Semiconductor device and manufacturing method of the same
    141.
    发明申请
    Semiconductor device and manufacturing method of the same 失效
    半导体器件及其制造方法相同

    公开(公告)号:US20070087458A1

    公开(公告)日:2007-04-19

    申请号:US10579239

    申请日:2005-11-16

    摘要: An RTA method has a limitation on miniaturization. The RTA method needs a heating time of several seconds, and has a risk that impurities are diffused into a deep portion, since a semiconductor substrate is heated at a high temperature. Thus, the RTA method has a difficulty in responding miniaturization which is expected in the future. According to the present invention, a fundamental wave is used without putting laser light into a non-linear optical device, and laser annealing is conducted by irradiating an impurity diffusion layer with pulsed laser light having high intensity and a high repetition rate, so as to electrically activate the impurities. By the present invention, a thin layer on the surface of a silicon substrate can be partially melted to conduct activation. Further, the width of the region activated by laser-scanning once can be increased, and thus the productivity can be enhanced dramatically.

    摘要翻译: RTA方法对小型化有限制。 RTA方法需要几秒的加热时间,并且由于半导体衬底在高温下被加热,所以具有将杂质扩散到深部的风险。 因此,RTA方法难以应对未来预期的小型化。 根据本发明,在不将激光投射到非线性光学元件中的情况下使用基波,通过用具有高强度和高重复率的脉冲激光照射杂质扩散层来进行激光退火,以便 电激活杂质。 通过本发明,硅衬底表面上的薄层可以被部分熔化以进行活化。 此外,通过激光扫描一次激活的区域的宽度可以增加,从而可以显着提高生产率。

    Laser irradiation method and laser irradiation apparatus
    142.
    发明申请
    Laser irradiation method and laser irradiation apparatus 有权
    激光照射方法和激光照射装置

    公开(公告)号:US20070077696A1

    公开(公告)日:2007-04-05

    申请号:US10582013

    申请日:2005-03-24

    IPC分类号: H01L21/84 H01L21/00

    摘要: An object of the present invention is to provide a laser irradiation method and a laser irradiation apparatus for irradiating an irradiation surface with a linear beam having more homogeneous intensity by blocking a low-intensity part of the linear beam without forming the fringes due to the diffraction on the irradiation surface. In the laser irradiation, a laser beam emitted from a laseroscillator 101 passes through a slit 102 so as to block a low-intensity part of the laser beam, the traveling direction of the laser beam is bent by a mirror 103, and an image formed at the slit is projected to an irradiation surface 106 by a convex cylindrical lens 104.

    摘要翻译: 本发明的目的是提供一种激光照射方法和激光照射装置,用于通过阻挡线性光束的低强度部分而不会由于衍射而形成条纹而用具有更均匀强度的线性光束照射照射表面 在照射面上。 在激光照射中,从激光器101发射的激光束通过狭缝102,以阻挡激光束的低强度部分,激光束的行进方向被反射镜103弯曲,形成图像 在狭缝处通过凸柱面透镜104投影到照射表面106。

    Intake system
    143.
    发明授权
    Intake system 失效
    进气系统

    公开(公告)号:US07140383B2

    公开(公告)日:2006-11-28

    申请号:US10767990

    申请日:2004-02-02

    IPC分类号: F16K1/226 F16K27/02

    摘要: An intake system has an intake pipe, a passage member which is inserted into a peripheral wall of the intake pipe in a radial direction to form an intake passage passing across a front end and a rear end thereof in a direction of insertion along with the intake pipe, a seal member which is arranged at a seam between the peripheral wall of the intake pipe and the passage member and seals the seam, and an elastic member which is made of the same material as that of the seal member and is interposed between the peripheral wall of the intake pipe and the front end of the passage member so as to be capable of giving the front end of the passage member an elastic reaction force in a direction perpendicular to the axis of the direction of insertion.

    摘要翻译: 进气系统具有进气管,通道构件,其在径向方向上插入进气管的周壁,以形成沿着进气口的插入方向穿过其前端和后端的进气通道 管道,密封构件,其布置在进气管的周壁和通道构件之间的接缝处,并且密封接缝;以及弹性构件,其由与密封构件相同的材料制成,并且插入在 进气管的周壁和通道构件的前端,以便能够使通道构件的前端在垂直于插入方向的轴线的方向上产生弹性反作用力。

    Laser treatment apparatus, laser treatment method, and manufacturing method of semiconductor device
    144.
    发明申请
    Laser treatment apparatus, laser treatment method, and manufacturing method of semiconductor device 有权
    激光治疗装置,激光治疗方法及半导体装置的制造方法

    公开(公告)号:US20060141754A1

    公开(公告)日:2006-06-29

    申请号:US11274272

    申请日:2005-11-16

    IPC分类号: H01L21/20 H01L21/36

    摘要: The invention relates to a laser treatment apparatus including a laser oscillator, an interlock provided in the laser oscillator, a movable table which moves with a certain movement period, a timer, an interlock provided in the timer, a sensor which can detect movement of the movable table, and a computer, in which the timer starts measuring time when the sensor senses passage of the movable table, and when the movable table does not pass the sensor even after the movement period, conduction between contacts of the interlock provided in the timer is blocked to operate the interlock in the laser oscillator, thereby stopping laser output. The invention also relates to a laser treatment method using the laser treatment apparatus.

    摘要翻译: 本发明涉及一种激光治疗装置,包括激光振荡器,设置在激光振荡器中的联锁装置,以一定运动周期移动的可移动工作台,定时器,定时器中设置的互锁装置,能够检测 活动台和计算机,其中定时器开始测量时间,当传感器感测到可移动台的通过时,并且当移动台甚至在移动时段之后也不通过传感器时,设置在定时器中的互锁装置的触点之间的传导 被阻止在激光振荡器中操作互锁,从而停止激光输出。 本发明还涉及使用激光治疗装置的激光治疗方法。

    Laser irradiation apparatus and method for manufacturing semiconductor device using the laser irradiation apparatus
    146.
    发明申请
    Laser irradiation apparatus and method for manufacturing semiconductor device using the laser irradiation apparatus 有权
    激光照射装置及使用该激光照射装置的半导体装置的制造方法

    公开(公告)号:US20050214986A1

    公开(公告)日:2005-09-29

    申请号:US11087843

    申请日:2005-03-24

    摘要: An object of the present invention is to provide a laser irradiation method being able to control the irradiation position of the laser beam accurately compared with the conventional irradiation method. Another object of the present invention is to provide a method for manufacturing a semiconductor device with the use of the laser irradiation method being able to irradiate a large substrate accurately with the laser beam. The irradiation position of the laser beam is controlled by using a laser oscillator emitting a laser beam, an optical system for shaping the laser beam into rectangular on the irradiation object, means for moving the irradiation object relative to the laser beam in the long-side direction and the short-side direction of the beam spot, means for moving the irradiation object more slowly in the long-side direction than in the short-side direction, and a laser positioning mechanism.

    摘要翻译: 本发明的目的是提供一种能够与传统的照射方法相比准确地控制激光束的照射位置的激光照射方法。 本发明的另一个目的是提供一种使用激光照射方法制造半导体器件的方法,该方法能够用激光束精确地照射大的衬底。 激光束的照射位置通过使用发射激光束的激光振荡器,用于将激光束成形为照射对象上的矩形的光学系统来控制,用于使照射对象相对于激光束在长边方向上移动的装置 光束点的方向和短边方向,用于使照射物体在长边方向上比在短边方向上更慢地移动的装置,以及激光定位机构。

    Manufacturing method of forming interconnection in semiconductor device
    148.
    发明授权
    Manufacturing method of forming interconnection in semiconductor device 失效
    在半导体器件中形成互连的制造方法

    公开(公告)号:US06448172B1

    公开(公告)日:2002-09-10

    申请号:US09512246

    申请日:2000-02-24

    IPC分类号: H01L214763

    摘要: In forming an interconnection having a structure in which an Al interconnection is covered with an interlayer insulating film, for the purpose of preventing voids to be created in the Al interconnection layer, together with suppressing the current leakage owing to the generation of etching residues, a multi-layered structure including a barrier layer (4), an Al interconnection metal layer (5), a Ti layer (2b) and an anti-reflection layer (6) is formed on a semiconductor substrate having an insulating surface, and thereafter layers of said multi-layered structure are patterned, at least, down to the Ti layer (2b) into the shape of structure is heated so as to turn the Ti layer (2b) into an AlTi alloy layer and, then, the steps of growing an interlayer insulating film to bury said patterned interconnection planarizing the interlayer insulating film and carrying out another heat treatment to degas the interlayer insulating film are performed.

    摘要翻译: 在形成具有Al互连被层间绝缘膜覆盖的结构的互连件中,为了防止在Al互连层中产生空隙,同时抑制由于蚀刻残留物的产生导致的电流泄漏, 在具有绝缘表面的半导体衬底上形成包括阻挡层(4),Al互连金属层(5),Ti层(2b)和抗反射层(6)的多层结构, 的所述多层结构的图案化,至少将Ti层(2b)下降至结构形状,以将Ti层(2b)转变成AlTi合金层,然后,生长步骤 进行层间绝缘膜的埋层,使层叠绝缘膜平坦化并进行另一热处理以使层间绝缘膜脱气。

    Process for fabricating a semiconductor device with improved step coverage and reliability of a lower aluminum line
    149.
    发明授权
    Process for fabricating a semiconductor device with improved step coverage and reliability of a lower aluminum line 失效
    制造半导体器件的工艺,其具有改进的下层铝线的台阶覆盖率和可靠性

    公开(公告)号:US06444571B1

    公开(公告)日:2002-09-03

    申请号:US09449236

    申请日:1999-11-24

    申请人: Yoshiaki Yamamoto

    发明人: Yoshiaki Yamamoto

    IPC分类号: H01L214763

    摘要: A lower aluminum line is exposed to a via-hole formed in an inter-level insulating layer, and an outgassing is carried out before deposition for an upper aluminum line connected through the via-hole to the lower aluminum line, wherein the outgassing is carried out at a substrate temperature equal to or less than the maximum substrate temperature in the formation of the inter-level insulating layer so that a hillock and a whisker due to the thermal stress do not take place in the lower aluminum line.

    摘要翻译: 下铝线暴露于形成在层间绝缘层中的通孔,并且在通过通孔连接到下铝线的上铝线的沉积之前进行除气,其中进行除气 在层间绝缘层的形成中等于或小于最大衬底温度的衬底温度下退出,使得由于热应力引起的小丘和晶须不会发生在下铝线中。