公开(公告)号：US08565005B2

公开(公告)日：2013-10-22

申请号：US13599286

申请日：2012-08-30

Applicant: Takeshi Takagi ,  Zhiqiang Wei ,  Takeki Ninomiya ,  Shunsaku Muraoka ,  Yoshihiko Kanzawa

Inventor： Takeshi Takagi ,  Zhiqiang Wei ,  Takeki Ninomiya ,  Shunsaku Muraoka ,  Yoshihiko Kanzawa

IPC: G11C11/00

CPC classification number: H01L27/101 ,  G11C13/0007 ,  G11C13/0069 ,  G11C2013/0073 ,  G11C2013/0083 ,  G11C2213/31 ,  G11C2213/32 ,  G11C2213/56 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1625 ,  H01L45/1675

Abstract: A nonvolatile memory element includes: a first electrode layer; a second electrode layer; and a variable resistance layer which is placed between the electrode layers, and whose resistance state reversibly changes between a high resistance state and a low resistance state based on a polarity of a voltage applied between the electrode layers. The variable resistance layer is formed by stacking a first oxide layer including an oxide of a first transition metal and a second oxide layer including an oxide of a second transition metal which is different from the first transition metal. At least one of the following conditions is satisfied: (1) a dielectric constant of the second oxide layer is larger than a dielectric constant of the first oxide layer; and (2) a band gap of the second oxide layer is smaller than a band gap of the first oxide layer.

Abstract translation: 非易失性存储元件包括：第一电极层; 第二电极层; 以及可变电阻层，其设置在电极层之间，并且其电阻状态基于施加在电极层之间的电压的极性而在高电阻状态和低电阻状态之间可逆地变化。 可变电阻层通过堆叠包括第一过渡金属的氧化物的第一氧化物层和包含与第一过渡金属不同的第二过渡金属的氧化物的第二氧化物层而形成。 满足以下条件中的至少一个：（1）第二氧化物层的介电常数大于第一氧化物层的介电常数; 和（2）第二氧化物层的带隙小于第一氧化物层的带隙。

公开(公告)号：US20130242642A1

公开(公告)日：2013-09-19

申请号：US13809175

申请日：2012-08-09

Applicant: Koji Katayama ,  Satoru Mitani ,  Takeshi Takagi

Inventor： Koji Katayama ,  Satoru Mitani ,  Takeshi Takagi

IPC: G11C13/00

CPC classification number: G11C13/0069 ,  G11C13/00 ,  G11C13/0007 ,  G11C13/0064 ,  G11C2013/0073 ,  G11C2013/0092 ,  G11C2213/56 ,  G11C2213/79

Abstract: A variable resistance nonvolatile memory element writing method according to the present disclosure includes: (a) changing a variable resistance layer to a low resistance state by applying, to a second electrode, a first voltage which is negative with respect to a first electrode; and (b) changing the variable resistance layer to a high resistance state. Step (b) includes: (i) applying, to the second electrode, a second voltage which is positive with respect to the first electrode; and (ii) changing the variable resistance layer to the high resistance state by applying, to the second electrode, a third voltage, which is negative with respect to the first electrode and is smaller than the absolute value of a threshold voltage for changing the variable resistance layer from the high resistance state to the low resistance state, after the positive second voltage is applied in step (i).

Abstract translation: 根据本公开的可变电阻非易失性存储元件写入方法包括：（a）通过向第二电极施加相对于第一电极为负的第一电压，将可变电阻层改变为低电阻状态; 和（b）将可变电阻层改变为高电阻状态。 步骤（b）包括：（i）向第二电极施加相对于第一电极为正的第二电压; 和（ii）通过向所述第二电极施加相对于所述第一电极为负的第三电压并且小于用于改变所述变量的阈值电压的绝对值，将所述可变电阻层改变为高电阻状态 电阻层从高电阻状态到低电阻状态，在步骤（i）中施加正的第二电压之后。

公开(公告)号：US08535510B2

公开(公告)日：2013-09-17

申请号：US12450775

申请日：2008-04-15

Applicant: Tatsuo Kamata ,  Takeshi Takagi ,  Yuki Ito

Inventor： Tatsuo Kamata ,  Takeshi Takagi ,  Yuki Ito

IPC: G01N27/327

CPC classification number: C12Q1/001 ,  A61B5/14532 ,  A61B5/1486 ,  A61B5/1495 ,  A61B2560/0223

Abstract: This invention provides a substrate concentration measuring method for measuring a concentration of a substrate included in a specimen based on an output for measurement from an enzyme electrode when the enzyme electrode and the substrate are reacted with each other, the substrate concentration is calculated using an output for correction from the enzyme electrode obtained when a reference solution whose substrate concentration is known and the enzyme electrode are reacted with each other before or after the enzyme electrode and the substrate are reacted with each other. For example, the output for correction is measured by each specimen. In this method, the substrate concentration may be calculated using the output for correction for the specimen to be measured and an output for correction corresponding to the at least one other specimen and measured prior to the output for correction.

Abstract translation: 本发明提供一种基板浓度测量方法，用于当酶电极和基板彼此反应时，基于酶电极的测量输出测量样品中包含的基板的浓度，基板浓度使用输出 用于当酶底物浓度已知的参比溶液和酶电极在酶电极和底物之间彼此反应之前彼此反应的酶电极获得的酶电极校正。 例如，用于校正的输出由每个样本测量。 在该方法中，可以使用待测试样本的校正输出和与至少一个其他样本相对应的校正输出并在校正输出之前测量来计算衬底浓度。

公开(公告)号：US20130178042A1

公开(公告)日：2013-07-11

申请号：US13809473

申请日：2012-01-30

Applicant: Takeki Ninomiya ,  Yukio Hayakawa ,  Takumi Mikawa ,  Takeshi Takagi

Inventor： Takeki Ninomiya ,  Yukio Hayakawa ,  Takumi Mikawa ,  Takeshi Takagi

IPC: H01L45/00

CPC classification number: H01L45/1641 ,  G11C13/0007 ,  H01L45/08 ,  H01L45/146 ,  H01L45/1608 ,  H01L45/1675

Abstract: Provided is a method for manufacturing a variable resistance element, the method including: forming a first electrode material layer above a substrate; forming a first tantalum oxide material layer; forming a second tantalum oxide material layer; forming a second electrode material layer; and annealing at least the first tantalum oxide material layer after forming the first tantalum oxide material layer and before forming the second electrode material layer, wherein an oxygen content percentage of one of the first tantalum oxide material layer and the second tantalum oxide material layer is higher than an oxygen content percentage of the other.

Abstract translation: 提供一种制造可变电阻元件的方法，该方法包括：在衬底上形成第一电极材料层; 形成第一钽氧化物材料层; 形成第二钽氧化物材料层; 形成第二电极材料层; 以及在形成所述第一钽氧化物材料层之后并且在形成所述第二电极材料层之前至少退火所述第一钽氧化物材料层，其中所述第一钽氧化物材料层和所述第二氧化钽材料层中的一个的氧含量百分比较高 比另一个的氧含量百分比。

公开(公告)号：US08454823B2

公开(公告)日：2013-06-04

申请号：US13121872

申请日：2009-10-02

Applicant: Shin-ichi Oota ,  Hidenari Yamagata ,  Takeshi Takagi ,  Koji Egawa

Inventor： Shin-ichi Oota ,  Hidenari Yamagata ,  Takeshi Takagi ,  Koji Egawa

IPC: B01D15/08

CPC classification number: G01N35/1097 ,  B01F11/0002 ,  B01F11/0037 ,  B01L9/06 ,  B01L2300/0851 ,  G01N30/06 ,  G01N2035/00524

Abstract: A sample stirring device of the present invention includes a driving roller and two follower rollers for coming into contact with a sample container including a cylindrical portion for containing a sample to be stirred. The driving roller is driven for rotation to stir the sample contained in the sample container. The two follower rollers have rotation axes inclined with respect to an axial direction of the cylindrical portion. This arrangement allows the sample container such as a blood collection tube to be rotated stably.

Abstract translation: 本发明的样品搅拌装置包括驱动辊和两个从动辊，用于与包括用于容纳待搅拌样品的圆筒部分的样品容器接触。 驱动辊被驱动旋转以搅拌包含在样品容器中的样品。 两个从动辊具有相对于圆筒部的轴向倾斜的旋转轴。 这种布置允许诸如采血管的样品容器能够稳定地旋转。

公开(公告)号：US08445319B2

公开(公告)日：2013-05-21

申请号：US13205408

申请日：2011-08-08

Applicant: Yoshihiko Kanzawa ,  Koji Katayama ,  Satoru Fujii ,  Shunsaku Muraoka ,  Koichi Osano ,  Satoru Mitani ,  Ryoko Miyanaga ,  Takeshi Takagi ,  Kazuhiko Shimakawa

Inventor： Yoshihiko Kanzawa ,  Koji Katayama ,  Satoru Fujii ,  Shunsaku Muraoka ,  Koichi Osano ,  Satoru Mitani ,  Ryoko Miyanaga ,  Takeshi Takagi ,  Kazuhiko Shimakawa

IPC: H01L47/00

CPC classification number: H01L27/101 ,  G11C13/0007 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0073 ,  G11C2213/32 ,  G11C2213/71 ,  G11C2213/72 ,  G11C2213/79 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1625 ,  H01L45/1675 ,  Y10S438/90

Abstract: A nonvolatile memory element comprises a first electrode layer (103), a second electrode (107), and a resistance variable layer (106) which is disposed between the first electrode layer (103) and the second electrode layer (107), a resistance value of the resistance variable layer varying reversibly according to electric signals having different polarities which are applied between the electrodes (103), (107), wherein the resistance variable layer (106) has a first region comprising a first oxygen-deficient tantalum oxide having a composition represented by TaOx (0

Abstract translation: 非易失性存储元件包括设置在第一电极层（103）和第二电极层（107）之间的第一电极层（103），第二电极（107）和电阻变化层（106），电阻 电阻变化层的值根据施加在电极（103），（107）之间的具有不同极性的电信号而可逆地变化，其中电阻变化层（106）具有第一区域，该第一区域包括第一氧缺陷型氧化钽， 由TaOx（0

公开(公告)号：US20130082230A1

公开(公告)日：2013-04-04

申请号：US13703533

申请日：2011-09-30

Applicant: Koji Katayama ,  Takeshi Takagi

Inventor： Koji Katayama ,  Takeshi Takagi

IPC: H01L45/00

CPC classification number: H01L45/16 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1625 ,  H01L45/1641 ,  H01L45/1675

Abstract: A variable resistance nonvolatile memory element manufacturing method includes: forming a first electrode on a substrate; forming a first metal oxide layer having a predetermined oxygen content atomic percentage on the first electrode; forming, in at least one part of the first metal oxide layer, a modified layer higher in resistance than the first metal oxide layer, by oxygen deficiency reduction; forming a second metal oxide layer lower in oxygen content atomic percentage than the first metal oxide layer, on the modified layer; and forming a second electrode on the second metal oxide layer. A variable resistance layer includes the first metal oxide layer having the modified layer and the second metal oxide layer, connects to the first electrode and the second electrode, and changes between high and low resistance states according to electrical pulse polarity.

Abstract translation: 可变电阻非易失性存储元件的制造方法包括：在基板上形成第一电极; 在所述第一电极上形成具有预定氧含量原子百分比的第一金属氧化物层; 在第一金属氧化物层的至少一部分中，通过缺氧减少形成比第一金属氧化物层更高的电阻的改性层; 在所述改性层上形成氧含量比第一金属氧化物层低的原子百分比的第二金属氧化物层; 以及在所述第二金属氧化物层上形成第二电极。 可变电阻层包括具有改性层和第二金属氧化物层的第一金属氧化物层，连接到第一电极和第二电极，并且根据电脉冲极性在高电阻状态和低电阻状态之间变化。

公开(公告)号：US08406035B2

公开(公告)日：2013-03-26

申请号：US13056925

申请日：2010-05-14

Applicant: Yoshikazu Katoh ,  Shunsaku Muraoka ,  Takeshi Takagi

Inventor： Yoshikazu Katoh ,  Shunsaku Muraoka ,  Takeshi Takagi

IPC: G11C11/00

CPC classification number: G11C13/0069 ,  G11C11/14 ,  G11C11/5685 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/0038 ,  G11C2013/0073 ,  G11C2013/009 ,  G11C2213/15 ,  G11C2213/34 ,  G11C2213/79 ,  G11C2213/82

Abstract: A resistance variable layer has a characteristic in which the resistance variable layer changes to a second resistance state (RL) in such a manner that its resistance value stops decreasing when an interelectrode voltage reaches a first voltage (V1) which is a negative voltage, the resistance variable layer changes to a first resistance state (RH) in such a manner that its resistance value starts increasing when the interelectrode voltage reaches a second voltage (V2) which is a positive voltage which is equal in absolute value to the first voltage, the resistance variable layer changes to the first resistance state in such a manner that the resistance variable layer flows an interelectrode current such that the interelectrode voltage is maintained at a third voltage (V3) higher than the second voltage, when the interelectrode voltage reaches the third voltage, and the resistance variable layer changes to the first resistance state in such a manner that its resistance value stops increasing when the interelectrode current reaches a first current (Ilim) in a state where the interelectrode voltage is not lower than the second voltage and lower than the third voltage, and the load resistor has a characteristic in which when the electric pulse application device outputs an electric pulse of a second application voltage (VP2), a current flowing by applying to the load resistor, a voltage obtained by subtracting the third voltage from the second application voltage, is not higher than a first current value.

Abstract translation: 电阻变化层具有电阻变化层变为第二电阻状态（RL）的特性，使得当电极间电压达到作为负电压的第一电压（V1）时，其电阻值停止减小， 电阻变化层以这样的方式改变为第一电阻状态（RH），使得当电极间电压达到作为与第一电压的绝对值相等的正电压的第二电压（V2）时，其电阻值开始增加， 电阻变化层以这样的方式变化为电阻变化层流动电极间电流，使得当电极间电压达到第三电压时，电极间电压保持在高于第二电压的第三电压（V3） ，并且电阻变化层以其电阻值停止增加的方式变为第一电阻状态 当所述电极间电流在所述电极间电压不低于所述第二电压且低于所述第三电压的状态下达到第一电流（Ilim）时，并且所述负载电阻器具有当所述电脉冲施加装置输出 第二施加电压（VP2）的电脉冲，通过施加到负载电阻器流动的电流，从第二施加电压减去第三电压获得的电压不高于第一电流值。

公开(公告)号：US08345465B2

公开(公告)日：2013-01-01

申请号：US12745300

申请日：2009-09-30

Applicant: Shunsaku Muraoka ,  Takeshi Takagi ,  Satoru Mitani ,  Koji Katayama

Inventor： Shunsaku Muraoka ,  Takeshi Takagi ,  Satoru Mitani ,  Koji Katayama

IPC: G11C11/00

CPC classification number: G11C13/0007 ,  G11C13/0033 ,  G11C13/0064 ,  G11C13/0069 ,  G11C2013/0073 ,  G11C2013/0083 ,  G11C2013/009 ,  G11C2213/31 ,  G11C2213/32 ,  G11C2213/34

Abstract: A method of driving a variable resistance element includes: a writing step performed by applying a writing voltage pulse having a first polarity to a variable resistance layer to change a resistance state of the layer from high to low; and an erasing step performed by applying an erasing voltage pulse having a second polarity to the layer to change the state from low to high. Here, |Vw1|>|Vw2| where Vw1 represents a voltage value of the writing voltage pulse for first to N-th writing steps (N≧1) and Vw2 represents a voltage value of the writing voltage pulse for (N+1)-th and subsequent writing steps, and |Ve1|>|Ve2| where Ve1 represents a voltage value of the erasing voltage pulse for first to M-th erasing steps (M≧1) and Ve2 represents a voltage value of the erasing voltage pulse for (M+1)-th and subsequent erasing steps. The (N+1)-th writing step follows the M-th erasing step.

Abstract translation: 驱动可变电阻元件的方法包括：通过将具有第一极性的写入电压脉冲施加到可变电阻层而将层的电阻状态从高变为低的步骤来执行写入步骤; 以及通过将具有第二极性的擦除电压脉冲施加到该层以将状态从低变为高而执行的擦除步骤。 这里，| Vw1 |> | Vw2 | 其中Vw1表示第一至第N写入步骤（N≥1）的写入电压脉冲的电压值，Vw2表示第（N + 1）个和后续写入步骤中的写入电压脉冲的电压值， Ve1 |> | Ve2 | 其中Ve1表示第一至第M擦除步骤（M≥1）的擦除电压脉冲的电压值，Ve2表示（M + 1）次和随后的擦除步骤中的擦除电压脉冲的电压值。 第（N + 1）个写入步骤在第M擦除步骤之后。

公开(公告)号：US08279657B2

公开(公告)日：2012-10-02

申请号：US12990323

申请日：2009-12-04

Applicant: Takeshi Takagi ,  Zhiqiang Wei ,  Takeki Ninomiya ,  Shunsaku Muraoka ,  Yoshihiko Kanzawa

Inventor： Takeshi Takagi ,  Zhiqiang Wei ,  Takeki Ninomiya ,  Shunsaku Muraoka ,  Yoshihiko Kanzawa

IPC: G11C11/00

CPC classification number: H01L27/101 ,  G11C13/0007 ,  G11C13/0069 ,  G11C2013/0073 ,  G11C2013/0083 ,  G11C2213/31 ,  G11C2213/32 ,  G11C2213/56 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1625 ,  H01L45/1675

Abstract: Provided is a nonvolatile memory element which is capable of performing a stable resistance change operation at a low breakdown voltage.A nonvolatile memory element (100) includes: a first electrode layer (103); a second electrode layer (105); and a variable resistance layer (104) which is placed between the electrodes (103 and 105), and whose resistance state reversibly changes between a high resistance state and a low resistance state based on a polarity of a voltage applied between the electrodes (103 and 105). The variable resistance layer (104) is formed by stacking a first oxide layer (104a) including an oxide of a first transition metal and a second oxide layer (104b) including an oxide of a second transition metal which is different from the first transition metal. At least one of the following conditions is satisfied: (1) a dielectric constant of the second oxide layer (104b) is larger than a dielectric constant of the first oxide layer (104a); and (2) a band gap of the second oxide layer (104b) is smaller than a band gap of the first oxide layer (104a).

Abstract translation: 提供一种能够在低击穿电压下进行稳定的电阻变化操作的非易失性存储元件。 非易失性存储元件（100）包括：第一电极层（103）; 第二电极层（105）; 和位于电极（103和105）之间的可变电阻层（104），并且其电阻状态基于在电极（103和103）之间施加的电压的极性而在高电阻状态和低电阻状态之间可逆地变化 105）。 可变电阻层（104）通过堆叠包括第一过渡金属的氧化物的第一氧化物层（104a）和包含与第一过渡金属不同的第二过渡金属的氧化物的第二氧化物层（104b） 。 满足以下条件中的至少一个：（1）第二氧化物层（104b）的介电常数大于第一氧化物层（104a）的介电常数; 和（2）第二氧化物层（104b）的带隙小于第一氧化物层（104a）的带隙。