摘要:
An RTA method has a limitation on miniaturization. The RTA method needs a heating time of several seconds, and has a risk that impurities are diffused into a deep portion, since a semiconductor substrate is heated at a high temperature. Thus, the RTA method has a difficulty in responding miniaturization which is expected in the future. According to the present invention, a fundamental wave is used without putting laser light into a non-linear optical device, and laser annealing is conducted by irradiating an impurity diffusion layer with pulsed laser light having high intensity and a high repetition rate, so as to electrically activate the impurities. By the present invention, a thin layer on the surface of a silicon substrate can be partially melted to conduct activation. Further, the width of the region activated by laser-scanning once can be increased, and thus the productivity can be enhanced dramatically.
摘要:
An object of the present invention is to provide a laser irradiation method and a laser irradiation apparatus for irradiating an irradiation surface with a linear beam having more homogeneous intensity by blocking a low-intensity part of the linear beam without forming the fringes due to the diffraction on the irradiation surface. In the laser irradiation, a laser beam emitted from a laseroscillator 101 passes through a slit 102 so as to block a low-intensity part of the laser beam, the traveling direction of the laser beam is bent by a mirror 103, and an image formed at the slit is projected to an irradiation surface 106 by a convex cylindrical lens 104.
摘要:
An intake system has an intake pipe, a passage member which is inserted into a peripheral wall of the intake pipe in a radial direction to form an intake passage passing across a front end and a rear end thereof in a direction of insertion along with the intake pipe, a seal member which is arranged at a seam between the peripheral wall of the intake pipe and the passage member and seals the seam, and an elastic member which is made of the same material as that of the seal member and is interposed between the peripheral wall of the intake pipe and the front end of the passage member so as to be capable of giving the front end of the passage member an elastic reaction force in a direction perpendicular to the axis of the direction of insertion.
摘要:
The invention relates to a laser treatment apparatus including a laser oscillator, an interlock provided in the laser oscillator, a movable table which moves with a certain movement period, a timer, an interlock provided in the timer, a sensor which can detect movement of the movable table, and a computer, in which the timer starts measuring time when the sensor senses passage of the movable table, and when the movable table does not pass the sensor even after the movement period, conduction between contacts of the interlock provided in the timer is blocked to operate the interlock in the laser oscillator, thereby stopping laser output. The invention also relates to a laser treatment method using the laser treatment apparatus.
摘要:
It is an object of the present invention to provide a method of separating a thin film transistor, and circuit or a semiconductor device including the thin film transistor from a substrate by a method different from that disclosed in the patent document 1 and transposing the thin film transistor, and the circuit or the semiconductor device to a substrate having flexibility. According to the present invention, a large opening or a plurality of openings is formed at an insulating film, a conductive film connected to a thin film transistor is formed at the opening, and a peeling layer is removed, then, a layer having the thin film transistor is transposed to a substrate provided with a conductive film or the like. A thin film transistor according to the present invention has a semiconductor film which is crystallized by laser irradiation and prevents a peeling layer from exposing at laser irradiation not to be irradiated with laser light.
摘要:
An object of the present invention is to provide a laser irradiation method being able to control the irradiation position of the laser beam accurately compared with the conventional irradiation method. Another object of the present invention is to provide a method for manufacturing a semiconductor device with the use of the laser irradiation method being able to irradiate a large substrate accurately with the laser beam. The irradiation position of the laser beam is controlled by using a laser oscillator emitting a laser beam, an optical system for shaping the laser beam into rectangular on the irradiation object, means for moving the irradiation object relative to the laser beam in the long-side direction and the short-side direction of the beam spot, means for moving the irradiation object more slowly in the long-side direction than in the short-side direction, and a laser positioning mechanism.
摘要:
A hydraulic circuit for a hydraulic cylinder capable of executing and adjusting a shock absorbing function at the time of stopping the operation of a cylinder piston rod and releasing the function, comprises a damping control valve (v1) having a first switching position (v11) which blocks the connection of the accumulation port (22) with outside and performs supply and discharge or discharge and supply of the operating oil with respect to the first cylinder chamber (3) and the second cylinder chamber (4), a second switching position (v12) connecting at least the accumulation port (22) and the second cylinder chamber (4), and a third switching position (v13) connecting at least the accumulation port (22) and the first cylinder chamber (3).
摘要:
In forming an interconnection having a structure in which an Al interconnection is covered with an interlayer insulating film, for the purpose of preventing voids to be created in the Al interconnection layer, together with suppressing the current leakage owing to the generation of etching residues, a multi-layered structure including a barrier layer (4), an Al interconnection metal layer (5), a Ti layer (2b) and an anti-reflection layer (6) is formed on a semiconductor substrate having an insulating surface, and thereafter layers of said multi-layered structure are patterned, at least, down to the Ti layer (2b) into the shape of structure is heated so as to turn the Ti layer (2b) into an AlTi alloy layer and, then, the steps of growing an interlayer insulating film to bury said patterned interconnection planarizing the interlayer insulating film and carrying out another heat treatment to degas the interlayer insulating film are performed.
摘要:
A lower aluminum line is exposed to a via-hole formed in an inter-level insulating layer, and an outgassing is carried out before deposition for an upper aluminum line connected through the via-hole to the lower aluminum line, wherein the outgassing is carried out at a substrate temperature equal to or less than the maximum substrate temperature in the formation of the inter-level insulating layer so that a hillock and a whisker due to the thermal stress do not take place in the lower aluminum line.
摘要:
A shift control system for a continuously variable transmission, in which a road load on a vehicle is detected, the lower limit speed is set according to the detected road load, in which a target input speed, as set according to the running state of a vehicle, is restricted with the set lower limit speed, and in which the gear ratio of the continuously variable transmission is controlled so that the actual input speed may be equal to the target input speed restricted. The target input speed is restricted after the actual input speed is more than the lower limit value, when the road load is light, and said target input speed is restricted irrespective of the actual input speed when the road load is heavy.