公开(公告)号：US12119408B2

公开(公告)日：2024-10-15

申请号：US18243688

申请日：2023-09-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masahiro Watanabe ,  Mitsuo Mashiyama ,  Kenichi Okazaki ,  Motoki Nakashima ,  Hideyuki Kishida

IPC: H01L29/786 ,  H01L21/02 ,  H01L21/8234 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/823412 ,  H01L21/82345 ,  H01L21/823475 ,  H01L27/1225 ,  H01L27/1229 ,  H01L27/1233 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78672

Abstract: The impurity concentration in the oxide semiconductor film is reduced, and a highly reliability can be obtained.

公开(公告)号：US12078902B2

公开(公告)日：2024-09-03

申请号：US18216660

申请日：2023-06-30

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Yukinori Shima ,  Kenichi Okazaki ,  Natsuko Takase

IPC: G02F1/136 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/786 ,  G02F1/1333 ,  G02F1/1345

CPC classification number: G02F1/1368 ,  G02F1/13439 ,  G02F1/136277 ,  G02F1/136286 ,  H01L27/1225 ,  H01L27/1251 ,  H01L29/78648 ,  G02F1/13338 ,  G02F1/133388 ,  G02F1/13454 ,  G02F1/136295 ,  G02F1/13685

Abstract: A liquid crystal display device with a high aperture ratio is provided. A liquid crystal display device with low power consumption is provided.
The display device includes a display portion and a driver circuit portion. The display portion includes a liquid crystal element, a first transistor, a scan line, and a signal line. The driver circuit portion includes a second transistor. The liquid crystal element includes a pixel electrode, a liquid crystal layer, and a common electrode. Each of the scan line and the signal line is electrically connected to the first transistor. The scan line and the signal line each include a metal layer. The structure of the first transistor is different from that of the second transistor. The first transistor is electrically connected to the pixel electrode. The first transistor includes a first region connected to the pixel electrode. The pixel electrode, the common electrode, and the first region have a function of transmitting visible light. Visible light passes through the first region and the liquid crystal element and is emitted to the outside of the display device.

公开(公告)号：US12062724B2

公开(公告)日：2024-08-13

申请号：US18243691

申请日：2023-09-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masahiro Watanabe ,  Mitsuo Mashiyama ,  Kenichi Okazaki ,  Motoki Nakashima ,  Hideyuki Kishida

IPC: H01L29/786 ,  H01L21/02 ,  H01L21/8234 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/823412 ,  H01L21/82345 ,  H01L21/823475 ,  H01L27/1225 ,  H01L27/1229 ,  H01L27/1233 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78672

Abstract: The impurity concentration in the oxide semiconductor film is reduced, and a highly reliability can be obtained.

公开(公告)号：US11959165B2

公开(公告)日：2024-04-16

申请号：US17228847

申请日：2021-04-13

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Tetsunori Maruyama ,  Yuki Imoto ,  Hitomi Sato ,  Masahiro Watanabe ,  Mitsuo Mashiyama ,  Kenichi Okazaki ,  Motoki Nakashima ,  Takashi Shimazu

IPC: C23C14/34 ,  B28B11/24 ,  C04B35/453 ,  C04B35/64 ,  C23C14/08 ,  H01L21/02 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

CPC classification number: C23C14/3414 ,  B28B11/243 ,  C04B35/453 ,  C04B35/64 ,  C23C14/08 ,  C23C14/086 ,  C23C14/345 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/76

Abstract: There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.

公开(公告)号：US11856836B2

公开(公告)日：2023-12-26

申请号：US17479329

申请日：2021-09-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Seiji Yasumoto ,  Kayo Kumakura ,  Yuka Sato ,  Satoru Idojiri ,  Hiroki Adachi ,  Kenichi Okazaki

IPC: H01L27/15 ,  H10K71/00 ,  H10K50/842 ,  H10K71/40 ,  H10K77/10

CPC classification number: H10K71/00 ,  H10K50/8426 ,  H10K71/40 ,  H10K77/111

Abstract: A high-yield fabricating method of a semiconductor device including a peeling step is provided.
A peeling method includes a step of stacking and forming a first material layer and a second material layer over a substrate and a step of separating the first material layer and the second material layer from each other. The second material layer is formed over the substrate with the first material layer therebetween. The first material layer includes a first compound layer in contact with the second material layer and a second compound layer positioned closer to the substrate side than the first compound layer is. The first compound layer has the highest oxygen content among the layers included in the first material layer. The second compound layer has the highest nitrogen content among the layers included in the first material layer. The second material layer includes a resin. In the step of separating, the first material layer and the second material layer are separated from each other by irradiation of an interface between the first material layer and the second material layer or the vicinity of the interface with light.

公开(公告)号：US11552111B2

公开(公告)日：2023-01-10

申请号：US17043232

申请日：2019-04-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kenichi Okazaki ,  Masami Jintyou ,  Yukinori Shima

IPC: H01L27/00 ,  H01L29/00 ,  H01L27/12 ,  H01L21/426

Abstract: A semiconductor device having favorable and stable electrical characteristics is provided. The semiconductor device includes a first and a second transistor over an insulating surface. The first and the second transistors each include a first insulating layer, a semiconductor layer over the first insulating layer, a second insulating layer over the semiconductor layer, and a first conductive layer overlapping with the semiconductor layer with the second insulating layer interposed therebetween. The first insulating layer includes a convex first region that overlaps with the semiconductor layer and a second region that does not and is thinner than the first region. The first conductive layer includes a part over the second region where a lower surface of the first conductive layer is positioned below a lower surface of the semiconductor layer. The second transistor further includes a third conductive layer overlapping with the semiconductor layer with the first insulating layer interposed therebetween.

公开(公告)号：US11489076B2

公开(公告)日：2022-11-01

申请号：US16918472

申请日：2020-07-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Kenichi Okazaki ,  Yukinori Shima ,  Shinpei Matsuda ,  Haruyuki Baba ,  Ryunosuke Honda

IPC: H01L29/786 ,  H01L29/778 ,  H01L27/12 ,  H01L29/66 ,  H01L29/24

Abstract: To improve field-effect mobility and reliability in a transistor including an oxide semiconductor film. A semiconductor device includes a transistor including an oxide semiconductor film. The transistor includes a region where the maximum value of field-effect mobility of the transistor at a gate voltage of higher than 0 V and lower than or equal to 10 V is larger than or equal to 40 and smaller than 150; a region where the threshold voltage is higher than or equal to minus 1 V and lower than or equal to 1 V; and a region where the S value is smaller than 0.3 V/decade.

公开(公告)号：US11456320B2

公开(公告)日：2022-09-27

申请号：US16999237

申请日：2020-08-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kenichi Okazaki ,  Daisuke Kurosaki ,  Yasutaka Nakazawa ,  Kazunori Watanabe ,  Koji Kusunoki

IPC: G02F1/1368 ,  H01L27/12 ,  G06F3/041 ,  G06F3/044 ,  H01L29/786

Abstract: A display device includes a liquid crystal element, a transistor, a scan line, and a signal line. The liquid crystal element includes a pixel electrode, a liquid crystal layer, and a common electrode. The scan line and the signal line are each electrically connected to the transistor. The scan line and the signal line each include a metal layer. The transistor is electrically connected to the pixel electrode. A semiconductor layer of the transistor includes a stack of a first metal oxide layer and a second metal oxide layer. The first metal oxide layer includes a region with lower crystallinity than the second metal oxide layer. The transistor includes a first region connected to the pixel electrode. The pixel electrode, the common electrode, and the first region are each configured to transmit visible light. Visible light passes through the first region and the liquid crystal element and exits from the display device.

公开(公告)号：US11424334B2

公开(公告)日：2022-08-23

申请号：US16758091

申请日：2018-10-23

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Masami Jintyou ,  Takahiro Iguchi ,  Yukinori Shima ,  Kenichi Okazaki

IPC: H01L27/00 ,  H01L29/00 ,  G02F1/1368 ,  H01L29/423 ,  H01L27/12 ,  H01L29/51

Abstract: A semiconductor device with favorable electrical characteristics is provided. A semiconductor device with stable electrical characteristics is provided.
The semiconductor device includes a first insulating layer, a second insulating layer, a third insulating layer, a fourth insulating layer, a semiconductor layer, and a first conductive layer. The second insulating layer is positioned over the first insulating layer and the island-shaped semiconductor layer is positioned over the second insulating layer. The second insulating layer has an island shape having an end portion outside a region overlapping with the semiconductor layer. The fourth insulating layer covers the second insulating layer, the semiconductor layer, the third insulating layer, and the first conductive layer, is in contact with part of a top surface of the semiconductor layer, and is in contact with the first insulating layer outside the end portion of the second insulating layer. The semiconductor layer contains a metal oxide, the second insulating layer and the third insulating layer contain an oxide, the first insulating layer contains a metal oxide or a nitride, and the fourth insulating layer contains a metal nitride.

公开(公告)号：US11380802B2

公开(公告)日：2022-07-05

申请号：US17160435

申请日：2021-01-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Yukinori Shima ,  Suzunosuke Hiraishi ,  Kenichi Okazaki

IPC: H01L27/15 ,  H01L29/786 ,  H01L29/423 ,  H01L27/12 ,  H01L29/66

Abstract: To reduce defects in an oxide semiconductor film in a semiconductor device. To improve electrical characteristics of and reliability in the semiconductor device including an oxide semiconductor film. A method for manufacturing a semiconductor device includes the steps of forming a gate electrode and a gate insulating film over a substrate, forming an oxide semiconductor film over the gate insulating film, forming a pair of electrodes over the oxide semiconductor film, forming a first oxide insulating film over the oxide semiconductor film and the pair of electrodes by a plasma CVD method in which a film formation temperature is 280° C. or higher and 400° C. or lower, forming a second oxide insulating film over the first oxide insulating film, and performing heat treatment at a temperature of 150° C. to 400° C. inclusive, preferably 300° C. to 400° C. inclusive, further preferably 320° C. to 370° C. inclusive.