中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

214 records (took 0.034 seconds)

    Cleaning composition and methods thereof
    141.
    发明授权
    Cleaning composition and methods thereof 有权
    清洗组合物及其方法

    公开(公告)号：US09570285B2

    公开(公告)日：2017-02-14

    申请号：US14690024

    申请日：2015-04-17

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Chen-Yu Liu ,  Ching-Yu Chang

    IPC: H01L21/311 ,  H01L21/02 ,  H01L21/033

    CPC classification number: H01L21/0206 ,  G03F7/0752 ,  G03F7/425 ,  H01L21/02123 ,  H01L21/02282 ,  H01L21/0332 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/67051

    Abstract: Provided is a cleaning solution and its applications. The cleaning solution comprises a mixture of a basic chemical compound and a solvent solution. In some embodiments, the basic chemical compound is tetramethylammonium hydroxide (TMAH) and the solvent solution includes a solution of water and at least one of propylene glycol ethyl ether (PGEE), propylene glycol monomethylether (PGME), and propylene glycol monomethylether acetate (PGMEA). The cleaning solution is effective in removing silicon-containing material off a surface of a system or a surface of a semiconductor substrate. In some embodiments, the system comprises a pipeline for delivering the silicon-containing material in semiconductor spin-coating processes. In some embodiments, the system comprises a drain for collecting waste fluid in semiconductor spin-coating processes. In some embodiments, the silicon-containing material has a first pH value, the cleaning solution has a second pH value, and the silicon-containing material is unstable at the second pH value.

    Abstract translation: 提供清洗液及其应用。 清洁溶液包含碱性化合物和溶剂溶液的混合物。 在一些实施方案中，碱性化合物是四甲基氢氧化铵（TMAH），溶剂溶液包括水和丙二醇乙醚（PGEE），丙二醇单甲基醚（PGME）和丙二醇单甲醚乙酸酯（PGMEA）中的至少一种的溶液 ）。 清洁溶液有效地从系统的表面或半导体衬底的表面上除去含硅材料。 在一些实施例中，该系统包括用于在半导体旋涂工艺中输送含硅材料的管线。 在一些实施例中，该系统包括用于在半导体旋涂工艺中收集废流体的排水口。 在一些实施方案中，含硅材料具有第一pH值，清洗溶液具有第二pH值，并且含硅材料在第二pH值下是不稳定的。

    Reducing defects in patterning processes
    142.
    发明授权
    Reducing defects in patterning processes 有权
    减少图案化过程中的缺陷

    公开(公告)号：US09543160B2

    公开(公告)日：2017-01-10

    申请号：US14830087

    申请日：2015-08-19

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Ching-Yu Chang

    IPC: H01L21/311 ,  H01L21/308 ,  H01L21/3213 ,  H01L21/027 ,  H01L21/02 ,  H01L21/033

    CPC classification number: H01L21/3086 ,  H01L21/02271 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3088 ,  H01L21/31144 ,  H01L21/32139

    Abstract: A method includes forming a mask layer forming a first photo resist over the mask layer, performing a first patterning step on the first photo resist, and performing a first etching step on the mask layer using the first photo resist as an etching mask. The first photo resist is then removed. The method further includes forming a particle-fixing layer on a top surface and sidewalls of the mask layer, forming a second photo resist over the particle-fixing layer and the mask layer, performing a second patterning step on the second photo resist, and performing a second etching step on the particle-fixing layer and the mask layer using the second photo resist as an etching mask. The particle-fixing layer is etched through. A target layer underlying the mask layer is etched using the mask layer as an etching mask.

    Abstract translation: 一种方法包括在掩模层上形成形成第一光致抗蚀剂的掩模层，在第一光致抗蚀剂上进行第一图案化步骤，并使用第一光致抗蚀剂作为蚀刻掩模在掩模层上进行第一蚀刻步骤。 然后取出第一张光刻胶。 该方法还包括在掩模层的顶表面和侧壁上形成颗粒固定层，在颗粒固定层和掩模层上形成第二光致抗蚀剂，在第二光致抗蚀剂上进行第二图案化步骤，并执行 使用第二光致抗蚀剂作为蚀刻掩模在粒子固定层和掩模层上的第二蚀刻步骤。 颗粒固定层被蚀刻。 使用掩模层作为蚀刻掩模蚀刻掩模层下面的目标层。

    Patterned Photoresist Removal
    143.
    发明申请
    Patterned Photoresist Removal 有权
    图案光刻胶去除

    公开(公告)号：US20160342092A1

    公开(公告)日：2016-11-24

    申请号：US14714887

    申请日：2015-05-18

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Ya-Ling Cheng ,  Ching-Yu Chang ,  Chien-Chih Chen

    IPC: G03F7/42 ,  G03F7/34 ,  G03F7/32 ,  G03F7/20 ,  G03F7/38

    CPC classification number: G03F7/422 ,  G03F7/038 ,  G03F7/38 ,  G03F7/40

    Abstract: Methods for performing a photolithographic process are disclosed. The methods facilitate the removal of photosensitive from a wafer after the photosensitive has been used as an etch mask. The photosensitive may be a negative tone photosensitive that undergoes a cross-linking process on exposure to electromagnetic energy. By limiting the cross-linking through a reduced post-exposure bake temperature and/or through reduced cross-linker loading, the photoresist, or at least a portion thereof, may have a reduced solvent strip resistance. Because of the reduced solvent strip resistance, a portion of the photosensitive may be removed using a solvent strip. After the solvent strip, a dry etch may be performed to remove remaining portions of the photoresist.

    Abstract translation: 公开了进行光刻工艺的方法。 在光敏剂用作蚀刻掩模之后，这些方法有助于从晶片去除感光体。 光敏可以是在暴露于电磁能量时经历交联过程的负色调感光体。 通过减少曝光后烘烤温度和/或通过减少的交联剂负载限制交联，光致抗蚀剂或其至少一部分可具有降低的耐溶剂耐剥离性。 由于耐溶剂剥离性能降低，可以使用溶剂条除去一部分感光胶。 在溶剂条之后，可以进行干蚀刻以去除光致抗蚀剂的剩余部分。

    CLEANING COMPOSITION AND METHODS THEREOF
    145.
    发明申请
    CLEANING COMPOSITION AND METHODS THEREOF 有权
    清洁组合物及其方法

    公开(公告)号：US20160307746A1

    公开(公告)日：2016-10-20

    申请号：US14690024

    申请日：2015-04-17

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Chen-Yu Liu ,  Ching-Yu Chang

    IPC: H01L21/02 ,  H01L21/033 ,  H01L21/311

    CPC classification number: H01L21/0206 ,  G03F7/0752 ,  G03F7/425 ,  H01L21/02123 ,  H01L21/02282 ,  H01L21/0332 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/67051

    Abstract: Provided is a cleaning solution and its applications. The cleaning solution comprises a mixture of a basic chemical compound and a solvent solution. In some embodiments, the basic chemical compound is tetramethylammonium hydroxide (TMAH) and the solvent solution includes a solution of water and at least one of propylene glycol ethyl ether (PGEE), propylene glycol monomethylether (PGME), and propylene glycol monomethylether acetate (PGMEA). The cleaning solution is effective in removing silicon-containing material off a surface of a system or a surface of a semiconductor substrate. In some embodiments, the system comprises a pipeline for delivering the silicon-containing material in semiconductor spin-coating processes. In some embodiments, the system comprises a drain for collecting waste fluid in semiconductor spin-coating processes. In some embodiments, the silicon-containing material has a first pH value, the cleaning solution has a second pH value, and the silicon-containing material is unstable at the second pH value.

    Abstract translation: 提供清洗液及其应用。 清洁溶液包含碱性化合物和溶剂溶液的混合物。 在一些实施方案中，碱性化合物是四甲基氢氧化铵（TMAH），溶剂溶液包括水和丙二醇乙醚（PGEE），丙二醇单甲基醚（PGME）和丙二醇单甲醚乙酸酯（PGMEA）中的至少一种的溶液 ）。 清洁溶液有效地从系统的表面或半导体衬底的表面上除去含硅材料。 在一些实施例中，该系统包括用于在半导体旋涂工艺中输送含硅材料的管线。 在一些实施例中，该系统包括用于在半导体旋涂工艺中收集废流体的排水口。 在一些实施方案中，含硅材料具有第一pH值，清洗溶液具有第二pH值，并且含硅材料在第二pH值下是不稳定的。

    SILICON-BASED MIDDLE LAYER COMPOSITION
    146.
    发明申请
    SILICON-BASED MIDDLE LAYER COMPOSITION 有权
    基于硅的中层组合物

    公开(公告)号：US20160284537A1

    公开(公告)日：2016-09-29

    申请号：US14671696

    申请日：2015-03-27

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Chen-Yu Liu ,  Ching-Yu Chang

    IPC: H01L21/027

    CPC classification number: H01L21/0332 ,  G03F7/0751 ,  G03F7/0752 ,  H01L21/02126 ,  H01L21/0271

    Abstract: A method of making a semiconductor device is provided. The method includes forming a first material layer that includes a silicon-based component having an alkyl group on a substrate, forming a photoresist layer directly on the material layer, and exposing the photoresist layer to a radiation source.

    Abstract translation: 提供制造半导体器件的方法。 该方法包括形成第一材料层，其包括在基底上具有烷基的硅基组分，在材料层上直接形成光致抗蚀剂层，并将光刻胶层暴露于辐射源。

    PHOTORESIST HAVING DECREASED OUTGASSING
    149.
    发明申请
    PHOTORESIST HAVING DECREASED OUTGASSING 有权
    具有减少噪音的摄影师

    公开(公告)号：US20160108170A1

    公开(公告)日：2016-04-21

    申请号：US14516681

    申请日：2014-10-17

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

    Inventor： Wei-Han Lai ,  Ching-Yu Chang

    IPC: C08G63/00 ,  G03F7/30

    CPC classification number: G03F7/0382 ,  G03F7/0392 ,  G03F7/30 ,  G03F7/325

    Abstract: Provided is a method of fabricating a semiconductor device. A substrate is provided. A material layer is formed over the substrate. A photoresist layer is formed over the material layer. The photoresist layer contains a polymer. The polymer includes an acid labile group (ALG) that is linked to a plurality of carboxylic acid function groups. The photoresist layer is then patterned using a lithography process, for example an extreme ultraviolet (EUV) lithography process.

    Abstract translation: 提供一种制造半导体器件的方法。 提供基板。 材料层形成在衬底上。 在材料层上形成光致抗蚀剂层。 光致抗蚀剂层含有聚合物。 聚合物包括与多个羧酸官能团连接的酸不稳定基团（ALG）。 然后使用光刻工艺，例如极紫外（EUV）光刻工艺对光致抗蚀剂层进行构图。

Patent Agency Ranking