公开(公告)号：US07793815B2

公开(公告)日：2010-09-14

申请号：US11340407

申请日：2006-01-26

申请人： Akira Shimizu ,  Hidenobu Matsuyama

发明人： Akira Shimizu ,  Hidenobu Matsuyama

IPC分类号： B23K1/06

CPC分类号： B29C66/81433 ,  B23K20/10 ,  B29C65/081 ,  B29C66/1122 ,  B29C66/21 ,  B29C66/43 ,  B29C66/81435 ,  B29C66/8167 ,  B29C66/8322 ,  B29L2031/3468

摘要： The disclosure is directed to ultrasonic bonding equipment, in which the anvil and horn include protrusions of varying height to grip the material being bonded. The outer protrusions may form smaller or differently shaped indentations in the material to reduce material stresses of the material at the outer region of the material. An exemplary embodiment of an ultrasonic bonding system includes an anvil and a horn arranged facing the anvil to ultrasonically bond a gripped portion of two or more layers of material. The gripped portion of the layers includes an inner region and an outer region. The anvil and the horn apply a gripping force to the outer region that is less than a gripping force applied to the inner region of the gripped materials.

摘要翻译： 本发明涉及超声波接合设备，其中砧座和喇叭包括不同高度的突起，以夹持被接合的材料。 外部突起可以在材料中形成更小或不同形状的凹陷，以减少材料外部材料的材料应力。 超声波接合系统的示例性实施例包括砧座和面向砧座的喇叭，以超声地结合两层或更多层材料的夹持部分。 层的夹持部分包括内部区域和外部区域。 砧座和喇叭对外部区域施加夹紧力，该夹紧力小于施加到被夹紧材料的内部区域的夹持力。

公开(公告)号：US07565880B2

公开(公告)日：2009-07-28

申请号：US11700895

申请日：2007-02-01

申请人： Akira Shimizu ,  Yuhsuke Fukuoka ,  Yasushi Fujioka ,  Katsushi Kishimoto ,  Katsuhiko Nomoto

发明人： Akira Shimizu ,  Yuhsuke Fukuoka ,  Yasushi Fujioka ,  Katsushi Kishimoto ,  Katsuhiko Nomoto

IPC分类号： C23C16/00

CPC分类号： H01J37/32532 ,  C23C16/4583 ,  C23C16/5096

摘要： A plasma CVD apparatus comprises an anode electrode and a cathode electrode, and is for forming a thin film on a substrate by performing plasma discharge between the anode electrode and the cathode electrode, comprising: a substrate holder disposed between the anode electrode and the cathode electrode; and one conductive member disposed between the substrate holder and one electrode of either the anode electrode or the cathode electrode, wherein the substrate holder supports the substrate, the one conductive member is provided between the one electrode and the substrate holder so as to substantially cover an entire space between the one electrode and the substrate holder, and the one conductive member is electrically connected to the one electrode and the substrate holder.

摘要翻译： 等离子体CVD装置包括阳极电极和阴极电极，用于通过在阳极电极和阴极电极之间执行等离子体放电来在衬底上形成薄膜，其包括：设置在阳极电极和阴极之间的衬底保持器 ; 以及设置在所述基板保持件和所述阳极电极或所述阴极电极的一个电极之间的一个导电部件，其中，所述基板保持器支撑所述基板，所述一个导电部件设置在所述一个电极和所述基板保持件之间， 一个电极和衬底保持器之间的整个空间，并且一个导电构件电连接到一个电极和衬底保持器。

公开(公告)号：US20090096107A1

公开(公告)日：2009-04-16

申请号：US11917186

申请日：2006-06-13

申请人： Mitsuru Okazaki ,  Youichi Kajiwara ,  Naoki Takahashi ,  Akira Shimizu

发明人： Mitsuru Okazaki ,  Youichi Kajiwara ,  Naoki Takahashi ,  Akira Shimizu

IPC分类号： H01L23/48 ,  H01L23/52

CPC分类号： H01L23/3171 ,  H01L23/562 ,  H01L27/0203 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a semiconductor integrated circuit device, an element forming region and a metal wiring layer are covered with a passivation layer on a semiconductor substrate which is cut out in a rectangular shape. At four corners of the device, the passivation layer is provided with corner non-wiring regions formed directly on the semiconductor substrate. Thus, crack generation on the passivation layer due to heat stress can be suppressed.

摘要翻译： 在半导体集成电路器件中，元件形成区域和金属布线层在被切割成矩形的半导体衬底上被钝化层覆盖。 在器件的四个角处，钝化层设置有直接形成在半导体衬底上的拐角非布线区域。 因此，可以抑制由于热应力引起的钝化层上的裂纹产生。

公开(公告)号：US20090056490A1

公开(公告)日：2009-03-05

申请号：US12230300

申请日：2008-08-27

申请人： Akira Shimizu

发明人： Akira Shimizu

IPC分类号： G05G1/00

CPC分类号： F16H59/02 ,  F16H2059/0273 ,  F16H2059/0291 ,  Y10T74/20 ,  Y10T74/20018 ,  Y10T74/2014 ,  Y10T74/20159

摘要： A shift lever assembly includes a shift lever swingably with a rotational axis as a swing support point, an axis supporting bracket for supporting the rotational axis, two axis supporting elements for supporting both ends of the rotational axis together with the axis supporting bracket. In addition, two beams are provided with each of the axis supporting elements. The beams will break off in case where an impact load is to be applied via the shift lever. Furthermore, a metal plate is provided with the axis supporting bracket for each of the axis supporting elements. The metal plate will be bent by the each of the axis supporting elements moving after break-offs of the beams. According to the shift lever assembly, stroke displacement for energy absorbing can be made relatively long. In addition, relatively large impact energy can be absorbed with short stroke displacement.

摘要翻译： 变速杆组件包括可旋转地以可旋转轴线作为摆动支撑点可移动的变速杆，用于支撑旋转轴线的轴支撑支架，用于支撑旋转轴线的两端与轴支撑支架的两个轴支撑元件。 此外，两个梁设置有每个轴支撑元件。 在通过变速杆施加冲击载荷的情况下，梁将断裂。 此外，金属板设置有用于每个轴支撑元件的轴支撑托架。 金属板将被梁的断裂后移动的每个轴支撑元件弯曲。 根据变速杆组件，可以使能量吸收的行程位移相对较长。 此外，可以用短行程位移吸收相对较大的冲击能量。

公开(公告)号：US07464188B2

公开(公告)日：2008-12-09

申请号：US10759204

申请日：2004-01-20

申请人： Akira Shimizu ,  Shinji Fujiwara

发明人： Akira Shimizu ,  Shinji Fujiwara

IPC分类号： G06F3/00 ,  G06F12/02 ,  G06F21/00 ,  G06F9/26 ,  G06F9/34

CPC分类号： G06F21/78 ,  G06F21/6245

摘要： Since no control of accesses made by a computer as accesses to a storage apparatus is executed, the computer can be used illegally to steal and improperly change data stored in the storage apparatus. Thus, an access-control mechanism external to the computer is constructed to solve this problem. That is to say, the control of accesses is executed in the storage apparatus and a network apparatus for each program executed by the computer. In order to enhance the implementability of such control of accesses, the control is executed without extending a variety of protocols of communications among the computer, the network apparatus and the storage apparatus. By implementing the control of accesses in this way, a program other than programs specified in advance is not capable of making an access to data stored in the storage apparatus. Thus, even if the computer is used illegally, data stored in the storage apparatus can be prevented from being stolen and changed improperly.

摘要翻译： 由于不执行对计算机进行对存储装置的访问的访问控制，因此可以非法地使用计算机来窃取和不正确地改变存储在存储装置中的数据。 因此，构造了计算机外部的访问控制机构来解决这个问题。 也就是说，在由计算机执行的每个程序的存储装置和网络装置中执行访问的控制。 为了提高这种访问控制的可实现性，在不扩展计算机，网络装置和存储装置之间的各种通信协议的情况下执行控制。 通过以这种方式实现访问控制，预先指定的程序之外的程序不能访问存储在存储装置中的数据。 因此，即使计算机被非法使用，也可以防止存储在存储装置中的数据被盗窃和不正确地改变。

公开(公告)号：US07408225B2

公开(公告)日：2008-08-05

申请号：US10960600

申请日：2004-10-07

申请人： Hiroshi Shinriki ,  Baiei Kawano ,  Akira Shimizu

发明人： Hiroshi Shinriki ,  Baiei Kawano ,  Akira Shimizu

IPC分类号： H01L23/62

CPC分类号： C23C16/34 ,  C23C16/4412 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45565 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834

摘要： A thin-film formation apparatus possesses a reaction chamber to be evacuated, a placing portion on which a substrate is placed inside the reaction chamber, a gas-dispersion guide installed over the placing portion for supplying a gas onto a substrate surface, a gas-supply port for introducing the gas into the gas-dispersion guide, a gas-dispersion plate disposed on the side of the substrate of the gas-dispersion guide and having multiple gas-discharge pores, a first exhaust port for exhausting, downstream of the gas-dispersion plate, the gas supplied onto the substrate surface from the gas-dispersion plate, and a second exhaust port for exhausting, upstream of the gas-dispersion plate, a gas inside the gas-dispersion guide via a space between the gas-dispersion guide and the gas-dispersion plate.

摘要翻译： 薄膜形成装置具有要抽真空的反应室，在反应室内放置基板的放置部分，安置在用于将气体供应到基板表面上的放置部分上的气体分散导向器， 用于将气体引入气体分散引导件的供给口，设置在气体分散引导件的基板侧并具有多个气体排出孔的气体分散板，用于排出气体的下游的第一排出口 分散板，从气体分散板供给到基板表面上的气体和用于在气体分散板上游排气的第二排气口，气体分散板内的气体经由气体分散板 导轨和气体分散板。

公开(公告)号：US20080110399A1

公开(公告)日：2008-05-15

申请号：US11936630

申请日：2007-11-07

申请人： Hyung-Sang Park ,  Dae Youn Kim ,  Akira Shimizu

发明人： Hyung-Sang Park ,  Dae Youn Kim ,  Akira Shimizu

IPC分类号： C23C16/00

CPC分类号： C23C16/45544 ,  C23C16/45504 ,  C23C16/45574 ,  C23C16/45587

摘要： A reactor configured to subject a substrate to alternately repeated surface reactions of vapor-phase reactants is disclosed. The reactor includes a reaction chamber, one or more inlets, and an exhaust outlet. The reaction chamber includes a reaction space. The reactor also includes a gas flow control guide structure within the reaction chamber. The gas flow control guide structure resides over the reaction space and is interposed between the inlets and the reaction space such that a laminar flow is generated in the reaction space. The gas flow control guide structure includes one or more channels. Each of the channels extends from a respective one of the inlets to a first portion of a periphery of the reaction space. Each of the channels defines a flow path extending from the respective one of the inlets to the reaction space. The gas flow control guide structure further includes a passage or shortcut formed through the gas flow control guide structure to provide a minority flow directly over the reaction space to merge with the laminar flow. This configuration allows films deposited on a substrate to have a uniform thickness, even in cases where reactants that are unstable at a deposition temperature is used.

摘要翻译： 公开了一种被配置成使基板交替重复表面反应的反应器的反应器。 反应器包括反应室，一个或多个入口和排气出口。 反应室包括反应空间。 反应器还包括反应室内的气体流量控制引导结构。 气体流量控制引导结构位于反应空间之上，并且介于入口和反应空间之间，从而在反应空间中产生层流。 气体流量控制引导结构包括一个或多个通道。 每个通道从入口中的相应一个延伸到反应空间的周边的第一部分。 每个通道限定从入口中的相应一个延伸到反应空间的流动路径。 气体流量控制引导结构还包括通过气流控制引导结构形成的通道或捷径，以在反应空间上直接提供少数流体以与层流合并。 即使在使用在沉积温度不稳定的反应物的情况下，也可以使沉积在基板上的膜具有均匀的厚度。

公开(公告)号：US07304836B2

公开(公告)日：2007-12-04

申请号：US10791558

申请日：2004-03-03

申请人： Yasuharu Nakamura ,  Takahiro Sasaki ,  Akira Shimizu

发明人： Yasuharu Nakamura ,  Takahiro Sasaki ,  Akira Shimizu

IPC分类号： G06F1/16

CPC分类号： B60R11/02 ,  B60R11/0235

摘要： As an electronic apparatus in which a drive power source for generating a drive force to move a movable portion moving freely can be miniaturized, an multi-function electronic apparatus 1 has a main body 2, an operation and display unit 3 as a movable portion, a drive mechanism 4, the first and second pushing units, a guide groove 19 and a slide groove 21. The drive mechanism 4 has a movable arm 15 as a movable portion. The first and second pushing units push the operation and display unit 3 and the movable arm 15. The guide groove 19 and the slide groove 21 change the pushing forces of the first and second pushing units between the first position and the second position.

摘要翻译： 作为用于产生用于使可移动部分移动自由移动的驱动力的驱动电源的电子设备可以小型化，多功能电子设备1具有作为可移动部分的主体2，操作和显示单元3， 驱动机构4，第一和第二推动单元，引导槽19和滑动槽21。 驱动机构4具有作为可动部的可动臂15。 第一和第二按压单元推动操作和显示单元3和可动臂15。 引导槽19和滑动槽21改变第一和第二推动单元在第一位置和第二位置之间的推力。

公开(公告)号：US07298006B2

公开(公告)日：2007-11-20

申请号：US11535514

申请日：2006-09-27

申请人： Fumitaka Arai ,  Yasuhiko Matsunaga ,  Makoto Sakuma ,  Riichiro Shirota ,  Akira Shimizu

发明人： Fumitaka Arai ,  Yasuhiko Matsunaga ,  Makoto Sakuma ,  Riichiro Shirota ,  Akira Shimizu

IPC分类号： H01L29/788

CPC分类号： H01L27/115 ,  G11C16/0483 ,  G11C16/10 ,  H01L21/28273 ,  H01L27/11521 ,  H01L29/42324 ,  H01L29/42336 ,  H01L29/7883

摘要： A floating gate is formed on a semiconductor substrate via a gate insulating film. Diffused layers are formed as sources or drain regions on opposite sides of the floating gate in the semiconductor substrate. First and second control gates are formed opposite to both of the diffused layers on the opposite sides of the floating gate via an inter-gate insulating film to drive the floating gate.

摘要翻译： 通过栅极绝缘膜在半导体衬底上形成浮栅。 扩散层在半导体衬底中的浮置栅极的相对侧上形成为源区或漏极区。 第一和第二控制栅极通过栅极间绝缘膜与浮动栅极的相对侧上的两个扩散层相对形成，以驱动浮置栅极。

公开(公告)号：US07262447B2

公开(公告)日：2007-08-28

申请号：US10780699

申请日：2004-02-19

申请人： Takaaki Negoro ,  Akira Shimizu

发明人： Takaaki Negoro ,  Akira Shimizu

IPC分类号： H01L29/80 ,  H01L31/112

CPC分类号： H01L29/4983 ,  H01L21/82345 ,  H01L21/823462 ,  H01L21/823842 ,  H01L27/088 ,  H01L27/092 ,  H01L29/1045 ,  H01L29/42368 ,  H03K3/0315

摘要： A semiconductor apparatus includes a MOS transistor having a semiconductor substrate providing as a channel region between a source and a drain. A gate electrode is formed on the semiconductor substrate via a gate oxide film. A threshold voltage of the source side region of the MOS transistor is higher than that of the drain side region in a longitudinal direction of the channel region so that a saturation drain current can be constant and a λ performance can be improved while suppressing channel width and length.

摘要翻译： 半导体装置包括MOS晶体管，其具有提供源极和漏极之间的沟道区域的半导体衬底。 栅电极通过栅极氧化膜形成在半导体衬底上。 MOS晶体管的源侧区域的阈值电压高于沟道区域的纵向方向上的漏极侧区域的阈值电压，使得饱和漏极电流可以是恒定的，并且可以在抑制沟道宽度的同时提高λ性能， 长度。