , H01L31/0232
Abstract: A semiconductor detector (100) for electromagnetic radiation within a wavelength range is disclosed, comprising a first waveguide portion (110), a funnel element (130) configured to funnel incident electromagnetic radiation into a first end (112) of the first waveguide portion, and a second waveguide portion (120) extending in parallel with the first waveguide portion. The second waveguide portion is coupled to the first waveguide portion and configured to out-couple electromagnetic radiation from the first waveguide portion, within a sub-range of the wavelength range. Further, a photodetector (140) including a photoactive layer (144) is arranged at a second end (114) of the first waveguide portion and at an end (124) of the second waveguide portion, and configured to separately detect electromagnetic radiation transmitted through and exiting the first waveguide portion and the second waveguide portion.
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公开(公告)号：US20210320001A1
公开(公告)日：2021-10-14
申请号：US17225644
申请日：2021-04-08
Applicant: IMEC VZW
Inventor： Daire Cott , Elie Schapmans
IPC: H01L21/02
Abstract: A method for growing a dielectric material on a surface comprises introducing the surface into a first process chamber; in the first process chamber, exposing the surface to a first precursor, thereby adsorbing the first precursor to the surface; without purging the first process chamber, introducing the surface into a second process chamber; and in the second process chamber, exposing the surface to a second precursor thereby reacting the adsorbed first precursor with the second precursor to grow the dielectric material on the surface.
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公开(公告)号：US20210305412A1
公开(公告)日：2021-09-30
申请号：US17210110
申请日：2021-03-23
Applicant: IMEC VZW
Inventor： Boon Teik Chan , Changyong Xiao , Jie Chen
IPC: H01L29/66 , H01L29/423 , H01L29/40 , H01L21/762 , H01L29/06
Abstract: A method for processing a FinFET device, such as a Forksheet device, comprises providing a substrate, and forming a trench in the substrate. The trench extends along a first direction. The method further comprises filling the trench with a filling material, and partially recessing the substrate to form a fin structure. The fin structure comprises the filled trench, a first section of the substrate at a first side of the filled trench and a second section of the substrate at a second side of the filled trench, and forming a gate structure on and around the fin structure.
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公开(公告)号：US11125805B2
公开(公告)日：2021-09-21
申请号：US16518730
申请日：2019-07-22
Applicant: IMEC VZW
Inventor： Kristof Paredis , Umberto Celano , Wilfried Vandervorst
Abstract: A device is provided for electrically measuring surface characteristics of a sample. The device comprises at least one group of three electrodes: a first and second electrode spaced apart from each other and configured to be placed onto the surface of the sample, and a third electrode between the first two but isolated from these two electrodes by a one or more first insulators, wherein a second insulator further isolates the central electrode from the sample when the device is placed thereon. The three electrodes and the insulators are attached to a single or to multiple holders with conductors incorporated therein for allowing the coupling of the electrodes to power sources or measurement tools. The placement of the device onto a semiconductor sample creates a transistor with the sample surface acting as the channel. The device thereby allows the determination of the transistor characteristics of the sample in a straightforward way.
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公开(公告)号：US11110455B2
公开(公告)日：2021-09-07
申请号：US16410622
申请日：2019-05-13
Applicant: IMEC VZW , Katholieke Universiteit Leuven, KU LEUVEN R&D
Inventor： Ujjal Barman , Benjamin Jones , Paolo Fiorini , David Mikaelian
Abstract: A microfluidic device for electrically activating a passive capillary stop valve, an apparatus and method are provided. The microfluidic device includes a first channel for containing a first fluid, and an output channel, wherein the first channel comprises a first interface with the output channel, and the first interface comprises a capillary stop valve characterised in that the microfluidic device also comprises a second channel for containing a second fluid, wherein the second channel comprises a second interface with the output channel, and the first channel and the second channel are electrically isolated from each other, and the first interface and the second interface are arranged relative to each other thereby being configured to activate fluid flow from the first channel into the output channel when a first fluid and a second fluid are present, and an electrical potential difference is applied between the first fluid and the second fluid.
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