公开(公告)号：US20060086153A1

公开(公告)日：2006-04-27

申请号：US11247275

申请日：2005-10-12

申请人： Dong Kim ,  Young Chang

发明人： Dong Kim ,  Young Chang

IPC分类号： D06F39/14

CPC分类号： D06F39/14

摘要： A drum type washing machine having a vertically openable door includes a cabinet having an opening formed at a front wall of the cabinet to allow laundry to be put into or removed from the opening, a door provided at the front wall of the cabinet to open or close the opening, and a link opening/closing mechanism having links connected between the cabinet and the door to allow the door to be opened when the door is moved downwardly, and to be closed when the door is moved upwardly, such that an outer surface of the door faces upwardly when the door is opened. The door can be utilized as a laundry holder when the door is open, and even when the drum type washing machine is located in a narrow space, the door can be easily opened or closed while allowing the laundry to be conveniently put into or taken out of the washing machine.

摘要翻译： 具有可垂直打开的门的滚筒式洗衣机包括：机壳，其具有形成在所述机壳的前壁处的开口，以允许衣物被放入或从所述开口移除;门设置在所述机壳的前壁处以打开或 关闭开口，以及具有连接在机柜和门之间的连杆的连杆打开/关闭机构，以允许门在门向下移动时打开门，并且当门向上移动时被关闭，使得外表面 当门打开时门的面向上。 当门打开时，门可以用作洗衣架，即使当滚筒式洗衣机位于狭窄的空间中时，门也可以容易地打开或关闭，同时允许衣物方便地放入或取出 的洗衣机。

公开(公告)号：US20060079073A1

公开(公告)日：2006-04-13

申请号：US11235278

申请日：2005-09-27

申请人： Sun Kim ,  In Kim ,  Hun Hahm ,  Soo Lee ,  Dong Kim ,  Je Kim

发明人： Sun Kim ,  In Kim ,  Hun Hahm ,  Soo Lee ,  Dong Kim ,  Je Kim

IPC分类号： H01L21/20

CPC分类号： C30B29/406 ,  C30B25/02 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/0262 ,  Y10S438/967

摘要： Disclosed is a method of fabricating nitride semiconductors in a MOCVD reactor. GaN is first deposited on an inner wall of the MOCVD reactor, and a sapphire substrate is loaded into the MOCVD reactor. The sapphire substrate is heated and etching gas is injected into the MOCVD reactor. NH3 gas is injected into the MOCVD reactor to nitrify the surface of the sapphire substrate. A nitride semiconductor layer is grown on the nitrified sapphire substrate. By surface-reforming the sapphire substrate and then growing the nitride semiconductor layer on the surface-reformed sapphire substrate via MOCVD without formation of a low temperature buffer layer, an excellent nitride semiconductor structure can be realized. In this circumstance, the nitride semiconductor layer for example of GaN can be grown effectively on the surface-treated sapphire substrate because GaN deposition occurs on the sapphire substrate while it is etched.

摘要翻译： 公开了一种在MOCVD反应器中制造氮化物半导体的方法。 首先将GaN沉积在MOCVD反应器的内壁上，并将蓝宝石衬底装载到MOCVD反应器中。 将蓝宝石衬底加热并将蚀刻气体注入到MOCVD反应器中。 将NH 3气体注入到MOCVD反应器中以使蓝宝石衬底的表面硝化。 在氮化蓝宝石衬底上生长氮化物半导体层。 通过表面改性蓝宝石衬底，然后通过MOCVD在表面改性的蓝宝石衬底上生长氮化物半导体层，而不形成低温缓冲层，可以实现优异的氮化物半导体结构。 在这种情况下，可以在表面处理的蓝宝石衬底上有效地生长例如GaN的氮化物半导体层，因为在蚀刻时在蓝宝石衬底上发生GaN沉积。

公开(公告)号：US20060060880A1

公开(公告)日：2006-03-23

申请号：US11053906

申请日：2005-02-10

申请人： Kyu Lee ,  Hyun Kim ,  Je Kim ,  Dong Kim

发明人： Kyu Lee ,  Hyun Kim ,  Je Kim ,  Dong Kim

IPC分类号： H01L29/22

CPC分类号： H01L27/15 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A nitride semiconductor light emitting device including a light emitting diode and a diode formed on a single substrate, in which the light emitting diode and the diode use a common electrode. According to the present invention, an active layer and a p-type nitride semiconductor layer are each divided into a first region and a second region by an insulative isolation layer, and an ohmic contact layer is formed on the p-type nitride semiconductor layer contained in the first region. A p-type electrode is formed on the ohmic contact layer and is extended to the p-type nitride semiconductor layer contained in the second region. An n-type electrode is formed on the p-type nitride semiconductor layer contained in the second region, passes through the p-type nitride semiconductor layer and the active layer contained in the second region, and is connected to the first n-type nitride semiconductor layer.

摘要翻译： 一种氮化物半导体发光器件，包括在单个衬底上形成的发光二极管和二极管，其中发光二极管和二极管使用公共电极。 根据本发明，通过绝缘隔离层将有源层和p型氮化物半导体层分别分成第一区域和第二区域，在包含的p型氮化物半导体层上形成欧姆接触层 在第一个地区。 在欧姆接触层上形成p型电极，并延伸到包含在第二区域中的p型氮化物半导体层。 在包含在第二区域的p型氮化物半导体层上形成n型电极，穿过p型氮化物半导体层和包含在第二区域中的有源层，并连接到第一n型氮化物 半导体层。

公开(公告)号：US20060042022A1

公开(公告)日：2006-03-02

申请号：US11174574

申请日：2005-07-06

申请人： Dong Kim ,  Young Kim ,  Byoung Min

发明人： Dong Kim ,  Young Kim ,  Byoung Min

IPC分类号： D06F37/30

CPC分类号： D06F37/40 ,  D06F37/304 ,  H02K5/163 ,  H02K16/02

摘要： A washing machine includes a washing shaft that extends through an outer tub, and is coupled to an inner tub and a double rotor motor coupled to the washing shaft. The double rotor motor has two rotors drivable independently from each other and wound independently from each other.

摘要翻译： 洗衣机包括洗涤轴，其延伸穿过外桶，并且联接到内桶和联接到洗涤轴的双转子马达。 双转子电动机具有彼此独立地驱动并彼此独立地缠绕的两个转子。

公开(公告)号：US20050286406A1

公开(公告)日：2005-12-29

申请号：US11107969

申请日：2005-04-18

申请人： Won Jeon ,  Jeong Seo ,  Jung Wee ,  Dong Kim ,  Youn Lee

发明人： Won Jeon ,  Jeong Seo ,  Jung Wee ,  Dong Kim ,  Youn Lee

IPC分类号： H04B7/00 ,  H04J11/00 ,  H04L1/20

CPC分类号： H04L1/20 ,  H04L1/208 ,  H04L25/0228 ,  H04L25/0236 ,  H04L25/025 ,  H04L27/2647

摘要： Disclosed herein is a hybrid channel estimation method and system for an Orthogonal Frequency Division Multiplexing (OFDM) wireless communication system. The hybrid channel estimation method includes the steps of acquiring a first channel coefficient using decision-directed channel estimation; acquiring a second channel coefficient using pilot-symbol-aided channel estimation; and calculating the final channel coefficient of a received signal by multiplying the first and second coefficients by first and second multiplication coefficients, respectively, and adding the multiplication results. The step of acquiring the first channel coefficient using the decision-directed channel estimation includes the steps of acquiring an initial channel coefficient by processing a long training symbol using a Least Square (LS) method; generating data by equalizing, demodulating and modulating a fast Fourier transformed new symbol using a previously estimated channel coefficient; and acquiring a new channel coefficient by dividing the new symbol by the data.

摘要翻译： 本文公开了一种用于正交频分复用（OFDM）无线通信系统的混合信道估计方法和系统。 混合信道估计方法包括以下步骤：使用决策信道估计来获取第一信道系数; 使用导频符号辅助信道估计获取第二信道系数; 以及分别通过将第一和第二系数乘以第一和第二乘法系数来计算接收信号的最终信道系数，并且相加乘法结果。 使用决策信道估计获取第一信道系数的步骤包括以下步骤：通过使用最小二乘法（LS）方法处理长训练符号来获取初始信道系数; 通过使用先前估计的信道系数均衡，解调和调制快速傅里叶变换的新符号来产生数据; 并通过将新符号除以数据来获取新的信道系数。

公开(公告)号：US20050266628A1

公开(公告)日：2005-12-01

申请号：US11193150

申请日：2005-07-29

申请人： Daniel Wang ,  Chunchieh Huang ,  Dong Kim

发明人： Daniel Wang ,  Chunchieh Huang ,  Dong Kim

IPC分类号： H01L21/762 ,  H01L21/8234 ,  H01L21/8247 ,  H01L27/105 ,  H01L21/336

CPC分类号： H01L27/11526 ,  H01L21/76237 ,  H01L21/823481 ,  H01L27/105 ,  H01L27/11539 ,  H01L27/11546

摘要： Substrate isolation trench (224) are formed in a semiconductor substrate (120). Dopant (e.g. boron) is implanted into the trench sidewalls by ion implantation to suppress the current leakage along the sidewalls. During the ion implantation, the transistor gate dielectric (520) faces the ion stream, but damage to the gate dielectric is annealed in subsequent thermal steps. In some embodiments, the dopant implantation is an angled implant. The implant is performed from the opposite sides of the wafer, and thus from the opposite sides of each active area. Each active area includes a region implanted from one side and a region implanted from the opposite side. The two regions overlap to facilitate threshold voltage adjustment.

公开(公告)号：US20050262868A1

公开(公告)日：2005-12-01

申请号：US11128228

申请日：2005-05-13

申请人： Gi Jeong ,  Dong Kim

发明人： Gi Jeong ,  Dong Kim

IPC分类号： E05F1/10 ,  E05F3/00 ,  F25D17/04 ,  F25D23/02

CPC分类号： E05F1/1091 ,  E05Y2900/31 ,  F25D23/028 ,  F25D2400/04

摘要： An automatic door opening and closing apparatus and a refrigerator having the same. The refrigerator includes a cabinet and a refrigerator door hinged to an open side of the cabinet. The opening and closing apparatus comprises a first rotating shaft to rotatably connect the refrigerator door to the cabinet, a damper unit to allow the door to be automatically opened or closed, and a second rotating shaft to rotatably connect the damper unit to the door to allow the door to be automatically opened or closed by the damper unit depending on an opening degree of the door. The damper unit includes a damping member and a link member. The link member has a first end coupled to the damping member, and a second end coupled to the second rotating shaft. The damper unit and other parts of the automatic door opening and closing apparatus show simplified and strong structures, thereby achieving effective and smooth operation of the refrigerator door with a low effort. By allowing the refrigerator door to be automatically opened or closed when the opening angle of the refrigerator is in a predetermined range, the automatic door opening and closing apparatus of the present invention can provide satisfactory use of products.

摘要翻译： 一种自动开门装置和具有该自动开门装置的冰箱。 冰箱包括一个橱柜和一个铰链到机柜开口侧的冰箱门。 开闭装置包括：第一旋转轴，用于将冰箱门可旋转地连接到机壳;阻尼单元，其允许门被自动地打开或关闭;以及第二旋转轴，用于将风门单元可旋转地连接到门以允许 根据门的开度，门被阻尼器单元自动打开或关闭。 阻尼器单元包括阻尼构件和连杆构件。 连杆构件具有联接到阻尼构件的第一端和联接到第二旋转轴的第二端。 自动门打开和关闭装置的阻尼器单元和其他部件显示出简化和强大的结构，从而以低的努力实现冰箱门的有效和平稳的操作。 当冰箱的打开角度在预定范围内时，通过允许冰箱门自动打开或关闭，本发明的自动门打开和关闭装置可以提供令人满意的产品使用。

公开(公告)号：US20050256922A1

公开(公告)日：2005-11-17

申请号：US11113048

申请日：2005-04-25

申请人： Dong Kim ,  Young Moon ,  Ho Kim ,  Jae Yoon

发明人： Dong Kim ,  Young Moon ,  Ho Kim ,  Jae Yoon

IPC分类号： G06F19/00 ,  G06G7/00 ,  H02J3/00

CPC分类号： H02J3/00 ,  H02J2003/007 ,  Y02E60/76 ,  Y04S40/22

摘要： A system and method for calculating a real time voltage stability risk index in a power system are disclosed. The disclosed system comprises a real time phasor measurement device for calculating a voltage stability risk index using RMS voltage and an upper voltage stability monitoring system for collecting and sequencing the voltage stability risk index transferred from the real time phasor measurement device. The disclosed method comprises calculating RMS voltage by using bus voltage measured; calculating an N moving average voltage for the RMS voltages; calculating a % diversity between the bus voltage measured and the N moving average voltage; calculating a voltage stability risk index by dividing the area constructed by the % diversity by the number of sections; transferring the voltage stability risk index from a real time phasor measurement device to an upper voltage stability monitoring system; acquiring and sequencing the voltage stability risk indexes transferred.

摘要翻译： 公开了一种用于计算电力系统中的实时电压稳定性风险指数的系统和方法。 所公开的系统包括用于使用RMS电压计算电压稳定性风险指数的实时相量测量装置和用于收集和排序从实时相量测量装置传送的电压稳定性风险指数的上电压稳定性监测系统。 所公开的方法包括通过使用测量的母线电压来计算RMS电压; 计算RMS电压的N移动平均电压; 计算总线电压和N移动平均电压之间的百分比; 通过将由％多样性构成的面积除以截面数来计算电压稳定性风险指数; 将电压稳定性风险指数从实时相量测量装置转移到上电压稳定监测系统; 获取和排序转移的电压稳定性风险指数。

公开(公告)号：US20050237819A1

公开(公告)日：2005-10-27

申请号：US10878712

申请日：2004-06-28

申请人： Dong Kim

发明人： Dong Kim

IPC分类号： G11C5/00 ,  G11C7/10

CPC分类号： G11C7/1051 ,  G11C7/1069 ,  G11C7/1087

摘要： The present invention relates to a data output apparatus for a memory device, and more particularly to, a data output apparatus improved a data transferring speed by re-amplifying a data amplified by a bitline sense amplifier and transferring it to global input/output lines. The data output apparatus comprises: first and second local data lines for receiving data transferred from a pair of bitlines of a memory device; an amplifier interposed between the first and second local data lines; a first CMOS buffer means for receiving data on the first local data line; a second CMOS buffer means for receiving data on the second local data line; a first latch means for holding an output signal of the first CMOS buffer means; a second latch means for holding an output signal of the second CMOS buffer means; and a pull-up transistor and a pull-down transistor coupled between a driving voltage and a ground terminal in series. Here, an output signal of the first latch means is applied to a gate of the pull-up transistor, while an output signal of the second latch means is applied to the pull-down transistor.

摘要翻译： 本发明涉及一种用于存储器件的数据输出设备，更具体地说，涉及一种数据输出设备，通过重新放大由位线读出放大器放大的数据并将其传送到全局输入/输出线路来提高数据传输速度。 数据输出装置包括：第一和第二本地数据线，用于接收从存储器件的一对位线传送的数据; 放置在第一和第二本地数据线之间的放大器; 用于在第一本地数据线上接收数据的第一CMOS缓冲器装置; 用于在第二本地数据线上接收数据的第二CMOS缓冲器装置; 用于保持第一CMOS缓冲器装置的输出信号的第一锁存装置; 用于保持第二CMOS缓冲器装置的输出信号的第二锁存装置; 以及串联耦合在驱动电压和接地端子之间的上拉晶体管和下拉晶体管。 这里，第一锁存装置的输出信号被施加到上拉晶体管的栅极，而第二锁存装置的输出信号被施加到下拉晶体管。

公开(公告)号：US20050179027A1

公开(公告)日：2005-08-18

申请号：US10890215

申请日：2004-07-14

申请人： Je Kim ,  Jeong Oh ,  Dong Kim ,  Sun Kim ,  Jin Park ,  Kyu Lee

发明人： Je Kim ,  Jeong Oh ,  Dong Kim ,  Sun Kim ,  Jin Park ,  Kyu Lee

IPC分类号： H01L29/06 ,  H01L33/06 ,  H01L33/32

CPC分类号： H01L33/04 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/32

摘要： Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Alx1Iny1Ga(1−x1−y1)N (where 0≦x1≦1, 0≦y1≦1, and 0≦x1+y1≦1), a multiple quantum well-structured active layer made of undoped InAGa1−AN (where 0

摘要翻译： 本文公开了一种氮化物基半导体发光器件。 氮化物系半导体发光元件包括由n型Al x In 1（1-x1-y1）构成的n型覆盖层， N（其中0 <= X 1 <= 1，0 <= Y 1 <= 1，AND 0 <= X 1 1-y2 N（其中0 <= Y2-2 <1）和由p型Al < （1-x3-y3）N（其中0