公开(公告)号：US12136663B2

公开(公告)日：2024-11-05

申请号：US17437143

申请日：2020-03-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Tetsuya Kakehata ,  Yuichi Sato ,  Atsushi Shibazaki ,  Kazuki Tanemura ,  Takashi Hirose

IPC: H01L29/66 ,  H01L27/12 ,  H01L29/786 ,  H01L21/02 ,  H01L21/8258 ,  H01L27/06

Abstract: A semiconductor device with little variation in transistor characteristics is provided. First to third oxide films, a first conductive film, a first insulating film, and a second conductive film are sequentially formed. Shaping them into island-like shapes. An insulator is formed over the island-like shapes and an opening is formed in the insulator and a part of the island-like shapes. Another oxide film, a gate insulating film, and a gate electrode are formed in the opening in this order to form the transistor.

公开(公告)号：US12136465B2

公开(公告)日：2024-11-05

申请号：US17922659

申请日：2021-05-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takeshi Aoki ,  Yoshiyuki Kurokawa ,  Munehiro Kozuma ,  Takuro Kanemura ,  Tatsunori Inoue

IPC: G11C5/06 ,  G11C5/10 ,  G11C11/22 ,  H01L29/66 ,  H01L29/78 ,  H10B53/30

Abstract: A semiconductor device with a small circuit area and low power consumption is provided. The semiconductor device includes first to fourth cells, a current mirror circuit, and first to fourth wirings, and the first to fourth cells each include a first transistor, a second transistor, and a capacitor. In each of the first to fourth cells, a first terminal of the first transistor is electrically connected to a first terminal of the capacitor and a gate of the second transistor. The first wiring is electrically connected to first terminals of the second transistors in the first cell and the second cell, the second wiring is electrically connected to first terminals of the second transistors in the third cell and the fourth cell, the third wiring is electrically connected to second terminals of the capacitors in the first cell and the third cell, and the fourth wiring is electrically connected to second terminals of the capacitors in the second cell and the fourth cell. The current mirror circuit is electrically connected to the first wiring and the second wiring.

公开(公告)号：US20240365597A1

公开(公告)日：2024-10-31

申请号：US18573966

申请日：2022-06-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hidekazu MIYAIRI ,  Yoshinobu ASAMI ,  Takahiro FUJIE ,  Ryo TAGASHIRA

IPC: H10K59/122 ,  H10K59/12

CPC classification number: H10K59/122 ,  H10K59/1201

Abstract: A display apparatus with high display quality is provided. The display apparatus includes a first pixel, a second pixel placed to be adjacent to the first pixel, a first insulating layer, and a second insulating layer over the first insulating layer. The first pixel includes a first pixel electrode, a first EL layer covering the first pixel electrode, a third insulating layer over the first EL layer, and a common electrode over the first EL layer and the third insulating layer. The second pixel includes a second pixel electrode, a second EL layer covering the second pixel electrode, a fourth insulating layer over the second EL layer, and the common electrode over the second EL layer and the fourth insulating layer. Part of the second insulating layer overlaps with the first pixel electrode. Another part of the second insulating layer overlaps with the second pixel electrode. In a cross-sectional view of the display apparatus, a side surface of the second insulating layer has a tapered shape and a top surface thereof has a convex shape.

公开(公告)号：US20240363905A1

公开(公告)日：2024-10-31

申请号：US18763137

申请日：2024-07-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kazuhei NARITA ,  Ryota TAJIMA

IPC: H01M10/0569 ,  H01G11/52 ,  H01G11/60 ,  H01G11/62 ,  H01G11/68 ,  H01G11/78 ,  H01M4/66 ,  H01M10/052 ,  H01M10/0568 ,  H01M50/119 ,  H01M50/121 ,  H01M50/129 ,  H01M50/136 ,  H01M50/178 ,  H01M50/429 ,  H01M50/44 ,  H01M50/55 ,  H01M50/557

CPC classification number: H01M10/0569 ,  H01G11/52 ,  H01G11/60 ,  H01G11/62 ,  H01G11/68 ,  H01G11/78 ,  H01M4/661 ,  H01M4/662 ,  H01M10/052 ,  H01M10/0568 ,  H01M50/136 ,  H01M50/178 ,  H01M50/4295 ,  H01M50/44 ,  H01M50/55 ,  H01M50/557 ,  H01M50/119 ,  H01M50/121 ,  H01M50/129 ,  H01M2220/30 ,  Y02E60/13

Abstract: Provided is a power storage device whose charging and discharging characteristics are unlikely to be degraded by heat treatment or a power storage device that is highly safe against heat treatment. The power storage device includes a positive electrode, a negative electrode, a separator, an electrolyte, and an exterior body. The separator is positioned between the positive electrode and the negative electrode and includes polyphenylene sulfide or cellulosic fiber. The electrolyte includes propylene carbonate, ethylene carbonate, and vinylene carbonate, lithium hexafluorophosphate, and lithium bis(pentafluoroethanesulfonyl)amide. A concentration of lithium hexafluorophosphate with respect to the electrolyte is more than or equal to 0.01 wt % and less than or equal to 1.9 wt % in a weight ratio.

公开(公告)号：US12132057B2

公开(公告)日：2024-10-29

申请号：US17639744

申请日：2020-08-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hitoshi Kunitake ,  Tatsuya Onuki ,  Hajime Kimura ,  Takayuki Ikeda ,  Shunpei Yamazaki

IPC: H01L27/12 ,  H01L29/786 ,  H10B12/00

CPC classification number: H01L27/1255 ,  H01L27/1225 ,  H01L29/78648 ,  H01L29/7869 ,  H10B12/00

Abstract: A semiconductor device that occupies a small area is provided. The semiconductor device includes a first transistor including a first oxide semiconductor; a second transistor including a second oxide semiconductor; a capacitor element; a first insulator; and a first conductor in contact with a source or a drain of the second transistor. The capacitor element includes a second conductor, a third conductor, and a second insulator. The first transistor, the second transistor, and the first conductor are placed to be embedded in the first insulator. The second conductor is placed in contact with a top surface of the first conductor and a top surface of a gate of the first transistor. The second insulator is placed over the second conductor and the first insulator. The third conductor is placed to cover the second conductor with the second insulator therebetween.

公开(公告)号：US20240357904A1

公开(公告)日：2024-10-24

申请号：US18632440

申请日：2024-04-11

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yuki HAYASHI

IPC: H10K59/80 ,  H10K59/35

CPC classification number: H10K59/873 ,  H10K59/35 ,  H10K59/8791

Abstract: A display device in which a color conversion layer using quantum dots hardly deteriorates is provided. The display device includes a substrate, an insulating layer, a color conversion layer, a first inorganic film, and a second inorganic film; the insulating layer is positioned over the substrate and has an opening; the color conversion layer includes a portion positioned in the opening; the first inorganic film includes a portion positioned between the insulating layer and the color conversion layer in the opening and a portion positioned between the substrate and the color conversion layer in the opening; and the second inorganic film includes a portion positioned over the color conversion layer.

公开(公告)号：US20240356067A1

公开(公告)日：2024-10-24

申请号：US18395852

申请日：2023-12-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yumiko YONEDA ,  Masaki YAMAKAJI ,  Ryota TAJIMA ,  Masaaki HIROKI

IPC: H01M10/0565 ,  H01M4/02 ,  H01M4/13 ,  H01M10/04 ,  H01M10/052 ,  H01M10/0585 ,  H01M50/119 ,  H01M50/121 ,  H01M50/122 ,  H01M50/124

CPC classification number: H01M10/0565 ,  H01M4/02 ,  H01M4/13 ,  H01M10/0436 ,  H01M10/052 ,  H01M10/0585 ,  H01M50/119 ,  H01M50/121 ,  H01M50/122 ,  H01M50/124 ,  H01M2300/0085 ,  Y02T10/70

Abstract: A gel electrolyte and a separator are provided between the positive electrode current collector and the negative electrode current collector. The plurality of positive electrode current collectors and the plurality of negative electrode current collectors are stacked such that surfaces of negative electrodes with which active material layers are not coated or surfaces of positive electrodes with which active material layers are not coated are in contact with each other.

公开(公告)号：US20240356027A1

公开(公告)日：2024-10-24

申请号：US18760368

申请日：2024-07-01

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Takahiro KAWAKAMI ,  Masaki YAMAKAJI

IPC: H01M4/58 ,  B60L50/64 ,  B82Y30/00 ,  H01M4/02 ,  H01M4/136 ,  H01M4/1397 ,  H01M10/04 ,  H01M10/0525

CPC classification number: H01M4/5825 ,  B60L50/64 ,  B82Y30/00 ,  H01M4/136 ,  H01M4/1397 ,  H01M10/0436 ,  H01M10/0525 ,  H01M2004/021 ,  H01M2004/028 ,  H01M2220/20 ,  Y02E60/10 ,  Y02P70/50 ,  Y02T10/70

Abstract: An object is to improve the characteristics of a power storage device such as a charging and discharging rate or a charge and discharge capacity. The grain size of particles of a positive electrode active material is nano-sized so that a surface area per unit mass of the active material is increased. Specifically, the grain size is set to greater than or equal to 10 nm and less than or equal to 100 nm, preferably greater than or equal to 20 nm and less than or equal to 60 nm. Alternatively, the surface area per unit mass is set to 10 m2/g or more, preferably 20 m2/g or more. Further, the crystallinity of the active material is increased by setting an XRD half width to greater than or equal to 0.12° and less than 0.17°, preferably greater than or equal to 0.13° and less than 0.16°.

公开(公告)号：US12127479B2

公开(公告)日：2024-10-22

申请号：US18381846

申请日：2023-10-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Satoshi Seo ,  Takao Hamada ,  Tatsuyoshi Takahashi ,  Yasushi Kitano ,  Hiroki Suzuki ,  Hideko Inoue

IPC: H01L51/50 ,  C07D403/14 ,  H10K85/60 ,  H10K85/30

CPC classification number: H10K85/6572 ,  C07D403/14 ,  H10K85/342 ,  H10K85/633 ,  H10K85/636 ,  Y02P20/582

Abstract: To provide a light-emitting element with an improved reliability, a light-emitting element with a high current efficiency (or a high quantum efficiency), and a novel dibenzo[f,h]quinoxaline derivative that is favorably used in a light-emitting element which is one embodiment of the present invention. A light-emitting element includes an EL layer between an anode and a cathode. The EL layer includes a light-emitting layer; the light-emitting layer contains a first organic compound having an electron-transport property and a hole-transport property, a second organic compound having a hole-transport property, and a light-emitting substance; the combination of the first organic compound and the second organic compound forms an exciplex; the HOMO level of the first organic compound is lower than the HOMO level of the second organic compound; and a difference between the HOMO level of the first organic compound and the HOMO level of the second organic compound is less than or equal to 0.4 eV.

公开(公告)号：US12127418B2

公开(公告)日：2024-10-22

申请号：US18084642

申请日：2022-12-20

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Satoshi Seo ,  Nobuharu Ohsawa

IPC: H10K50/11 ,  H10K50/13 ,  H10K59/32 ,  H10K59/35 ,  H10K59/38 ,  H10K101/40

CPC classification number: H10K50/11 ,  H10K50/131 ,  H10K59/351 ,  H10K59/32 ,  H10K59/38 ,  H10K2101/40

Abstract: A light-emitting device, an electronic device, and a display device each consume less power are provided. The light-emitting device includes a first light-emitting element, a second light-emitting element, and a third light-emitting element that share an EL layer. The EL layer includes a layer containing a light-emitting material that emits blue fluorescence and a layer containing a light-emitting material that emits yellow or green phosphorescence. Light emitted from the second light-emitting element enters a color filter layer or a second color conversion layer, and light emitted from the third light-emitting element enters a first color conversion layer.